Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments TPS1100PW

Part No.:
TPS1100PW
Manufacturer:
Texas Instruments
Category:
FETs, MOSFETs
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixTPS1100PW.pdf
Description:
MOSFET P-CH 15V 1.27A 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:508

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPS1100PW from Texas Instruments is a single P-channel enhancement-mode MOSFET optimized for high-side power distribution in 3-V/5-V battery-powered systems. It features a maximum VGS(th) of –1.5 V, typical rDS(on) of 0.18 Ω at VGS = –10 V, and TTL/CMOS-compatible inputs-enabling direct microcontroller control in portable load management circuits such as notebook computer power rails.

For engineers reviewing the TPS1100PW datasheet, TPS1100PW pinout, TPS1100PW application, or TPS1100PW equivalent, key selection criteria include its ultrathin TSSOP-8 package, 2 kV ESD protection per MIL-STD-883C, –15 V drain-to-source rating, –40°C to 125°C operating temperature range, and suitability for low-voltage PWM-controlled power switching where board height and footprint are constrained.

Technical Context

The TPS1100PW operates as a high-side switch using P-channel enhancement-mode architecture with LinBiCMOS process optimization. Its gate threshold voltage (–1.5 V max) ensures reliable turn-on from 3-V logic, while low leakage (IDSS ≤ 0.5 µA at 25°C) minimizes standby current in battery-critical applications.

Dynamic performance includes 10 ns typical rise time and 2 ns fall time under VDD = –10 V, RL = 10 Ω, ID = –1 A conditions. The device integrates on-chip ESD protection (2 kV HBM) and requires no external VCC, simplifying integration into space-constrained portable designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating–15 V - Supports full operation across 3-V and 5-V rail systems with margin against transients.
rDS(on)0.18 Ω typ at VGS = –10 V - Enables <100 mW conduction loss at 750 mA, critical for thermal management in sealed enclosures.
VGS(th)–1.5 V max - Guarantees robust turn-on from standard 3-V CMOS/TTL outputs without level-shifting.
ID Continuous±1.27 A at TA = 25°C (PW package) - Sufficient for powering peripheral modules like PCMCIA cards or display backlights.
ESD Rating2 kV per MIL-STD-883C Method 3015 - Meets industrial handling requirements without additional external protection.
PackageTSSOP-8 (PW) - 3.0 mm × 4.4 mm × 1.2 mm profile enables placement in ultra-thin handheld devices.
Switching Speed10 ns rise / 2 ns fall - Supports high-frequency PWM control up to ~35 MHz for efficient DC-DC converter synchronization.

Pinout & Package

TPS1100PW uses an 8-pin ultrathin TSSOP (PW) package with exposed pad for thermal dissipation. All source pins must be connected together; all drain pins must be connected together per datasheet note A.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceCommon high-side return path; parallel connection required to achieve rated current and minimize resistance.
5GATEControl input accepting 3-V logic levels; negative VGS turns device ON.
6, 7, 8DrainHigh-side power output node; connects to load; multiple pins reduce trace inductance and improve current sharing.

Key Features

FeatureDesign Value
3-V logic compatibilityGuaranteed turn-on with VGS(th) ≤ –1.5 V enables direct interface to microcontrollers and PMICs without gate drivers.
Ultrathin TSSOP-8 package1.2 mm max height allows use in sub-10 mm thick consumer electronics where SOIC is physically incompatible.
No external VCC requiredSelf-contained biasing eliminates auxiliary supply routing, reducing BOM count and layout complexity.
Low IDSS leakage≤0.5 µA at 25°C preserves battery life in always-on monitoring circuits such as real-time clock backup rails.
Integrated ESD protection2 kV HBM rating meets MIL-STD-883C without requiring external TVS diodes on gate or drain lines.

Applications

Notebook Load ManagementCellular Phone Output Drive

Use Scenario: Power gating of USB peripherals and display backlight in clamshell-form factor notebooks.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3-V rail delivery based on system suspend/resume signals.

Use Value: 0.18 Ω rDS(on) limits voltage drop to <150 mV at 800 mA, preserving regulation margin for sensitive analog subsystems.

Use Scenario: Enabling/disabling GaAs FET amplifier stages in cellular handset RF front-end modules.

IC Role / Device Role / Timing Role: Fast-switching power enable for transmit/receive path isolation during mode transitions.

Use Value: 10 ns rise time supports clean 2G/3G burst timing envelopes without signal distortion or cross-talk.

PCMCIA Card Power ControlPDA Battery Backup Switching

Use Scenario: Hot-swap power sequencing for Type II PCMCIA expansion cards in portable terminals.

IC Role / Device Role / Timing Role: Inrush-limited high-side switch with controlled turn-on to prevent bus voltage sag during card insertion.

Use Value: Gate charge Qg = 5.45 nC enables precise RC-based slew-rate control using a single external resistor.

Use Scenario: Isolating main Li-ion battery from RTC and SRAM retention circuits during deep sleep.

IC Role / Device Role / Timing Role: Ultra-low-leakage high-side disconnect switch maintaining >10-year shelf life.

Use Value: IDSS ≤ 0.5 µA at 25°C reduces annual self-discharge contribution to <0.04% of battery capacity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPS1100DSOIC-8 package (4.9 mm × 6.0 mm × 1.75 mm); higher RθJA (158°C/W vs 248°C/W); same electrical specs.Preferred where board height >1.75 mm is acceptable and legacy SOIC footprints exist.Select TPS1100D only when mechanical redesign for TSSOP is impractical and thermal derating is verified.
Si2301DS0.14 Ω rDS(on) at –4.5 V; 0.95 A ID continuous; SOT-23-3 package; no integrated ESD protection.Better conduction efficiency but requires external ESD protection and lacks multi-pin drain/source for high-current paths.Choose Si2301DS only for cost-sensitive, low-current (<500 mA), non-military applications with added protection circuitry.

Compared with TPS1100D and Si2301DS, the TPS1100PW uniquely balances ultrathin packaging, integrated 2 kV ESD, and multi-pin terminations for high-current reliability-making it optimal for next-generation portable electronics where volume and height constraints dominate.

Availability

TPS1100PW is available at Aetrix Electronics and suitable for notebook computers, cellular telephones, PCMCIA cards, and personal digital assistants requiring stable component supply with long-term lifecycle support.

Supply support for TPS1100PW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.

The TPS1100PW belongs to TI's LinBiCMOS high-side power switch family, designed specifically for low-voltage battery-powered systems where minimal board area, low quiescent current, and direct 3-V logic compatibility are mandatory.

FAQ

What is the maximum continuous drain current for the TPS1100PW at 25°C ambient temperature?

The TPS1100PW supports ±1.27 A continuous drain current at TA = 25°C in its PW package, as specified in the Absolute Maximum Ratings table. This value assumes standard FR4 PCB mounting with no heatsinking and accounts for thermal derating above 25°C using a 4.03 mW/°C factor.

Does the TPS1100PW require an external gate pull-up resistor?

No, the TPS1100PW does not require an external gate pull-up resistor because it functions as a high-side P-channel switch: the gate is actively driven low to turn ON and pulled high (to source potential) to turn OFF. External resistors are only needed for slew-rate control or noise immunity in specific layouts.

Can the TPS1100PW be used in a 1.8-V logic system?

The TPS1100PW is not guaranteed to operate reliably with 1.8-V logic due to its VGS(th) specification of –1.5 V max; a 1.8-V system provides only –1.8 V VGS, which may yield marginal or inconsistent turn-on. For 1.8-V systems, TI recommends evaluating the TPS229xx series instead.

What is the thermal resistance (RθJA) of the TPS1100PW package?

The TPS1100PW has a junction-to-ambient thermal resistance (RθJA) of 248°C/W when mounted on a standard FR4 board with no special thermal enhancements. This value is used to calculate power derating curves and maximum allowable power dissipation at elevated ambient temperatures.

Is the TPS1100PW RoHS compliant and lead-free?

Yes, the TPS1100PW is RoHS compliant and features NiPdAu (NIPDAU) lead finish. Its MSL rating is Level-1 at 260°C peak reflow, and it is qualified for standard lead-free soldering processes without special handling requirements.

TPS1100PW Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Bulk
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
15 V
Current - Continuous Drain (Id) @ 25°C:
1.27A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5.45 nC @ 10 V
Vgs (Max):
+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
504mW (Ta)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

TPS1100PW FAQ

1.How can I place an order for TPS1100PW through Aetrix?

Please submit a Request for Quotation (RFQ) for TPS1100PW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPS1100PW reliable?

The price and inventory of TPS1100PW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS1100PW is usually 5 days.

3.What payment methods are accepted for TPS1100PW?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS1100PW transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPS1100PW?

TPS1100PW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPS1100PW order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPS1100PW?

For technical support, including TPS1100PW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS1100PW requirements.

6.How does Aetrix verify that TPS1100PW is sourced from the original manufacturer or authorized distributors?

All TPS1100PW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS1100PW meets industry standards.

7.What is the process for return or replacement of TPS1100PW?

All TPS1100PW units undergo pre-shipment inspection (PSI). If there is an issue with TPS1100PW, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPS1100PW part is unused and in its original packaging.

Return procedure for TPS1100PW:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPS1100PW Tags

  • TPS1100PW
  • TPS1100PW PDF
  • TPS1100PW Datasheet
  • TPS1100PW Specifications
  • TPS1100PW Images
  • Texas Instruments
  • Texas Instruments TPS1100PW
  • Buy TPS1100PW
  • TPS1100PW Price
  • TPS1100PW Distributor
  • TPS1100PW Supplier
  • TPS1100PW Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER