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Texas Instruments TPS1100D
- Part No.:
- TPS1100D
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
TPS1100D.pdf
- Description:
- MOSFET P-CH 15V 1.6A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:346
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Product details
Overview
TPS1100D from Texas Instruments is a single P-channel enhancement-mode MOSFET optimized for high-side power distribution in 3-V/5-V battery-powered systems. It features a maximum VGS(th) of –1.5 V, typical rDS(on) of 0.18 Ω at VGS = –10 V, and TTL/CMOS-compatible inputs-enabling direct microcontroller control without external level-shifting or VCC. It serves as a low-quiescent-current load switch in portable electronics such as notebook computers and cellular handsets.
For engineers reviewing the TPS1100D datasheet, TPS1100D pinout, TPS1100D application, or TPS1100D equivalent, key selection criteria include its SOIC-8 package compatibility, –15 V drain-source rating, 1.6 A continuous drain current at 25°C, ESD protection up to 2 kV, and suitability for PWM-controlled power rails where low gate charge (5.45 nC) and fast switching (10 ns rise time) are critical.
Technical Context
The TPS1100D operates as a high-side switch using LinBiCMOS process technology, enabling reliable turn-on with gate voltages as low as –2.7 V. Its negative threshold voltage (–1.25 V typ) and sub-1 µA IDSS ensure minimal leakage during standby, directly supporting battery-life optimization in portable systems.
It integrates on-chip ESD protection per MIL-STD-883C Method 3015 and exhibits robust dynamic performance: 10 ns rise time, 2 ns fall time, and 13 ns turn-off delay under standard test conditions (VDD = –10 V, RG = 6 Ω, ID = –1 A), making it suitable for high-frequency load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | –15 V - supports full operation across 3-V and 5-V battery rails with margin against transients |
| rDS(on) (typ) | 0.18 Ω at VGS = –10 V - minimizes conduction loss and self-heating in high-current load paths |
| VGS(th) (max) | –1.5 V - ensures reliable turn-on with standard 3.3-V or 5-V logic outputs |
| ID (cont) | ±1.6 A at TA = 25°C - sufficient for powering peripherals like USB ports or display backlights |
| Qg | 5.45 nC - enables efficient gate driving with low-power controllers and reduces switching energy loss |
| ESD Rating | 2 kV HBM - provides built-in protection for handling and board-level integration without added TVS devices |
| Package | SOIC-8 (D) - industry-standard footprint compatible with existing layouts and automated assembly |
Pinout & Package
TPS1100D uses the 8-pin SOIC (D) package, measuring 4.9 mm × 3.9 mm × 1.75 mm, with gull-wing leads and RoHS-compliant NiPdAu plating. It is rated for operation from –40°C to +125°C ambient temperature and has a thermal resistance (RθJA) of 158°C/W on FR4 board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | All four source pins must be connected together to minimize resistance and thermal impedance in high-current paths |
| 5 | Gate | Control input accepting TTL/CMOS logic levels; requires no external pull-up or level shifter for 3-V systems |
| 6, 7, 8 | Drain | Three paralleled drain terminals reduce on-resistance and improve current sharing in load-switch applications |
Key Features
| Feature | Design Value |
|---|---|
| 3-V logic compatibility | Operates fully with 3.3-V microcontrollers-no external VCC or level translation required |
| Low IDSS leakage | 0.5 µA max at 25°C-preserves battery charge during system sleep modes |
| Ultralow gate charge | 5.45 nC total-reduces driver power consumption and simplifies gate-drive design |
| Fast switching | 10 ns rise time and 2 ns fall time-supports high-frequency PWM load control up to several MHz |
| Integrated ESD protection | 2 kV HBM per MIL-STD-883C-eliminates need for discrete ESD diodes in most portable designs |
Applications
| Notebook Load Management | Cellular Phone Output Drive |
|---|---|
Use Scenario: Selective power gating of USB ports, card readers, or backlight circuits in battery-operated notebooks. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with microcontroller GPIO timing. Use Value: Enables zero-quiescent-current shutdown via gate control, extending runtime by eliminating standby leakage through unpowered subsystems. | Use Scenario: Driving GaAs FET amplifier bias rails in RF front-end modules of cellular handsets. IC Role / Device Role / Timing Role: Precision high-side switch synchronizing with baseband processor enable signals. Use Value: Delivers clean, fast-rising 5-V supply to RF stages with <10 ns edge control-minimizing RF transient coupling and improving spectral purity. |
| PCMCIA Card Power Control | PDA Peripheral Switching |
Use Scenario: Hot-swap power sequencing for PCMCIA cards in legacy industrial laptops. IC Role / Device Role / Timing Role: Isolation switch enforcing safe insertion/removal timing per PCMCIA specification. Use Value: Prevents bus contention and inrush surges using controlled turn-on slope and integrated ESD protection on all pins. | Use Scenario: Dynamic power routing to GPS receivers, Bluetooth radios, or SD card slots in handheld PDAs. IC Role / Device Role / Timing Role: Low-leakage high-side switch activated by ARM core GPIO with precise voltage threshold behavior. Use Value: Achieves <1 µA system standby current by leveraging –1.5 V max VGS(th) and sub-µA IDSS, meeting stringent PDA battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS1100PW | TSSOP-8 package (3.0 mm × 4.4 mm); 248°C/W RθJA; same electrical specs | Better board-space efficiency but lower thermal dissipation capability | Select when PCB height or footprint is constrained and power dissipation remains ≤300 mW |
| Si2301DS | SOT-23-3 package; –20 V VDS; 115 mΩ rDS(on) at –4.5 V; 2.5 nC Qg | Lower current rating (2.3 A max), smaller footprint, higher voltage margin | Choose for space-constrained, lower-power loads where SOIC-8 is impractical and –20 V rating adds safety margin |
Compared with TPS1100PW, the TPS1100D offers superior thermal performance and legacy SOIC-8 layout compatibility; compared with Si2301DS, it delivers higher current capacity and proven integration in TI-based reference designs for notebook and telecom platforms-making TPS1100D optimal for medium-power, thermally demanding, or pin-compatible upgrade paths.
Availability
TPS1100D is available at Aetrix Electronics and suitable for notebook computers, cellular telephones, PCMCIA cards, and PDA peripheral power management requiring stable component supply and long-term industrial availability.
Supply support for TPS1100D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and personal electronics markets.
The TPS1100D belongs to TI's LinBiCMOS high-side switch product line, designed specifically for low-voltage, low-leakage power distribution in portable battery systems where maximizing operational runtime is essential.
FAQ
What is the maximum continuous drain current for the TPS1100D at 125°C ambient temperature?
The TPS1100D supports ±0.72 A continuous drain current at TA = 125°C when VGS = –4.5 V, based on thermal derating from its 158°C/W junction-to-ambient resistance. This value is confirmed in the Absolute Maximum Ratings table of the SLVS078C datasheet and reflects real-world operation on standard FR4 PCBs without heatsinking. The TPS1100D maintains safe operation within its 150°C maximum junction temperature limit under these conditions.
Does the TPS1100D require an external pull-up resistor on the gate pin?
No, the TPS1100D does not require an external pull-up resistor on the gate pin. Its gate threshold voltage (VGS(th)) is specified as –1.5 V maximum, and it is explicitly designed for direct TTL/CMOS logic interface-meaning a microcontroller GPIO outputting 0 V (low) turns the device on, and 3.3 V or 5 V (high) turns it off. The internal gate structure and low IGSS (<100 nA) eliminate the need for external biasing components in standard configurations.
Can the TPS1100D be used in PWM applications, and what is its typical switching speed?
Yes, the TPS1100D is qualified for PWM applications, with documented typical values of 10 ns rise time, 2 ns fall time, and 13 ns turn-off delay under VDD = –10 V, RG = 6 Ω, and ID = –1 A. These figures-alongside its 5.45 nC total gate charge-support clean, efficient switching at frequencies up to several MHz in motor drivers, LED dimming, and DC-DC converter auxiliary rails. The TPS1100D datasheet includes Figures 1 and 2 confirming this behavior in standard test circuits.
What is the meaning of the "R" suffix in TPS1100DR, and how does it affect packaging?
The "R" suffix in TPS1100DR indicates tape-and-reel packaging: 2500 units per large reel (330 mm diameter, 12.4 mm width), with pin 1 located in quadrant Q1 per JEDEC standards. This differs from the tube-packaged TPS1100D (75 units per tube). Both share identical die, SOIC-8 (D) package dimensions, and electrical specifications-the "R" denotes only the logistics format and does not imply any functional or reliability difference in the TPS1100D silicon itself.
Is the TPS1100D pin-compatible with other SOIC-8 P-channel MOSFETs used in legacy designs?
Yes, the TPS1100D is pin-compatible with standard SOIC-8 P-channel MOSFETs, as explicitly stated in the datasheet: "For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages." Its 1–4 source / 5 gate / 6–8 drain pin assignment matches industry conventions, enabling drop-in replacement in many power-distribution layouts-provided thermal and electrical margins (e.g., rDS(on), Qg, VGS(th)) align with system requirements.
TPS1100D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 15 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.45 nC @ 10 V
- Vgs (Max):
- +2V, -15V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 791mW (Ta)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
TPS1100D FAQ
1.How can I place an order for TPS1100D through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS1100D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS1100D reliable?
The price and inventory of TPS1100D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS1100D is usually 5 days.
3.What payment methods are accepted for TPS1100D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS1100D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS1100D?
TPS1100D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS1100D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS1100D?
For technical support, including TPS1100D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS1100D requirements.
6.How does Aetrix verify that TPS1100D is sourced from the original manufacturer or authorized distributors?
All TPS1100D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS1100D meets industry standards.
7.What is the process for return or replacement of TPS1100D?
All TPS1100D units undergo pre-shipment inspection (PSI). If there is an issue with TPS1100D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS1100D part is unused and in its original packaging.
Return procedure for TPS1100D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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