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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA1728G-E1-AT

Name: UPA1728G-E1-AT
Brand: Renesas
SKU: UPA1728G-E1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA1728G-E1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.173", 4.40mm Width)

Datasheet:: UPA1728G-E1-AT.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

UPA1728G-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial and consumer power conversion circuits. It delivers R_DS(on) = 19 mΩ (typ.) at V_GS = 10 V, 4.5 A; supports ±36 A pulsed drain current; features built-in gate-source ESD protection diode; and is housed in a surface-mount Power SOP8 package for compact board layout.

For engineers reviewing the UPA1728G-E1-AT datasheet, UPA1728G-E1-AT pinout, UPA1728G-E1-AT application, or UPA1728G-E1-AT equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating (E_AS = 81 mJ), thermal derating on ceramic substrate, and compatibility with standard logic-level and 10 V gate drivers in motor control and DC-DC converter designs.

Technical Context

The UPA1728G-E1-AT employs a single-chip vertical DMOS structure optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) enables reliable turn-on with 4.0 V logic-level signals, while its C_iss = 1700 pF (typ.) and Q_G = 31 nC support efficient gate driving at frequencies up to several hundred kHz.

This MOSFET integrates a body diode with V_F(S-D) = 0.82 V (IF = 9 A) and t_rr = 41 ns, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI. Its rated V_DSS = 60 V and T_ch = 150 °C allow operation in 24–48 V bus systems under thermally constrained conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports 48 V nominal input rails with 20 % margin for transients and ripple.
R_DS(on) @ V_GS = 10 V	19 mΩ (typ.) - Enables ≤0.39 W conduction loss at 4.5 A DC, reducing heatsink requirements.
I_D(DC)	±9 A - Sustains continuous load current in motor drivers and SMPS primary-side switches.
E_AS	81 mJ - Withstands single-pulse inductive energy without failure in relay or solenoid drive circuits.
C_iss	1700 pF (typ.) - Determines gate drive power requirement and influences switching speed with 10 Ω driver.
t_r/t_f	69 ns / 31 ns - Enables clean edge transitions in 100–500 kHz PWM applications with minimal overlap loss.
T_ch max	150 °C - Sets maximum junction temperature limit for thermal design using R_th(ch-A) = 62.5 °C/W.

Pinout & Package

UPA1728G-E1-AT is packaged in Power SOP8 (also referenced as M8E), a surface-mount 8-pin package with exposed drain pad for enhanced thermal dissipation. The package measures 6.0 × 4.4 mm with 1.27 mm lead pitch and 1.8 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally bonded to substrate; connects to PCB ground plane.
4	Gate	Control terminal; requires external series resistor (e.g., 10 Ω) to damp ringing and limit peak I_G.
5, 6, 7, 8	Drain	Main power output node; electrically tied to exposed metal pad; must be connected to high-current copper pour.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V gate drive	R_DS(on)2 = 23 mΩ (typ.) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.
Built-in G-S protection diode	ESD-rated gate protection reduces need for external TVS in handling-sensitive assembly environments.
High UIS ruggedness	IAS = 9 A and EAS = 81 mJ allow safe operation in inductive load switching without snubbers in many cases.
Optimized capacitance profile	C_iss/C_oss/C_rss ratio supports stable switching with minimal voltage overshoot during hard commutation.

Applications

Brushed DC Motor Driver	DC-DC Synchronous Rectifier
Use Scenario: Driving 24 V, 5 A brushed motors in industrial actuators with PWM at 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via duty-cycle modulation. Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; fast t_f reduces shoot-through risk in H-bridge configurations.	Use Scenario: Secondary-side rectification in 48 V input, 12 V output isolated flyback converters. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 5 A load. Use Value: Body diode t_rr = 41 ns and low V_F reduce reverse recovery losses; R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky.
Industrial Relay/Solenoid Driver	Hot-Swap OR-ing FET
Use Scenario: Controlling 36 V, 6 A solenoids in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Unidirectional load switch with integrated avalanche capability for inductive kick suppression. Use Value: Rated E_AS = 81 mJ eliminates need for external clamping diodes in most 24–48 V solenoid applications.	Use Scenario: OR-ing two 12 V redundant power supplies in telecom shelf management. IC Role / Device Role / Timing Role: Back-to-back configured N-channel FET providing low-loss, bidirectional blocking and forward conduction. Use Value: R_DS(on) = 19 mΩ limits voltage drop to <120 mV at 6 A, improving system efficiency and thermal margin over discrete solutions.

Brushed DC Motor Driver

DC-DC Synchronous Rectifier

Use Scenario: Driving 24 V, 5 A brushed motors in industrial actuators with PWM at 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via duty-cycle modulation.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; fast t_f reduces shoot-through risk in H-bridge configurations.

Use Scenario: Secondary-side rectification in 48 V input, 12 V output isolated flyback converters.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 5 A load.

Use Value: Body diode t_rr = 41 ns and low V_F reduce reverse recovery losses; R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky.

Industrial Relay/Solenoid Driver

Hot-Swap OR-ing FET

Use Scenario: Controlling 36 V, 6 A solenoids in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: Unidirectional load switch with integrated avalanche capability for inductive kick suppression.

Use Value: Rated E_AS = 81 mJ eliminates need for external clamping diodes in most 24–48 V solenoid applications.

Use Scenario: OR-ing two 12 V redundant power supplies in telecom shelf management.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel FET providing low-loss, bidirectional blocking and forward conduction.

Use Value: R_DS(on) = 19 mΩ limits voltage drop to <120 mV at 6 A, improving system efficiency and thermal margin over discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	V_DSS = 60 V, R_DS(on) = 22 mΩ @ 10 V, SO-8 package, no integrated G-S diode.	Lacks built-in gate protection; requires external ESD clamp; higher C_iss (1900 pF).	Prefer UPA1728G-E1-AT when board-level ESD robustness and reduced BOM count are priorities.
DMN6070LSD-13	V_DSS = 60 V, R_DS(on) = 20 mΩ @ 10 V, dual N-channel SO-8, no avalanche rating published.	No specified E_AS; not characterized for UIS; intended for logic-level switching only.	Choose UPA1728G-E1-AT for inductive load reliability where single-pulse avalanche immunity is required.

Compared with IRF7470PBF and DMN6070LSD-13, the UPA1728G-E1-AT provides verified avalanche energy handling (81 mJ), integrated gate protection, and tighter R_DS(on) distribution at 4.5 V drive-making it preferable for ruggedized industrial switching where transient resilience and gate-drive simplicity matter.

Availability

UPA1728G-E1-AT is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, solenoid actuation, and hot-swap OR-ing applications requiring stable component supply and long-term manufacturability.

Supply support for UPA1728G-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The UPA1728G-E1-AT belongs to Renesas' legacy µPA series of discrete power MOSFETs engineered for high-reliability, cost-sensitive industrial switching applications with emphasis on ruggedness, thermal stability, and ease of gate drive.

FAQ

What is the maximum continuous drain current rating for UPA1728G-E1-AT?

The UPA1728G-E1-AT is rated for I_D(DC) = ±9 A at T_A = 25 °C when mounted on a 1200 mm² ceramic substrate. Derating applies above 25 °C ambient; at 100 °C, usable DC current drops to approximately 4.5 A based on the published PT vs. TA curve and R_th(ch-A) = 62.5 °C/W.

Does UPA1728G-E1-AT support logic-level gate drive?

Yes, the UPA1728G-E1-AT supports logic-level drive: its R_DS(on)2 = 23 mΩ (typ.) at V_GS = 4.5 V and R_DS(on)3 = 24 mΩ (typ.) at V_GS = 4.0 V confirm usable on-resistance with standard 3.3 V or 5 V microcontroller outputs. Gate threshold V_GS(off) ranges from 1.5–2.5 V, ensuring reliable turn-on.

What is the purpose of the built-in gate-source diode in UPA1728G-E1-AT?

The built-in gate-source diode in the UPA1728G-E1-AT serves as an ESD protection element, clamping transient voltages between gate and source to prevent oxide damage during handling or board assembly. It is not intended as a functional circuit component and does not replace external gate protection in high-noise or high-dV/dt applications.

Can UPA1728G-E1-AT be used in avalanche mode repeatedly?

No-UPA1728G-E1-AT is characterized for single-pulse avalanche (IAS = 9 A, EAS = 81 mJ) only. Repetitive avalanche operation is not guaranteed and may cause parametric shift or failure. For repetitive inductive switching, ensure proper snubber design or use active clamping to keep V_DS within 60 V rating during turn-off.

What thermal resistance value applies to UPA1728G-E1-AT in standard mounting?

When mounted on a 1200 mm² × 2.2 mm ceramic substrate per the datasheet test condition, the UPA1728G-E1-AT exhibits R_th(ch-A) = 62.5 °C/W. This value defines the junction-to-ambient thermal path and must be used with actual power dissipation to calculate maximum allowable ambient temperature for safe operation.

UPA1728G-E1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.173", 4.40mm Width)

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 26mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PSOP

UPA1728G-E1-AT FAQ

1.How can I place an order for UPA1728G-E1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA1728G-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA1728G-E1-AT reliable?

The price and inventory of UPA1728G-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1728G-E1-AT is usually 5 days.

3.What payment methods are accepted for UPA1728G-E1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1728G-E1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA1728G-E1-AT?

UPA1728G-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA1728G-E1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA1728G-E1-AT?

For technical support, including UPA1728G-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1728G-E1-AT requirements.

6.How does Aetrix verify that UPA1728G-E1-AT is sourced from the original manufacturer or authorized distributors?

All UPA1728G-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1728G-E1-AT meets industry standards.

7.What is the process for return or replacement of UPA1728G-E1-AT?

All UPA1728G-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA1728G-E1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA1728G-E1-AT part is unused and in its original packaging.

Return procedure for UPA1728G-E1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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