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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH8R80ANH,L1Q

Name: TPH8R80ANH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH8R80ANH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH8R80ANH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH8R80ANH,L1Q.pdf

Description:: MOSFET N CH 100V 32A 8-SOP

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Product details

Overview

TPH8R80ANH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed as a high-efficiency switching element for DC-DC converters and motor drivers. It delivers R_DS(ON) = 7.4 mΩ (typ.) at V_GS = 10 V, Q_SW = 13 nC (typ.), and supports continuous drain current up to 59 A (T_c = 25 °C), enabling compact, high-frequency power stages.

For engineers reviewing the TPH8R80ANH,L1Q datasheet, TPH8R80ANH,L1Q pinout, TPH8R80ANH,L1Q application, or TPH8R80ANH,L1Q equivalent, key selection criteria include its 100 V V_DSS, low thermal resistance (R_th(ch-c) = 2.04 °C/W), SOP Advance package footprint, and verified performance in synchronous buck topologies with gate drive voltages ≥10 V.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to optimize conduction and switching losses simultaneously. Its enhancement-mode operation (V_th = 2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while low C_iss (2180 pF typ.) and C_rss (21 pF typ.) support fast, low-noise switching at frequencies up to several hundred kHz.

The device integrates a robust body diode with V_DSF = −1.2 V (typ.) at I_DR = 32 A and supports single-pulse avalanche energy of 79 mJ, making it suitable for inductive load switching where voltage transients occur. Thermal design is anchored by channel-to-case resistance of 2.04 °C/W and defined SOA limits per Figure 8.14.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage for use in 48 V bus and 100 V-class industrial power supplies.
R_DS(ON)	7.4 mΩ (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 32 A, critical for high-current synchronous rectification.
Q_SW	13 nC (typ.) - Low total switching charge reduces driver power and EMI in hard-switched converters.
I_D (DC)	59 A (T_c = 25 °C) - Supports high-current output stages without parallel devices in thermally managed PCB layouts.
C_iss	2180 pF (typ.) at V_DS = 50 V - Predictable input capacitance for stable gate drive loop design and Miller effect control.
R_th(ch-c)	2.04 °C/W - Allows direct heatsinking via exposed drain pad; enables >50 W dissipation with modest thermal interface.

Pinout & Package

TPH8R80ANH,L1Q uses the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), featuring an exposed drain pad for enhanced thermal performance and compact 5.0 × 6.0 mm footprint. The package weighs 0.069 g (typ.) and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally tied to substrate; requires low-inductance connection to ground plane.
4	Gate	Control terminal; driven by external gate driver; sensitive to ESD (±20 V max rating).
5, 6, 7, 8	Drain	High-side switching node; connected to exposed metal pad for thermal and electrical conduction to heatsink/PCB copper.

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Reduces R_DS(ON) × Q_g figure-of-merit by ~25% vs. prior U-MOS generations, improving efficiency in high-frequency SMPS.
Low Q_gd/Q_g ratio	Q_gd = 7.8 nC / Q_g = 33 nC → 23.6% - Minimizes Miller plateau duration, enabling faster, more controllable turn-off.
Enhancement-mode threshold	V_th = 2.0–4.0 V - Ensures full depletion at 0 V gate bias and clean turn-on with 3.3 V or 5 V logic-compatible drivers.
Low IDSS leakage	10 µA max at V_DS = 100 V - Maintains system standby power integrity in always-on applications like PoE injectors.

Applications

DC-DC Converters	Switching Voltage Regulators
Use Scenario: High-efficiency 12 V to 1 V synchronous buck converter in server VRMs. IC Role / Device Role / Timing Role: High-side power switch handling 50+ A peak current with <100 ns switching transitions. Use Value: 7.4 mΩ R_DS(ON) and 13 nC Q_SW reduce combined conduction + switching losses below 2.5 W at 300 kHz, enabling single-phase designs.	Use Scenario: Industrial 24 V input step-down regulator powering PLC I/O modules. IC Role / Device Role / Timing Role: Main switching transistor in fixed-frequency PWM controller-based supply with overcurrent protection. Use Value: 100 V V_DSS provides 2× safety margin over 24 V rail; 139 A pulsed rating handles inrush and short-circuit events.
Motor Drivers	Power ORing Circuits
Use Scenario: H-bridge driver for 24 V BLDC fan in telecom equipment. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–50 kHz. Use Value: Fast tr = 7.0 ns and tf = 12 ns enable precise PWM timing; low R_DS(ON) minimizes heat generation during continuous 15 A operation.	Use Scenario: Redundant 48 V DC power supply ORing in datacom shelf systems. IC Role / Device Role / Timing Role: Active ORing FET replacing Schottky diodes to eliminate forward voltage drop. Use Value: Body diode V_DSF = −1.2 V allows reverse conduction during fault transition; low R_DS(ON) cuts power loss by >70% vs. discrete diode solution.

DC-DC Converters

Switching Voltage Regulators

Use Scenario: High-efficiency 12 V to 1 V synchronous buck converter in server VRMs.

IC Role / Device Role / Timing Role: High-side power switch handling 50+ A peak current with <100 ns switching transitions.

Use Value: 7.4 mΩ R_DS(ON) and 13 nC Q_SW reduce combined conduction + switching losses below 2.5 W at 300 kHz, enabling single-phase designs.

Use Scenario: Industrial 24 V input step-down regulator powering PLC I/O modules.

IC Role / Device Role / Timing Role: Main switching transistor in fixed-frequency PWM controller-based supply with overcurrent protection.

Use Value: 100 V V_DSS provides 2× safety margin over 24 V rail; 139 A pulsed rating handles inrush and short-circuit events.

Motor Drivers

Power ORing Circuits

Use Scenario: H-bridge driver for 24 V BLDC fan in telecom equipment.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–50 kHz.

Use Value: Fast tr = 7.0 ns and tf = 12 ns enable precise PWM timing; low R_DS(ON) minimizes heat generation during continuous 15 A operation.

Use Scenario: Redundant 48 V DC power supply ORing in datacom shelf systems.

IC Role / Device Role / Timing Role: Active ORing FET replacing Schottky diodes to eliminate forward voltage drop.

Use Value: Body diode V_DSF = −1.2 V allows reverse conduction during fault transition; low R_DS(ON) cuts power loss by >70% vs. discrete diode solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP80N10T	TO-220 package; higher R_DS(ON) = 10.5 mΩ; Q_g = 42 nC; no integrated body diode spec.	Requires mechanical heatsink; unsuitable for space-constrained SMT designs; less optimized for high-frequency switching.	Select when board-level thermal management favors through-hole mounting and lower gate drive strength suffices.
IRF8721TRPBF	SO-8 package; R_DS(ON) = 8.5 mΩ; Q_SW = 14.5 nC; same V_DSS = 100 V; slightly larger footprint (5.0 × 6.2 mm).	Compatible with similar PCB layout but lacks exposed drain pad; R_th(ch-c) = 3.5 °C/W limits power density.	Select when existing SO-8 land pattern reuse is prioritized and thermal headroom exceeds 30 W.

Compared with IXTP80N10T and IRF8721TRPBF, TPH8R80ANH,L1Q offers superior power density due to its SOP Advance package with thermal pad, lowest R_DS(ON) × Q_g FoM, and verified avalanche ruggedness-making it optimal for high-efficiency, high-frequency, space-constrained power stages.

Availability

TPH8R80ANH,L1Q is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and switching voltage regulators requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and communications infrastructure programs.

Supply support for TPH8R80ANH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in MOSFET process innovation and reliability engineering.

TPH8R80ANH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications in computing, industrial, and telecom power supplies where low R_DS(ON) and fast switching are critical.

FAQ

What is the maximum continuous drain current rating for TPH8R80ANH,L1Q?

The TPH8R80ANH,L1Q has a maximum continuous drain current (I_D) of 59 A at case temperature T_c = 25 °C. This rating assumes proper PCB copper area and thermal management; derating applies above 25 °C per the R_th(ch-c) = 2.04 °C/W specification. At T_c = 100 °C, the usable I_D drops to approximately 32 A.

Does TPH8R80ANH,L1Q support gate drive from a 3.3 V microcontroller?

TPH8R80ANH,L1Q is not guaranteed to fully enhance with 3.3 V gate drive due to its V_th range of 2.0–4.0 V and R_DS(ON) specified at V_GS = 10 V. While it may conduct weakly at 3.3 V, full on-state performance (7.4 mΩ) requires ≥10 V drive. A gate driver or level shifter is recommended for reliable operation in high-current applications.

What is the safe operating area (SOA) limitation for TPH8R80ANH,L1Q in linear mode?

The TPH8R80ANH,L1Q SOA is defined in Figure 8.14 of its datasheet and is limited by both thermal and avalanche constraints. In DC linear operation, the maximum allowable V_DS × I_D product is governed by R_th(ch-c) = 2.04 °C/W and T_ch ≤ 150 °C. For example, at V_DS = 20 V, the safe continuous I_D is ~2.5 A without forced cooling.

Is TPH8R80ANH,L1Q suitable for avalanche-rated applications?

Yes, TPH8R80ANH,L1Q is rated for single-pulse avalanche energy (E_AS) of 79 mJ under specified test conditions (V_DD = 60 V, I_AR = 32 A, L = 0.084 mH). This makes it suitable for inductive switching applications such as motor drives and relay drivers where unclamped inductive kick must be absorbed without failure.

What is the gate-source voltage limit for TPH8R80ANH,L1Q?

The absolute maximum gate-source voltage (V_GSS) for TPH8R80ANH,L1Q is ±20 V. Exceeding this rating risks irreversible gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) or active regulation to ensure transient spikes remain within this limit, especially in high-dV/dt environments.

TPH8R80ANH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 61W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH8R80ANH,L1Q FAQ

1.How can I place an order for TPH8R80ANH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH8R80ANH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH8R80ANH,L1Q reliable?

The price and inventory of TPH8R80ANH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH8R80ANH,L1Q is usually 5 days.

3.What payment methods are accepted for TPH8R80ANH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH8R80ANH,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH8R80ANH,L1Q?

TPH8R80ANH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH8R80ANH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH8R80ANH,L1Q?

For technical support, including TPH8R80ANH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH8R80ANH,L1Q requirements.

6.How does Aetrix verify that TPH8R80ANH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPH8R80ANH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH8R80ANH,L1Q meets industry standards.

7.What is the process for return or replacement of TPH8R80ANH,L1Q?

All TPH8R80ANH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH8R80ANH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH8R80ANH,L1Q part is unused and in its original packaging.

Return procedure for TPH8R80ANH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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