Taiwan Semiconductor Corporation TSM300NB06LCV RGG

Overview

TSM300NB06LCV from Taiwan Semiconductor is an N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and BLDC motor control. It delivers 60 V drain-source voltage rating, 24 A continuous drain current at TC = 25°C, 30 mΩ R_DS(on) at V_GS = 10 V, and features logic-level gate drive compatibility with 4.5 V threshold operation.

For engineers reviewing the TSM300NB06LCV datasheet, TSM300NB06LCV pinout, TSM300NB06LCV application, or TSM300NB06LCV equivalent, key selection criteria include its 8 nC gate charge at 4.5 V drive, 3.2 °C/W junction-to-case thermal resistance, PDFN33 package footprint, and 100% UIS-tested ruggedness for reliable synchronous rectification and battery power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 1.8 V typical gate threshold voltage enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.

The device integrates a robust body diode with 1.2 V forward voltage at 5 A and 16 ns reverse recovery time, supporting efficient synchronous rectification and freewheeling in buck and half-bridge topologies under hard-switching conditions.

Key Specifications

Pinout & Package

Package: PDFN33 (Power Dual Flat No-lead, 3.3 mm × 3.3 mm, 0.9 mm height), exposed drain pad for thermal and electrical connection. MSL Level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC030N06NS3 and SiR626DP, the TSM300NB06LCV offers the optimal balance of 4.5 V logic compatibility, 8 nC gate charge, and 39 mΩ on-resistance-making it uniquely suited for space-constrained, low-voltage-gate-driven applications like portable BLDC inverters and battery protection circuits where driver simplicity and thermal efficiency are jointly critical.

Availability

TSM300NB06LCV is available at Aetrix Electronics and suitable for BLDC motor control, battery power management, and DC-DC converter designs requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for TSM300NB06LCV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1992.

The TSM300NB06LCV belongs to TSC's "NB" series of low-R_DS(on), logic-level N-channel MOSFETs engineered specifically for high-efficiency, high-density power conversion and motor drive applications in compact portable and battery-powered systems.

FAQ

What is the maximum continuous drain current for TSM300NB06LCV at 125°C case temperature?

The TSM300NB06LCV supports 8 A continuous drain current when the case temperature is maintained at 125°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PDFN33 package and must be verified using actual board layout and airflow conditions. The device's 3.2 °C/W R_θJC enables accurate junction temperature calculation: T_J = T_C + P_DM × 3.2. For sustained 8 A operation, ensure adequate copper area and thermal vias beneath the exposed drain pad.

Does TSM300NB06LCV support 3.3 V microcontroller gate drive without a level shifter?

Yes, the TSM300NB06LCV is explicitly characterized for logic-level operation with R_DS(on) = 39 mΩ at V_GS = 4.5 V and V_GS(th) ranging from 1.0 V to 2.5 V. Its 1.8 V typical threshold ensures reliable turn-on with 3.3 V GPIOs, and its low 8 nC gate charge minimizes driver loading. However, gate resistor selection (e.g., 2–10 Ω) remains essential to control dv/dt and prevent oscillation during switching transitions in the TSM300NB06LCV.

What is the avalanche energy rating of TSM300NB06LCV and how is it tested?

The TSM300NB06LCV is rated for 22 mJ single-pulse avalanche energy (E_AS) under test conditions of L = 0.3 mH, V_DD = 30 V, I_AS = 12 A, and starting T_J = 25°C. Each unit undergoes 100% UIS (unclamped inductive switching) testing per JEDEC standards, verifying ruggedness against inductive kickback in motor and relay driving applications. This rating applies only to single-pulse events-not repetitive avalanche-and must be validated in-system with appropriate snubbing and thermal management for the TSM300NB06LCV.

Is the TSM300NB06LCV halogen-free and RoHS compliant?

Yes, the TSM300NB06LCV meets both RoHS Directive 2011/65/EU requirements and IEC 61249-2-21 for halogen-free printed wiring board materials. Its packaging, mold compound, and internal metallization contain no brominated flame retardants, chlorine, or fluorine above threshold limits. Compliance documentation-including material declarations and test reports-is available upon request for the TSM300NB06LCV to support environmental certification of end products.

What is the recommended PCB pad layout for thermal performance of TSM300NB06LCV?

Taiwan Semiconductor specifies a 1 in² (25.4 mm²) 2 oz copper pad connected to the exposed drain terminals via ≥9 thermal vias (0.3 mm diameter, 0.6 mm pitch) for optimal R_θJA = 65 °C/W. The suggested pad layout in the datasheet (Page 5) defines exact dimensions and solder mask openings to maximize solder wetting and mechanical reliability. Deviations-such as smaller pads or fewer vias-will increase junction temperature and reduce safe operating area for the TSM300NB06LCV, especially under continuous 24 A load conditions.