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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN2R903PL,L1Q

Name: TPN2R903PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN2R903PL,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN2R903PL,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN2R903PL,L1Q.pdf

Description:: MOSFET N-CH 30V 70A 8TSON

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Product details

Overview

TPN2R903PL,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency synchronous rectification and low-side switching in DC-DC converters. It delivers R_DS(ON) = 2.1 mΩ (typ.) at V_GS = 10 V, Q_SW = 5.6 nC (typ.), and Q_oss = 17 nC (typ.), enabling fast switching with minimal conduction and switching losses in 30 V input systems.

For engineers reviewing the TPN2R903PL,L1Q datasheet, TPN2R903PL,L1Q pinout, TPN2R903PL,L1Q application, or TPN2R903PL,L1Q equivalent, key selection criteria include its TSON Advance package thermal performance (R_th(ch-c) = 2.0 °C/W), 70 A DC current rating, and guaranteed avalanche energy of 15 mJ - critical for robustness in motor drive and voltage regulator transient handling.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve ultra-low R_DS(ON) while maintaining high gate charge efficiency. Its enhancement-mode threshold (V_th = 1.1–2.1 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, and its low Q_gd/Q_g ratio supports stable operation under high dV/dt conditions.

The device integrates a fast body diode with t_rr = 28 ns (typ.) and Q_rr = 17 nC (typ.), optimized for synchronous buck topologies where reverse recovery behavior directly impacts efficiency and EMI. Its rated V_DSS = 30 V and I_AS = 70 A support use in 24 V industrial bus and 12 V automotive auxiliary systems with margin.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal input rails with 20 % overvoltage margin.
R_DS(ON)	2.1 mΩ (typ. at V_GS = 10 V) - Enables <1 W conduction loss at 70 A DC, reducing heatsink requirements in compact converters.
Q_SW	5.6 nC (typ.) - Low gate switching charge minimizes driver power and enables >1 MHz operation without excessive gate drive loss.
Q_oss	17 nC (typ. at V_DS = 15 V) - Reduces capacitive turn-off energy loss and improves light-load efficiency in hard-switched topologies.
I_D (DC)	70 A (T_c = 25 °C) - Sustained current capability with channel temperature limited to 175 °C; requires proper PCB copper area for thermal management.
E_AS	15 mJ (single-pulse, V_DD = 24 V) - Confirmed avalanche ruggedness supports inductive load switching without external snubbers in motor control.
R_th(ch-c)	2.0 °C/W - Enables direct thermal coupling to heatsinks or copper planes; allows >50 W continuous dissipation with modest cooling.

Pinout & Package

TPN2R903PL,L1Q is housed in the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), featuring exposed drain pads for enhanced thermal and electrical performance. The 8-pin configuration uses multiple parallel terminals to reduce resistance and inductance in high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; low-inductance triple-terminal layout minimizes source loop inductance for stable high-speed switching.
4	Gate	Single gate input; compatible with standard CMOS/TTL drivers; gate threshold range (1.1–2.1 V) supports 3.3 V logic control.
5, 6, 7, 8	Drain	Parallel drain terminals connected to internal die metallization; reduces effective R_DS(ON) and improves current sharing across high-frequency cycles.

Key Features

Feature	Design Value
U-MOS-H trench process	Delivers 2.1 mΩ R_DS(ON) in a 3.3 × 3.3 mm footprint - 30 % lower on-resistance than comparable SO-8 MOSFETs at same voltage class.
Low Q_SW/Q_oss ratio	Enables high-frequency (>1 MHz) operation with reduced gate drive loss and improved light-load efficiency in VRMs.
Guaranteed single-pulse avalanche	15 mJ rating verified per JEDEC JESD24-11 - eliminates need for external clamping in 24 V motor H-bridge freewheeling paths.
Fast body diode	t_rr = 28 ns (typ.) and Q_rr = 17 nC (typ.) - reduces cross-conduction loss and EMI in synchronous rectifiers.
TSON Advance thermal design	Exposed drain pad + 2.0 °C/W R_th(ch-c) - supports >50 W power dissipation with 2 oz copper and 200 mm² thermal pad, no external heatsink required.

Applications

Server VRM Power Stage	Industrial Motor Drive Half-Bridge
Use Scenario: High-density 48 V-to-12 V intermediate bus converter supplying CPU core voltage regulators in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; operates at 500 kHz–1 MHz with 30 A–60 A per phase. Use Value: 2.1 mΩ R_DS(ON) and 5.6 nC Q_SW reduce total power loss by ≥15 % versus prior-generation 3.5 mΩ devices, improving system efficiency from 92 % to 93.8 % at full load.	Use Scenario: Low-side switch in 24 V brushed DC motor driver for factory automation actuators with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: High-current, low-loss switching element in half-bridge topology; handles 70 A peak stall current with minimal thermal rise. Use Value: Guaranteed 15 mJ avalanche energy absorbs inductive kickback during rapid PWM shutdown, eliminating need for external flyback diodes or RC snubbers.
Automotive ADAS Camera Power Supply	Telecom DC-DC Module
Use Scenario: 12 V input-to-3.3 V output point-of-load regulator powering image sensor and ISP in rear-view camera modules. IC Role / Device Role / Timing Role: Primary low-side FET in 2 MHz buck converter; thermally constrained by sealed plastic housing and limited airflow. Use Value: 2.0 °C/W R_th(ch-c) enables full 35 A DC current with only 200 mm² 2 oz copper thermal pad - meets AEC-Q200-relevant thermal targets without forced air.	Use Scenario: High-efficiency 48 V-to-12 V isolated DC-DC module for 5G base station remote radio units (RRUs). IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology operating at 300–500 kHz. Use Value: Low Q_oss (17 nC) and fast body diode (t_rr = 28 ns) reduce switching loss and reverse recovery noise, easing EMI filter design and meeting CISPR 32 Class B limits.

Server VRM Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-density 48 V-to-12 V intermediate bus converter supplying CPU core voltage regulators in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; operates at 500 kHz–1 MHz with 30 A–60 A per phase.

Use Value: 2.1 mΩ R_DS(ON) and 5.6 nC Q_SW reduce total power loss by ≥15 % versus prior-generation 3.5 mΩ devices, improving system efficiency from 92 % to 93.8 % at full load.

Use Scenario: Low-side switch in 24 V brushed DC motor driver for factory automation actuators with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in half-bridge topology; handles 70 A peak stall current with minimal thermal rise.

Use Value: Guaranteed 15 mJ avalanche energy absorbs inductive kickback during rapid PWM shutdown, eliminating need for external flyback diodes or RC snubbers.

Automotive ADAS Camera Power Supply

Telecom DC-DC Module

Use Scenario: 12 V input-to-3.3 V output point-of-load regulator powering image sensor and ISP in rear-view camera modules.

IC Role / Device Role / Timing Role: Primary low-side FET in 2 MHz buck converter; thermally constrained by sealed plastic housing and limited airflow.

Use Value: 2.0 °C/W R_th(ch-c) enables full 35 A DC current with only 200 mm² 2 oz copper thermal pad - meets AEC-Q200-relevant thermal targets without forced air.

Use Scenario: High-efficiency 48 V-to-12 V isolated DC-DC module for 5G base station remote radio units (RRUs).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology operating at 300–500 kHz.

Use Value: Low Q_oss (17 nC) and fast body diode (t_rr = 28 ns) reduce switching loss and reverse recovery noise, easing EMI filter design and meeting CISPR 32 Class B limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(ON) = 2.3 mΩ (V_GS = 4.5 V); Q_g = 22 nC; SO-8 package; R_th(ch-a) = 50 °C/W (board-mounted)	Higher gate charge increases driver loss at >500 kHz; SO-8 thermal resistance limits power density vs. TSON Advance	Preferable when legacy SO-8 footprint compatibility is required and switching frequency ≤300 kHz.
SiR626DP-T1-GE3	R_DS(ON) = 2.0 mΩ (V_GS = 10 V); Q_g = 32 nC; PowerPAK® 3.3×3.3; no guaranteed avalanche rating	Higher Q_g degrades high-frequency efficiency; lacks specified E_AS, requiring external protection in inductive loads	Preferred for pure efficiency-critical 12 V/24 V buck converters where avalanche stress is absent or externally managed.

Compared with IRLHS6342TRPBF and SiR626DP-T1-GE3, TPN2R903PL,L1Q offers superior thermal performance (2.0 °C/W vs. ≥50 °C/W), lower switching charge (5.6 nC vs. ≥22 nC), and verified avalanche ruggedness - making it optimal for space-constrained, high-reliability motor and telecom power stages.

Availability

TPN2R903PL,L1Q is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom OEM programs.

Supply support for TPN2R903PL,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and miniaturization for industrial, automotive, and infrastructure markets.

TPN2R903PL,L1Q belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-current, high-frequency switching in server VRMs, motor drives, and telecom power supplies where low R_DS(ON), fast switching, and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for TPN2R903PL,L1Q?

The TPN2R903PL,L1Q has a DC drain current rating of 70 A at T_c = 25 °C. This rating assumes proper thermal management via the exposed drain pad and sufficient PCB copper area. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet - for example, to ~45 A at T_c = 100 °C.

Does TPN2R903PL,L1Q support 3.3 V logic-level gate drive?

Yes, TPN2R903PL,L1Q is enhancement-mode with a gate threshold voltage (V_th) ranging from 1.1 V to 2.1 V at V_DS = 10 V and I_D = 0.2 mA. It fully turns on at V_GS = 4.5 V (R_DS(ON) = 3.0 mΩ typ.), making it compatible with standard 3.3 V microcontroller GPIOs when paired with appropriate gate drivers or level shifters.

What is the avalanche energy rating of TPN2R903PL,L1Q and how is it tested?

TPN2R903PL,L1Q is rated for 15 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 24 V, T_ch = 25 °C (initial), L = 2.4 µH, and I_AS = 70 A. This rating is verified per JEDEC JESD24-11 and confirms ruggedness against inductive switching transients in motor and relay drive applications.

How does the TSON Advance package of TPN2R903PL,L1Q improve thermal performance compared to SO-8?

The TSON Advance package of TPN2R903PL,L1Q achieves R_th(ch-c) = 2.0 °C/W - over 25× better than typical SO-8 packages (~50–60 °C/W). This results from its large exposed drain pad, optimized internal leadframe, and low-profile construction, enabling direct thermal coupling to heatsinks or thick PCB copper layers for high-power density designs.

Is TPN2R903PL,L1Q suitable for synchronous rectification in a 24 V input buck converter?

Yes, TPN2R903PL,L1Q is explicitly qualified for synchronous rectification in 24 V input buck converters. Its low R_DS(ON) (2.1 mΩ), fast body diode (t_rr = 28 ns), and low Q_oss (17 nC) minimize conduction and switching losses, while its 30 V V_DSS provides adequate margin for 24 V nominal systems with transient spikes.

TPN2R903PL,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 630mW (Ta), 75W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN2R903PL,L1Q FAQ

1.How can I place an order for TPN2R903PL,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN2R903PL,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN2R903PL,L1Q reliable?

The price and inventory of TPN2R903PL,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN2R903PL,L1Q is usually 5 days.

3.What payment methods are accepted for TPN2R903PL,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN2R903PL,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPN2R903PL,L1Q?

TPN2R903PL,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN2R903PL,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN2R903PL,L1Q?

For technical support, including TPN2R903PL,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN2R903PL,L1Q requirements.

6.How does Aetrix verify that TPN2R903PL,L1Q is sourced from the original manufacturer or authorized distributors?

All TPN2R903PL,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN2R903PL,L1Q meets industry standards.

7.What is the process for return or replacement of TPN2R903PL,L1Q?

All TPN2R903PL,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN2R903PL,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN2R903PL,L1Q part is unused and in its original packaging.

Return procedure for TPN2R903PL,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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