Toshiba Semiconductor and Storage TPW5200FNH,L1Q

Overview

TPW5200FNH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-frequency switching in primary-side power conversion stages. It delivers 250 V V_DSS, 44 mΩ R_DS(ON) at V_GS = 10 V, and 8.2 nC Q_SW, enabling efficient operation in isolated DC-DC converters up to 100 kHz.

For engineers reviewing the TPW5200FNH datasheet, TPW5200FNH pinout, TPW5200FNH application, or TPW5200FNH equivalent, key selection criteria include its DSOP Advance package thermal performance (R_th(ch-c) = 0.88 °C/W), low gate charge for ZVS-compatible topologies, and guaranteed avalanche energy rating of 103 mJ - critical for flyback and resonant converter reliability validation.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve optimized trade-offs between conduction loss and switching loss. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures clean turn-on with standard 5 V or 10 V gate drivers, while the integrated body diode supports synchronous rectification and freewheeling paths in buck-derived topologies.

The device features bottom-drain thermal architecture and a 2-5S1A DSOP Advance package with exposed drain pad, enabling direct PCB copper pour attachment for low-impedance heat transfer. Its dynamic parameters - including C_iss = 1700 pF (typ.), C_oss = 140 pF (typ.), and t_r/t_f = 8/12 ns - are characterized under V_DD ≈ 100 V, supporting hard-switched and quasi-resonant designs.

Key Specifications

Pinout & Package

TPW5200FNH uses the DSOP Advance (TOSHIBA 2-5S1A) surface-mount package with bottom-exposed drain thermal pad. The 8-pin configuration provides parallelized source and drain terminals to reduce package inductance and improve current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP25NM50FD and IXTP50N10P, the TPW5200FNH uniquely balances 250 V rating, sub-50 mΩ on-resistance, and ultra-low gate charge in a thermally enhanced surface-mount package - making it irreplaceable in compact, high-efficiency offline flyback and LLC primary switches where voltage, loss, and thermal constraints intersect.

Availability

TPW5200FNH is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and isolated flyback power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for TPW5200FNH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon process innovation and reliability engineering.

The TPW5200FNH belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in consumer, industrial, and computing power supplies.

FAQ

What is the maximum continuous drain current rating for TPW5200FNH?

The TPW5200FNH has a DC drain current rating of 26 A at T_c = 25 °C. This value assumes ideal heatsinking via the bottom-drain pad; actual usable current depends on PCB copper area, ambient temperature, and airflow. At T_c = 100 °C, the derated ID drops to approximately 15 A per the Safe Operating Area curve in Figure 8.15. Always verify thermal design using the measured R_th(ch-c) = 0.88 °C/W value in your layout.

Does TPW5200FNH support avalanche operation in flyback designs?

Yes, the TPW5200FNH is fully specified for single-pulse avalanche with E_AS = 103 mJ (typ.) and I_AS = 26 A under defined test conditions (V_DD = 60 V, L = 250 µH). This rating is guaranteed per JEDEC JESD24-11 and enables robust snubberless flyback operation. However, repetitive avalanche is not rated - ensure transformer reset energy remains within this single-pulse limit during all operating modes.

What is the gate threshold voltage range for TPW5200FNH, and how does it affect drive requirements?

The TPW5200FNH has a V_th range of 2.0–4.0 V at V_DS = 10 V and I_D = 1.0 mA. This ensures reliable turn-on with standard 5 V logic or 10 V gate drivers while guaranteeing full turn-off at 0 V. Unlike depletion-mode devices, no negative gate bias is needed. For optimal R_DS(ON), apply V_GS ≥ 10 V - the datasheet specifies 44 mΩ only at that condition.

Can TPW5200FNH be used in synchronous rectification applications?

No, the TPW5200FNH is not recommended for synchronous rectification. Its body diode reverse recovery time (t_rr = 110 ns typ.) and reverse recovery charge (Q_rr = 420 nC typ.) are optimized for hard-switched primary-side use, not fast-recovery secondary-side switching. For SR applications, Toshiba offers dedicated low-Q_rr MOSFETs like the TPW8004PL, which feature tailored diode characteristics and tighter t_rr tolerance.

What is the thermal resistance from channel to case (R_th(ch-c)) for TPW5200FNH, and how should it be applied in thermal design?

The TPW5200FNH has R_th(ch-c) = 0.88 °C/W (max) for the bottom-drain configuration. This value applies only when the exposed drain pad is soldered to a minimum 100 mm² copper pour on the PCB layer beneath the package. Do not use R_th(ch-a) = 50 °C/W for system-level thermal modeling - it reflects worst-case natural convection and is irrelevant for properly mounted units. Always validate junction temperature using T_j = T_c + (P_diss × 0.88).