Renesas UPA1717G(0)-E1-AT

Overview

UPA1717G(0)-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for high-efficiency power management in notebook computer DC-DC converters and load switches. It delivers R_DS(on) = 33 mΩ max at V_GS = −10 V / I_D = −3 A, supports −30 V V_DSS, and operates with built-in gate-source ESD protection diode in Power SOP8 package.

For engineers reviewing the UPA1717G(0)-E1-AT datasheet, UPA1717G(0)-E1-AT pinout, UPA1717G(0)-E1-AT application, or UPA1717G(0)-E1-AT equivalent, key selection criteria include low-voltage gate drive compatibility (−4.5 V capable), pulsed current handling up to −24 A, thermal performance on ceramic substrate, and industrial-grade reliability for portable computing power stages.

Technical Context

This P-channel MOSFET operates as a high-side load switch or synchronous rectifier in buck converter topologies. Its −2.0 V to −2.5 V gate threshold (V_GS(off)) ensures robust turn-off under noisy supply conditions, while low C_iss = 830 pF enables fast switching with minimal drive loss.

The integrated body diode exhibits V_F(S-D) = 0.82 V at 6 A and t_rr = 35 ns, supporting efficient reverse recovery in discontinuous conduction mode. Thermal resistance R_th(ch-A) = 62.5 °C/W (mounted on 1200 mm² ceramic) defines safe operating area limits under pulse and DC conditions.

Key Specifications

Pinout & Package

UPA1717G(0)-E1-AT is housed in Power SOP8 (M8E) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–3 and 5–8 are Drain terminals; Pin 4 is Gate; Pins 1,2,3 share Source connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DS-T1-E3 and IRLML6344TRPBF, the UPA1717G(0)-E1-AT offers superior pulsed current capability (−24 A) and lower gate charge (15 nC), making it optimal for high-transient notebook power rails where fast switching and surge tolerance are jointly required.

Availability

UPA1717G(0)-E1-AT is available at Aetrix Electronics and suitable for notebook computer power management, portable HDD motor control, and USB power switching requiring stable component supply across extended production lifecycles.

Supply support for UPA1717G(0)-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The µPA1717 series was developed specifically for high-density, low-voltage power management in portable computing platforms, emphasizing low R_DS(on) at logic-level gate drive and robust transient handling in space-constrained designs.

FAQ

What is the maximum continuous drain current rating for UPA1717G(0)-E1-AT at 25°C ambient?

The UPA1717G(0)-E1-AT has a DC drain current rating of −6 A at T_A = 25°C when mounted on a 1200 mm² ceramic substrate. This value drops with rising ambient temperature per the derating curve in the datasheet; at 85°C ambient, usable DC current is approximately −3.5 A. The UPA1717G(0)-E1-AT must be thermally anchored to maintain channel temperature below 150°C under sustained load.

Does UPA1717G(0)-E1-AT require an external gate resistor for stability?

The UPA1717G(0)-E1-AT does not mandate an external gate resistor for basic operation, but a 2–10 Ω series resistor is recommended to dampen gate oscillation and limit peak gate current during fast switching. Test data shows 6 Ω used in switching characterization (t_f, t_d(off)); omitting it may cause ringing or shoot-through in high-di/dt layouts. The UPA1717G(0)-E1-AT gate drive loop should be kept short and low-inductance regardless.

Can UPA1717G(0)-E1-AT be used in avalanche energy applications?

No - the UPA1717G(0)-E1-AT is not rated for repetitive avalanche operation. Its absolute maximum ratings specify only V_DSS = −30 V with no avalanche energy (E_AS) or single-pulse avalanche specifications. Operation beyond V_DSS risks irreversible failure. The UPA1717G(0)-E1-AT must be used within its safe operating area with appropriate voltage clamping or snubbing if inductive loads are present.

Is the body diode in UPA1717G(0)-E1-AT optimized for reverse recovery in synchronous rectification?

Yes - the UPA1717G(0)-E1-AT features a fast-recovery body diode with t_rr = 35 ns and Q_rr = 15 nC at di/dt = 100 A/µs, explicitly characterized for synchronous rectifier use. Its V_F(S-D) = 0.82 V at 6 A supports low forward loss, and the diode's soft recovery behavior reduces EMI in buck converter outputs. This makes the UPA1717G(0)-E1-AT suitable for DCM and CCM synchronous rectification in notebook VRMs.

What is the gate-to-source leakage current specification for UPA1717G(0)-E1-AT at maximum rated voltage?

The UPA1717G(0)-E1-AT specifies I_GSS ≤ ±10 µA at V_GS = ±25 V and T_A = 25°C. This leakage remains stable across temperature and confirms robust gate oxide integrity. At typical operating gate voltages (−4.5 V to −10 V), leakage is well below 1 µA, ensuring minimal static power draw in always-on control circuits. The UPA1717G(0)-E1-AT gate structure includes integrated protection that maintains this spec over lifetime.