Taiwan Semiconductor Corporation TSM900N06CP ROG

Overview

TSM900N06CP from Taiwan Semiconductor is an N-channel power MOSFET rated for 60V drain-source voltage, 11A continuous drain current at T_C = 25°C, and 90mΩ R_DS(on) at V_GS = 10V. It features logic-level gate drive (V_GS(th) = 1.2–2.5V), fast switching (t_d(on) = 6.7ns, t_f = 1.8ns), and is optimized for DC-DC converters and motor/solenoid drivers.

For engineers reviewing the TSM900N06CP datasheet, TSM900N06CP pinout, TSM900N06CP application, or TSM900N06CP equivalent, key selection criteria include its 4.5V-rated R_DS(on) of 100mΩ, 9.5nC total gate charge, TO-252 package thermal resistance (R_θJC = 5°C/W), and UIS-tested ruggedness - all critical for high-efficiency, space-constrained power stages.

Technical Context

The TSM900N06CP operates as a unidirectional, enhancement-mode N-channel switch with a breakdown voltage of 60V and a gate threshold voltage range of 1.2–2.5V, enabling direct interface with 3.3V/5V microcontrollers. Its dynamic parameters - including C_iss = 553.4pF, Q_gd = 1.4nC, and low reverse recovery charge (Q_rr = 7.7nC) - support high-frequency synchronous rectification and hard-switched topologies.

Thermally, it delivers 25W power dissipation at T_C = 25°C with R_θJC = 5°C/W, and its SOA curve supports single-pulse avalanche energy of 25mJ (L = 1mH). The body diode exhibits V_SD = 1.2V at I_S = 1A and t_rr = 12.5ns under specified di/dt conditions.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP90NF06L and IRLZ44NPBF, the TSM900N06CP uniquely balances logic-level drive (≤2.5V V_GS(th)), verified UIS ruggedness, and TO-252 thermal performance - making it optimal for compact, high-reliability 4.5V–10V gate-driven power stages where layout space and avalanche immunity are constrained.

Availability

TSM900N06CP is available at Aetrix Electronics and suitable for DC-DC converters, solenoid drivers, and motor control applications requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for TSM900N06CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1992.

The TSM900N06CP belongs to TSC's logic-level N-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in 3.3V/5V-controlled systems - emphasizing ruggedness, low gate charge, and thermally efficient DPAK packaging.

FAQ

What is the maximum continuous drain current for the TSM900N06CP at 100°C case temperature?

The TSM900N06CP supports 7A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the –55°C to +150°C junction temperature range. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100°C under full load. The TSM900N06CP datasheet confirms this value under Note 1: "Limited by maximum junction temperature."

Does the TSM900N06CP have avalanche capability, and is it tested?

Yes, the TSM900N06CP is 100% UIS (Unclamped Inductive Switching) tested per datasheet Feature list and Absolute Maximum Ratings. It guarantees single-pulse avalanche energy of 25mJ (E_AS) with L = 1mH, V_GS = 10V, and R_G = 25Ω at T_J = 25°C. This validated ruggedness allows reliable use in solenoid, relay, and motor drive circuits without external clamping components. The TSM900N06CP specification explicitly references this test in Note 3.

What is the gate threshold voltage range for the TSM900N06CP, and how does it support logic-level operation?

The TSM900N06CP has a gate threshold voltage (V_GS(th)) range of 1.2V to 2.5V at I_D = 250µA, confirming true logic-level compatibility. This allows full enhancement with 3.3V or 5V microcontroller outputs without level-shifting. At V_GS = 4.5V, it achieves R_DS(on) = 100mΩ - a key design value verified in Electrical Characteristics. The TSM900N06CP thus supports direct GPIO drive in battery-powered and low-voltage control systems.

Can the TSM900N06CP be used in synchronous rectification applications?

Yes, the TSM900N06CP is suitable for synchronous rectification due to its low R_DS(on) (90mΩ @ 10V), fast switching (t_r = 2.8ns, t_f = 1.8ns), and low Q_gd = 1.4nC - all reducing conduction and switching losses. Its body diode has V_SD = 1.2V and t_rr = 12.5ns, enabling efficient reverse recovery in buck and flyback topologies. The TSM900N06CP datasheet provides gate-charge and capacitance curves essential for gate driver timing design.

What is the moisture sensitivity level (MSL) rating for the TSM900N06CP?

The TSM900N06CP is rated MSL Level 3 per J-STD-020, meaning it may be stored for up to 168 hours (7 days) at ≤30°C/60% RH before reflow. This applies to its TO-252 (DPAK) package and requires standard baking protocols if floor life is exceeded. The MSL rating is explicitly noted in the Product Summary section of the TSM900N06CP datasheet and impacts assembly planning for high-volume SMT lines.