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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPN7R506NH,L1Q

Name: TPN7R506NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN7R506NH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPN7R506NH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPN7R506NH,L1Q.pdf

Description:: MOSFET N-CH 60V 26A 8TSON

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Product details

Overview

TPN7R506NH,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in TSON Advance package, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 6.0 mΩ (typ., V_GS = 10 V), Q_SW = 9.2 nC (typ.), and V_DSS = 60 V, supporting continuous drain current up to 53 A at T_c = 25 °C.

For engineers reviewing the TPN7R506NH,L1Q datasheet, TPN7R506NH,L1Q pinout, TPN7R506NH,L1Q application, or TPN7R506NH,L1Q equivalent, key selection criteria include its low conduction loss, fast switching capability, thermal performance on PCB (R_th(ch-a) = 65.7 °C/W on glass-epoxy board), and avalanche energy rating of 105 mJ.

Technical Context

This U-MOS-H process MOSFET uses trench-gate structure to achieve high cell density and low R_DS(ON). Its gate threshold voltage range (2.0–4.0 V) ensures reliable enhancement-mode operation with standard logic-level drive compatibility.

Dynamic characteristics are optimized for hard-switching topologies: C_iss = 1410 pF (typ.), C_rss = 28 pF (typ.), and t_r/t_f = 5.7/5.6 ns (typ.) under V_DD ≈ 30 V, I_D = 13 A, and R_GG = 4.7 Ω conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(ON)	6.0 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 13 A, reducing heatsink requirements.
Q_SW	9.2 nC (typ.) - Low total switching charge minimizes driver power and enables >500 kHz operation.
I_D (DC)	53 A (T_c = 25 °C) - High current capability supports compact power stages in industrial SMPS.
E_AS	105 mJ - Single-pulse avalanche energy rating allows robustness against inductive switching transients.
R_th(ch-a)	65.7 °C/W - Thermal resistance on standard FR-4 board defines safe operating area under natural convection.

Pinout & Package

TPN7R506NH,L1Q is housed in a surface-mount TSON Advance (2-3X1S) package with exposed drain pad for thermal dissipation. The 8-pin configuration features dual-source and quad-drain terminals to reduce parasitic inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection; low-inductance parallel routing recommended for high di/dt paths.
4	Gate	Control terminal; requires gate resistor (R_GG = 4.7 Ω typical) to dampen ringing during switching.
5, 6, 7, 8	Drain	Power output node; all four pins tied internally to exposed copper pad for enhanced thermal transfer to PCB.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 6.0 mΩ R_DS(ON) in 3.3 × 3.6 mm footprint, improving power density over planar MOSFETs.
Low Q_gd/Q_g ratio	Q_gd = 5.7 nC / Q_g = 22 nC → 26% - Reduces Miller effect, enabling stable operation in synchronous rectification.
Enhancement-mode V_th	2.0–4.0 V - Ensures turn-off at 0 V gate bias and compatibility with 3.3 V/5 V microcontroller outputs.
Integrated body diode	V_DSF = −1.2 V (typ., I_DR = 26 A) - Supports freewheeling in buck and half-bridge topologies without external diode.

Applications

DC-DC Converters	Switching Voltage Regulators
Use Scenario: High-current point-of-load (POL) converter in telecom base station power supplies delivering 12 V @ 30 A. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in buck topology, replacing Schottky diode to reduce conduction loss. Use Value: Achieves >95% efficiency at full load due to 6.0 mΩ R_DS(ON) and low Q_SW, cutting thermal stress by 40% vs. discrete diode solution.	Use Scenario: Adjustable-output step-down regulator for FPGA core voltage (0.8–1.2 V) in industrial PLCs. IC Role / Device Role / Timing Role: High-side switch in constant-on-time (COT) control architecture with fast transient response. Use Value: 5.7 ns rise time and 28 pF Crss enable clean switching edge control, minimizing output voltage overshoot during load steps.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor in automated warehouse conveyors. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling 26 A pulsed current with integrated body diode commutation. Use Value: 135 A pulsed drain current rating and 105 mJ avalanche energy ensure reliability during regenerative braking events.	Use Scenario: Primary-side switch in isolated flyback converter for DIN-rail mounted AC/DC module (24 V, 10 A). IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 30 V V_DS swing and 13 A peak current. Use Value: 1410 pF C_iss and 0.7 Ω gate resistance support predictable gate drive design using standard 1 A peak drivers.

DC-DC Converters

Switching Voltage Regulators

Use Scenario: High-current point-of-load (POL) converter in telecom base station power supplies delivering 12 V @ 30 A.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in buck topology, replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load due to 6.0 mΩ R_DS(ON) and low Q_SW, cutting thermal stress by 40% vs. discrete diode solution.

Use Scenario: Adjustable-output step-down regulator for FPGA core voltage (0.8–1.2 V) in industrial PLCs.

IC Role / Device Role / Timing Role: High-side switch in constant-on-time (COT) control architecture with fast transient response.

Use Value: 5.7 ns rise time and 28 pF Crss enable clean switching edge control, minimizing output voltage overshoot during load steps.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor in automated warehouse conveyors.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling 26 A pulsed current with integrated body diode commutation.

Use Value: 135 A pulsed drain current rating and 105 mJ avalanche energy ensure reliability during regenerative braking events.

Use Scenario: Primary-side switch in isolated flyback converter for DIN-rail mounted AC/DC module (24 V, 10 A).

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 30 V V_DS swing and 13 A peak current.

Use Value: 1410 pF C_iss and 0.7 Ω gate resistance support predictable gate drive design using standard 1 A peak drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(ON) = 7.0 mΩ (V_GS = 4.5 V); smaller 2×2 mm package; lower I_D (25 A DC)	Better suited for space-constrained 3.3 V logic-driven loads; not rated for 53 A continuous operation.	Select when board area is critical and peak current ≤25 A; verify gate drive strength for 4.5 V threshold.
SiR872DP-T1-GE3	R_DS(ON) = 5.2 mΩ (V_GS = 10 V); PowerPAK® SO-8; higher Q_g = 32 nC	Superior conduction loss but slower switching; requires stronger gate driver for same frequency.	Prefer for ultra-low-loss priority in <300 kHz designs; avoid in high-frequency ZVS/ZCS topologies.

Compared with IRLHS6342TRPBF and SiR872DP-T1-GE3, the TPN7R506NH,L1Q balances low R_DS(ON), moderate gate charge, and robust avalanche rating-making it optimal for 48 V industrial DC-DC and motor control where thermal margin and transient resilience are critical.

Availability

TPN7R506NH,L1Q is available at Aetrix Electronics and suitable for DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TPN7R506NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on industrial reliability and energy efficiency.

The TPN7R506NH,L1Q belongs to Toshiba's U-MOS-H series of high-density trench MOSFETs, engineered specifically for high-current, high-frequency switching power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for TPN7R506NH,L1Q?

The TPN7R506NH,L1Q has a maximum continuous drain current (I_D) of 53 A at case temperature T_c = 25 °C. At higher temperatures or with limited PCB copper area, derating applies per the R_th(ch-a) = 65.7 °C/W curve. For sustained 40 A operation, thermal design must maintain T_c ≤ 70 °C. The TPN7R506NH,L1Q datasheet specifies this limit under silicon capability constraints, not package limits alone.

Does TPN7R506NH,L1Q support 5 V gate drive?

Yes, the TPN7R506NH,L1Q is enhancement-mode with V_th = 2.0–4.0 V, making it compatible with 5 V logic-level gate drive. However, R_DS(ON) is specified at V_GS = 10 V (6.0 mΩ typ.). At 5 V, R_DS(ON) rises significantly-consult the R_DS(ON) vs. V_GS curve (Fig. 8.4) to confirm acceptable conduction loss for your application. The TPN7R506NH,L1Q is not optimized for 3.3 V drive without significant R_DS(ON) penalty.

What is the avalanche rating of TPN7R506NH,L1Q and how is it tested?

The TPN7R506NH,L1Q is rated for single-pulse avalanche energy E_AS = 105 mJ under test conditions: V_DD = 48 V, T_ch = 25 °C (initial), L = 0.12 mH, and I_AR = 26 A. This rating reflects ruggedness against inductive switching transients in hard-switched topologies. The TPN7R506NH,L1Q does not guarantee repetitive avalanche operation; designers must avoid repeated avalanche events per reliability guidelines in Toshiba's Semiconductor Reliability Handbook.

How is thermal performance characterized for TPN7R506NH,L1Q on PCB?

Thermal performance of the TPN7R506NH,L1Q is specified with two ambient conditions: R_th(ch-a) = 65.7 °C/W for a glass-epoxy board (a) and 178 °C/W for board (b), per Figures 5.1 and 5.2. These values assume no external heatsink and standard 1 oz copper. The TPN7R506NH,L1Q's exposed drain pad must be soldered to ≥2 cm² of inner-layer copper pour for optimal heat spreading. Channel-to-case resistance is 2.97 °C/W, confirming strong thermal coupling to the PCB.

Is TPN7R506NH,L1Q suitable for synchronous rectification in a 48 V input buck converter?

Yes, the TPN7R506NH,L1Q is well-suited for synchronous rectification in 48 V input buck converters due to its low R_DS(ON) (6.0 mΩ), low Q_gd/Q_g ratio (26%), and fast switching times (t_r/t_f = 5.7/5.6 ns). Its body diode V_DSF = −1.2 V (typ.) supports efficient freewheeling. For optimal performance, pair with a gate driver capable of sinking ≥2 A peak current and use layout practices that minimize loop inductance. The TPN7R506NH,L1Q's U-MOS-H structure ensures stable behavior under high dV/dt conditions typical in synchronous buck operation.

TPN7R506NH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta), 42W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSON Advance (3.1x3.1)

TPN7R506NH,L1Q FAQ

1.How can I place an order for TPN7R506NH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPN7R506NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPN7R506NH,L1Q reliable?

The price and inventory of TPN7R506NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPN7R506NH,L1Q is usually 5 days.

3.What payment methods are accepted for TPN7R506NH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPN7R506NH,L1Q transactions.

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4.How is shipping managed for TPN7R506NH,L1Q?

TPN7R506NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPN7R506NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPN7R506NH,L1Q?

For technical support, including TPN7R506NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPN7R506NH,L1Q requirements.

6.How does Aetrix verify that TPN7R506NH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPN7R506NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPN7R506NH,L1Q meets industry standards.

7.What is the process for return or replacement of TPN7R506NH,L1Q?

All TPN7R506NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPN7R506NH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPN7R506NH,L1Q part is unused and in its original packaging.

Return procedure for TPN7R506NH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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