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Taiwan Semiconductor Corporation TSM045NB06CR RLG
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- Part No.:
- TSM045NB06CR RLG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerLDFN
- Datasheet:
-
TSM045NB06CR RLG.pdf
- Description:
- MOSFET N-CH 60V 16A/104A 8PDFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
TSM045NB06CR from Taiwan Semiconductor is an N-channel power MOSFET designed for high-current, low-loss switching in power conversion stages. It delivers 60 V VDS, 104 A continuous drain current at TC = 25°C, and a maximum RDS(on) of 5 mΩ at VGS = 10 V - enabling efficient BLDC motor control and synchronous rectification in compact industrial power supplies.
For engineers reviewing the TSM045NB06CR datasheet, TSM045NB06CR pinout, TSM045NB06CR application, or TSM045NB06CR equivalent, key selection criteria include its 1.1 °C/W junction-to-case thermal resistance, 104 nC total gate charge, 175°C maximum junction temperature, and PDFN56 package suitability for high-power density PCB layouts with thermal pad grounding.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 4.5–5 mΩ RDS(on) (typ/max at VGS = 10 V, ID = 16 A) and 104 nC Qg support high-frequency DC-DC operation up to several hundred kHz while maintaining low drive power requirements.
The device features fully characterized dynamic parameters including Ciss = 6870 pF, Coss = 395 pF, and Crss = 126 pF at VDS = 30 V, along with validated avalanche capability (EAS = 194 mJ, IAS = 36 A), making it suitable for hard-switched topologies requiring robustness against transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 24 V industrial rails. |
| RDS(on) max | 5 mΩ at VGS = 10 V - Enables ≤0.5 W conduction loss at 10 A, critical for thermally constrained motor drive H-bridges. |
| ID continuous | 104 A at TC = 25°C - Supports high-current phase legs in 3-phase BLDC inverters without parallel devices. |
| Qg | 104 nC - Determines gate driver current requirement (~1 A peak for 100 ns turn-on with 2 Ω gate resistor). |
| RθJC | 1.1 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad; enables >100 W dissipation with modest heatsinking. |
| TJ max | +175°C - Permits operation in sealed enclosures or high-ambient environments such as automotive under-hood or industrial motor drives. |
Pinout & Package
Package: PDFN56 (5.0 × 6.0 mm, 0.95 mm height), thermally enhanced with exposed drain pad on bottom side. MSL Level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to exposed copper pad - must be soldered to large PCB thermal plane for RθJC performance. |
| Source (S) | Reference node for gate drive and current sensing | Four source pins (two on each side) reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| Gate (G) | Control input for channel modulation | Single gate pin with 0.5–3.6 Ω internal gate resistance - limits ringing but requires adequate driver strength for 104 nC charge. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees single-pulse avalanche energy handling up to 194 mJ - eliminates need for external snubbers in flyback or boost converters. |
| Low Qgd/Qg ratio | 24/104 nC = 0.23 - improves hard-switching immunity and reduces Miller-induced shoot-through risk in half-bridge configurations. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and EU Directive 2011/65/EU - supports environmentally regulated industrial and consumer product certifications. |
| Body diode trr | 30 ns with Qrr = 31 nC - enables efficient synchronous rectification in LLC and phase-shifted full-bridge topologies without external Schottky replacement. |
Applications
| BLDC Motor Control | Battery Power Management |
|---|---|
Use Scenario: 3-phase inverter stage in cordless power tools or e-bike controllers operating from 36–48 V battery packs. IC Role / Device Role / Timing Role: High-side and low-side switching element in each leg, driven by gate drivers with 10–15 V logic-level signals. Use Value: 5 mΩ RDS(on) minimizes I²R losses during 30–100 A peak phase currents, extending runtime and reducing thermal derating. | Use Scenario: Load switch or protection FET in portable medical devices or ruggedized handheld instruments with Li-ion battery inputs. IC Role / Device Role / Timing Role: Reverse polarity and overcurrent protection switch placed between battery connector and system PMIC. Use Value: 104 A rating and 175°C TJ allow safe operation during short-circuit events without thermal shutdown or latch-up. |
| DC-DC Converter | Secondary Synchronous Rectification |
Use Scenario: Primary-side switch in isolated 60 W–200 W flyback or forward converters for industrial IoT gateways. IC Role / Device Role / Timing Role: Main switching transistor controlled by PWM controller with gate drive voltage ≥10 V. Use Value: 104 nC Qg and 1.1 °C/W RθJC enable stable 200 kHz operation with <1.5 W switching+conduction loss at full load. | Use Scenario: Secondary-side rectifier in 12 V/24 V output telecom PSUs using active clamp forward or LLC resonant topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled or controller-synchronized gate signal. Use Value: 1 V VSD body diode and 30 ns trr reduce reverse recovery loss, improving efficiency by 1.2–1.8% over 45 V Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP045N06N | RDS(on) = 4.5 mΩ (typ), Qg = 92 nC, same PDFN56 package | Slightly lower gate charge improves switching efficiency above 300 kHz; identical thermal footprint | Preferred for ultra-high-frequency SMPS where gate drive loss dominates |
| Vishay SI7850DP-T1-GE3 | RDS(on) = 5.2 mΩ (max), Qg = 110 nC, same 5×6 mm outline but different pin assignment | Higher RDS(on) increases conduction loss; not pin-compatible due to G/S/D layout variation | Acceptable for cost-sensitive designs with margin in thermal budget and lower switching frequency |
Compared with IPP045N06N and SI7850DP-T1-GE3, the TSM045NB06CR offers balanced conduction-switching trade-off (5 mΩ / 104 nC) and guaranteed UIS testing - making it optimal for motor control and industrial DC-DC where reliability under overload transients is prioritized over marginal gate loss reduction.
Availability
TSM045NB06CR is available at Aetrix Electronics and suitable for BLDC motor control, battery power management, and DC-DC converter applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.
Supply support for TSM045NB06CR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1992.
The TSM045NB06CR belongs to TSC's high-current N-channel TrenchMOS™ family, engineered specifically for high-efficiency power conversion in space-constrained motor drives and battery-powered systems where thermal robustness and avalanche reliability are mandatory.
FAQ
What is the maximum continuous drain current rating for TSM045NB06CR at 125°C case temperature?
The TSM045NB06CR supports 45 W total power dissipation at TC = 125°C, which - combined with its 5 mΩ RDS(on) - yields a practical continuous drain current limit of approximately 95 A under forced-air cooling with adequate heatsinking. This derating ensures safe operation within the SOA curve while maintaining junction temperature below 175°C.
Does TSM045NB06CR require a negative gate voltage for reliable turn-off in high-noise environments?
No, the TSM045NB06CR has a gate threshold voltage range of 2–4 V and is fully specified for 0 V turn-off. While applying –5 V enhances noise immunity in EMI-heavy motor drive applications, it is not required for functional operation. The device's ±20 V VGS rating allows use of standard 0–12 V or 0–15 V gate drivers without level-shifting circuitry.
Can TSM045NB06CR be used in parallel configurations without current-sharing resistors?
Yes - the TSM045NB06CR exhibits positive RDS(on) temperature coefficient above 25°C, enabling inherent current balancing when paralleled. However, matched gate drive routing and symmetrical PCB layout (equal trace length/impedance to each gate) are essential. For >2 devices in parallel, individual 1–2 Ω gate resistors are recommended to dampen oscillation and ensure simultaneous switching.
What is the recommended minimum gate resistor value for driving TSM045NB06CR at 200 kHz in a half-bridge configuration?
With 104 nC Qg and typical gate driver output impedance of ~1 Ω, a 2.2 Ω external gate resistor provides optimal trade-off: limiting peak gate current to ~4.5 A (within most drivers' capability), suppressing ringing, and achieving ~15 ns effective rise/fall times. This value maintains switching loss below 0.8 W per transition while avoiding excessive delay in dead-time-critical half-bridge operation.
Is the TSM045NB06CR suitable for use as a synchronous rectifier in a 12 V output LLC resonant converter?
Yes - the TSM045NB06CR is well-suited for this role. Its 1 V body diode forward voltage, 30 ns reverse recovery time, and 31 nC Qrr minimize commutation loss, while its 5 mΩ RDS(on) reduces conduction loss to <120 mW at 20 A DC. When driven with precise timing relative to the resonant tank zero-voltage crossing, the TSM045NB06CR achieves >98.2% secondary-side efficiency versus ~96.5% with Schottky diodes.
TSM045NB06CR RLG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 104 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6870 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PDFN (5.2x5.75)
TSM045NB06CR RLG FAQ
1.How can I place an order for TSM045NB06CR RLG through Aetrix?
Please submit a Request for Quotation (RFQ) for TSM045NB06CR RLG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TSM045NB06CR RLG reliable?
The price and inventory of TSM045NB06CR RLG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TSM045NB06CR RLG is usually 5 days.
3.What payment methods are accepted for TSM045NB06CR RLG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TSM045NB06CR RLG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TSM045NB06CR RLG?
TSM045NB06CR RLG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TSM045NB06CR RLG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TSM045NB06CR RLG?
For technical support, including TSM045NB06CR RLG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TSM045NB06CR RLG requirements.
6.How does Aetrix verify that TSM045NB06CR RLG is sourced from the original manufacturer or authorized distributors?
All TSM045NB06CR RLG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TSM045NB06CR RLG meets industry standards.
7.What is the process for return or replacement of TSM045NB06CR RLG?
All TSM045NB06CR RLG units undergo pre-shipment inspection (PSI). If there is an issue with TSM045NB06CR RLG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TSM045NB06CR RLG part is unused and in its original packaging.
Return procedure for TSM045NB06CR RLG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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