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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH9R00CQ5,LQ

Name: TPH9R00CQ5,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPH9R00CQ5,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH9R00CQ5,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH9R00CQ5,LQ.pdf

Description:: 150V U-MOS X-H SOP-ADVANCE(N) 9M

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Product details

Overview

TPH9R00CQ5,LQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-frequency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 7.3 mΩ (typ., V_GS = 10 V), Q_SW = 11.7 nC (typ.), trr = 40 ns (typ.), and supports V_DSS = 150 V with ID = 64 A (DC) at T_c = 25 °C.

For engineers reviewing the TPH9R00CQ5,LQ datasheet, TPH9R00CQ5,LQ pinout, TPH9R00CQ5,LQ application, or TPH9R00CQ5,LQ equivalent, key selection criteria include low gate charge for fast switching, low reverse recovery charge for reduced body-diode losses, and SOP Advance(N) package thermal performance in compact power stages.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and optimized capacitance ratios (C_iss = 3500 pF typ., C_rss = 19 pF typ.) for improved dv/dt immunity and reduced Miller effect. Its enhancement-mode threshold (V_th = 3.1–4.5 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

The integrated body diode exhibits fast reverse recovery (trr = 40 ns typ., Q_rr = 34 nC typ.) and low forward voltage (V_DSF = −1.2 V typ. at IDR = 16 A), enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum drain-source blocking voltage for 48 V input industrial and telecom DC-DC designs.
R_DS(ON)	7.3 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 32 A, critical for high-current POL converters.
Q_SW	11.7 nC (typ.) - Low total switching charge reduces gate drive power and enables >1 MHz operation with minimal driver stress.
trr / Q_rr	40 ns / 34 nC (typ.) - Minimizes body-diode switching loss and EMI in hard-switched topologies with inductive loads.
P_D (T_c = 25 °C)	210 W - High power dissipation capability when mounted on heatsinked PCBs or metal-core substrates.
R_th(ch-c)	0.71 °C/W - Enables direct thermal coupling to heatsinks, supporting continuous 64 A operation with proper cooling.
ID (DC)	64 A - Rated continuous drain current at case temperature 25 °C, validated for sustained load in motor phase switches.

Pinout & Package

SOP Advance(N) package (TOSHIBA designation: 2-5W1A), 8-pin surface-mount, thermally enhanced with exposed drain pad. Pin 1–3: Source; Pin 4: Gate; Pins 5–8: Drain (internally paralleled for low-inductance, high-current path).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal die array; low-inductance connection essential for minimizing shoot-through risk in half-bridge layouts.
4	Gate	Single gate input terminal; requires ≤4.7 Ω series resistance to damp ringing due to low gate resistance (r_g = 1.3 Ω typ.).
5, 6, 7, 8	Drain	Paralleled drain terminals forming low-impedance, high-current output path; connected to exposed thermal pad for heat extraction.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 7.3 mΩ R_DS(ON) at 150 V rating-higher cell density than planar MOSFETs without compromising avalanche ruggedness.
Low Q_rr and fast trr	34 nC / 40 ns body-diode recovery reduces switching loss by >30% vs. standard 150 V MOSFETs in 300 kHz buck converters.
Enhancement-mode V_th	3.1–4.5 V threshold ensures robust noise margin and compatibility with 3.3 V/5 V logic-level gate drivers without level-shifting.
Thermally optimized SOP Advance(N)	0.71 °C/W channel-to-case resistance allows 64 A operation with <100 °C junction rise under forced-air cooling.

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: 48 V–12 V step-down converter in telecom power shelves operating at 500 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology. Use Value: 7.3 mΩ R_DS(ON) and 11.7 nC Q_SW reduce conduction + switching loss to <1.2 W at 32 A, enabling >95% efficiency.	Use Scenario: Point-of-load regulator supplying FPGA core voltage (0.8 V/60 A) in AI accelerator cards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body-diode recovery. Use Value: 40 ns trr and −1.2 V V_DSF minimize dead-time loss and improve light-load efficiency over discrete Schottky solutions.
Motor Drivers	Industrial Power Supplies
Use Scenario: 24 V BLDC motor gate driver stage in automated warehouse conveyors. IC Role / Device Role / Timing Role: Half-bridge leg switch handling 40 A peak phase current with PWM up to 20 kHz. Use Value: 320 A pulsed ID rating and 139 mJ EAS support short-circuit robustness during stall conditions without desaturation protection.	Use Scenario: Input-stage switch in 150 V-rated industrial AC-DC front-end with active PFC. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage. Use Value: 150 V V_DSS, 64 A DC rating, and low C_rss (19 pF) ensure stable operation under high-voltage transients and reduce EMI filter size.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: 48 V–12 V step-down converter in telecom power shelves operating at 500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology.

Use Value: 7.3 mΩ R_DS(ON) and 11.7 nC Q_SW reduce conduction + switching loss to <1.2 W at 32 A, enabling >95% efficiency.

Use Scenario: Point-of-load regulator supplying FPGA core voltage (0.8 V/60 A) in AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body-diode recovery.

Use Value: 40 ns trr and −1.2 V V_DSF minimize dead-time loss and improve light-load efficiency over discrete Schottky solutions.

Motor Drivers

Industrial Power Supplies

Use Scenario: 24 V BLDC motor gate driver stage in automated warehouse conveyors.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 40 A peak phase current with PWM up to 20 kHz.

Use Value: 320 A pulsed ID rating and 139 mJ EAS support short-circuit robustness during stall conditions without desaturation protection.

Use Scenario: Input-stage switch in 150 V-rated industrial AC-DC front-end with active PFC.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage.

Use Value: 150 V V_DSS, 64 A DC rating, and low C_rss (19 pF) ensure stable operation under high-voltage transients and reduce EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(ON) = 8.5 mΩ (V_GS = 10 V); Q_rr = 52 nC (typ.); TO-220FP package	Higher thermal resistance (R_th(j-a) ≈ 62 °C/W) limits high-frequency use in space-constrained boards.	Preferred where through-hole mounting and higher avalanche energy (EAS = 220 mJ) are prioritized over board area.
IXTH110N15X2	R_DS(ON) = 7.0 mΩ (V_GS = 10 V); trr = 55 ns (typ.); TO-247 package	Larger footprint and higher gate charge (Q_g = 58 nC) increase driver complexity and layout sensitivity.	Suitable for high-reliability industrial inverters requiring extended SOA and proven 175 °C operation.

Compared with STP110N15F7 and IXTH110N15X2, the TPH9R00CQ5,LQ offers superior power density and switching efficiency in surface-mount, high-frequency power stages-especially where low Q_rr, compact SOP Advance(N) packaging, and thermal performance at elevated frequencies are critical.

Availability

TPH9R00CQ5,LQ is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, motor drivers, and industrial switching voltage regulators requiring stable component supply and long-term production continuity.

Supply support for TPH9R00CQ5,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET innovation.

The TPH9R00CQ5,LQ belongs to Toshiba's U-MOS-H high-voltage MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in compact industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for the TPH9R00CQ5,LQ?

The TPH9R00CQ5,LQ is rated for 64 A DC drain current at case temperature T_c = 25 °C. This rating assumes proper PCB copper area and thermal management per the SOP Advance(N) package guidelines. At higher case temperatures, derating applies-e.g., ~40 A at T_c = 80 °C-per the guaranteed maximum PD vs. T_c curve in the datasheet.

Does the TPH9R00CQ5,LQ have a built-in body diode, and how is its performance specified?

Yes, the TPH9R00CQ5,LQ includes an integrated body diode with characterized reverse recovery parameters: trr = 40 ns (typ.) and Q_rr = 34 nC (typ.) at IDR = 16 A and −dI_DR/dt = 100 A/µs. These values are measured under standardized conditions and enable accurate loss modeling in synchronous rectifier and freewheeling applications.

What gate drive voltage is required to fully enhance the TPH9R00CQ5,LQ?

The TPH9R00CQ5,LQ has a gate threshold voltage V_th of 3.1–4.5 V (V_DS = 10 V, I_D = 1.0 mA). For full enhancement and minimum R_DS(ON), a gate-source voltage of ≥10 V is recommended-achieving the specified 7.3 mΩ (typ.) and ensuring robust operation across temperature and manufacturing variation.

Is the TPH9R00CQ5,LQ suitable for avalanche-rated applications?

Yes-the TPH9R00CQ5,LQ is characterized for single-pulse avalanche energy EAS = 139 mJ (V_DD = 60 V, T_ch = 25 °C, L = 47 µH). This rating supports limited inductive switching events such as startup surges or fault transients but does not imply repetitive avalanche capability; design must avoid repeated avalanche stress.

What is the thermal resistance from channel to case (R_th(ch-c)) for the TPH9R00CQ5,LQ?

The TPH9R00CQ5,LQ has a maximum channel-to-case thermal resistance R_th(ch-c) of 0.71 °C/W, measured under standard test conditions (T_c = 25 °C). This low value reflects the thermally optimized SOP Advance(N) package with exposed drain pad, enabling efficient heat transfer to heatsinks or copper-filled PCB layers.

TPH9R00CQ5,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSX-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH9R00CQ5,LQ FAQ

1.How can I place an order for TPH9R00CQ5,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH9R00CQ5,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH9R00CQ5,LQ reliable?

The price and inventory of TPH9R00CQ5,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH9R00CQ5,LQ is usually 5 days.

3.What payment methods are accepted for TPH9R00CQ5,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH9R00CQ5,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH9R00CQ5,LQ?

TPH9R00CQ5,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH9R00CQ5,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH9R00CQ5,LQ?

For technical support, including TPH9R00CQ5,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH9R00CQ5,LQ requirements.

6.How does Aetrix verify that TPH9R00CQ5,LQ is sourced from the original manufacturer or authorized distributors?

All TPH9R00CQ5,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH9R00CQ5,LQ meets industry standards.

7.What is the process for return or replacement of TPH9R00CQ5,LQ?

All TPH9R00CQ5,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPH9R00CQ5,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH9R00CQ5,LQ part is unused and in its original packaging.

Return procedure for TPH9R00CQ5,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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