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Toshiba Semiconductor and Storage TW030Z120C,S1F
- Part No.:
- TW030Z120C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
TW030Z120C,S1F.pdf
- Description:
- G3 1200V SIC-MOSFET TO-247-4L 3
- Quantity:
- Payment:
- Shipping:
Inventory:105
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Product details
Overview
TW030Z120C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET with integrated Schottky barrier diode, rated for 1200 V drain-source voltage and 30 mΩ typical on-resistance at 18 V gate drive, designed for high-efficiency switching voltage regulators in industrial and renewable energy systems.
For engineers reviewing the TW030Z120C,S1F datasheet, TW030Z120C,S1F pinout, TW030Z120C,S1F application, or TW030Z120C,S1F equivalent, key selection criteria include its 175 °C channel temperature rating, low 1.35 V diode forward voltage, TO-247-4L(X) package with dedicated gate-return source pin, and third-generation SiC chip architecture enabling reduced switching losses in hard-switched topologies.
Technical Context
The TW030Z120C,S1F implements an enhancement-mode SiC MOSFET structure with built-in body diode, featuring a 3.0–5.0 V gate threshold voltage to reduce susceptibility to false turn-on during high dv/dt transients. Its 4.7 Ω recommended gate resistance and 82 nC total gate charge support controlled turn-on/turn-off timing in high-frequency converters.
Thermal design is enabled by 0.602 °C/W channel-to-case thermal resistance and 175 °C maximum channel temperature, while the TO-247-4L(X) package separates gate return (Source 2) from main current path (Source 1) to minimize source inductance and improve gate control stability under high di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports DC-link voltages up to 1000 V in three-phase inverters and HVDC applications |
| RDS(ON) | 30 mΩ (typ.) at VGS = 18 V - enables low conduction loss at 30 A continuous drain current |
| Vth | 3.0–5.0 V - provides noise immunity against spurious gate triggering in noisy EMI environments |
| VDSF | −1.35 V (typ.) - reduces reverse recovery losses compared to discrete Si diodes in synchronous rectification |
| Qg | 82 nC (typ.) - determines gate driver power requirement and switching speed trade-off at 100 kHz operation |
| Rth(ch-c) | 0.602 °C/W - allows direct heatsink mounting with minimal thermal interface resistance for 249 W dissipation |
| ID (Tc=25°C) | 60 A - defines maximum continuous current capability with adequate heatsinking |
Pinout & Package
Package: TO-247-4L(X), also designated TOSHIBA 2-16M3A, with isolated gate-return terminal and heatsink-connected drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main power output terminal / heatsink connection | Electrically connected to metal tab; must be mounted to heatsink for thermal management and electrical reference |
| 2 (Source 1) | Main current return path | Carries full load current; connects to low-side return node in half-bridge configurations |
| 3 (Source 2) | Gate drive signal return | Dedicated low-inductance return for gate driver loop; must not carry main current to avoid gate oscillation |
| 4 (Gate) | Control input | Receives 0 V / 18 V PWM signal; requires external 4.7 Ω series resistor per datasheet recommendation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC SBD | Eliminates need for external anti-parallel diode in bridge legs, reducing component count and layout area |
| High Vth range | 3.0–5.0 V threshold ensures robust immunity to gate ringing and cross-conduction in high-speed switching |
| Low Qrr & trr | 358 nC reverse recovery charge and 55 ns recovery time minimize commutation losses in ZVS and hard-switched PFC stages |
| Enhancement mode | Guarantees normally-off operation for fail-safe behavior in power supply and motor drive fault conditions |
| TO-247-4L isolation | Separate Source 2 pin enables Kelvin-source gate drive, improving switching consistency across temperature and current ranges |
Applications
| Industrial Switching Power Supplies | Solar Inverters |
|---|---|
Use Scenario: High-efficiency 3–10 kW AC/DC front-end converters operating at 50–100 kHz with active clamp or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge configuration handling 800 V DC-link voltage. Use Value: 30 mΩ RDS(ON) and 1.35 V VDSF reduce conduction and reverse recovery losses, improving system efficiency by ≥1.2% over comparable Si MOSFETs. | Use Scenario: String-level MPPT boost converters in central and string inverters for utility-scale photovoltaic plants. IC Role / Device Role / Timing Role: Boost switch operating at 30–60 kHz with 1000 V DC-link and 30 A peak current. Use Value: 1200 V VDSS rating and 175 °C Tch enable reliable operation under high-voltage transients and ambient temperatures up to 70 °C. |
| EV Onboard Chargers | Energy Storage Systems |
Use Scenario: Bidirectional AC/DC converter stage in 11 kW OBCs supporting both grid-to-battery and vehicle-to-grid modes. IC Role / Device Role / Timing Role: Half-bridge leg switch in dual-active-bridge topology with 800 V battery interface. Use Value: Low 82 nC Qg and 4.3 nF Crss support fast, low-loss switching transitions required for high-frequency bidirectional power transfer. | Use Scenario: DC/DC isolation stage in modular battery energy storage systems (BESS) interfacing 1500 V battery strings with 400 V distribution bus. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge DC/DC converter operating at 100 kHz. Use Value: 0.602 °C/W Rth(ch-c) and 249 W PD rating allow compact thermal design without forced air cooling in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0030120K (Wolfspeed) | Same 1200 V/30 mΩ rating but uses standard TO-247-3L; no dedicated gate-return source pin | Requires external Kelvin-source layout or gate driver compensation for high-di/dt stability | Select when board space constraints favor simpler 3-pin layout and gate drive design tolerates higher source inductance |
| STW48N120K5 (STMicroelectronics) | 1200 V/35 mΩ; higher RDS(ON); 2.5 V lower Vth (2.5–4.5 V); same TO-247-4L package | Lower gate threshold increases risk of spurious turn-on in high-noise industrial environments | Select when cost sensitivity outweighs need for highest noise immunity and lowest conduction loss |
Compared with C3M0030120K and STW48N120K5, the TW030Z120C,S1F delivers superior gate control stability via its dedicated Source 2 pin and tighter Vth window, making it preferred for high-reliability, high-di/dt applications where layout-induced oscillation must be minimized without added compensation components.
Availability
TW030Z120C,S1F is available at Aetrix Electronics and suitable for industrial switching power supplies, solar inverters, EV onboard chargers, and energy storage systems requiring stable component supply and long-term production continuity.
Supply support for TW030Z120C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.
The TW030Z120C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-voltage, high-frequency switching applications in renewable energy, industrial automation, and electric transportation infrastructure.
FAQ
What is the recommended gate drive voltage for the TW030Z120C,S1F?
The TW030Z120C,S1F specifies a recommended gate-source drive voltage of +18 V for turn-on and 0 V for turn-off. This 18 V level ensures full enhancement and minimizes RDS(ON) across temperature, while staying within the ±25 V absolute maximum gate-source voltage rating. Operating below 15 V may increase conduction losses due to incomplete turn-on, especially at elevated temperatures.
Does the TW030Z120C,S1F have an integrated body diode, and how does it perform?
Yes, the TW030Z120C,S1F integrates a silicon carbide Schottky barrier diode with a typical forward voltage of −1.35 V at 25 °C. This diode exhibits low reverse recovery charge (358 nC) and fast recovery time (55 ns), significantly reducing switching losses in hard-commutated topologies compared to discrete silicon diodes. Its performance is characterized across temperature and current in the official datasheet.
What is the purpose of the fourth pin (Source 2) on the TW030Z120C,S1F TO-247-4L(X) package?
The fourth pin (Source 2) on the TW030Z120C,S1F serves exclusively as the gate drive signal return path-also known as a Kelvin source connection. It isolates the gate loop from high-current source paths, minimizing inductive coupling that can cause gate oscillation or false turn-on. The main current must flow through Source 1 only, as specified in Toshiba's application guidance.
What thermal resistance values apply to the TW030Z120C,S1F under real-world mounting conditions?
The TW030Z120C,S1F has a guaranteed maximum channel-to-case thermal resistance (Rth(ch-c)) of 0.602 °C/W when mounted to a flat, smooth heatsink with proper torque (0.8 N·m) and thermal interface material. This value assumes direct metal-to-metal contact; adding thermal paste or pads increases resistance. The channel-to-ambient value (50 °C/W) is highly dependent on heatsink size and airflow and is not guaranteed under standardized test conditions.
Is the TW030Z120C,S1F suitable for use in automotive applications such as traction inverters?
No-the TW030Z120C,S1F is not qualified for automotive traction applications. Toshiba explicitly states in its documentation that this device is intended for industrial, commercial, and renewable energy equipment-not for systems requiring extraordinarily high reliability, such as Class 3 medical devices, aerospace, nuclear facilities, or automotive safety-critical systems including EV traction inverters.
TW030Z120C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 41mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs:
- 82 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2925 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 249W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-4L(X)
TW030Z120C,S1F FAQ
1.How can I place an order for TW030Z120C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW030Z120C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW030Z120C,S1F reliable?
The price and inventory of TW030Z120C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW030Z120C,S1F is usually 5 days.
3.What payment methods are accepted for TW030Z120C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW030Z120C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW030Z120C,S1F?
TW030Z120C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW030Z120C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW030Z120C,S1F?
For technical support, including TW030Z120C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW030Z120C,S1F requirements.
6.How does Aetrix verify that TW030Z120C,S1F is sourced from the original manufacturer or authorized distributors?
All TW030Z120C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW030Z120C,S1F meets industry standards.
7.What is the process for return or replacement of TW030Z120C,S1F?
All TW030Z120C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW030Z120C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW030Z120C,S1F part is unused and in its original packaging.
Return procedure for TW030Z120C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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