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Toshiba Semiconductor and Storage TPN13008NH,L1Q
- Part No.:
- TPN13008NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPN13008NH,L1Q.pdf
- Description:
- MOSFET N-CH 80V 18A 8TSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,415
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Product details
Overview
TPN13008NH,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET in TSON Advance package, rated for 80 V VDSS, 40 A DC drain current, and 10.8 mΩ RDS(ON) at VGS = 10 V, optimized for high-efficiency DC-DC converters and motor drivers.
For engineers reviewing the TPN13008NH,L1Q datasheet, TPN13008NH,L1Q pinout, TPN13008NH,L1Q application, or TPN13008NH,L1Q equivalent, key selection criteria include its low gate charge (6.7 nC typ.), avalanche energy rating (114 mJ), thermal resistance (2.97 °C/W ch-to-case), and TSON Advance footprint compatibility with space-constrained industrial and automotive power stages.
Technical Context
This device implements a trench-gate U-MOS-H structure enabling enhanced switching speed and reduced conduction loss. Its 80 V breakdown voltage and 150 °C channel temperature limit support operation in 48 V bus systems and high-duty-cycle motor control.
The TSON Advance package integrates four parallel drain terminals (pins 5–8) and dual-source configuration (pins 1–3), delivering low-inductance source return paths and improved thermal dissipation over standard SO-8 equivalents.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V nominal input systems with 60 % derating margin against transients |
| RDS(ON) (VGS = 10 V) | 10.8 mΩ (typ.) - enables <1.0 W conduction loss at 9 A continuous current |
| QSW | 6.7 nC (typ.) - reduces gate drive power and enables >500 kHz switching in synchronous buck stages |
| ID (DC) | 40 A - sustains full-load current in compact 25 mm² PCB footprints without external heatsinking |
| EAS | 114 mJ - provides single-pulse avalanche robustness during inductive load turn-off |
| Rth(ch-c) | 2.97 °C/W - allows direct thermal coupling to copper pour or metal-core PCBs for 100 % duty cycle operation |
| Vth | 2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
TSON Advance (2-3X1S) package: 8-pin, surface-mount, exposed drain pad for thermal and electrical connection; body size 3.0 × 3.0 × 0.85 mm; weight 0.029 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Parallel low-inductance source return path; connects directly to ground plane for EMI reduction |
| 4 | Gate | Control terminal requiring <6.7 nC charge for full enhancement; sensitive to ESD (±20 V max) |
| 5, 6, 7, 8 | Drain | Four parallel high-current drain terminals tied to internal chip drain metallization and exposed thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| U-MOS-H trench structure | Reduces specific on-resistance by 35 % vs. planar MOSFETs at same voltage class, improving power density |
| Low QSW/RDS(ON) ratio | 0.62 nC/mΩ - balances switching loss and conduction loss for optimal efficiency across 100–1000 kHz range |
| Enhancement-mode threshold | 2.0–4.0 V - eliminates need for negative gate bias and supports direct microcontroller GPIO drive |
| Integrated avalanche capability | 114 mJ single-pulse rating - withstands inductive kickback in motor H-bridge and solenoid drivers without external clamping |
Applications
| DC-DC Converters | Switching Voltage Regulators |
|---|---|
Use Scenario: High-frequency synchronous buck converter in telecom base station power modules. IC Role / Device Role / Timing Role: High-side power switch handling 48 V input, 12 V/20 A output with 500 kHz PWM. Use Value: 10.8 mΩ RDS(ON) and 6.7 nC QSW enable >95 % peak efficiency and minimal thermal rise on 2-layer PCB. | Use Scenario: Point-of-load regulator supplying FPGA core voltage in industrial PLC backplanes. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating with 3.3 V gate drive and 1 MHz switching. Use Value: Dual-source pins reduce source inductance, minimizing shoot-through risk and improving transient response. |
| Motor Drivers | Industrial Power Supplies |
Use Scenario: Half-bridge driver for 24 V BLDC fan in HVAC control units. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, commutated at 20 kHz. Use Value: 150 °C channel rating and 2.97 °C/W Rth(ch-c) allow continuous 18 A pulsed current without thermal throttling. | Use Scenario: Primary-side switch in isolated flyback adapter for factory automation sensors. IC Role / Device Role / Timing Role: 80 V-rated main switch sustaining 60 V line transients and 100 % duty cycle during brownout. Use Value: 114 mJ EAS prevents failure during output short-circuit events without snubber redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7480TRPBF | RDS(ON) = 11.5 mΩ (10 V), Qg = 22 nC, SO-8 package | Higher gate charge increases driver loss; larger SO-8 footprint limits board density | Prefer when legacy SO-8 layout reuse is required and switching frequency ≤200 kHz |
| SiR872DP-T1-GE3 | RDS(ON) = 9.0 mΩ (10 V), Qg = 27 nC, PowerPAK® 3.3×3.3 | Lower RDS(ON) but higher Qg; different pinout requires PCB revision | Choose for lower conduction loss where gate drive capability supports 27 nC charge |
Compared with IRF7480TRPBF and SiR872DP-T1-GE3, the TPN13008NH,L1Q delivers superior QSW/RDS(ON) trade-off and TSON Advance thermal performance, making it optimal for new designs targeting >300 kHz operation and minimal PCB area.
Availability
TPN13008NH,L1Q is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial power supplies requiring stable component supply and long-term lifecycle assurance.
Supply support for TPN13008NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on reliability and energy efficiency.
The TPN series targets high-performance power conversion applications, emphasizing low RDS(ON), fast switching, and rugged avalanche capability for industrial and automotive-grade systems.
FAQ
What is the maximum continuous drain current rating for TPN13008NH,L1Q at 25 °C ambient?
The TPN13008NH,L1Q has a DC drain current rating of 40 A at Tc = 25 °C. This rating assumes ideal heat sinking via the exposed drain pad; actual usable current depends on PCB copper area, airflow, and allowable channel temperature (max 150 °C). At 100 °C case temperature, the derated ID drops to approximately 18 A per absolute maximum ratings table.
Does TPN13008NH,L1Q support logic-level gate drive?
Yes, the TPN13008NH,L1Q features an enhancement-mode gate threshold voltage of 2.0–4.0 V at VDS = 10 V and ID = 0.2 mA, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. However, full RDS(ON) specification (10.8 mΩ) requires VGS = 10 V, so gate drive voltage should be confirmed per application requirements.
What is the thermal resistance from channel to case for TPN13008NH,L1Q?
The channel-to-case thermal resistance (Rth(ch-c)) of the TPN13008NH,L1Q is 2.97 °C/W, measured under specified test conditions (Tc = 25 °C). This value reflects conduction through the exposed drain pad and is critical for calculating junction temperature rise when mounted on thermally enhanced PCBs with adequate copper pour.
Is TPN13008NH,L1Q suitable for avalanche-prone circuits like motor freewheeling?
Yes, the TPN13008NH,L1Q is rated for 114 mJ single-pulse avalanche energy (EAS) under defined test conditions (VDD = 60 V, IAR = 18 A). This makes it suitable for inductive load switching in motor drivers and relay drivers where controlled avalanche operation may occur during turn-off, provided design stays within the SOA curve limits.
What package type does TPN13008NH,L1Q use and how many pins are dedicated to drain connections?
The TPN13008NH,L1Q uses the TSON Advance (2-3X1S) package - an 8-pin surface-mount outline with dimensions 3.0 × 3.0 × 0.85 mm. Pins 5, 6, 7, and 8 are all internally connected to the drain, providing four parallel high-current paths and enhancing thermal and electrical performance versus conventional 8-pin packages.
TPN13008NH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.3mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta), 42W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSON Advance (3.1x3.1)
TPN13008NH,L1Q FAQ
1.How can I place an order for TPN13008NH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPN13008NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPN13008NH,L1Q reliable?
The price and inventory of TPN13008NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN13008NH,L1Q is usually 5 days.
3.What payment methods are accepted for TPN13008NH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN13008NH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPN13008NH,L1Q?
TPN13008NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPN13008NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPN13008NH,L1Q?
For technical support, including TPN13008NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN13008NH,L1Q requirements.
6.How does Aetrix verify that TPN13008NH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPN13008NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN13008NH,L1Q meets industry standards.
7.What is the process for return or replacement of TPN13008NH,L1Q?
All TPN13008NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN13008NH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPN13008NH,L1Q part is unused and in its original packaging.
Return procedure for TPN13008NH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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