Toshiba Semiconductor and Storage TPN6R003NL,LQ

Overview

TPN6R003NL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency synchronous rectification and low-side switching in DC-DC converters. It delivers R_DS(ON) = 6.8 mΩ (typ.) at V_GS = 4.5 V, Q_SW = 4.3 nC (typ.), and supports I_D = 56 A (DC) with 30 V V_DSS, enabling compact, high-frequency power stages in server VRMs and POL converters.

For engineers reviewing the TPN6R003NL datasheet, TPN6R003NL pinout, TPN6R003NL application, or TPN6R003NL equivalent, key selection criteria include its TSON Advance package thermal performance (R_th(ch-c) = 3.9 °C/W), gate charge profile for PWM efficiency, and verified operation under 100 kHz–1 MHz switching in buck topologies with 12–24 V input rails.

Technical Context

The TPN6R003NL employs Toshiba's U-MOS-H trench-gate structure to minimize conduction and switching losses simultaneously. Its enhancement-mode threshold (V_th = 1.3–2.3 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level drivers, while low C_iss = 1050 pF (typ.) and C_rss = 37 pF (typ.) support fast, low-noise switching transitions.

Thermal design leverages the TSON Advance package's exposed drain pad (pins 5–8) for direct heat transfer to PCB copper. With R_th(ch-a) = 65.7 °C/W on standard FR-4 (t = 10 s), it sustains continuous operation up to T_ch = 150 °C when mounted per Figure 5.1 layout guidelines.

Key Specifications

Pinout & Package

TPN6R003NL uses the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), featuring an exposed drain thermal pad and 8-pin configuration optimized for low-inductance, high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and SiR872DP-T1-GE3, the TPN6R003NL offers the lowest Q_SW/R_DS(ON) ratio (0.63 nC/mΩ), making it optimal for high-frequency, medium-current applications where switching loss reduction outweighs marginal R_DS(ON) gains.

Availability

TPN6R003NL is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC-DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for TPN6R003NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on energy efficiency, reliability, and industrial-grade performance.

The TPN6R003NL belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for TPN6R003NL at 100 °C case temperature?

The TPN6R003NL supports I_D = 27 A (DC) at T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value accounts for thermal resistance and safe channel temperature limits, ensuring reliable operation without exceeding T_ch = 150 °C under sustained load conditions. Designers must verify PCB copper area and airflow to maintain T_c ≤ 100 °C when using the TPN6R003NL in thermally constrained layouts.

Does TPN6R003NL support 3.3 V logic-level gate drive?

Yes, the TPN6R003NL is fully compatible with 3.3 V logic-level gate drive due to its enhancement-mode threshold voltage range of 1.3–2.3 V (V_DS = 10 V, I_D = 0.2 mA). At V_GS = 3.3 V, it achieves R_DS(ON) ≤ 8.3 mΩ (max), enabling robust conduction without external level shifters. This makes the TPN6R003NL suitable for direct interfacing with FPGA I/O banks and ARM-based microcontrollers in space-constrained TSON Advance layouts.

What is the avalanche energy rating of TPN6R003NL and how is it tested?

The TPN6R003NL has a single-pulse avalanche energy rating E_AS = 39 mJ, measured under conditions of V_DD = 24 V, T_ch = 25 °C (initial), L = 42 µH, and I_AR = 27 A. This rating reflects its ability to absorb transient inductive energy without failure during unclamped inductive switching events. The TPN6R003NL is not rated for repetitive avalanche operation, and system designers must implement snubbers or clamp circuits to avoid repeated stress beyond this single-pulse limit.

How does the TSON Advance package of TPN6R003NL improve thermal performance compared to standard SO-8?

The TSON Advance package used by the TPN6R003NL features an enlarged exposed drain pad covering pins 5–8, reducing R_th(ch-c) to 3.9 °C/W - 40 % lower than typical SO-8 MOSFETs. Its 2-3X1S footprint allows wider copper connections and lower thermal impedance to inner-layer planes. Unlike SO-8, the TSON Advance eliminates leadframe thermal bottlenecks, enabling the TPN6R003NL to dissipate >25 W continuously when properly mounted on 2 oz copper with thermal vias.

Is TPN6R003NL suitable for automotive applications per AEC-Q101?

No, the TPN6R003NL is not qualified to AEC-Q101. Toshiba specifies it for industrial and computing applications only, with storage temperature ranging from –55 °C to +150 °C but no automotive qualification testing or traceability documentation. For automotive ADAS or body control modules, designers should select AEC-Q101–qualified alternatives such as the TK8P60W or similar, and must not substitute the TPN6R003NL into safety-critical automotive systems without full requalification.