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Toshiba Semiconductor and Storage TPW1500CNH,L1Q
- Part No.:
- TPW1500CNH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPW1500CNH,L1Q.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR DSO
- Quantity:
- Payment:
- Shipping:
Inventory:6,746
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Product details
Overview
TPW1500CNH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and voltage regulators. It delivers 150 V drain-source breakdown voltage, 13 mΩ typical RDS(ON) at VGS = 10 V, and 8.2 nC typical gate charge - enabling low conduction loss and fast switching in compact industrial and telecom power stages.
For engineers reviewing the TPW1500CNH datasheet, TPW1500CNH pinout, TPW1500CNH application, or TPW1500CNH equivalent, key selection criteria include its DSOP Advance package thermal performance (Rth(ch-c) = 0.88 °C/W), 38 A DC current rating, and enhancement-mode threshold (2.0–4.0 V) for reliable gate drive compatibility with standard 3.3 V/5 V controllers.
Technical Context
The TPW1500CNH employs Toshiba's U-MOSⅧ-H trench-gate process to optimize vertical current flow and reduce specific on-resistance. Its structure supports high-speed switching via low Ciss (1700 pF typ.) and Crss (7.0 pF typ.), while the bottom-drain DSOP Advance package enhances thermal transfer to the PCB ground plane.
This MOSFET operates as a synchronous rectifier or primary-side switch in non-isolated buck and half-bridge topologies. Its 150 V VDSS, 220 A pulsed drain current, and 198 mJ single-pulse avalanche energy support robust operation under transient overvoltage and inductive load switching conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Withstands up to 150 V drain-to-source voltage, suitable for 48 V input bus systems with margin. |
| RDS(ON) | 13 mΩ (typ. at VGS = 10 V) - Enables <1 W conduction loss at 19 A continuous current. |
| Qg | 22 nC (typ.) - Determines total gate drive energy required per switching cycle. |
| QSW | 8.2 nC (typ.) - Gate switch charge directly impacts turn-on/turn-off timing and driver sizing. |
| ID (DC) | 38 A (Tc = 25 °C) - Continuous current capability limited by channel temperature, not package alone. |
| Rth(ch-c) | 0.88 °C/W - Thermal resistance from channel to case enables high-power dissipation when mounted to heatsink or copper pour. |
| EAS | 198 mJ (typ.) - Single-pulse avalanche energy rating validates ruggedness during inductive switching transients. |
Pinout & Package
TPW1500CNH uses the DSOP Advance surface-mount package (TOSHIBA designation: 2-5S1A), featuring a bottom-drain thermal pad for enhanced PCB heat dissipation and a compact 5.0 × 6.0 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; electrically tied to internal source metallization and top-side solderable terminals. |
| 4 | Gate | Control terminal requiring ~10 V drive for full enhancement; sensitive to ESD (±20 V absolute max). |
| 5, 6, 7, 8 | Drain | Main high-side current path; connected to bottom thermal pad for low-inductance, high-current routing and thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Reduces RDS(ON) × area product by >25% vs. prior U-MOS generations, improving power density. |
| Low QSW/Qg ratio | 8.2 nC / 22 nC = 0.37 - Indicates efficient gate drive utilization and reduced Miller effect during switching. |
| Enhancement-mode Vth | 2.0–4.0 V - Ensures reliable turn-off at 0 V gate bias and compatibility with logic-level drivers. |
| Low IDSS | ≤10 µA at 150 V - Minimizes standby leakage in high-voltage hold circuits and improves system efficiency at light loads. |
| DSOP Advance package | Bottom-drain construction reduces thermal resistance by 30% vs. standard SOP-8, supporting higher power in same board area. |
Applications
| Telecom DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: Step-down conversion from 48 V intermediate bus to 12 V or 5 V for base station RF modules and backplane interfaces. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck regulator operating at 300–500 kHz. Use Value: 13 mΩ RDS(ON) and 8.2 nC QSW enable >95% efficiency at 20 A output while minimizing gate driver losses. | Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators and conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM commutation. Use Value: 220 A pulsed drain current and 198 mJ avalanche energy tolerate motor phase reversal spikes without clamping diodes. |
| Server VRMs | Renewable Energy Inverters |
Use Scenario: Core power delivery for CPU/GPU VRMs in data center servers, where compact size and thermal headroom are critical. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with 1 MHz+ switching frequency. Use Value: DSOP Advance bottom-drain layout allows direct thermal coupling to 2 oz copper planes, maintaining Tch < 125 °C at full load. | Use Scenario: DC link switching in micro-inverters and string inverters for residential solar arrays with 100–150 V PV string inputs. IC Role / Device Role / Timing Role: High-voltage switch in boost stage or H-bridge output stage. Use Value: 150 V VDSS provides 20% margin above nominal 120 V PV string voltage, reducing risk of overvoltage failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | 100 V VDSS, 5.5 mΩ RDS(ON), TO-220FP package | Limited to ≤100 V systems; higher RDS(ON) at 150 V bias due to lower voltage rating | Select only if system bus voltage stays below 80 V and through-hole mounting is preferred. |
| IXTP150N10T | 100 V VDSS, 6.0 mΩ RDS(ON), TO-220 package | No bottom-drain thermal path; Rth(ch-a) = 60 °C/W vs. TPW1500CNH's 50 °C/W on PCB | Choose when legacy TO-220 layout exists and thermal budget allows higher junction rise. |
Compared with STP150N10F7 and IXTP150N10T, the TPW1500CNH offers 50 V higher blocking voltage, surface-mount DSOP Advance packaging for superior thermal management, and optimized gate charge for high-frequency operation - making it uniquely suited for space-constrained, high-efficiency 48–150 V power stages.
Availability
TPW1500CNH is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for TPW1500CNH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.
The TPW1500CNH belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching applications in telecom infrastructure, industrial automation, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for TPW1500CNH?
The TPW1500CNH has a DC drain current rating of 38 A at case temperature Tc = 25 °C. This value decreases with rising case temperature per the derating curve in Figure 8.12. At Tc = 100 °C, the usable DC current drops to approximately 22 A. The 38 A rating assumes proper PCB thermal design using the DSOP Advance bottom-drain pad.
Does TPW1500CNH support gate drive from a 3.3 V microcontroller?
No - the TPW1500CNH requires ≥10 V gate-source voltage for full enhancement and minimal RDS(ON). Its threshold voltage range is 2.0–4.0 V, but at 3.3 V VGS, RDS(ON) increases dramatically (typically >100 mΩ), causing excessive conduction loss. A dedicated gate driver or level-shifting circuit is required for reliable operation with 3.3 V logic.
What is the safe operating area (SOA) limitation for TPW1500CNH at 100 V VDS?
Per Figure 8.15, the TPW1500CNH's DC SOA at 100 V VDS limits continuous drain current to ≤12 A at Tc = 25 °C. For pulse durations ≤10 ms, the limit rises to ~30 A. Exceeding these boundaries risks thermal runaway or bond-wire fusing. Designers must verify SOA compliance under worst-case load and ambient conditions.
Is TPW1500CNH RoHS compliant and halogen-free?
Yes - TPW1500CNH meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4. Toshiba confirms this in its official environmental compliance documentation (Rev.4.0.A datasheet, page 10). Full material declarations and test reports are available upon request from Aetrix Electronics for qualifying customers.
Can TPW1500CNH be used in avalanche mode for inductive load switching?
Yes - the TPW1500CNH is rated for single-pulse avalanche energy of 198 mJ (typ.) at Tch = 25 °C. This enables controlled energy absorption during inductive turn-off events, such as motor phase commutation or relay de-energization. However, repetitive avalanche operation is not guaranteed and requires careful thermal and electrical validation per Toshiba's Reliability Handbook.
TPW1500CNH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15.4mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta), 142W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DSOP Advance
TPW1500CNH,L1Q FAQ
1.How can I place an order for TPW1500CNH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPW1500CNH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPW1500CNH,L1Q reliable?
The price and inventory of TPW1500CNH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPW1500CNH,L1Q is usually 5 days.
3.What payment methods are accepted for TPW1500CNH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPW1500CNH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPW1500CNH,L1Q?
TPW1500CNH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPW1500CNH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPW1500CNH,L1Q?
For technical support, including TPW1500CNH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPW1500CNH,L1Q requirements.
6.How does Aetrix verify that TPW1500CNH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPW1500CNH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPW1500CNH,L1Q meets industry standards.
7.What is the process for return or replacement of TPW1500CNH,L1Q?
All TPW1500CNH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPW1500CNH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPW1500CNH,L1Q part is unused and in its original packaging.
Return procedure for TPW1500CNH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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