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Texas Instruments TPS1100PWR
- Part No.:
- TPS1100PWR
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
TPS1100PWR.pdf
- Description:
- MOSFET P-CH 15V 1.27A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,273
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Product details
Overview
TPS1100PWR from Texas Instruments is a single P-channel enhancement-mode MOSFET optimized for high-side power switching in 3-V/5-V battery-powered systems. It features a maximum gate threshold voltage of –1.5 V, typical on-resistance of 0.18 Ω at VGS = –10 V, and TTL/CMOS-compatible inputs - enabling direct microcontroller control without external level-shifting or VCC. It serves as a low-quiescent-current load switch in portable electronics such as notebook computers and cellular handsets.
For engineers reviewing the TPS1100PWR datasheet, TPS1100PWR pinout, TPS1100PWR application, or TPS1100PWR equivalent, key selection criteria include its ultrathin TSSOP-8 package height (1.05 mm), –40°C to 125°C operating ambient range, ESD rating of 2 kV per MIL-STD-883C Method 3015, and verified suitability for PWM-controlled power distribution with 10 ns typical rise time.
Technical Context
The TPS1100PWR operates as a high-side load switch using a LinBiCMOS process, delivering low VGS(th) (–1.5 V max) and ultra-low IDSS (0.5 µA at 25°C) to minimize standby leakage in battery-critical systems. Its gate drive requires no auxiliary supply, accepting logic-level inputs directly from 3-V or 5-V controllers.
Thermal performance is defined by RθJA = 248°C/W on FR4 board, supporting continuous drain current up to ±1.27 A at TA = 25°C with VGS = –10 V. Dynamic parameters include 5.45 nC total gate charge and 10 ns typical rise time, confirming fast switching capability for pulse-width-modulated loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | –15 V - supports safe operation across 12-V rail transients in portable power domains. |
| rDS(on) Typ | 0.18 Ω at VGS = –10 V - enables <180 mW conduction loss at 1 A, critical for thermal budget in compact layouts. |
| VGS(th) Max | –1.5 V - ensures reliable turn-on with 3-V logic outputs without gate boosting. |
| ID Continuous | ±1.27 A at TA = 25°C, VGS = –10 V - sufficient for moderate-power peripheral switching (e.g., USB ports, display backlights). |
| ESD Rating | 2 kV HBM per MIL-STD-883C Method 3015 - provides baseline robustness against handling-induced discharge in assembly environments. |
| Rise Time | 10 ns typical - supports high-frequency PWM (>1 MHz) without excessive switching losses in motor or LED drivers. |
| Package | TSSOP-8 (PW) - 3.0 × 4.4 × 1.05 mm footprint and profile fits space-constrained PCBs where SOIC-8 is too tall. |
Pinout & Package
TPS1100PWR is housed in an 8-pin ultrathin TSSOP (PW) package with exposed pad not electrically connected. The device uses a symmetrical source-drain layout optimized for high-current routing: four source pins (1, 2, 3, 4) and four drain pins (5, 6, 7, 8), with gate on pin 8. All source pins must be tied together externally; same for all drain pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source node; parallel connection required to achieve rated current and thermal performance. |
| 5, 6, 7 | Drain | Primary drain terminals; used for main current path to load. |
| 8 | Gate + Drain | Combined gate input and drain connection - gate signal applied here; internal ESD protection diode ties gate to drain. |
Key Features
| Feature | Design Value |
|---|---|
| 3-V logic compatible | Guaranteed turn-on with 3-V microcontroller GPIOs due to –1.5 V max VGS(th), eliminating level shifters. |
| No external VCC | Self-contained gate drive architecture removes need for auxiliary bias supply, reducing BOM count and layout complexity. |
| Ultrathin TSSOP-8 | 1.05-mm height enables stacking under connectors or in slim handheld enclosures where SOIC-8 exceeds mechanical clearance. |
| Low IDSS | 0.5 µA max at 25°C minimizes battery drain during system sleep, extending runtime in always-on portable devices. |
| Fast switching | 10 ns rise time and 2 ns fall time support efficient PWM dimming and motor commutation without shoot-through risk. |
Applications
| Notebook Load Management | Cellular Phone Output Drive |
|---|---|
Use Scenario: Selective power gating of USB peripherals, card readers, or display backlight in clamshell notebooks. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3-V or 5-V rails under firmware command via GPIO. Use Value: Achieves <0.5 µA off-state leakage and <180 mΩ on-resistance, preserving battery life while enabling rapid power cycling. |
Use Scenario: Driving GaAs FET amplifier stages or RF front-end modules in GSM/UMTS handsets. IC Role / Device Role / Timing Role: High-speed enable/disable switch for RF power amplifiers synchronized with transmit bursts. Use Value: 10 ns rise time ensures clean RF envelope control; –15 V VDS rating accommodates transient spikes in antenna switching paths. |
| PCMCIA Card Power Control | PDA Peripheral Switching |
Use Scenario: Hot-swap power sequencing for PCMCIA Type II cards in industrial data loggers or legacy docking stations. IC Role / Device Role / Timing Role: Inrush-limited high-side switch isolating card VCC from host bus during insertion/removal. Use Value: Low rDS(on) prevents voltage droop under 1-A card load; ESD-hardened inputs survive repeated connector mating cycles. |
Use Scenario: Dynamic power allocation to SD card slots, IR transceivers, or Bluetooth modules in palm-sized PDAs. IC Role / Device Role / Timing Role: Firmware-controlled power gate managing shared battery capacity across multiple low-duty-cycle peripherals. Use Value: –1.5 V VGS(th) allows direct ARM7/9 GPIO control; 1.05-mm TSSOP height fits beneath compact LCD assemblies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3457DV | Lower rDS(on) (0.12 Ω typ), but higher VGS(th) (–2.5 V max) and SO-8 package (1.75 mm height). | Better conduction efficiency at >1.5 A, but requires gate pull-up or level shifter for 3-V logic. | Choose Si3457DV only if board height permits SO-8 and system can accommodate higher gate drive voltage. |
| DMG2305UVT | Similar TSSOP-6 package (1.1 mm height), but only 6 pins and lower ID (–2.2 A @ TA = 25°C, VGS = –4.5 V). | Smaller footprint but reduced current capability and no multi-pin source/drain paralleling for thermal spreading. | Prefer DMG2305UVT when space is tighter than 3.0 × 4.4 mm and peak load stays below 1 A. |
Compared with Si3457DV and DMG2305UVT, the TPS1100PWR uniquely balances 3-V logic compatibility, ultrathin profile, and multi-pin paralleling - making it optimal for space- and battery-life-constrained 3-V systems where gate simplicity and thermal margin are prioritized over absolute lowest rDS(on).
Availability
TPS1100PWR is available at Aetrix Electronics and suitable for notebook computers, cellular telephones, and PCMCIA card power management requiring stable component supply across extended production lifecycles.
Supply support for TPS1100PWR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies since 1930.
The TPS1100PWR belongs to TI's LinBiCMOS high-side switch family, engineered specifically for low-voltage battery-powered systems where minimal quiescent current, logic-level gate drive, and compact packaging are mandatory design requirements.
FAQ
What is the maximum continuous drain current for TPS1100PWR at 125°C ambient?
The TPS1100PWR supports ±0.58 A continuous drain current at TA = 125°C and VGS = –10 V, based on its thermal derating factor of 4.03 mW/°C and RθJA = 248°C/W on standard FR4. This value is confirmed in the Absolute Maximum Ratings table of the SLVS078C datasheet and reflects real-world thermal limits under worst-case PCB conditions without heatsinking.
Does TPS1100PWR require an external gate pull-up resistor?
No, the TPS1100PWR does not require an external gate pull-up resistor. Its gate threshold voltage is specified as –1.5 V maximum, allowing direct interface with 3-V or 5-V CMOS/TTL outputs. The device's internal structure and low IGSS (±100 nA) ensure stable off-state behavior without external biasing components - a key feature documented in the "description" section of the SLVS078C datasheet.
Can TPS1100PWR be used in reverse polarity protection circuits?
Yes, the TPS1100PWR can be configured for reverse polarity protection by connecting source to input and drain to load, leveraging its body diode orientation. However, its VSD is –0.9 V at –1 A, meaning forward conduction introduces ~0.9 V drop - less ideal than dedicated protection ICs. This use case is supported by the device's –15 V VDS rating and is validated in application note SNVA009 for P-channel high-side switches.
What is the gate charge (Qg) specification for TPS1100PWR?
The TPS1100PWR has a total gate charge (Qg) of 5.45 nC at VDS = –10 V, VGS = –10 V, and ID = –1 A, as measured per JEDEC-standard dynamic test conditions. This value directly impacts switching loss and drive strength requirements - for example, driving Qg at 1 MHz PWM demands average gate current of ~5.45 µA, well within capability of standard microcontroller GPIOs.
Is the TPS1100PWR RoHS compliant and lead-free?
Yes, the TPS1100PWR is RoHS compliant and features NiPdAu (NIPDAU) lead finish, as confirmed in TI's official Packaging Information document dated 11-Nov-2025. It carries MSL Level-1 rating with unlimited floor life at ≤30°C/60% RH and peak reflow temperature of 260°C - fully compatible with standard lead-free SMT assembly processes.
TPS1100PWR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 15 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.45 nC @ 10 V
- Vgs (Max):
- +2V, -15V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 504mW (Ta)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
TPS1100PWR FAQ
1.How can I place an order for TPS1100PWR through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS1100PWR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS1100PWR reliable?
The price and inventory of TPS1100PWR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS1100PWR is usually 5 days.
3.What payment methods are accepted for TPS1100PWR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS1100PWR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS1100PWR?
TPS1100PWR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS1100PWR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS1100PWR?
For technical support, including TPS1100PWR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS1100PWR requirements.
6.How does Aetrix verify that TPS1100PWR is sourced from the original manufacturer or authorized distributors?
All TPS1100PWR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS1100PWR meets industry standards.
7.What is the process for return or replacement of TPS1100PWR?
All TPS1100PWR units undergo pre-shipment inspection (PSI). If there is an issue with TPS1100PWR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS1100PWR part is unused and in its original packaging.
Return procedure for TPS1100PWR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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