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Renesas UPA1725G-E1-A
- Part No.:
- UPA1725G-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA1725G-E1-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
UPA1725G-E1-A from Renesas Electronics is an N-channel power MOSFET designed for DC-DC converter high-side switching in notebook computer power management. It features 21.0 mΩ max RDS(on) at VGS = 4.5 V / ID = 3.5 A, 2.5-V logic-level gate drive capability, and integrated gate-source ESD protection diode. Its Power SOP8 package supports surface-mount implementation in compact portable power rails.
For engineers reviewing the UPA1725G-E1-A datasheet, UPA1725G-E1-A pinout, UPA1725G-E1-A application, or UPA1725G-E1-A equivalent, key selection criteria include low-voltage gate compatibility (2.5–4.5 V), pulsed drain current rating of ±28 A, thermal resistance (Rth(ch–A) = 62.5 °C/W), body diode reverse recovery time (trr = 40 ns), and industrial-grade reliability per Renesas Standard quality grade.
Technical Context
This device operates as a unidirectional, enhancement-mode N-channel MOSFET with no internal level-shifting or driver circuitry. Its gate threshold voltage (VGS(off) = 0.5–1.5 V) enables direct interface with 2.5-V and 3.3-V controllers, while its low Ciss (950 pF typ.) supports high-frequency switching up to several hundred kHz in synchronous buck topologies.
The built-in gate-source protection diode is strictly for ESD mitigation-not functional clamping-and external gate resistors (e.g., 10 Ω) are required to control dV/dt and ringing during turn-on/turn-off. The body diode exhibits VF(S–D) = 0.8 V at 7 A and Qrr = 27 nC, making it suitable for non-synchronous flyback or freewheeling paths where controlled reverse recovery is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage in high-side switch position; limits use to ≤12-V input rails with margin. |
| RDS(on)1 | 21.0 mΩ max @ VGS = 4.5 V, ID = 3.5 A - Determines conduction loss in 3.5-A continuous load scenarios. |
| QG | 9.6 nC - Gate charge value defining driver strength requirement for <100-ns switching transitions. |
| tr/tf | 120 ns / 70 ns - Rise/fall times measured with 10-Ω gate resistor; sets minimum practical PWM frequency. |
| Tch max | 150 °C - Absolute maximum channel temperature; requires thermal design to maintain below this limit under 2.0-W dissipation. |
| Ciss | 950 pF typ. - Input capacitance affecting gate drive loop stability and controller phase margin. |
| ID(pulse) | ±28 A - Peak pulsed current rating (PW ≤ 10 µs, duty ≤ 1%) for inrush or transient overload handling. |
Pinout & Package
UPA1725G-E1-A uses the Power SOP8 (M8E) surface-mount package: 4.4 mm × 5.37 mm footprint, 1.8 mm max height, with exposed drain pad for thermal conduction. Pin 1–3 and 5–8 are internally connected to drain; pin 4 is source; pin 5 is gate. The package includes a built-in gate-source protection diode but no isolation between drain and substrate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | All electrically common; connects to high-side switch node and PCB thermal pad for heat dissipation. |
| 4 | Source (S) | Reference node for gate drive; ties to power ground or low-side switch source in synchronous converters. |
| 5 | Gate (G) | Control terminal; requires external series resistor (e.g., 10 Ω) to damp oscillation and limit peak gate current. |
Key Features
| Feature | Design Value |
|---|---|
| 2.5-V logic-compatible gate | Guarantees full enhancement at VGS ≥ 2.5 V, enabling direct drive from low-voltage microcontrollers or PWM controllers without level shifters. |
| Low RDS(on) at 4.5 V | 21.0 mΩ max reduces conduction loss by >30% vs. legacy 5-V gate MOSFETs in 3.3-V rail applications. |
| Built-in G-S ESD diode | Provides Class 2 HBM ESD protection (per datasheet note); eliminates need for discrete gate Zener in most board-level ESD environments. |
| Optimized for portable power | Power SOP8 footprint and 2.0-W power dissipation rating match thermal constraints of thin-profile notebook DC-DC modules. |
Applications
| Notebook CPU Core Voltage Regulator | USB-C PD Power Path Switch |
|---|---|
Use Scenario: High-efficiency 1–2 V output buck converter supplying Intel/AMD mobile processors with dynamic current demand up to 7 A. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz; handles both steady-state conduction and fast load transients. Use Value: Low RDS(on) minimizes I²R loss at 3.5-A typical load; fast tr/tf ensures tight regulation during 10-A µs-scale load steps. |
Use Scenario: Input power path control in dual-role USB-C devices, enabling safe 20-V/5-A source/sink handshaking and fault isolation. IC Role / Device Role / Timing Role: Single-pole high-side load switch managing VBUS routing; activated only during negotiated PDO transitions. Use Value: 20-V VDSS and ±28-A pulse rating support robust overcurrent response; low QG enables fast enable/disable (<10 µs) during CC logic arbitration. |
| Industrial Tablet PMIC Output Stage | Embedded Display Backlight Driver |
Use Scenario: Secondary-side 3.3-V/5-V DC-DC stage in fanless industrial tablets requiring extended temperature operation (−40°C to +85°C ambient). IC Role / Device Role / Timing Role: High-side switch in buck converter delivering stable output under variable display and SoC loading. Use Value: RDS(on) drift <15% from −40°C to +125°C channel temp ensures consistent efficiency across thermal range; Standard-grade qualification covers industrial use. |
Use Scenario: LED string current control via constant-on-time buck topology driving 12-V white LED arrays in medical-grade displays. IC Role / Device Role / Timing Role: Main switching element modulating average current through inductive LED path at 100–200 kHz. Use Value: Low Ciss and Crss reduce switching losses and EMI; body diode trr = 40 ns prevents cross-conduction in asynchronous mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-E3 | 30-V VDSS, 45-mΩ RDS(on) @ 4.5 V, SOT-23 package, no integrated G-S diode. | Higher voltage margin but higher conduction loss; unsuitable for space-constrained layouts requiring Power SOP8 footprint. | Select when 30-V headroom is mandatory and thermal budget allows higher RDS(on). |
| AO3400 | 30-V VDSS, 28-mΩ RDS(on) @ 4.5 V, SO-8 package, no G-S protection diode. | Larger SO-8 body (same pin count, different outline); lacks on-chip ESD diode-requires external gate clamp. | Choose for cost-sensitive designs where external protection is acceptable and layout accommodates larger SO-8. |
Compared with Si2302DS-T1-E3 and AO3400, the UPA1725G-E1-A delivers superior 20-V optimized performance with lower RDS(on), integrated ESD protection, and Power SOP8 thermal efficiency-making it the preferred choice for space- and efficiency-critical 12-V-input notebook and portable power stages.
Availability
UPA1725G-E1-A is available at Aetrix Electronics and suitable for notebook power management, USB-C PD power path control, and industrial tablet DC-DC conversion requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.
Supply support for UPA1725G-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The UPA1725G-E1-A belongs to Renesas' legacy µPA power MOSFET family, engineered specifically for low-voltage, high-density power management in portable computing systems where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for UPA1725G-E1-A?
The UPA1725G-E1-A has a continuous drain current (ID(DC)) rating of ±7 A at TA = 25°C on a ceramic substrate (1200 mm² × 2.2 mm). Derating applies above 25°C ambient; at 85°C, usable ID(DC) drops to approximately 4.2 A based on the published derating curve in the datasheet.
Does UPA1725G-E1-A include a body diode, and what are its key parameters?
Yes, the UPA1725G-E1-A integrates a parasitic body diode between source and drain. Its forward voltage is VF(S–D) = 0.8 V at IF = 7 A and VGS = 0 V, with reverse recovery time trr = 40 ns and recovered charge Qrr = 27 nC under specified test conditions (di/dt = 100 A/µs). This diode is not rated for continuous conduction but supports freewheeling in non-synchronous topologies.
Can UPA1725G-E1-A be driven directly by a 2.5-V GPIO without a level shifter?
Yes, the UPA1725G-E1-A is explicitly characterized for 2.5-V gate drive: RDS(on)3 = 30.0 mΩ max at VGS = 2.5 V and ID = 3.5 A. Its gate threshold voltage (VGS(off)) ranges from 0.5 V to 1.5 V, ensuring reliable turn-on with 2.5-V logic. However, gate resistor selection (e.g., 10 Ω) remains essential to control switching speed and prevent ringing.
What is the thermal resistance from channel to ambient for UPA1725G-E1-A?
The UPA1725G-E1-A has a channel-to-ambient thermal resistance (Rth(ch–A)) of 62.5 °C/W when mounted on a 1200 mm² × 2.2 mm ceramic substrate, as defined in the Absolute Maximum Ratings table. This value assumes optimal PCB copper area and thermal vias beneath the exposed drain pad; actual board-level Rth will vary with layout and airflow.
Is UPA1725G-E1-A compliant with RoHS and lead-free assembly requirements?
Yes, the UPA1725G-E1-A is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. The "E1-A" suffix denotes tape-and-reel packaging compatible with standard SMT placement equipment. Renesas confirms compliance with EU RoHS Directive 2011/65/EU and related amendments, including restrictions on lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE.
UPA1725G-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA1725G-E1-A FAQ
1.How can I place an order for UPA1725G-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1725G-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1725G-E1-A reliable?
The price and inventory of UPA1725G-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1725G-E1-A is usually 5 days.
3.What payment methods are accepted for UPA1725G-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1725G-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1725G-E1-A?
UPA1725G-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1725G-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1725G-E1-A?
For technical support, including UPA1725G-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1725G-E1-A requirements.
6.How does Aetrix verify that UPA1725G-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA1725G-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1725G-E1-A meets industry standards.
7.What is the process for return or replacement of UPA1725G-E1-A?
All UPA1725G-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1725G-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1725G-E1-A part is unused and in its original packaging.
Return procedure for UPA1725G-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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