Renesas UPA1727G-E1-AT
- Part No.:
- UPA1727G-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA1727G-E1-AT.pdf
- Description:
- UPA1727G-E1-AT - MOS FIELD EFFEC
- Quantity:
- Payment:

- Shipping:

Inventory:5,000
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Product details
Overview
UPA1727G-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial and consumer power supplies. It delivers RDS(on) = 14 mΩ (typ.) at VGS = 10 V / ID = 5.0 A, supports ±40 A pulsed drain current, and features a built-in gate-source ESD protection diode in Power SOP8 package.
For engineers reviewing the UPA1727G-E1-AT datasheet, UPA1727G-E1-AT pinout, UPA1727G-E1-AT application, or UPA1727G-E1-AT equivalent, this device is selected for robust low-RDS(on) performance in 60 V-class synchronous rectification, motor drive half-bridges, and DC-DC converter primary-side switching where thermal efficiency and avalanche ruggedness are critical.
Technical Context
The UPA1727G-E1-AT uses a planar trench-gate structure optimized for low conduction loss and fast switching with Ciss = 2400 pF (typ.) and QG = 45 nC (typ.). Its body diode exhibits VF(S-D) = 0.8 V (typ.) at IF = 10 A and trr = 45 ns (typ.), enabling efficient freewheeling in hard-switched topologies.
It operates within a channel temperature range of –55°C to +150°C and is rated for single-pulse avalanche energy EAS = 200 mJ at IAS = 10 A - validated under VDD = 30 V, RG = 25 Ω, and Tch = 25°C - confirming suitability for inductive load switching without external snubbers in constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 24 V industrial rails. |
| RDS(on) @ 10 V | 14 mΩ typ. - Enables ≤70 mW conduction loss at 5 A DC, reducing heatsink requirements in compact power modules. |
| ID(DC) | ±10 A - Sustained current rating suitable for continuous operation in 12–24 V motor drivers and SMPS output stages. |
| Ciss | 2400 pF typ. - Low input capacitance allows direct drive from standard logic-level gate drivers without buffering. |
| EAS | 200 mJ - Avalanche energy rating supports reliable operation during inductive turn-off transients in relay drivers and solenoid controls. |
| Tch max | 150 °C - High channel temperature limit permits operation in sealed enclosures or high ambient environments up to 105 °C case temp. |
| Package | Power SOP8 - Surface-mount footprint with exposed drain pad for enhanced thermal transfer to PCB copper area. |
Pinout & Package
UPA1727G-E1-AT is housed in Power SOP8 (also referenced as M8E) package with exposed drain pad for thermal dissipation. Pin 1–3 and 5–8 are parallel-connected drain terminals; Pin 4 is gate; Pins 1–3 and 5–8 share source connection via internal bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | High-current output node; all pins internally tied to drain region and exposed metal pad - must be connected to high-current PCB pour. |
| 4 | Gate (G) | Control input; requires <±20 V absolute max rating; low QG enables fast turn-on with minimal driver power. |
| 1, 2, 3, 5, 6, 7, 8 (shared) | Source (S) | Return path for load current; shared with drain pins but electrically isolated - source terminal is accessible only through internal chip bonding, not dedicated pin. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 17 mΩ typ. - Enables full enhancement using 5 V logic or microcontroller GPIOs without level-shifting. |
| Built-in G-S protection diode | ESD-rated to ±20 V - Reduces need for external TVS on gate line in space-constrained board layouts. |
| Low Ciss/Coss ratio | Ciss = 2400 pF, Coss = 400 pF - Improves Miller immunity and reduces switching losses during hard commutation. |
| Fast reverse recovery | trr = 45 ns, Qrr = 84 nC - Minimizes shoot-through risk and power loss in synchronous rectifier configurations. |
| Avalanche-rated | EAS = 200 mJ - Eliminates need for external clamping circuits in inductive load switching applications like valve control. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Half-Bridge |
|---|---|
Use Scenario: Used as high-side switch in non-isolated buck converters delivering 5–12 V @ 3–8 A from 24–48 V input. IC Role / Device Role / Timing Role: Main power switch controlling duty-cycle-dependent energy transfer; operates at 100–500 kHz with hard-switched gate drive. Use Value: 14 mΩ RDS(on) limits conduction loss to <500 mW at 8 A, enabling >92% efficiency without forced air cooling. | Use Scenario: Paired with complementary P-channel or N-channel MOSFET in H-bridge for 12–24 V brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current; synchronized with dead-time control to prevent shoot-through. Use Value: Fast tf = 70 ns and low QGD = 13 nC reduce switching transition time, minimizing overlap losses during direction reversal. |
| Synchronous Rectifier | Industrial Solenoid/Valve Driver |
Use Scenario: Replaces Schottky diode in secondary-side rectification of isolated forward or flyback converters operating at 12–24 V output. IC Role / Device Role / Timing Role: Synchronously gated rectifier controlled by transformer auxiliary winding or controller timing signal. Use Value: VF(S-D) = 0.8 V and trr = 45 ns cut forward drop by >40% vs. 0.45 V Schottky, while eliminating reverse recovery spikes. | Use Scenario: Drives 24 V DC solenoids (10–20 W) in pneumatic/hydraulic control valves with PWM-based force modulation. IC Role / Device Role / Timing Role: Single-ended switch interfacing microcontroller PWM output to inductive load; handles repetitive avalanche during turn-off. Use Value: Rated EAS = 200 mJ absorbs stored inductive energy without external snubber, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQH050N03 | RDS(on) = 4.5 mΩ @ 10 V; smaller TSMT8 package; lower VDSS = 30 V | Not suitable for 48 V bus systems; limited to ≤24 V applications | Select when higher efficiency is required in low-voltage (<24 V), space-constrained designs. |
| ON Semiconductor NTMFS4C09N | RDS(on) = 9.0 mΩ @ 10 V; SO-8FL package; VDSS = 60 V; no integrated G-S diode | Requires external ESD protection; higher thermal resistance due to non-exposed drain pad | Choose for cost-sensitive 60 V applications where gate protection is already implemented externally. |
Compared with RQH050N03 and NTMFS4C09N, the UPA1727G-E1-AT provides balanced trade-offs: sufficient 60 V rating for industrial buses, integrated gate protection for simplified layout, and proven avalanche ruggedness for unclamped inductive loads - making it optimal for reliability-critical 24–48 V embedded power stages.
Availability
UPA1727G-E1-AT is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power modules, and solenoid control systems requiring stable component supply across extended production lifecycles.
Supply support for UPA1727G-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The µPA1727 series was developed for high-reliability, surface-mount power switching in consumer and industrial equipment - emphasizing low RDS(on), avalanche tolerance, and compatibility with automated assembly processes.
FAQ
What is the maximum continuous drain current rating for UPA1727G-E1-AT?
The UPA1727G-E1-AT has a DC drain current rating of ±10 A at TA = 25°C when mounted on a ceramic substrate (1200 mm² × 2.2 mm). Derating applies above 25°C ambient; at 100°C case temperature, usable ID(DC) drops to approximately 4.5 A per the published derating curve in the datasheet.
Does UPA1727G-E1-AT include integrated gate protection?
Yes, the UPA1727G-E1-AT integrates a gate-to-source protection diode rated for ±20 V, providing ESD immunity per human-body model. However, Renesas explicitly states that external protection remains necessary if transient voltages exceeding the rated VGS may occur in the application circuit.
Can UPA1727G-E1-AT operate with 5 V gate drive?
Yes - the UPA1727G-E1-AT achieves RDS(on) = 17 mΩ (typ.) at VGS = 4.5 V and ID = 5.0 A, confirming full enhancement with standard 5 V logic or microcontroller outputs. Its VGS(off) range (1.5–2.5 V) ensures clean turn-off at 0 V gate bias.
What is the thermal resistance from channel to ambient for UPA1727G-E1-AT?
The datasheet specifies Rth(ch-A) = 62.5°C/W under the defined test condition: mounted on a 1200 mm² × 2.2 mm ceramic substrate. This value assumes ideal heat spreading; actual PCB layout (copper area, thickness, vias) will determine real-world thermal performance.
Is UPA1727G-E1-AT suitable for synchronous rectification?
Yes - the UPA1727G-E1-AT is well-suited for synchronous rectification due to its low VF(S-D) = 0.8 V (typ.) at IF = 10 A, fast trr = 45 ns, and low Qrr = 84 nC. These parameters reduce conduction and switching losses compared to Schottky diodes in 12–24 V output converters.
UPA1727G-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
UPA1727G-E1-AT FAQ
1.How can I place an order for UPA1727G-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1727G-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1727G-E1-AT reliable?
The price and inventory of UPA1727G-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1727G-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA1727G-E1-AT?
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4.How is shipping managed for UPA1727G-E1-AT?
UPA1727G-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1727G-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1727G-E1-AT?
For technical support, including UPA1727G-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1727G-E1-AT requirements.
6.How does Aetrix verify that UPA1727G-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA1727G-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1727G-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA1727G-E1-AT?
All UPA1727G-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA1727G-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1727G-E1-AT part is unused and in its original packaging.
Return procedure for UPA1727G-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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