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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN14006NH,L1Q

Name: TPN14006NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN14006NH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN14006NH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN14006NH,L1Q.pdf

Description:: MOSFET N CH 60V 13A 8TSON-ADV

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Product details

Overview

TPN14006NH,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 11 mΩ (typ.) at V_GS = 10 V, Q_SW = 5.5 nC (typ.), and supports V_DSS = 60 V, I_D = 33 A (DC), with TSON Advance package for thermal performance in compact power stages.

For engineers reviewing the TPN14006NH,L1Q datasheet, TPN14006NH,L1Q pinout, TPN14006NH,L1Q application, or TPN14006NH,L1Q equivalent, key selection criteria include gate charge optimization for synchronous buck topologies, low conduction loss at 6.5 A, avalanche ruggedness (E_AS = 43 mJ), and thermal resistance (R_th(ch-c) = 4.16 °C/W) under PCB-constrained layouts.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and fast switching with minimal gate drive energy. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Designed for hard-switched topologies, it features low C_iss = 1000 pF (typ.) and C_rss = 25 pF (typ.), enabling high-frequency operation up to 1 MHz while maintaining low EMI. The integrated body diode supports freewheeling in buck and half-bridge configurations with V_DSF = −1.2 V (typ.) at I_DR = 13 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage compatible with 48 V input DC-DC systems
R_DS(ON) @ 10 V	11 mΩ (typ.) - Enables ≤75 mW conduction loss at 6.5 A continuous current
Q_SW	5.5 nC (typ.) - Reduces gate drive power and enables efficient 500 kHz–1 MHz switching
E_AS	43 mJ - Supports single-pulse avalanche energy handling without failure in inductive load transients
R_th(ch-c)	4.16 °C/W - Allows 30 W power dissipation with ≤125 °C channel-to-case temperature rise
I_D (DC)	33 A - Rated continuous drain current at T_c = 25 °C for heatsink-mounted operation
V_th	2.0–4.0 V - Ensures robust turn-on margin with 3.3 V microcontroller GPIO or dedicated gate drivers

Pinout & Package

TSON Advance (TOSHIBA 2-3X1S) surface-mount package with exposed drain pad for thermal management; 0.02 g typical weight; 3.0 × 3.0 × 0.85 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; electrically tied to internal source metallization and thermal slug
4	Gate	Control terminal requiring <5.5 nC total charge for full enhancement; sensitive to ESD
5, 6, 7, 8	Drain	High-side switching node; connected to exposed copper pad for low-inductance, high-current routing

Key Features

Feature	Design Value
U-MOS-H trench process	Delivers 11 mΩ R_DS(ON) in 3×3 mm TSON Advance, reducing board area vs. SO-8 equivalents
Low Q_SW/Q_g ratio	5.5 nC switch charge enables faster dV/dt control and lower gate driver losses than comparable 60 V MOSFETs
Guaranteed avalanche capability	43 mJ single-pulse rating allows safe operation during inductive turn-off without external snubbers
Enhancement-mode V_th	2.0–4.0 V range ensures compatibility with both 3.3 V and 5 V logic-level gate drivers without level-shifting
Low leakage IDSS	≤10 µA at V_DS = 60 V minimizes standby power loss in always-on power rails

Applications

Switching Voltage Regulators	Motor Drivers
Use Scenario: Synchronous buck converter in point-of-load (POL) supplies for FPGA or ASIC core rails. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input to output inductor. Use Value: 11 mΩ R_DS(ON) and 5.5 nC Q_SW reduce conduction + switching losses, enabling >92% efficiency at 12 V input/1.2 V@15 A output.	Use Scenario: H-bridge leg in 24 V brushed DC motor control for industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM commutation. Use Value: Avalanche ruggedness (43 mJ) absorbs inductive kickback during rapid direction reversal, eliminating need for external flyback diodes.
DC-DC Converters	Power OR-ing Circuits
Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for telecom power modules. IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset and clamp timing. Use Value: 60 V V_DSS and 33 A I_D support 48 V input designs with margin for line transients and duty-cycle variation.	Use Scenario: Back-to-back configuration in redundant 12 V power distribution for network switches. IC Role / Device Role / Timing Role: Ideal diode replacement providing forward conduction and reverse blocking. Use Value: Low V_DSF = −1.2 V (typ.) and fast body diode recovery minimize forward drop and reverse recovery loss vs. Schottky solutions.

Switching Voltage Regulators

Motor Drivers

Use Scenario: Synchronous buck converter in point-of-load (POL) supplies for FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input to output inductor.

Use Value: 11 mΩ R_DS(ON) and 5.5 nC Q_SW reduce conduction + switching losses, enabling >92% efficiency at 12 V input/1.2 V@15 A output.

Use Scenario: H-bridge leg in 24 V brushed DC motor control for industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM commutation.

Use Value: Avalanche ruggedness (43 mJ) absorbs inductive kickback during rapid direction reversal, eliminating need for external flyback diodes.

DC-DC Converters

Power OR-ing Circuits

Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for telecom power modules.

IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset and clamp timing.

Use Value: 60 V V_DSS and 33 A I_D support 48 V input designs with margin for line transients and duty-cycle variation.

Use Scenario: Back-to-back configuration in redundant 12 V power distribution for network switches.

IC Role / Device Role / Timing Role: Ideal diode replacement providing forward conduction and reverse blocking.

Use Value: Low V_DSF = −1.2 V (typ.) and fast body diode recovery minimize forward drop and reverse recovery loss vs. Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(ON) = 22 mΩ @ 4.5 V; smaller 1.6×1.6 mm package; lower I_D = 4.3 A	Better suited for space-constrained, low-current (<5 A) logic-level loads	Select when gate drive is limited to 3.3–4.5 V and current demand is ≤5 A; not suitable for 33 A thermal design.
DMN3025LSD-13	R_DS(ON) = 2.5 mΩ @ 10 V; dual-SO8 package; higher Q_g = 19 nC	Optimized for ultra-low-loss, high-current (>20 A) but less efficient at high frequency due to higher gate charge	Prefer for low-frequency, high-current applications where switching loss is secondary to conduction loss.

Compared with IRLML6344TRPBF and DMN3025LSD-13, the TPN14006NH,L1Q balances mid-range current handling (33 A), low gate charge (5.5 nC), and compact TSON Advance packaging-making it optimal for 500 kHz–1 MHz DC-DC converters where layout area, thermal density, and switching efficiency are jointly constrained.

Availability

TPN14006NH,L1Q is available at Aetrix Electronics and suitable for switching voltage regulators, motor drivers, and DC-DC converters requiring stable component supply, RoHS-compliant sourcing, and long-term industrial lifecycle support.

Supply support for TPN14006NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon process innovation and reliability engineering.

The TPN series targets high-efficiency power conversion in industrial, computing, and consumer applications, emphasizing low R_DS(ON), fast switching, and ruggedness in compact surface-mount packages like TSON Advance.

FAQ

What is the maximum continuous drain current rating for TPN14006NH,L1Q?

The TPN14006NH,L1Q has a maximum continuous drain current (I_D) of 33 A at case temperature T_c = 25 °C. This rating assumes proper PCB copper area and thermal vias under the exposed drain pad. At higher temperatures or with limited heatsinking, derating per the R_th(ch-c) = 4.16 °C/W curve is required. The TPN14006NH,L1Q datasheet specifies 13 A for T_a = 25 °C on standard FR-4, confirming its dependency on thermal design.

Does TPN14006NH,L1Q support logic-level gate drive?

Yes, the TPN14006NH,L1Q is a logic-level MOSFET with V_th = 2.0–4.0 V and specified R_DS(ON) down to 14 mΩ at V_GS = 4.5 V. It fully enhances using standard 3.3 V or 5 V microcontroller outputs or gate drivers, making it suitable for direct interface without level shifters. The TPN14006NH,L1Q achieves 11 mΩ at V_GS = 10 V, offering headroom for improved efficiency in higher-drive systems.

What is the avalanche energy rating of TPN14006NH,L1Q and how is it tested?

The TPN14006NH,L1Q is rated for single-pulse avalanche energy E_AS = 43 mJ under conditions of V_DD ≈ 48 V, T_ch = 25 °C (initial), L = 0.2 mH, R_G = 1 Ω, and I_AR = 13 A. This rating is verified per JEDEC JESD24-11 and guarantees safe operation during inductive turn-off transients without device failure. The TPN14006NH,L1Q datasheet explicitly lists this value in Absolute Maximum Ratings Table 4.

Is TPN14006NH,L1Q suitable for synchronous rectification?

Yes, the TPN14006NH,L1Q is suitable for synchronous rectification due to its low R_DS(ON) = 11 mΩ and fast body diode with V_DSF = −1.2 V (typ.) at I_DR = 13 A. Its low Q_gd/Q_gs ratio improves controllability during zero-voltage switching transitions. However, external gate timing control is required to avoid shoot-through; the TPN14006NH,L1Q does not integrate drivers or protection logic.

What package type and thermal characteristics define TPN14006NH,L1Q's mounting requirements?

The TPN14006NH,L1Q uses the TSON Advance (TOSHIBA 2-3X1S) package: 3.0 × 3.0 × 0.85 mm with an exposed drain pad. Its R_th(ch-c) = 4.16 °C/W requires soldering the drain pad to ≥100 mm² of 2-oz copper with ≥6 thermal vias for rated 30 W dissipation. The TPN14006NH,L1Q datasheet Figure 5.1 defines the recommended land pattern and via placement for optimal thermal performance.

TPN14006NH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta), 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN14006NH,L1Q FAQ

1.How can I place an order for TPN14006NH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN14006NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN14006NH,L1Q reliable?

The price and inventory of TPN14006NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN14006NH,L1Q is usually 5 days.

3.What payment methods are accepted for TPN14006NH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN14006NH,L1Q transactions.

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4.How is shipping managed for TPN14006NH,L1Q?

TPN14006NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN14006NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN14006NH,L1Q?

For technical support, including TPN14006NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN14006NH,L1Q requirements.

6.How does Aetrix verify that TPN14006NH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPN14006NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN14006NH,L1Q meets industry standards.

7.What is the process for return or replacement of TPN14006NH,L1Q?

All TPN14006NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN14006NH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN14006NH,L1Q part is unused and in its original packaging.

Return procedure for TPN14006NH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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