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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TW083N65C,S1F

Name: TW083N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW083N65C,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TW083N65C,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TW083N65C,S1F.pdf

Description:: G3 650V SIC-MOSFET TO-247 83MOH

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Product details

Overview

TW083N65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and industrial SMPS. It delivers 650 V drain-source breakdown voltage, 83 mΩ typical R_DS(ON), built-in SiC Schottky body diode with −1.35 V forward voltage, and operates up to 175 °C channel temperature.

For engineers reviewing the TW083N65C,S1F datasheet, TW083N65C,S1F pinout, TW083N65C,S1F application, or TW083N65C,S1F equivalent, key selection criteria include its third-generation SiC chip architecture, gate drive compatibility with 0 V/18 V logic, low Q_g (28 nC), and robust safe operating area for hard-switching topologies.

Technical Context

This device implements a trench-gate SiC MOSFET structure with monolithically integrated Schottky barrier diode-eliminating reverse recovery charge (Q_rr = 189 nC typ.) and enabling zero-current turn-off in synchronous rectification. Its 3.0–5.0 V threshold voltage ensures noise immunity in noisy industrial environments.

The TO-247 package provides low thermal resistance (R_th(ch-c) = 1.35 °C/W) and direct heatsink mounting via the drain tab. Gate drive requires 18 V for full enhancement and supports fast switching (t_r = 41 ns, t_f = 28 ns) with minimal Miller capacitance (C_rss = 3.4 pF).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Enables use in 400 V AC-input PFC and 48–380 V DC bus systems without derating.
R_DS(ON)	83 mΩ (typ. at V_GS = 18 V, I_D = 15 A) - Delivers <1.25 W conduction loss at 15 A, reducing heatsink requirements.
V_th	3.0–5.0 V - High threshold improves EMI immunity and prevents spurious turn-on during dV/dt transients.
V_DSF	−1.35 V (typ.) - Integrated SiC SBD enables efficient bidirectional current flow with no reverse recovery tail.
Q_g	28 nC (typ.) - Enables high-frequency operation (>100 kHz) with moderate gate driver power (e.g., TC4427).
T_ch(max)	175 °C - Supports compact thermal design in sealed enclosures or high-ambient industrial settings.
C_iss	873 pF (at V_DS = 400 V) - Low input capacitance reduces gate drive energy and improves switching speed stability.

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), thermally optimized with isolated gate terminal and drain-connected metal tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 0 V / 18 V logic-level gate drive; sensitive to ESD-requires TVS protection per IEC 61000-4-2.
2 (Drain)	High-side power terminal	Electrically connected to heatsink; must be insulated from chassis unless system ground-referenced at drain.
3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; layout must minimize inductance to suppress V_GS ringing.

Key Features

Feature	Design Value
Monolithic SiC Schottky diode	Eliminates Q_rr-induced losses and EMI spikes-enables ZVS in LLC resonant converters.
Third-generation SiC trench MOS	Reduces R_DS(ON) × area by 22% vs. second-gen, improving power density in space-constrained PSUs.
Enhancement-mode operation	Ensures fail-safe off-state at power-up; no external bias required for gate control.
175 °C maximum channel temperature	Permits operation in ambient >105 °C environments without forced air cooling.
Low C_rss/C_iss ratio	3.4 pF / 873 pF = 0.39% - Minimizes Miller effect, enabling stable 100+ kHz switching with standard gate drivers.

Applications

Server PSU Primary Switch	Industrial Motor Drive Inverter
Use Scenario: High-density 3 kW server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage handling 400 V DC bus and 15 A peak current. Use Value: 83 mΩ R_DS(ON) and −1.35 V V_DSF reduce total switching + conduction losses by 18% vs. comparable Si MOSFETs.	Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors with regenerative braking capability. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge, conducting bidirectional current during regeneration. Use Value: Integrated SiC SBD enables efficient freewheeling without external diodes-reducing BOM count and PCB area by 32%.
Solar Microinverter DC-DC Stage	EV Onboard Charger PFC
Use Scenario: 300 W microinverter with interleaved boost converter feeding 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in boost half-bridge, switching at 200 kHz with 50% duty cycle. Use Value: Low Q_g (28 nC) and fast t_r/t_f enable high-frequency operation while maintaining <1.5% gate drive loss.	Use Scenario: 6.6 kW single-phase OBC using continuous conduction mode (CCM) PFC stage. IC Role / Device Role / Timing Role: Active switch in boost PFC cell, handling 10 A RMS current at 65 kHz. Use Value: 650 V rating and 175 °C T_ch allow full-rated operation across −40 °C to +85 °C ambient without derating.

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage handling 400 V DC bus and 15 A peak current.

Use Value: 83 mΩ R_DS(ON) and −1.35 V V_DSF reduce total switching + conduction losses by 18% vs. comparable Si MOSFETs.

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors with regenerative braking capability.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge, conducting bidirectional current during regeneration.

Use Value: Integrated SiC SBD enables efficient freewheeling without external diodes-reducing BOM count and PCB area by 32%.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC

Use Scenario: 300 W microinverter with interleaved boost converter feeding 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in boost half-bridge, switching at 200 kHz with 50% duty cycle.

Use Value: Low Q_g (28 nC) and fast t_r/t_f enable high-frequency operation while maintaining <1.5% gate drive loss.

Use Scenario: 6.6 kW single-phase OBC using continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Active switch in boost PFC cell, handling 10 A RMS current at 65 kHz.

Use Value: 650 V rating and 175 °C T_ch allow full-rated operation across −40 °C to +85 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80N65DM6AG	650 V, 80 mΩ R_DS(ON), integrated SiC SBD, but higher Q_g (42 nC) and lower I_D rating (30 A vs. 30 A DC).	Requires stronger gate driver due to higher Q_g; less suitable for >150 kHz designs.	Prefer when lower R_DS(ON) is critical and gate drive capability allows higher Q_g.
IXTH80N65X2	650 V, 80 mΩ R_DS(ON), no integrated diode; discrete SiC SBD needed; higher V_F (−1.7 V) and Q_rr (320 nC).	Increases component count and layout complexity; higher diode losses in bidirectional conduction.	Select only if discrete diode optimization is required or legacy layout re-use mandates separate diode placement.

Compared with STP80N65DM6AG and IXTH80N65X2, the TW083N65C,S1F offers optimal balance of low Q_g, integrated diode performance, and thermal robustness-making it preferred for compact, high-frequency, high-reliability industrial SMPS where layout simplicity and efficiency are prioritized.

Availability

TW083N65C,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for TW083N65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power electronics innovation.

The TW083N65C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial, renewable energy, and transportation infrastructure.

FAQ

What is the maximum continuous drain current rating for TW083N65C,S1F at Tc = 100 °C?

The TW083N65C,S1F supports 21 A DC drain current at case temperature (T_c) = 100 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the 1.35 °C/W channel-to-case thermal resistance. Exceeding this current without thermal margin risks exceeding the 175 °C maximum channel temperature and accelerated wear-out.

Does TW083N65C,S1F require negative gate voltage for reliable turn-off?

No, the TW083N65C,S1F does not require negative gate voltage for turn-off. Its recommended gate-source drive is 0 V (off) and +18 V (on), per Toshiba's official specifications. The device's enhancement-mode architecture and 3.0–5.0 V threshold ensure clean turn-off at 0 V gate bias, eliminating need for complex negative bias circuitry.

Can TW083N65C,S1F replace silicon MOSFETs in existing 650 V designs without layout changes?

While the TW083N65C,S1F shares the TO-247 footprint with many silicon MOSFETs, direct replacement requires verification of gate drive strength (≥2 A peak), PCB trace inductance (<10 nH source loop), and thermal interface design. Its faster switching and lower Q_g may expose layout parasitics not problematic with slower Si devices-so gate resistor tuning and layout review are essential before drop-in use.

What is the typical reverse recovery charge (Qrr) of TW083N65C,S1F's integrated body diode?

The TW083N65C,S1F's integrated SiC Schottky body diode has no reverse recovery charge-Q_rr is not applicable. Instead, its diode conduction is characterized by stored charge Q_s = 189 nC (typ.) at T_c = 25 °C, which reflects minority carrier-free unidirectional conduction with negligible tail current, enabling clean commutation in synchronous rectifiers.

Is TW083N65C,S1F RoHS compliant and lead-free?

Yes, the TW083N65C,S1F is RoHS compliant. Per Toshiba's marking documentation, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE status. The device meets Directive 2011/65/EU requirements, with lead content below 0.1 wt% and full compliance verified through Toshiba's material declaration process.

TW083N65C,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 113mOhm @ 15A, 18V

Vgs(th) (Max) @ Id:: 5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 873 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 111W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TW083N65C,S1F FAQ

1.How can I place an order for TW083N65C,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TW083N65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TW083N65C,S1F reliable?

The price and inventory of TW083N65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW083N65C,S1F is usually 5 days.

3.What payment methods are accepted for TW083N65C,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW083N65C,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TW083N65C,S1F?

TW083N65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TW083N65C,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TW083N65C,S1F?

For technical support, including TW083N65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW083N65C,S1F requirements.

6.How does Aetrix verify that TW083N65C,S1F is sourced from the original manufacturer or authorized distributors?

All TW083N65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW083N65C,S1F meets industry standards.

7.What is the process for return or replacement of TW083N65C,S1F?

All TW083N65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW083N65C,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TW083N65C,S1F part is unused and in its original packaging.

Return procedure for TW083N65C,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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