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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN11006NL,LQ

Name: TPN11006NL,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN11006NL,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN11006NL,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN11006NL,LQ.pdf

Description:: MOSFET N-CH 60V 17A 8TSON

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Product details

Overview

TPN11006NL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOS-H process, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 9.6 mΩ (typ.) at V_GS = 10 V, Q_SW = 6.4 nC (typ.), and 60 V V_DSS, operating reliably up to 150 °C channel temperature.

For engineers reviewing the TPN11006NL datasheet, TPN11006NL pinout, TPN11006NL application, or TPN11006NL equivalent, key selection criteria include low conduction loss, fast switching capability, avalanche ruggedness (E_AS = 35 mJ), thermal resistance (R_th(ch-c) = 4.16 °C/W), and TSON Advance package compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced gate charge. Its enhancement-mode operation (V_th = 1.5–2.5 V) enables direct drive from standard logic-level controllers, while its 60 V V_DSS rating supports 48 V bus applications including industrial DC-DC stages and brushed DC motor H-bridges.

The device features integrated body diode with V_DSF = −1.2 V (typ.) at I_DR = 17 A and exhibits robust unclamped inductive switching capability (I_AR = 17 A, E_AS = 35 mJ). Thermal design is supported by validated R_th(ch-c) and R_th(ch-a) values under defined board-mount conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports 48 V nominal input systems with 20 % margin for transients
R_DS(ON)	9.6 mΩ (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 10 A continuous drain current
Q_SW	6.4 nC (typ.) - Reduces switching energy loss and gate driver power requirement
I_D (DC)	37 A (T_c = 25 °C) - Sustains high-current loads when heatsinked to case
E_AS	35 mJ - Withstands unclamped inductive energy during turn-off in motor or converter flyback
R_th(ch-c)	4.16 °C/W - Enables precise junction-to-heatsink thermal modeling for thermal margining
V_th	1.5–2.5 V - Compatible with 3.3 V and 5 V microcontroller GPIOs without level-shifting

Pinout & Package

TPN11006NL is housed in the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), featuring an exposed drain pad for enhanced thermal performance and compact 3.3 × 3.3 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel FET cells; tied to PCB ground plane for low-inductance return path
4	Gate	Control terminal requiring <6.4 nC total charge for full enhancement; sensitive to ESD (±20 V max)
5, 6, 7, 8	Drain	High-current output node connected to exposed copper pad; carries full load current and dissipates heat to PCB

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 9.6 mΩ R_DS(ON) in 3.3 × 3.3 mm package, reducing conduction loss vs. planar alternatives
Low Q_SW	6.4 nC minimizes gate drive loss and allows use of smaller, lower-cost gate drivers
Avalanche-rated	Guaranteed 35 mJ single-pulse energy handling supports reliable operation in inductive switching circuits
Logic-level compatible	V_th range (1.5–2.5 V) ensures turn-on with standard 3.3 V/5 V digital outputs without external bias
TSON Advance thermal design	Exposed drain pad and low R_th(ch-c) (4.16 °C/W) enable efficient heat transfer to PCB copper

Applications

Switching Voltage Regulators	DC-DC Converters
Use Scenario: High-frequency synchronous buck regulator in telecom power supplies delivering 12 V @ 20 A from 48 V input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, conducting during bottom-switch conduction phase. Use Value: 9.6 mΩ R_DS(ON) reduces conduction loss below 2 W, improving efficiency over discrete diode solutions.	Use Scenario: Isolated forward converter secondary-side synchronous rectification stage in industrial PLC power modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to minimize forward voltage drop. Use Value: Q_SW = 6.4 nC enables clean, fast turn-on/turn-off synchronized with primary-side controller timing.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for automated valve actuators. IC Role / Device Role / Timing Role: High-current switching element in H-bridge configuration, handling bidirectional load current up to 17 A peak. Use Value: Avalanche energy rating (35 mJ) protects against inductive kickback during PWM commutation.	Use Scenario: Input-stage OR-ing FET in redundant 24 V/48 V backup power system for factory automation controllers. IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path selection between two independent supplies. Use Value: Low V_th (1.5–2.5 V) allows direct control from supervisor IC outputs without gate driver circuitry.

Switching Voltage Regulators

DC-DC Converters

Use Scenario: High-frequency synchronous buck regulator in telecom power supplies delivering 12 V @ 20 A from 48 V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, conducting during bottom-switch conduction phase.

Use Value: 9.6 mΩ R_DS(ON) reduces conduction loss below 2 W, improving efficiency over discrete diode solutions.

Use Scenario: Isolated forward converter secondary-side synchronous rectification stage in industrial PLC power modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to minimize forward voltage drop.

Use Value: Q_SW = 6.4 nC enables clean, fast turn-on/turn-off synchronized with primary-side controller timing.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for automated valve actuators.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge configuration, handling bidirectional load current up to 17 A peak.

Use Value: Avalanche energy rating (35 mJ) protects against inductive kickback during PWM commutation.

Use Scenario: Input-stage OR-ing FET in redundant 24 V/48 V backup power system for factory automation controllers.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path selection between two independent supplies.

Use Value: Low V_th (1.5–2.5 V) allows direct control from supervisor IC outputs without gate driver circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(ON) = 21 mΩ (V_GS = 4.5 V); 30 V V_DSS; SOT-23 package	Limited to ≤30 V systems; higher on-resistance increases conduction loss at same current	Choose only for low-voltage (<24 V), space-constrained designs where 60 V rating is unnecessary
SiR202DP-T1-GE3	R_DS(ON) = 7.0 mΩ (V_GS = 10 V); 60 V V_DSS; PowerPAK® 1212-8 package	Larger footprint (3.3 × 3.3 mm vs. 3.3 × 3.3 mm same area but different pad layout); higher cost	Prefer when lower R_DS(ON) justifies rework for thermal margin in high-ambient environments

Compared with IRLML6344TRPBF and SiR202DP-T1-GE3, the TPN11006NL offers balanced performance: lower R_DS(ON) than the IRLML6344TRPBF in 60 V systems, and identical footprint compatibility with tighter gate charge (6.4 nC vs. ~10 nC) than the SiR202DP-T1-GE3, easing gate driver design.

Availability

TPN11006NL is available at Aetrix Electronics and suitable for switching voltage regulators, DC-DC converters, and motor drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TPN11006NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TPN11006NL belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion in industrial and automotive-qualified auxiliary systems.

FAQ

What is the maximum continuous drain current for TPN11006NL at 25 °C case temperature?

The TPN11006NL supports a maximum continuous drain current (I_D) of 37 A when the case temperature (T_c) is maintained at 25 °C. This rating assumes proper heatsinking and is limited by silicon capability-not package thermal resistance alone. At elevated case temperatures, derating applies per the datasheet's PD–Tc curve. The TPN11006NL must be operated within its Safe Operating Area to avoid thermal runaway.

Does TPN11006NL support logic-level gate drive without a dedicated gate driver IC?

Yes, the TPN11006NL has a gate threshold voltage (V_th) range of 1.5–2.5 V at V_DS = 10 V and I_D = 0.2 mA, making it compatible with standard 3.3 V and 5 V logic outputs. However, for reliable full enhancement and fast switching, a gate driver is recommended-especially at high frequencies-due to its 6.4 nC total gate charge (Q_SW). The TPN11006NL's low V_th avoids need for level shifters but does not eliminate gate drive strength requirements.

What is the avalanche energy rating of TPN11006NL and how is it tested?

The TPN11006NL is rated for 35 mJ single-pulse avalanche energy (E_AS) under specified test conditions: V_DD ≈ 48 V, T_ch = 25 °C (initial), L = 95 µH, and I_AR = 17 A. This rating reflects guaranteed ruggedness during unclamped inductive switching events, such as motor freewheeling or converter flyback. The TPN11006NL's E_AS is validated per JEDEC standards and documented in Toshiba's reliability reports.

Is TPN11006NL RoHS compliant and lead-free?

Yes, the TPN11006NL is RoHS compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Toshiba confirms compliance in its environmental documentation, and the device uses matte tin plating on terminals. No exemptions apply. For full material declarations and substance reporting, refer to Toshiba's official product page or contact Aetrix Electronics for certified compliance documentation for the TPN11006NL.

What is the thermal resistance from channel to case (R_th(ch-c)) for TPN11006NL and how is it measured?

The TPN11006NL has a maximum channel-to-case thermal resistance (R_th(ch-c)) of 4.16 °C/W, measured under steady-state conditions with the device mounted on a standard heatsink per JEDEC JESD51-2. This value is critical for calculating junction temperature rise above heatsink temperature and is validated using transient dual-interface testing. The TPN11006NL's low R_th(ch-c) enables effective thermal coupling to PCB copper or external heatsinks in high-power density designs.

TPN11006NL,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.4mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta), 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN11006NL,LQ FAQ

1.How can I place an order for TPN11006NL,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN11006NL,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN11006NL,LQ reliable?

The price and inventory of TPN11006NL,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN11006NL,LQ is usually 5 days.

3.What payment methods are accepted for TPN11006NL,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN11006NL,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPN11006NL,LQ?

TPN11006NL,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN11006NL,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN11006NL,LQ?

For technical support, including TPN11006NL,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN11006NL,LQ requirements.

6.How does Aetrix verify that TPN11006NL,LQ is sourced from the original manufacturer or authorized distributors?

All TPN11006NL,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN11006NL,LQ meets industry standards.

7.What is the process for return or replacement of TPN11006NL,LQ?

All TPN11006NL,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPN11006NL,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN11006NL,LQ part is unused and in its original packaging.

Return procedure for TPN11006NL,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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