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Toshiba Semiconductor and Storage TW048Z65C,S1F
- Part No.:
- TW048Z65C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
TW048Z65C,S1F.pdf
- Description:
- G3 650V SIC-MOSFET TO-247-4L 48
- Quantity:
- Payment:
- Shipping:
Inventory:243
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Product details
Overview
TW048Z65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and industrial power supplies. It delivers 650 V drain-source breakdown voltage, 48 mΩ typical RDS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates with gate drive of 0 V/18 V.
For engineers reviewing the TW048Z65C,S1F datasheet, TW048Z65C,S1F pinout, TW048Z65C,S1F application, or TW048Z65C,S1F equivalent, key selection criteria include its TO-247-4L(X) 4-pin layout with dedicated source-sense pin, high-temperature channel rating (175 °C), low switching losses (Eon = 122 µJ, Eoff = 58 µJ at 400 V/20 A), and third-generation SiC chip architecture.
Technical Context
This device implements a trench-gate SiC MOSFET structure with monolithically integrated Schottky barrier diode-enabling zero reverse recovery charge (Qrr = 25 nC typ.) and eliminating hard-switching tail current. Its 3.0–5.0 V gate threshold voltage ensures noise immunity in high-dV/dt environments.
The TO-247-4L(X) package separates high-current source (Pin 2) from signal-return source (Pin 3), enabling Kelvin-source gate drive to minimize dynamic RDS(ON) rise and improve switching consistency under high di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports 400 V bus designs with ≥1.6× voltage margin for transient overvoltage robustness |
| RDS(ON) (typ.) | 48 mΩ at VGS = 18 V, ID = 20 A - enables <1.5 W conduction loss at 20 A continuous current |
| Vth | 3.0–5.0 V - provides stable turn-on behavior and reduces risk of spurious switching in noisy systems |
| VDSF (diode) | −1.35 V (typ.) - lowers body-diode conduction loss during synchronous rectification or freewheeling |
| Eoss | 14 µJ at VDS = 400 V - reduces capacitive switching energy and improves light-load efficiency |
| Qg | 41 nC (typ.) - determines gate driver power requirement and influences switching speed control |
| Rth(ch-c) | 1.133 °C/W - allows 132 W power dissipation at Tc = 25 °C with manageable thermal interface design |
Pinout & Package
Package: TO-247-4L(X), also designated 2-16M3A by Toshiba; thermally optimized 4-lead through-hole package with isolated source-sense terminal and heatsink-connected drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main power output terminal / heatsink connection | Electrically and thermally connected to metal tab; must be mounted to heatsink with proper torque (0.8 N·m) |
| 2 (Source 1) | High-current return path for main load current | Carries full switched current; connects to PCB power ground plane or low-impedance return trace |
| 3 (Source 2) | Signal-reference return for gate drive loop | Kelvin sense point for gate-source voltage; must connect directly to gate driver ground, not shared with Source 1 |
| 4 (Gate) | Control input for MOSFET channel modulation | Driven with 0 V (off) / +18 V (on); requires low-inductance routing to Source 2 to suppress ringing |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC Schottky body diode | Eliminates reverse recovery loss (Qrr = 25 nC typ.), enabling ZVS operation and reducing EMI in hard-switched topologies |
| 4-pin Kelvin-source configuration | Decouples gate-loop reference from high-di/dt current path, stabilizing VGS during fast switching and improving RDS(ON) repeatability |
| Third-generation SiC die | Optimized trench gate and drift layer design achieves 48 mΩ RDS(ON) at 650 V with reduced Crss/Ciss ratio for improved Miller immunity |
| High channel temperature rating | 175 °C maximum Tch enables compact thermal design in space-constrained industrial enclosures without derating at full load |
Applications
| Server PSU Primary Switch | Industrial AC-DC Front-End |
|---|---|
Use Scenario: High-density 3 kW server power supply operating at 100 kHz with LLC resonant topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and delivering 20 A peak current per phase. Use Value: Low RDS(ON) and Eoss reduce conduction and switching losses, enabling >97% efficiency at full load while maintaining thermal headroom. | Use Scenario: Three-phase PFC stage in factory automation power system requiring 5 kW output and universal input (90–264 VAC). IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC with 650 V blocking capability and fast diode recovery. Use Value: Integrated SiC diode eliminates external anti-parallel diode, simplifies layout, and removes Qrr-induced losses and thermal stress on adjacent devices. |
| Solar Inverter DC Link | EV On-Board Charger |
Use Scenario: MPPT DC-DC stage in string inverters interfacing PV arrays up to 1000 VDC. IC Role / Device Role / Timing Role: Isolated DC-DC converter primary switch operating at 150 kHz with 650 V isolation barrier. Use Value: 175 °C channel rating supports operation in unventilated rooftop enclosures; low VDSF minimizes freewheeling loss during dead-time intervals. | Use Scenario: Bidirectional AC-DC stage in 11 kW OBC supporting both grid-to-battery and vehicle-to-grid modes. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology with reverse conduction capability during V2G phase. Use Value: Symmetrical diode forward voltage (−1.35 V) and low trr (50 ns) ensure balanced conduction loss and minimal reverse recovery overshoot in bidirectional operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC4065DL | 650 V, 40 mΩ RDS(ON), TO-247-3L, no Kelvin source; higher Qg (52 nC) | Lacks source-sense pin; requires careful gate loop layout to avoid dynamic RDS(ON) variation | Preferred where board space limits 4-pin footprint but gate drive stability can be ensured via layout optimization |
| C3M0045065K | 650 V, 45 mΩ RDS(ON), TO-247-4L, integrated diode VF = −1.5 V, higher Eoff (72 µJ) | Same 4-pin Kelvin configuration; slightly higher diode VF increases freewheeling loss at high current | Valid alternative when sourcing flexibility is required and minor efficiency trade-off in diode conduction is acceptable |
Compared with STPSC4065DL and C3M0045065K, the TW048Z65C,S1F offers superior gate-drive stability via dedicated Source 2, lowest diode forward voltage among the three, and lowest Eoff, making it optimal for high-frequency, high-reliability industrial and renewable energy systems where layout-controlled gate loops are impractical.
Availability
TW048Z65C,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and solar inverter DC link stages requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for TW048Z65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in SiC technology and automotive-grade reliability.
The TW048Z65C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems demanding robustness at elevated temperatures and fast switching performance.
FAQ
What is the recommended gate drive voltage for TW048Z65C,S1F?
The TW048Z65C,S1F is specified for VGS(on) = +18 V and VGS(off) = 0 V. Driving the gate at +18 V ensures full enhancement and minimum RDS(ON), while 0 V guarantees reliable turn-off. Gate voltage must not exceed +25 V or fall below −10 V to avoid damage. The device's 3.0–5.0 V threshold voltage provides noise margin against false triggering in electrically noisy environments, and the TW048Z65C,S1F benefits from tight Vth distribution across temperature for predictable timing behavior.
Does TW048Z65C,S1F include an integrated body diode?
Yes, the TW048Z65C,S1F integrates a monolithic SiC Schottky barrier diode, confirmed by its −1.35 V typical diode forward voltage (VDSF) and absence of reverse recovery charge (Qrr = 25 nC typ.). This diode enables bidirectional current flow and eliminates reverse recovery losses common in silicon MOSFETs. The TW048Z65C,S1F's diode is rated for 12 A DC reverse current at 25 °C and exhibits low trr (50 ns) and low Eoss, making it suitable for synchronous rectification and totem-pole PFC applications without external diodes.
What is the purpose of the fourth pin (Source 2) on TW048Z65C,S1F?
The fourth pin (Source 2) on the TW048Z65C,S1F serves as a Kelvin source connection for gate drive return-separate from the high-current Source 1 pin. This configuration isolates the gate loop's reference point from voltage drops caused by high di/dt current flowing through Source 1, ensuring accurate VGS control and minimizing dynamic RDS(ON) rise. For correct operation, the TW048Z65C,S1F requires Source 2 to be routed directly to the gate driver's ground node, not tied to Source 1 on the PCB, preserving switching fidelity in high-frequency, high-power applications.
What thermal resistance does TW048Z65C,S1F specify between channel and case?
The TW048Z65C,S1F specifies a maximum channel-to-case thermal resistance (Rth(ch-c)) of 1.133 °C/W under standard mounting conditions. This value is measured with the drain tab attached to a heatsink at 25 °C ambient, using 0.8 N·m mounting torque. Combined with its 132 W maximum power dissipation rating at Tc = 25 °C, this Rth(ch-c) enables precise junction temperature estimation in thermal modeling. When designing with the TW048Z65C,S1F, engineers must account for additional thermal resistances-interface material, heatsink, and ambient-to ensure Tch remains ≤175 °C under worst-case load.
Is TW048Z65C,S1F RoHS compliant?
Yes, the TW048Z65C,S1F is RoHS compliant, as indicated by underlined lot marking per Toshiba's documentation (Rev. 2.0.A). The device meets Directive 2011/65/EU requirements for restriction of hazardous substances. RoHS compliance is verified through Toshiba's internal environmental testing and material declarations. Customers should confirm compliance status for their specific date code via Toshiba's official environmental reports or contact Toshiba sales representatives, as the TW048Z65C,S1F's RoHS status may vary by production batch and regional regulatory updates.
TW048Z65C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 69mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1362 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 132W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-4L(X)
TW048Z65C,S1F FAQ
1.How can I place an order for TW048Z65C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW048Z65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW048Z65C,S1F reliable?
The price and inventory of TW048Z65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW048Z65C,S1F is usually 5 days.
3.What payment methods are accepted for TW048Z65C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW048Z65C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW048Z65C,S1F?
TW048Z65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW048Z65C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW048Z65C,S1F?
For technical support, including TW048Z65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW048Z65C,S1F requirements.
6.How does Aetrix verify that TW048Z65C,S1F is sourced from the original manufacturer or authorized distributors?
All TW048Z65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW048Z65C,S1F meets industry standards.
7.What is the process for return or replacement of TW048Z65C,S1F?
All TW048Z65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW048Z65C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW048Z65C,S1F part is unused and in its original packaging.
Return procedure for TW048Z65C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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