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Toshiba Semiconductor and Storage TPN30008NH,LQ
- Part No.:
- TPN30008NH,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPN30008NH,LQ.pdf
- Description:
- MOSFET N-CH 80V 9.6A 8TSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,735
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Product details
Overview
TPN30008NH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers RDS(ON) = 25 mΩ (typ.) at VGS = 10 V, QSW = 4.1 nC (typ.), and VDSS = 80 V, enabling compact, low-loss power stage designs.
For engineers reviewing the TPN30008NH datasheet, TPN30008NH pinout, TPN30008NH application, or TPN30008NH equivalent, key selection criteria include its TSON Advance package thermal performance (Rth(ch-c) = 4.62 °C/W), gate threshold range (2.0–4.0 V), avalanche energy rating (EAS = 29 mJ), and verified suitability for 48 V industrial motor control and synchronous buck regulator topologies.
Technical Context
The TPN30008NH employs Toshiba's U-MOS-H trench-gate structure to achieve low conduction loss and fast switching with minimal gate charge. Its enhancement-mode operation and 80 V VDSS rating support use in 48 V bus systems, while the 22 A continuous drain current (Tc = 25 °C) enables high-current pulse handling up to 47 A.
Thermal design is supported by a low channel-to-case resistance (4.62 °C/W) and dual thermal resistance ratings for PCB-mounted conditions (65.7 °C/W and 178 °C/W). The device integrates an intrinsic body diode with VDSF = −1.2 V (typ.) at IDR = 9.6 A, suitable for freewheeling in synchronous rectification applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V nominal bus systems with 25 % headroom for transients |
| RDS(ON) | 25 mΩ (typ. at VGS = 10 V) - reduces conduction loss in high-current power stages |
| QSW | 4.1 nC (typ.) - enables high-frequency switching (>500 kHz) with low gate drive loss |
| ID (DC) | 22 A (Tc = 25 °C) - sustains continuous load current in thermally managed layouts |
| EAS | 29 mJ - provides single-pulse avalanche robustness during inductive turn-off stress |
| Vth | 2.0–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| Ciss | 710 pF (typ. at VDS = 40 V) - defines input capacitance for gate driver sizing and EMI filtering |
Pinout & Package
TPN30008NH is housed in the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), measuring 3.0 × 3.0 × 0.85 mm with a typical weight of 0.02 g. The package features exposed drain pads on the bottom side for enhanced thermal dissipation and mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET cells; tied to PCB ground plane for low-inductance return path |
| 4 | Gate | Control terminal requiring low-impedance gate driver; sensitive to ESD (±20 V absolute max) |
| 5, 6, 7, 8 | Drain | High-current output node; internally connected to exposed copper pad for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| U-MOS-H trench process | Enables simultaneous optimization of RDS(ON) and Qg, reducing both conduction and switching losses |
| TSON Advance package | Provides 4.62 °C/W channel-to-case thermal resistance and footprint compatibility with industry-standard 3×3 mm layouts |
| Low gate charge (QSW = 4.1 nC) | Reduces required gate drive power and allows use of smaller, lower-cost gate drivers |
| Enhancement-mode threshold (2.0–4.0 V) | Ensures safe off-state under zero-bias conditions and compatibility with 3.3 V microcontroller GPIOs |
| Body diode with VDSF = −1.2 V | Supports synchronous rectification without external Schottky diodes in buck converters |
Applications
| DC-DC Converters | Switching Voltage Regulators |
|---|---|
Use Scenario: High-density 48 V to 12 V step-down converter in telecom power supplies. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 300–600 kHz. Use Value: Low RDS(ON) and QSW minimize total power loss, enabling >95 % efficiency at 15 A output. | Use Scenario: Point-of-load (POL) regulator for FPGA core voltage in industrial controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery. Use Value: VDSF = −1.2 V and low Coss reduce reverse recovery loss and improve light-load efficiency. |
| Motor Drivers | Industrial Power Supplies |
Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor control for HVAC fans. IC Role / Device Role / Timing Role: Low-side switch with 47 A pulsed current capability for PWM commutation. Use Value: Avalanche-rated EAS = 29 mJ withstands inductive kickback without snubbers. | Use Scenario: Secondary-side synchronous rectifier in isolated 48 V AC/DC adapter for factory automation. IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter with ZVS operation. Use Value: Low Ciss and Crss enable clean switching transitions and reduced EMI generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(ON) = 23 mΩ (VGS = 10 V); Qg = 13.5 nC; SO-8FL package | Higher gate charge increases driver loss; larger SO-8FL footprint vs. TSON Advance | Preferred when higher current derating margin is needed over thermal density |
| IRF7470PBF | RDS(ON) = 28 mΩ; Qg = 11.5 nC; SO-8 package; VDSS = 75 V | Lower breakdown voltage limits use in 48 V systems with high transient margins | Consider only where 75 V rating suffices and legacy SO-8 layout reuse is critical |
Compared with SiR872DP-T1-GE3 and IRF7470PBF, the TPN30008NH offers superior thermal density (0.02 g, 3×3 mm), lowest QSW (4.1 nC), and highest VDSS/RDS(ON) ratio-making it optimal for space-constrained, high-frequency 48 V power stages where gate drive efficiency and avalanche ruggedness are prioritized.
Availability
TPN30008NH is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial switching regulators requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for TPN30008NH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET design and manufacturing.
The TPN series targets high-efficiency, high-reliability power conversion applications, with the TPN30008NH specifically engineered for compact, high-frequency switching in 48 V industrial and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for TPN30008NH?
The TPN30008NH has a maximum continuous drain current (ID) of 22 A at case temperature Tc = 25 °C. This rating assumes proper PCB thermal management via the exposed drain pad. At higher case temperatures or ambient conditions, derating per the Rth(ch-c) = 4.62 °C/W specification is required. The TPN30008NH also supports 47 A pulsed drain current (IDP) for short durations (t = 1 ms).
Does TPN30008NH support logic-level gate drive?
Yes, the TPN30008NH is an enhancement-mode MOSFET with a gate threshold voltage (Vth) ranging from 2.0 V to 4.0 V, making it compatible with standard 3.3 V and 5 V logic-level gate drivers. Full enhancement occurs at VGS = 10 V, where RDS(ON) reaches its specified 25 mΩ (typ.). For robust operation, gate drive should remain within ±20 V absolute maximum ratings.
What is the thermal resistance from channel to case for TPN30008NH?
The TPN30008NH has a channel-to-case thermal resistance (Rth(ch-c)) of 4.62 °C/W, measured under Tc = 25 °C conditions. This low value reflects the efficient thermal path from the silicon die to the exposed drain pad in the TSON Advance package. Engineers must ensure adequate copper area and thermal vias beneath the drain terminals to realize this performance in actual PCB layouts.
Is TPN30008NH suitable for synchronous rectification?
Yes, the TPN30008NH is well-suited for synchronous rectification due to its integrated body diode with forward voltage VDSF = −1.2 V (typ.) at IDR = 9.6 A and low reverse recovery charge. Its low RDS(ON) and fast switching characteristics (tr = 3.8 ns, tf = 3.6 ns) allow it to replace Schottky diodes in buck and LLC converters, improving efficiency-especially at light loads-without requiring external diode clamping.
What package type does TPN30008NH use, and how many pins does it have?
The TPN30008NH uses the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), which is an 8-pin, 3.0 × 3.0 × 0.85 mm leadless package with an exposed drain pad. Pins 1–3 are Source, Pin 4 is Gate, and Pins 5–8 connect to the Drain terminal and the thermal pad. This configuration enables high current handling and low thermal resistance in space-constrained designs.
TPN30008NH,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 920 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta), 27W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSON Advance (3.3x3.3)
TPN30008NH,LQ FAQ
1.How can I place an order for TPN30008NH,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TPN30008NH,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPN30008NH,LQ reliable?
The price and inventory of TPN30008NH,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN30008NH,LQ is usually 5 days.
3.What payment methods are accepted for TPN30008NH,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN30008NH,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPN30008NH,LQ?
TPN30008NH,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPN30008NH,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPN30008NH,LQ?
For technical support, including TPN30008NH,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN30008NH,LQ requirements.
6.How does Aetrix verify that TPN30008NH,LQ is sourced from the original manufacturer or authorized distributors?
All TPN30008NH,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN30008NH,LQ meets industry standards.
7.What is the process for return or replacement of TPN30008NH,LQ?
All TPN30008NH,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPN30008NH,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPN30008NH,LQ part is unused and in its original packaging.
Return procedure for TPN30008NH,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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