Toshiba Semiconductor and Storage TPW2R508NH,L1Q

Overview

TPW2R508NH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-current, high-efficiency switching in primary-side DC-DC converters and synchronous rectification stages. It delivers R_DS(ON) = 2.0 mΩ (typ.) at V_GS = 10 V, Q_SW = 28 nC (typ.), and supports 150 A DC drain current with 75 V V_DSS, enabling compact, low-loss power stages in server VRMs and telecom PSUs.

For engineers reviewing the TPW2R508NH datasheet, TPW2R508NH pinout, TPW2R508NH application, or TPW2R508NH equivalent, this device is selected for high-frequency, high-current buck converter topologies where low conduction loss, fast switching, and thermal robustness under bottom-drain mounting are critical design requirements.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve ultra-low on-resistance while maintaining strong avalanche ruggedness (E_AS = 131 mJ) and controlled gate charge distribution. Its DSOP Advance package features exposed bottom-drain thermal pad and top-source terminals, optimizing heat transfer to PCB copper and minimizing source inductance.

The device operates in enhancement mode with V_th = 2.0–4.0 V, ensuring reliable turn-on with standard 10 V gate drivers, and exhibits low C_iss = 4600 pF (typ.) and Cr_ss = 50 pF (typ.) to reduce Miller-induced switching instability in hard-switched applications.

Key Specifications

Pinout & Package

TPW2R508NH is housed in the DSOP Advance surface-mount package (TOSHIBA designation: 2-5S1A), featuring an exposed bottom-drain thermal pad and top-side source/gate terminals for low-inductance, high-current routing and enhanced thermal performance on standard PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXFN180N10P and STL220N6F7, TPW2R508NH offers the lowest R_DS(ON) in a thermally optimized surface-mount package, making it optimal for space-constrained, high-efficiency 75 V-class power stages where PCB-level thermal management is prioritized over mechanical mounting flexibility.

Availability

TPW2R508NH is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TPW2R508NH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with emphasis on energy efficiency, reliability, and miniaturization for industrial, computing, and communications markets.

TPW2R508NH belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-frequency, high-current DC-DC conversion in data centers and 5G infrastructure where low R_DS(ON), fast switching, and robust thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for TPW2R508NH?

The TPW2R508NH is rated for 150 A DC drain current at T_c = 25 °C, limited by package thermal capacity rather than silicon capability. At elevated case temperatures, derating applies per the Safe Operating Area curve (Fig. 8.16); for example, at T_c = 100 °C, the practical limit drops to approximately 85 A. This rating assumes proper PCB thermal design with the bottom-drain pad fully soldered and thermally vias implemented.

Does TPW2R508NH support gate drive voltages below 10 V?

Yes - TPW2R508NH is an enhancement-mode MOSFET with V_th = 2.0–4.0 V, so it begins conducting at gate voltages above ~2.5 V. However, its specified R_DS(ON) of 2.0 mΩ is guaranteed only at V_GS = 10 V. At V_GS = 4.5 V, R_DS(ON) rises significantly (typically >6 mΩ), increasing conduction loss. For optimal efficiency, use 10 V gate drive; for logic-level compatibility, verify system efficiency trade-offs at reduced V_GS.

How is thermal performance affected by mounting configuration for TPW2R508NH?

TPW2R508NH's R_th(ch-c) = 0.88 °C/W is measured with the bottom-drain pad soldered to a large copper area on FR4. Mounting on glass-epoxy board (a) per Fig. 5.1 yields R_th(ch-a) = 50 °C/W; using board (b) per Fig. 5.2 increases it to 156 °C/W. To maximize thermal performance, implement ≥9 thermal vias (0.3 mm diameter) under the drain pad, connect to internal ground/power planes, and avoid isolating the thermal pad with solder mask.

Is TPW2R508NH suitable for synchronous rectification in LLC resonant converters?

Yes - TPW2R508NH is well-suited for synchronous rectification in LLC converters operating up to 1 MHz due to its low Q_SW = 28 nC and fast t_f = 15 ns (typ.). Its low Cr_ss = 50 pF minimizes capacitive turn-on delay, and the body diode's t_rr = 51 ns (typ.) supports zero-voltage switching (ZVS) transitions. Ensure gate drive timing accounts for body diode conduction period to avoid shoot-through.

What is the avalanche energy rating of TPW2R508NH and how is it tested?

TPW2R508NH has a single-pulse avalanche energy rating E_AS = 131 mJ, tested per JEDEC JESD24-11 with V_DD = 60 V, T_ch = 25 °C (initial), L = 7 µH, and I_AS = 120 A (Note 5). This rating confirms robustness against inductive switching transients in hard-switched topologies like buck converters and motor drives, but repeated avalanche events are not recommended - proper snubbing and layout remain essential.