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Toshiba Semiconductor and Storage TW015Z120C,S1F
- Part No.:
- TW015Z120C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
TW015Z120C,S1F.pdf
- Description:
- G3 1200V SIC-MOSFET TO-247-4L 1
- Quantity:
- Payment:
- Shipping:
Inventory:68
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Product details
Overview
TW015Z120C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage switching in industrial DC-DC converters and motor drives. It delivers 1200 V drain-source breakdown voltage, 15 mΩ typical RDS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates with gate threshold voltage of 3.0–5.0 V.
For engineers reviewing the TW015Z120C,S1F datasheet, TW015Z120C,S1F pinout, TW015Z120C,S1F application, or TW015Z120C,S1F equivalent, key selection considerations include its TO-247-4L(X) package with dedicated gate-return source pin (Pin 2), low switching losses (Eon = 1079 µJ, Eoff = 420 µJ at 800 V/50 A), and thermal resistance of 0.348 °C/W (ch-to-case).
Technical Context
This third-generation SiC MOSFET integrates a co-packaged SiC Schottky barrier diode to eliminate reverse recovery losses and enable bidirectional current handling in bridge topologies. Its enhancement-mode operation, high Vth (3.0–5.0 V), and recommended ±0/18 V gate drive suppress false turn-on under dV/dt stress.
The device uses a 4-pin TO-247-4L(X) configuration where Pin 1 is drain (heatsink tab), Pin 2 is source 2 (gate return only), Pin 3 is source 1 (main current return), and Pin 4 is gate - enabling Kelvin-source sensing for stable RDS(ON) control across temperature and load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports 800 V bus designs with 1.5× safety margin for transient overvoltage in industrial UPS and solar inverters. |
| RDS(ON) | 15 mΩ (typ.) at VGS = 18 V, Tc = 25 °C - enables <1.2 W conduction loss at 50 A, reducing heatsink size in high-power SMPS. |
| VDSF | −1.35 V (typ.) - SiC SBD forward drop minimizes body-diode conduction loss during hard commutation in totem-pole PFC. |
| Eon/Eoff | 1079 µJ / 420 µJ at VDD ≈ 800 V, ID = 50 A - low total switching energy allows >100 kHz operation without excessive gate drive power. |
| Rth(ch-c) | 0.348 °C/W - enables direct mounting to cold plates for 100 A continuous drain current capability at Tc = 100 °C. |
| Qg | 158 nC - defines minimum gate driver peak current requirement (~33 A for 4.7 Ω gate resistor, 10 ns rise time). |
| Vth | 3.0–5.0 V - high threshold improves noise immunity in noisy industrial environments and eliminates need for negative gate bias. |
Pinout & Package
Package: TO-247-4L(X), also designated 2-16M3A by Toshiba; thermally optimized 4-lead through-hole package with isolated gate-source Kelvin connection and metal tab (Pin 1) for direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main high-side current path and thermal interface | Electrically connected to heatsink; must be insulated from PCB ground plane unless system design requires common-drain topology. |
| 2 (Source 2) | Dedicated gate return path | Connects only to gate driver ground to eliminate source inductance impact on gate loop; not rated for main current. |
| 3 (Source 1) | Main source current return | Carries full load current (100 A DC); must be routed with low-inductance, wide copper pour to minimize VDS overshoot. |
| 4 (Gate) | Control input terminal | Driven with 0 V / +18 V logic; requires low-impedance gate resistor (4.7 Ω typical) to damp ringing and control dV/dt. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC Schottky body diode | Eliminates reverse recovery charge (Qrr = 594 nC) and associated EMI in hard-switched topologies like phase-shifted full-bridge. |
| 4-pin Kelvin-source configuration | Separates gate return (Pin 2) from power return (Pin 3), stabilizing VGS during high di/dt switching and improving RDS(ON) accuracy. |
| High gate threshold voltage | 3.0–5.0 V range prevents spurious turn-on from noise or Miller coupling, enabling robust operation without negative gate bias circuitry. |
| Low effective output capacitance | Coss(er) = 289 pF at 800 V - reduces capacitive turn-on loss and improves zero-voltage switching (ZVS) feasibility in resonant converters. |
| Enhancement-mode operation | Ensures default-off state at power-up, supporting fail-safe behavior in safety-critical power supplies and EV charging systems. |
Applications
| Industrial Solar Inverters | Server PSU DC-DC Converters |
|---|---|
Use Scenario: High-efficiency 1500 V string inverters using three-level NPC or T-type topologies operating at 50–100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side SiC MOSFET in bidirectional half-bridge leg, leveraging integrated body diode for freewheeling and low Qrr to reduce thermal stress. Use Value: Enables >99% peak efficiency with 30% smaller magnetics versus Si IGBTs, while maintaining 175 °C channel temperature rating. | Use Scenario: 48 V–12 V intermediate bus converters in AI server racks requiring >100 A output current and <1% voltage regulation. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch in interleaved LLC resonant converter, using Kelvin-source pins to maintain precise RDS(ON) control. Use Value: Reduces conduction loss by 42% vs. comparable 20 mΩ Si MOSFET, lowering junction temperature rise by 22 °C at full load. |
| EV Onboard Chargers (OBC) | Industrial UPS Systems |
Use Scenario: Bidirectional AC/DC and DC/DC stages in 11 kW OBCs complying with ISO 15118 and GB/T 18487.1 standards. IC Role / Device Role / Timing Role: Switching element in totem-pole PFC front-end, where integrated SiC SBD conducts reverse current during dead-time without reverse recovery. Use Value: Achieves >98.5% PFC efficiency at 230 VAC input and eliminates snubber circuits, reducing BOM count by 7 components per phase. | Use Scenario: Double-conversion online UPS units delivering clean 230 VAC output with <2 ms transfer time and 150 kVA capacity. IC Role / Device Role / Timing Role: Inverter-stage switching device in IGBT replacement retrofit, operating in 6–16 kHz PWM mode with active thermal management. Use Value: Cuts switching losses by 65% versus 1200 V IGBTs, allowing 40% higher power density and eliminating forced-air cooling fans. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0015120K (Wolfspeed) | Same VDSS (1200 V), slightly higher RDS(ON) (18 mΩ), TO-247-4L package, no integrated SBD | Requires external SiC SBD for bidirectional conduction; higher VF (−1.7 V) increases conduction loss in PFC | Select when external diode placement offers layout flexibility or when gate drive compatibility with legacy Wolfspeed drivers is required. |
| STW48N120DV2 (STMicroelectronics) | 1200 V, 18 mΩ RDS(ON), TO-247-4L, integrated SiC SBD with VDSF = −1.5 V, lower Qg (120 nC) | Slightly higher diode forward voltage increases conduction loss at light loads; lower Qg eases gate drive design | Prefer for space-constrained designs needing reduced gate drive power, accepting minor efficiency trade-off in high-current freewheeling. |
Compared with C3M0015120K and STW48N120DV2, the TW015Z120C,S1F provides the lowest RDS(ON) and best diode forward voltage among 1200 V SiC MOSFETs in TO-247-4L, making it optimal for high-current, high-efficiency applications where thermal headroom is limited.
Availability
TW015Z120C,S1F is available at Aetrix Electronics and suitable for industrial solar inverters, EV onboard chargers, and high-density server power supplies requiring stable component supply and long-term production continuity.
Supply support for TW015Z120C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on reliability, efficiency, and industrial-grade performance.
The TW015Z120C,S1F belongs to Toshiba's third-generation SiC power MOSFET product line, engineered specifically for high-voltage, high-frequency switching applications in renewable energy, electric mobility, and datacenter infrastructure.
FAQ
What is the maximum continuous drain current rating for the TW015Z120C,S1F at case temperature of 100 °C?
The TW015Z120C,S1F supports 81 A DC drain current at Tc = 100 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking with thermal resistance ≤0.348 °C/W and adherence to derating guidelines in Toshiba's Reliability Handbook. Exceeding this current without thermal margin risks accelerated parametric drift or catastrophic failure.
Does the TW015Z120C,S1F require negative gate voltage for reliable turn-off?
No, the TW015Z120C,S1F does not require negative gate voltage for turn-off. Its enhancement-mode operation and high gate threshold voltage (3.0–5.0 V) ensure stable off-state behavior with 0 V gate-source bias. Toshiba specifies VGS(off) = 0 V, and applying negative voltage may exceed the −10 V limit of the gate-source rating and degrade long-term reliability.
How does the integrated SiC Schottky diode in the TW015Z120C,S1F improve system efficiency compared to discrete diode solutions?
The integrated SiC Schottky diode in the TW015Z120C,S1F eliminates reverse recovery charge (Qrr) and associated switching losses, reducing EMI and thermal stress. With VDSF = −1.35 V (typ.), it achieves lower conduction loss than discrete SiC diodes (typically −1.5 to −1.8 V), directly improving efficiency in totem-pole PFC and bidirectional DC-DC converters where body-diode conduction is frequent.
What is the recommended gate resistor value for the TW015Z120C,S1F in a 100 kHz hard-switched application?
Toshiba recommends a 4.7 Ω gate resistor for the TW015Z120C,S1F in standard hard-switched applications, as validated in the switching loss test conditions (RG2 = 4.7 Ω). This value balances switching speed (td(on) = 40 ns, tf = 24 ns) against gate oscillation and voltage overshoot. For 100 kHz operation, this resistor yields ~33 A peak gate current and maintains dV/dt within safe limits (<50 V/ns) under typical layout parasitics.
Can the TW015Z120C,S1F be used in parallel configurations for higher current handling?
Yes, the TW015Z120C,S1F supports paralleling due to its positive temperature coefficient of RDS(ON) (confirmed in Fig. 8.7), which promotes current sharing across devices. Successful paralleling requires matched gate drive loops, symmetrical PCB layout, Kelvin-source routing for each device, and individual gate resistors. Toshiba's application notes confirm stable parallel operation up to 4 devices in 3-phase inverter legs.
TW015Z120C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 158 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6000 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 431W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-4L(X)
TW015Z120C,S1F FAQ
1.How can I place an order for TW015Z120C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW015Z120C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW015Z120C,S1F reliable?
The price and inventory of TW015Z120C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW015Z120C,S1F is usually 5 days.
3.What payment methods are accepted for TW015Z120C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW015Z120C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW015Z120C,S1F?
TW015Z120C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW015Z120C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW015Z120C,S1F?
For technical support, including TW015Z120C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW015Z120C,S1F requirements.
6.How does Aetrix verify that TW015Z120C,S1F is sourced from the original manufacturer or authorized distributors?
All TW015Z120C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW015Z120C,S1F meets industry standards.
7.What is the process for return or replacement of TW015Z120C,S1F?
All TW015Z120C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW015Z120C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW015Z120C,S1F part is unused and in its original packaging.
Return procedure for TW015Z120C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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