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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN6R303NC,LQ

Name: TPN6R303NC,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN6R303NC,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN6R303NC,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN6R303NC,LQ.pdf

Description:: MOSFET N CH 30V 20A 8TSON-ADV

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Product details

Overview

TPN6R303NC from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in TSON Advance package, designed for high-efficiency power management switches and lithium-ion battery protection circuits. It delivers R_DS(ON) = 5.2 mΩ (typ., V_GS = 10 V), 30 V V_DSS, and 43 A continuous drain current at T_c = 25 °C - enabling low-conduction-loss switching in compact portable power systems.

For engineers reviewing the TPN6R303NC datasheet, TPN6R303NC pinout, TPN6R303NC application, or TPN6R303NC equivalent, key selection criteria include its 5.2 mΩ on-resistance at 10 V gate drive, 1.3–2.3 V gate threshold range, TSON Advance thermal performance (R_th(ch-c) = 6.57 °C/W), and validated use in battery overcurrent protection and DC-DC converter high-side switching.

Technical Context

The TPN6R303NC employs U-MOS trench-gate structure to achieve low R_DS(ON) and fast switching with Q_g = 24 nC (V_DD ≈ 24 V, I_D = 20 A). Its enhancement-mode operation (V_th = 1.3–2.3 V) ensures reliable turn-on with standard logic-level gate drivers.

Thermally optimized for surface-mount applications, it features a 3-pin source / 4-pin drain configuration in the TSON Advance (2-3X1S) package, supporting high-current density mounting on FR-4 PCBs with R_th(ch-a) = 65.7 °C/W (t = 10 s, board type a) and single-pulse avalanche energy rating of 51 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - supports 24 V nominal bus systems with margin for transients
R_DS(ON) (V_GS = 10 V)	5.2 mΩ (typ.) - enables ≤0.5 W conduction loss at 10 A continuous current
I_D (DC, T_c = 25 °C)	43 A - suitable for high-current load switching without external heatsink
V_th	1.3–2.3 V - compatible with 3.3 V and 5 V microcontroller GPIO drive
Q_g	24 nC (typ.) - determines gate driver strength requirement for <15 ns turn-on time
E_AS	51 mJ - provides robustness against inductive switching surges in DC-DC converters
C_iss	1370 pF (typ.) - impacts gate drive loop stability and EMI filtering design

Pinout & Package

TSON Advance (2-3X1S) package: 3.3 mm × 3.0 mm × 0.85 mm, 8-pin leadless surface-mount with exposed drain pad for thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for channel current; electrically tied internally
4	Gate	Control terminal requiring low-impedance drive due to 24 nC total gate charge
5, 6, 7, 8	Drain	Main power output node; connected to exposed thermal pad for heat transfer to PCB

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	5.2 mΩ typ. at V_GS = 10 V reduces I²R losses in high-current battery paths
TSON Advance package	3.3 × 3.0 mm footprint with thermal pad enables high-power density in space-constrained designs
Low gate threshold	V_th = 1.3–2.3 V allows direct interface with 3.3 V MCU outputs without level-shifting
High avalanche ruggedness	51 mJ single-pulse rating protects against inductive kickback in motor or solenoid drives
Low leakage	I_DSS ≤ 10 µA at V_DS = 30 V minimizes standby power loss in always-on battery systems

Applications

Lithium-Ion Battery Protection	Power Management Switch
Use Scenario: Overcurrent and short-circuit protection in 2–4 cell Li-ion packs for power tools and portable medical devices. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled by protection IC to interrupt fault current within microseconds. Use Value: 5.2 mΩ R_DS(ON) limits voltage drop across FET during normal operation, preserving pack runtime and reducing thermal stress.	Use Scenario: Load switching in USB-C PD power delivery modules and industrial PMICs. IC Role / Device Role / Timing Role: Main power path switch enabling/disabling downstream rails under firmware control. Use Value: Low 24 nC Q_g and fast 14 ns rise time support efficient PWM dimming and dynamic load regulation.
DC-DC Converter High-Side Switch	Hot-Swap Controller Output Stage
Use Scenario: Synchronous rectification in buck converters for telecom base station power supplies. IC Role / Device Role / Timing Role: High-frequency switching element operating at 300–500 kHz with gate drive synchronized to controller. Use Value: 1370 pF C_iss and 110 pF Crss enable stable gate drive loop design with minimal ringing at 500 kHz.	Use Scenario: Inrush current limiting and fault isolation in enterprise server backplanes. IC Role / Device Role / Timing Role: Controlled turn-on switch managed by hot-swap controller to limit dI/dt during board insertion. Use Value: 1.3–2.3 V V_th range ensures predictable turn-on timing across temperature and process variation.

Lithium-Ion Battery Protection

Power Management Switch

Use Scenario: Overcurrent and short-circuit protection in 2–4 cell Li-ion packs for power tools and portable medical devices.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled by protection IC to interrupt fault current within microseconds.

Use Value: 5.2 mΩ R_DS(ON) limits voltage drop across FET during normal operation, preserving pack runtime and reducing thermal stress.

Use Scenario: Load switching in USB-C PD power delivery modules and industrial PMICs.

IC Role / Device Role / Timing Role: Main power path switch enabling/disabling downstream rails under firmware control.

Use Value: Low 24 nC Q_g and fast 14 ns rise time support efficient PWM dimming and dynamic load regulation.

DC-DC Converter High-Side Switch

Hot-Swap Controller Output Stage

Use Scenario: Synchronous rectification in buck converters for telecom base station power supplies.

IC Role / Device Role / Timing Role: High-frequency switching element operating at 300–500 kHz with gate drive synchronized to controller.

Use Value: 1370 pF C_iss and 110 pF Crss enable stable gate drive loop design with minimal ringing at 500 kHz.

Use Scenario: Inrush current limiting and fault isolation in enterprise server backplanes.

IC Role / Device Role / Timing Role: Controlled turn-on switch managed by hot-swap controller to limit dI/dt during board insertion.

Use Value: 1.3–2.3 V V_th range ensures predictable turn-on timing across temperature and process variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-E3	R_DS(ON) = 65 mΩ (V_GS = 4.5 V); SOT-23 package; lower current rating (3 A)	Suitable only for low-power signal switching, not battery main-switching	Select when board space is critical and current < 5 A; not a functional replacement for TPN6R303NC
DMN3025LSD-13	R_DS(ON) = 2.5 mΩ (V_GS = 10 V); PowerDI3333 package; higher thermal resistance (R_th(ch-a) = 90 °C/W)	Better conduction loss but inferior thermal performance on standard PCBs	Prefer for ultra-low-loss requirements where heatsinking is available; requires layout revision

Compared with Si2302DS-T1-E3 and DMN3025LSD-13, the TPN6R303NC offers optimal balance of low R_DS(ON), compact TSON Advance footprint, and proven thermal behavior on FR-4 - making it preferred for mid-power battery and DC-DC applications where board area and thermal reliability are jointly constrained.

Availability

TPN6R303NC is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switches, and DC-DC converter high-side switching requiring stable component supply and long-term production continuity.

Supply support for TPN6R303NC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, miniaturization, and reliability.

The TPN6R303NC belongs to Toshiba's U-MOS series of low-R_DS(ON) N-channel MOSFETs, engineered specifically for high-current, low-voltage power switching in portable and industrial battery-powered systems.

FAQ

What is the maximum continuous drain current for the TPN6R303NC at 70 °C case temperature?

The TPN6R303NC supports 20 A continuous drain current at T_c = 70 °C (per Absolute Maximum Ratings table, "Drain current (DC)" row, t = 10 s condition). This derating reflects thermal limitations of the TSON Advance package on standard PCBs and must be verified against actual board layout and ambient conditions. The TPN6R303NC datasheet specifies 43 A only at T_c = 25 °C.

Does the TPN6R303NC have integrated ESD protection?

The TPN6R303NC does not include integrated ESD protection circuitry. The datasheet explicitly warns that the device is sensitive to electrostatic discharge and must be handled using standard ESD precautions (e.g., grounded workstations, anti-static packaging). System-level ESD protection must be implemented externally if required by end-application standards.

Can the TPN6R303NC be driven directly by a 3.3 V microcontroller GPIO?

Yes - the TPN6R303NC has a gate threshold voltage range of 1.3–2.3 V, so it will turn on with 3.3 V gate drive. However, full enhancement (to achieve rated R_DS(ON)) requires V_GS ≥ 4.5 V. At 3.3 V, R_DS(ON) rises to ~6.3 mΩ (max), increasing conduction loss. For optimal efficiency, a dedicated gate driver or level shifter is recommended.

What is the safe operating area (SOA) limitation for the TPN6R303NC in linear mode?

The TPN6R303NC SOA is defined in Figure 8.14 of its datasheet and is limited by both thermal and avalanche constraints. In DC linear operation, the device is restricted to ≤10 A at V_DS = 10 V (T_c = 25 °C), decreasing with rising temperature. Linear-mode use is not recommended without active thermal monitoring, as the TPN6R303NC is optimized for switching, not analog operation.

Is the TPN6R303NC RoHS-compliant and halogen-free?

Yes - the TPN6R303NC meets RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation. The device carries the "E" suffix designation for halogen-free construction and is marked accordingly on the package per Toshiba's marking specification in Figure 7.1 of the TPN6R303NC datasheet.

TPN6R303NC,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1370 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta), 19W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN6R303NC,LQ FAQ

1.How can I place an order for TPN6R303NC,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN6R303NC,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN6R303NC,LQ reliable?

The price and inventory of TPN6R303NC,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN6R303NC,LQ is usually 5 days.

3.What payment methods are accepted for TPN6R303NC,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN6R303NC,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPN6R303NC,LQ?

TPN6R303NC,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN6R303NC,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN6R303NC,LQ?

For technical support, including TPN6R303NC,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN6R303NC,LQ requirements.

6.How does Aetrix verify that TPN6R303NC,LQ is sourced from the original manufacturer or authorized distributors?

All TPN6R303NC,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN6R303NC,LQ meets industry standards.

7.What is the process for return or replacement of TPN6R303NC,LQ?

All TPN6R303NC,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPN6R303NC,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN6R303NC,LQ part is unused and in its original packaging.

Return procedure for TPN6R303NC,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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