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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN7R006PL,L1Q

Name: TPN7R006PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN7R006PL,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN7R006PL,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN7R006PL,L1Q.pdf

Description:: MOSFET N-CH 60V 54A 8TSON

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Product details

Overview

TPN7R006PL,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed as a high-efficiency synchronous rectifier or main switch in DC-DC converters. It delivers R_DS(ON) = 5.4 mΩ (typ.) at V_GS = 10 V, Q_SW = 6.8 nC (typ.), and supports 54 A DC drain current with 60 V V_DSS, targeting compact, high-frequency switching regulators.

For engineers reviewing the TPN7R006PL,L1Q datasheet, TPN7R006PL,L1Q pinout, TPN7R006PL,L1Q application, or TPN7R006PL,L1Q equivalent, key selection criteria include low gate charge for fast switching, low R_DS(ON) for conduction loss reduction, thermal resistance (R_th(ch-c) = 2.0 °C/W), and TSON Advance package compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve enhanced cell density and reduced specific on-resistance. Its enhancement-mode operation (V_th = 1.5–2.5 V) enables direct drive from standard logic-level controllers, while low Q_oss = 20 nC (typ.) minimizes turn-off energy loss during hard-switching transitions.

The device integrates a robust body diode with t_rr = 22 ns (typ.) and Q_rr = 170 nC (max), supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Absolute maximum ratings include 60 V V_DSS, 54 A I_D (DC), and 175 °C channel temperature limit-validated under Tc = 25 °C mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; defines usable input range in 48 V bus applications.
R_DS(ON)	5.4 mΩ (typ.) at V_GS = 10 V - Enables <1.5 W conduction loss at 27 A, critical for thermally constrained DC-DC stages.
Q_SW	6.8 nC (typ.) - Low total gate charge reduces driver power and enables >1 MHz switching without excessive gate loss.
C_iss	1440 pF (typ.) - Input capacitance impacts gate drive loop stability and EMI filter design in high-frequency converters.
R_th(ch-c)	2.0 °C/W - Channel-to-case thermal resistance allows direct heatsinking via exposed drain pad for 170 W P_D dissipation.
I_D (DC)	54 A - Continuous drain current rating at T_c = 25 °C; derates per R_th(ch-a) = 56 °C/W on standard FR-4 board.
V_th	1.5–2.5 V - Gate threshold range ensures reliable turn-on with 3.3 V or 5 V logic drivers without level-shifting.

Pinout & Package

TPN7R006PL,L1Q uses the TSON Advance surface-mount package (TOSHIBA designation: 2-3X1S), featuring an exposed drain pad for thermal and electrical performance. The 8-pin configuration supports high-current routing with dual-source and quad-drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel cells; low-inductance path to ground plane.
4	Gate	Control terminal requiring <6.8 nC charge; sensitive to ESD-requires gate resistor and TVS protection.
5, 6, 7, 8	Drain	High-current output node tied to exposed copper pad; handles full 54 A DC with minimal thermal resistance.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 5.4 mΩ R_DS(ON) in TSON Advance footprint-reducing die size and cost vs. planar alternatives.
Low Q_SW / Q_oss	6.8 nC / 20 nC values minimize switching losses in 500 kHz–2 MHz DC-DC converters, improving efficiency by 1–2%.
Enhancement-mode V_th	1.5–2.5 V threshold ensures safe default-OFF behavior and compatibility with PWM controllers like TI UCC28950 or ON Semi NCP1562.
Robust body diode	t_rr = 22 ns and Q_rr = 170 nC support synchronous rectification without external Schottky replacement in mid-power buck stages.

Applications

Server VRM Power Stage	Industrial 48 V Buck Converter
Use Scenario: High-current, multi-phase voltage regulator module supplying CPU/GPU cores from 48 V intermediate bus. IC Role / Device Role: Primary high-side switch operating at 500 kHz–1 MHz with synchronous rectification. Use Value: 5.4 mΩ R_DS(ON) and 6.8 nC Q_SW reduce conduction + switching losses, enabling >95% peak efficiency at 100 A load.	Use Scenario: Isolated or non-isolated step-down converter powering PLC I/O modules or motor drives from industrial 48 V supply. IC Role / Device Role: Main switching FET in continuous conduction mode (CCM) buck topology. Use Value: 60 V V_DSS margin accommodates 48 V transients; TSON Advance package enables compact layout with low thermal impedance.
Telecom DC-DC Brick	Automotive ADAS Power Supply
Use Scenario: Compact 50–100 W quarter-brick DC-DC module converting -48 V telecom input to 12 V/5 V outputs. IC Role / Device Role: Secondary-side synchronous rectifier in forward or LLC resonant converter. Use Value: Low Q_oss = 20 nC and fast t_rr = 22 ns minimize reverse recovery loss, improving light-load efficiency.	Use Scenario: Power management unit supplying radar sensor or camera ECU from 12 V battery with strict thermal constraints. IC Role / Device Role: High-efficiency buck controller switch in AEC-Q101-compliant design (note: TPN7R006PL,L1Q is not AEC-Q101 qualified). Use Value: R_th(ch-c) = 2.0 °C/W enables direct heatsink attachment, maintaining <125 °C junction temp at 30 A continuous.

Server VRM Power Stage

Industrial 48 V Buck Converter

Use Scenario: High-current, multi-phase voltage regulator module supplying CPU/GPU cores from 48 V intermediate bus.

IC Role / Device Role: Primary high-side switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: 5.4 mΩ R_DS(ON) and 6.8 nC Q_SW reduce conduction + switching losses, enabling >95% peak efficiency at 100 A load.

Use Scenario: Isolated or non-isolated step-down converter powering PLC I/O modules or motor drives from industrial 48 V supply.

IC Role / Device Role: Main switching FET in continuous conduction mode (CCM) buck topology.

Use Value: 60 V V_DSS margin accommodates 48 V transients; TSON Advance package enables compact layout with low thermal impedance.

Telecom DC-DC Brick

Automotive ADAS Power Supply

Use Scenario: Compact 50–100 W quarter-brick DC-DC module converting -48 V telecom input to 12 V/5 V outputs.

IC Role / Device Role: Secondary-side synchronous rectifier in forward or LLC resonant converter.

Use Value: Low Q_oss = 20 nC and fast t_rr = 22 ns minimize reverse recovery loss, improving light-load efficiency.

Use Scenario: Power management unit supplying radar sensor or camera ECU from 12 V battery with strict thermal constraints.

IC Role / Device Role: High-efficiency buck controller switch in AEC-Q101-compliant design (note: TPN7R006PL,L1Q is not AEC-Q101 qualified).

Use Value: R_th(ch-c) = 2.0 °C/W enables direct heatsink attachment, maintaining <125 °C junction temp at 30 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLH6212PBF	R_DS(ON) = 4.5 mΩ (V_GS = 10 V), Q_g = 22 nC - lower on-resistance but higher gate charge than TPN7R006PL,L1Q.	Higher Q_g increases driver loss above 1 MHz; better suited for <500 kHz, high-current applications.	Select when lowest conduction loss dominates over switching frequency; verify gate driver capability for 22 nC charge.
SiR626DP	R_DS(ON) = 5.2 mΩ (V_GS = 10 V), Q_oss = 15 nC - slightly lower Q_oss but same V_DSS and package (PowerPAK SO-8L).	PowerPAK SO-8L has different thermal pad layout and solder mask requirements vs. TSON Advance.	Choose for improved reverse recovery performance where layout allows rework for alternate footprint; confirm PCB land pattern compatibility.

Compared with IRLH6212PBF and SiR626DP, TPN7R006PL,L1Q offers the best balance of ultra-low Q_SW (6.8 nC) and competitive R_DS(ON), making it optimal for high-frequency, medium-power DC-DC designs where gate drive loss and thermal management are co-constrained.

Availability

TPN7R006PL,L1Q is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V buck converters, and telecom DC-DC bricks requiring stable component supply, consistent parametric performance, and long-term production support.

Supply support for TPN7R006PL,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, reliability, and miniaturization.

The TPN7R006PL,L1Q belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for TPN7R006PL,L1Q at 100°C case temperature?

The TPN7R006PL,L1Q datasheet specifies 54 A DC at T_c = 25 °C. At T_c = 100 °C, derating applies per the guaranteed maximum P_D-T_c curve (Fig. 8.15): P_D drops to ~75 W, yielding I_D ≈ √(75 W / 0.007 Ω) ≈ 33 A, assuming R_DS(ON) increases to ~7 mΩ at elevated temperature. Always verify with actual thermal design.

Does TPN7R006PL,L1Q support 4.5 V gate drive in practical applications?

Yes-TPN7R006PL,L1Q is characterized down to V_GS = 4.5 V, with R_DS(ON) = 9.2 mΩ (typ.) at ID = 10 A. This enables use with 5 V or 3.3 V logic-level gate drivers in space-constrained designs, though conduction loss increases ~70% versus 10 V drive. Confirm thermal margin under worst-case load.

What is the recommended PCB layout for thermal management of TPN7R006PL,L1Q?

Optimal thermal performance requires maximizing copper area connected to pins 5–8 (drain) and the exposed drain pad beneath the TSON Advance package. Use ≥2 oz copper, multiple thermal vias (≥8 × 0.3 mm) to inner ground planes, and avoid solder mask over the pad. Mounting on a glass-epoxy board per Fig. 5.1 achieves R_th(ch-a) = 56 °C/W.

Is TPN7R006PL,L1Q suitable for avalanche energy handling in hard-switching circuits?

Yes-the TPN7R006PL,L1Q is rated for single-pulse avalanche energy E_AS = 9.8 mJ (V_DD = 48 V, I_AS = 54 A, t = 100 µs). This supports limited unclamped inductive switching, but repetitive avalanche is not guaranteed. For robust hard-switching, use snubbers or ZVS techniques to avoid reliance on E_AS.

How does the body diode performance of TPN7R006PL,L1Q compare to discrete Schottky rectifiers?

The TPN7R006PL,L1Q body diode has V_DSF = −1.2 V (max) and t_rr = 22 ns (typ.), offering faster recovery than standard PN diodes but higher forward drop than 45 V Schottky rectifiers (~0.5 V). In synchronous rectification, its integrated nature eliminates extra component count and layout complexity, though efficiency gain depends on duty cycle and load current.

TPN7R006PL,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1875 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 630mW (Ta), 75W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN7R006PL,L1Q FAQ

1.How can I place an order for TPN7R006PL,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN7R006PL,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN7R006PL,L1Q reliable?

The price and inventory of TPN7R006PL,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN7R006PL,L1Q is usually 5 days.

3.What payment methods are accepted for TPN7R006PL,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN7R006PL,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPN7R006PL,L1Q?

TPN7R006PL,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN7R006PL,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN7R006PL,L1Q?

For technical support, including TPN7R006PL,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN7R006PL,L1Q requirements.

6.How does Aetrix verify that TPN7R006PL,L1Q is sourced from the original manufacturer or authorized distributors?

All TPN7R006PL,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN7R006PL,L1Q meets industry standards.

7.What is the process for return or replacement of TPN7R006PL,L1Q?

All TPN7R006PL,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN7R006PL,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN7R006PL,L1Q part is unused and in its original packaging.

Return procedure for TPN7R006PL,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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