My Inquiry
My Account
Toshiba Semiconductor and Storage TPN5900CNH,L1Q
- Part No.:
- TPN5900CNH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPN5900CNH,L1Q.pdf
- Description:
- MOSFET N-CH 150V 9A 8TSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,036
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPN5900CNH,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-frequency switching in DC-DC converters and voltage regulators. It delivers RDS(ON) = 50 mΩ (typ.) at VGS = 10 V, QSW = 2.6 nC (typ.), and VDSS = 150 V, enabling efficient 12–48 V input power stages.
For engineers reviewing the TPN5900CNH,L1Q datasheet, TPN5900CNH,L1Q pinout, TPN5900CNH,L1Q application, or TPN5900CNH,L1Q equivalent, key selection criteria include its TSON Advance package thermal performance (Rth(ch-c) = 3.20 °C/W), low gate charge for fast switching, and guaranteed avalanche energy of 37 mJ under defined test conditions.
Technical Context
The TPN5900CNH,L1Q uses Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and fast switching with minimal gate drive loss. Its enhancement-mode threshold (Vth = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers.
Designed for hard-switched topologies, it supports continuous drain current up to 18 A (Tc = 25 °C) and pulsed current up to 35 A, with validated safe operating area (SOA) curves up to 100 µs. Its Ciss = 460 pF (typ.) and Crss = 3.0 pF (typ.) support stable operation in synchronous buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Supports 48 V bus designs with ≥3× voltage margin against transients |
| RDS(ON) | 50 mΩ (typ.) at VGS = 10 V - Enables <1 W conduction loss at 4.5 A DC output |
| QSW | 2.6 nC (typ.) - Reduces gate drive power and enables >1 MHz switching without excessive driver heating |
| EAS | 37 mJ - Withstands single-pulse inductive energy during overcurrent or short-circuit events |
| Rth(ch-c) | 3.20 °C/W - Allows 39 W power dissipation with ≤125 °C channel-to-case temperature rise |
| ID (DC) | 18 A (Tc = 25 °C) - Sustains full-load current in compact heatsink-limited PCB layouts |
| Vth | 2.0–4.0 V - Compatible with 3.3 V and 5 V microcontroller GPIO or dedicated gate drivers |
Pinout & Package
TPN5900CNH,L1Q is housed in the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), measuring 3.0 × 3.0 × 0.85 mm with exposed drain pad for thermal enhancement. The package weighs 0.02 g (typ.) and features a thermally optimized leadframe design.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel cells; connects directly to PCB ground plane for low-inductance return path |
| 4 | Gate | Control terminal requiring <2.6 nC total charge for full enhancement; sensitive to ESD (±20 V rating) |
| 5, 6, 7, 8 | Drain | High-current drain terminals tied to exposed metal pad; provides primary thermal conduction path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| U-MOS-H trench process | Enables 50 mΩ RDS(ON) in 3×3 mm footprint while maintaining 150 V breakdown integrity |
| Low QSW/Qgd ratio | Qgd = 1.5 nC (typ.) / QSW = 2.6 nC → 58% ratio improves Miller immunity and dV/dt ruggedness |
| Guaranteed avalanche capability | Single-pulse EAS = 37 mJ (VDD = 60 V, IAR = 9.0 A) supports unclamped inductive switching reliability |
| Thermally enhanced TSON Advance | Exposed drain pad + 3.20 °C/W Rth(ch-c) enables higher power density than standard SO-8 or SOP-8 packages |
Applications
| Server VRM Power Stage | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-efficiency, multi-phase buck converter supplying CPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500 kHz–1 MHz switching topology. Use Value: 50 mΩ RDS(ON) and 2.6 nC QSW reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy 80 mΩ devices. | Use Scenario: Isolated or non-isolated step-down converter powering PLC I/O modules from 48 V industrial bus. IC Role / Device Role / Timing Role: Primary switch in fixed-frequency PWM controller-based regulator. Use Value: 150 V VDSS and 37 mJ EAS ensure robustness against 48 V bus transients and inductive kickback in factory environments. |
| Telecom PoE++ PSE Switch | Automotive ADAS Camera Power Supply |
Use Scenario: Power sourcing equipment delivering up to 90 W per port in IEEE 802.3bt Type 4 systems. IC Role / Device Role / Timing Role: Hot-swap FET and DC-DC primary switch in dual-stage power architecture. Use Value: Low IDSS (≤10 µA at 150 V) minimizes standby leakage across multiple ports, preserving system quiescent current budget. | Use Scenario: Compact 12 V–3.3 V/2 A power supply for CMOS image sensor and ISP in automotive rear-view camera module. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter. Use Value: TSON Advance package allows <10 mm² board area with Rth(ch-a) = 65.7 °C/W (board a), meeting AEC-Q200 ambient temperature requirements without external heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD50N04S4L-05 | RDS(ON) = 4.5 mΩ @ 10 V, VDSS = 40 V - lower voltage rating, higher current capacity | Not suitable for 48 V+ systems; limited to ≤36 V input rails | Select only when target input voltage is ≤36 V and RDS(ON) reduction is critical for <100 W loads |
| SiR626DP | RDS(ON) = 52 mΩ @ 10 V, VDSS = 150 V, Qg = 10.5 nC - higher gate charge, same voltage class | Slower switching due to 4× higher Qg; increases driver loss and limits frequency scalability | Prefer when thermal margin is abundant but cost is constrained, and switching frequency ≤300 kHz |
Compared with IPD50N04S4L-05 and SiR626DP, the TPN5900CNH,L1Q uniquely balances 150 V rating, ultra-low QSW, and compact TSON Advance packaging-making it optimal for space-constrained, high-frequency 48 V power conversion where both voltage margin and switching efficiency are critical.
Availability
TPN5900CNH,L1Q is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom PoE++ power sourcing equipment requiring stable component supply and long-term manufacturability.
Supply support for TPN5900CNH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, reliability, and miniaturization.
The TPN5900CNH,L1Q belongs to Toshiba's U-MOS-H high-voltage MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained infrastructure and industrial applications.
FAQ
What is the maximum continuous drain current rating for TPN5900CNH,L1Q at 25°C case temperature?
The TPN5900CNH,L1Q has a maximum continuous drain current (ID) rating of 18 A when the case temperature (Tc) is maintained at 25°C. This rating assumes proper PCB copper area for heat spreading and is derived from the device's 39 W power dissipation limit and 3.20 °C/W channel-to-case thermal resistance. At elevated case temperatures, derating applies per the PD–Tc curve in the official datasheet.
Does TPN5900CNH,L1Q support logic-level gate drive?
Yes, the TPN5900CNH,L1Q supports logic-level gate drive with a gate threshold voltage (Vth) range of 2.0–4.0 V at VDS = 10 V and ID = 0.2 mA. It achieves full enhancement and specified RDS(ON) at VGS = 10 V, but also delivers usable on-resistance (though higher than typical) at VGS = 4.5 V, making it compatible with 3.3 V and 5 V microcontroller outputs when paired with appropriate gate buffering.
What is the significance of the "TSON Advance" package used by TPN5900CNH,L1Q?
The TSON Advance package (TOSHIBA designation: 2-3X1S) is a thermally enhanced surface-mount variant of the TSON family, featuring an exposed drain pad that serves as the primary thermal conduction path. For the TPN5900CNH,L1Q, this yields Rth(ch-c) = 3.20 °C/W-significantly better than standard SO-8 or SOP-8 packages-and enables higher power density in compact DC-DC designs without requiring additional heatsinking.
Is TPN5900CNH,L1Q suitable for avalanche-prone circuits like inductive load switching?
Yes, the TPN5900CNH,L1Q is rated for single-pulse avalanche energy (EAS) of 37 mJ under defined test conditions (VDD ≈ 60 V, IAR = 9.0 A, Tch = 25°C). This specification validates its ability to safely absorb inductive energy during unclamped inductive switching events, such as those occurring in relay drivers or motor gate control-provided layout minimizes stray inductance and thermal limits are observed.
How does the gate charge profile of TPN5900CNH,L1Q impact high-frequency operation?
The TPN5900CNH,L1Q features a total gate charge (Qg) of 7.0 nC (typ.) and a gate switch charge (QSW) of 2.6 nC (typ.), enabling efficient high-frequency operation. Its low QSW reduces gate driver power loss and allows clean, fast transitions even with modest 4.7 Ω gate resistors, supporting stable switching up to 1 MHz in well-designed buck converters without excessive gate drive heating or shoot-through risk.
TPN5900CNH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 59mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta), 39W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSON Advance (3.1x3.1)
TPN5900CNH,L1Q FAQ
1.How can I place an order for TPN5900CNH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPN5900CNH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPN5900CNH,L1Q reliable?
The price and inventory of TPN5900CNH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN5900CNH,L1Q is usually 5 days.
3.What payment methods are accepted for TPN5900CNH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN5900CNH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPN5900CNH,L1Q?
TPN5900CNH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPN5900CNH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPN5900CNH,L1Q?
For technical support, including TPN5900CNH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN5900CNH,L1Q requirements.
6.How does Aetrix verify that TPN5900CNH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPN5900CNH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN5900CNH,L1Q meets industry standards.
7.What is the process for return or replacement of TPN5900CNH,L1Q?
All TPN5900CNH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN5900CNH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPN5900CNH,L1Q part is unused and in its original packaging.
Return procedure for TPN5900CNH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPN5900CNH,L1Q Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
