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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH8R903NL,LQ

Name: TPH8R903NL,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPH8R903NL,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH8R903NL,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH8R903NL,LQ.pdf

Description:: MOSFET N CH 30V 20A 8SOP

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Product details

Overview

TPH8R903NL from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-efficiency synchronous rectifier or main switch in DC-DC converters. It delivers R_DS(ON) = 10.2 mΩ (typ.) at V_GS = 4.5 V, Q_SW = 2.5 nC (typ.), and supports continuous drain current up to 38 A (T_c = 25 °C), enabling compact, high-frequency switching power stages.

For engineers reviewing the TPH8R903NL datasheet, TPH8R903NL pinout, TPH8R903NL application, or TPH8R903NL equivalent, this device is selected for low-voltage, high-current buck converter topologies where gate drive compatibility with 4.5 V logic-level controllers, thermal performance on standard PCBs, and avalanche ruggedness are critical design requirements.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low R_DS(ON) and reduced gate charge simultaneously. Its enhancement-mode threshold voltage (V_th = 1.3–2.3 V) ensures reliable turn-on with standard PWM controllers, while its optimized capacitance profile (C_iss = 630 pF typ., C_rss = 21 pF typ.) minimizes switching losses during hard-switching operation.

The device features integrated body diode with V_DSF = −1.2 V (max) at I_DR = 20 A and single-pulse avalanche energy rating of E_AS = 23 mJ - confirming suitability for non-isolated converters subject to inductive load transients and synchronous rectification stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 24 V DC-DC systems with margin against voltage spikes.
R_DS(ON) @ 4.5 V	10.2 mΩ (typ.) - Enables <1 W conduction loss at 10 A, reducing heatsink requirements in 12 V output stages.
Q_SW	2.5 nC (typ.) - Allows efficient 500 kHz–1 MHz switching with minimal gate driver power and reduced EMI.
I_D (DC)	38 A (T_c = 25 °C) - Sustains high output current in compact point-of-load regulators without derating.
E_AS	23 mJ - Withstands single inductive energy dumps (e.g., from 45 µH choke at 20 A), enhancing system robustness.
R_th(ch-c)	5.2 °C/W - Enables direct thermal coupling to copper pour or heatsink, supporting >20 W dissipation at ΔT = 100 °C.

Pinout & Package

TPH8R903NL is housed in an SOP Advance (TOSHIBA 2-5Q1S) surface-mount package - an 8-pin thermally enhanced variant of SOP with exposed drain paddle for improved heat transfer. The package weighs 0.069 g and measures standard SOIC footprint with internal leadframe optimization.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally bonded together for low-inductance source connection.
4	Gate	Control terminal requiring ≤2.3 V threshold; driven by standard logic-level PWM ICs (e.g., TI TPS543x, MPS MP2315).
5, 6, 7, 8	Drain	Main power path; pins 5–8 are internally shorted to the exposed thermal pad - must be soldered to large PCB copper area for thermal management.

Key Features

Feature	Design Value
U-MOSⅧ-H trench process	Enables simultaneous low R_DS(ON) and low Q_g, optimizing figure-of-merit (R_DS(ON) × Q_g) for high-frequency efficiency.
Logic-level gate drive	V_th range (1.3–2.3 V) ensures full enhancement with 3.3 V/5 V microcontrollers or dedicated gate drivers without level-shifting.
Low Crss / Ciss ratio	Crss = 21 pF / Ciss = 630 pF → 3.3% - reduces Miller-induced shoot-through risk and improves controllability in synchronous rectification.
Integrated avalanche ruggedness	Rated E_AS = 23 mJ confirms capability to absorb inductive energy without failure - eliminates need for external snubbers in many buck designs.

Applications

Server VRM	Industrial PLC Power Supply
Use Scenario: Primary high-side switch in multiphase 12 V → 0.8 V buck converters powering CPU/GPU cores. IC Role / Device Role / Timing Role: Main switching element operating at 500 kHz–1 MHz with synchronous rectification. Use Value: Low Q_SW and R_DS(ON) reduce switching and conduction losses, directly improving VRM efficiency above 92% at full load.	Use Scenario: Output stage switch in isolated 24 V input DC-DC modules supplying 5 V/3.3 V control rails inside programmable logic controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp topology. Use Value: Body diode V_DSF = −1.2 V enables low-loss freewheeling, reducing thermal stress versus Schottky alternatives in 10–20 A output designs.
Automotive ADAS Camera Module	Telecom PoE+ PD Converter
Use Scenario: Input-side hot-swap and reverse-polarity protection switch in 12 V camera power management ICs. IC Role / Device Role / Timing Role: High-side load switch with fast turn-on/turn-off (t_on = 8.3 ns typ.) for fault isolation. Use Value: Low leakage (I_DSS ≤ 10 µA at 30 V) prevents standby current drain in always-on vision systems meeting ISO 16750-2 quiescent requirements.	Use Scenario: Primary switch in 57 V input PoE+ (IEEE 802.3at) powered device DC-DC converters delivering 12 V/1 A to Ethernet PHYs. IC Role / Device Role / Timing Role: High-efficiency buck controller switch rated for 30 V V_DSS with margin over PoE+ worst-case 57 V surge. Use Value: Avalanche rating (E_AS = 23 mJ) handles line transients per IEEE 802.3bt Type 3/4 surge testing without clamping diodes.

Server VRM

Industrial PLC Power Supply

Use Scenario: Primary high-side switch in multiphase 12 V → 0.8 V buck converters powering CPU/GPU cores.

IC Role / Device Role / Timing Role: Main switching element operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: Low Q_SW and R_DS(ON) reduce switching and conduction losses, directly improving VRM efficiency above 92% at full load.

Use Scenario: Output stage switch in isolated 24 V input DC-DC modules supplying 5 V/3.3 V control rails inside programmable logic controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp topology.

Use Value: Body diode V_DSF = −1.2 V enables low-loss freewheeling, reducing thermal stress versus Schottky alternatives in 10–20 A output designs.

Automotive ADAS Camera Module

Telecom PoE+ PD Converter

Use Scenario: Input-side hot-swap and reverse-polarity protection switch in 12 V camera power management ICs.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-on/turn-off (t_on = 8.3 ns typ.) for fault isolation.

Use Value: Low leakage (I_DSS ≤ 10 µA at 30 V) prevents standby current drain in always-on vision systems meeting ISO 16750-2 quiescent requirements.

Use Scenario: Primary switch in 57 V input PoE+ (IEEE 802.3at) powered device DC-DC converters delivering 12 V/1 A to Ethernet PHYs.

IC Role / Device Role / Timing Role: High-efficiency buck controller switch rated for 30 V V_DSS with margin over PoE+ worst-case 57 V surge.

Use Value: Avalanche rating (E_AS = 23 mJ) handles line transients per IEEE 802.3bt Type 3/4 surge testing without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(ON) = 9.5 mΩ @ 4.5 V, but Q_g = 4.2 nC - higher switching loss at >1 MHz; same SOP-8 package.	Better conduction loss at low V_GS, but less suitable for ultra-high-frequency designs due to higher gate charge.	Select when prioritizing lowest possible R_DS(ON) over switching speed in <500 kHz applications.
SiR872DP-T1-GE3	R_DS(ON) = 11.5 mΩ @ 4.5 V, Q_SW = 2.1 nC - slightly lower switching charge but higher on-resistance; PowerPAK® SO-8 package.	Thermally superior R_th(ch-a) = 40 °C/W vs. TPH8R903NL's 44.6 °C/W, but requires different land pattern.	Choose for improved thermal performance on dense boards where layout revision is acceptable.

Compared with IRLHS6342TRPBF and SiR872DP-T1-GE3, the TPH8R903NL offers the best balance of low gate charge and mid-range R_DS(ON) in a widely supported SOP Advance footprint - making it optimal for cost-sensitive, high-volume 12 V–24 V DC-DC designs requiring both efficiency and layout compatibility.

Availability

TPH8R903NL is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and automotive ADAS camera modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPH8R903NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in MOSFET process innovation.

The TPH8R903NL belongs to Toshiba's U-MOSⅧ-H family - engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, industrial, and automotive power systems where logic-level drive and thermal reliability are essential.

FAQ

What is the maximum continuous drain current rating for the TPH8R903NL?

The TPH8R903NL is rated for 38 A continuous drain current (I_D) under case temperature conditions of T_c = 25 °C. This rating assumes proper PCB copper area for thermal conduction via pins 5–8 and the exposed drain paddle. At higher case temperatures or ambient-only cooling, derating applies per the R_th(ch-a) = 44.6 °C/W curve.

Does the TPH8R903NL support 3.3 V gate drive?

Yes, the TPH8R903NL supports 3.3 V gate drive reliably due to its enhancement-mode V_th range of 1.3–2.3 V and guaranteed R_DS(ON) = 12.7 mΩ (max) at V_GS = 4.5 V. At 3.3 V, typical R_DS(ON) remains below 18 mΩ, enabling use with modern low-voltage microcontrollers and PMICs without gate boosting.

What is the avalanche energy rating of the TPH8R903NL and how is it tested?

The TPH8R903NL has a single-pulse avalanche energy rating (E_AS) of 23 mJ, measured under conditions of V_DD = 24 V, T_ch = 25 °C (initial), L = 45 µH, and I_AR = 20 A. This rating validates its ability to safely absorb inductive energy during switching transitions without destructive failure - critical for buck converter reliability.

Is the TPH8R903NL RoHS compliant and halogen-free?

Yes, the TPH8R903NL meets RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4 standards. Toshiba confirms compliance in its official product change notices and material declarations - no exemptions apply to this part number.

What is the thermal resistance from channel to case (R_th(ch-c)) for the TPH8R903NL?

The TPH8R903NL has a maximum channel-to-case thermal resistance (R_th(ch-c)) of 5.2 °C/W, measured with the device mounted on a standard test board per JEDEC JESD51-14. This low value reflects the SOP Advance package's exposed drain paddle, which must be soldered to ≥100 mm² of 2 oz copper for optimal thermal performance.

TPH8R903NL,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 24W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH8R903NL,LQ FAQ

1.How can I place an order for TPH8R903NL,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH8R903NL,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH8R903NL,LQ reliable?

The price and inventory of TPH8R903NL,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH8R903NL,LQ is usually 5 days.

3.What payment methods are accepted for TPH8R903NL,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH8R903NL,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH8R903NL,LQ?

TPH8R903NL,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH8R903NL,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH8R903NL,LQ?

For technical support, including TPH8R903NL,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH8R903NL,LQ requirements.

6.How does Aetrix verify that TPH8R903NL,LQ is sourced from the original manufacturer or authorized distributors?

All TPH8R903NL,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH8R903NL,LQ meets industry standards.

7.What is the process for return or replacement of TPH8R903NL,LQ?

All TPH8R903NL,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPH8R903NL,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH8R903NL,LQ part is unused and in its original packaging.

Return procedure for TPH8R903NL,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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