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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA1803GR-9JG-E1-A

Name: UPA1803GR-9JG-E1-A
Brand: Renesas
SKU: UPA1803GR-9JG-E1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA1803GR-9JG-E1-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: UPA1803GR-9JG-E1-A.pdf

Description:: MOSFET N-CH 30V 8-TSSOP

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Product details

Overview

UPA1803GR-9JG-E1-A from Renesas Electronics is an N-channel enhancement-mode MOSFET designed for high-efficiency DC power switching in portable electronics. It features R_DS(on) = 12 mΩ max at V_GS = 10 V / I_D = 4.0 A, supports direct 4.5 V gate drive, and integrates a G-S ESD protection diode. It is rated for 30 V V_DSS, ±8.0 A continuous drain current, and operates in Power TSSOP8 package.

For engineers reviewing the UPA1803GR-9JG-E1-A datasheet, UPA1803GR-9JG-E1-A pinout, UPA1803GR-9JG-E1-A application, or UPA1803GR-9JG-E1-A equivalent, key selection criteria include low-voltage gate drive capability, on-resistance stability across temperature, pulse current handling (±32 A), thermal resistance (R_th(ch–A) = 62.5 °C/W), and built-in ESD protection for robustness in battery-powered systems.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching with t_d(on) = 27 ns and t_f = 47 ns under standard test conditions (V_DD = 15 V, R_G = 10 Ω, I_D = 4.0 A). Its transfer characteristics show V_GS(off) = 1.5–2.5 V and |y_fs| = 3–14 S, confirming strong transconductance for stable turn-on at low gate voltages.

The device uses a single-die construction with source-connected body diode and integrated gate-source protection diode. Its safe operating area (SOA) is defined up to 100 V and 10 A for single-pulse operation, with derating starting at T_A > 25°C - critical for thermal design in compact PCB layouts with ceramic substrate mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for battery input rails (e.g., 2-cell Li-ion).
R_DS(on)1	12 mΩ max @ V_GS = 10 V, I_D = 4.0 A - Enables <100 mW conduction loss at 4 A, reducing thermal load in power switches.
R_DS(on)2	16 mΩ max @ V_GS = 4.5 V, I_D = 4.0 A - Confirms full enhancement with logic-level gate drive, eliminating need for level-shifting circuitry.
I_D(DC)	±8.0 A - Continuous current rating defines maximum steady-state load handling without derating beyond ambient limits.
t_r/t_f	77 ns / 47 ns - Fast edge rates minimize switching losses in PWM applications above 100 kHz.
C_iss	1880 pF - Input capacitance determines gate drive strength requirement; ~36 nC total gate charge confirms compatibility with standard MOSFET drivers.
T_ch max	150 °C - Maximum channel temperature defines thermal safety margin; used with R_th(ch–A) = 62.5 °C/W to calculate heatsink requirements.

Pinout & Package

UPA1803GR-9JG-E1-A is housed in Power TSSOP8 (also referenced as "M8E" per Renesas drawing), a thermally enhanced surface-mount package with exposed drain paddle for improved heat dissipation. The 8-pin layout supports high-current routing with three parallel drain and four parallel source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 8	Drain	High-side switch node; electrically tied to exposed paddle - must be connected to power plane or heatsink for thermal management.
2, 3, 6, 7	Source	Return path for load current; multiple pins reduce parasitic inductance and resistive drop in high-frequency switching.
4	Gate	Control input; requires external RC snubber or gate resistor (e.g., 10 Ω) to damp ringing and control dV/dt during switching.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - eliminates need for gate driver ICs in 5 V or single-cell Li-ion systems.
Built-in G-S ESD protection diode	Rated for ±20 V gate-source voltage - provides Class 2 HBM ESD immunity without external TVS, simplifying board-level protection.
Low R_DS(on) at high temperature	R_DS(on) increases only ~20% from 25°C to 125°C at V_GS = 4.5 V - ensures stable efficiency over full industrial temperature range.
Fast switching with low Q_GD/Q_G ratio	Q_GD = 8.7 nC / Q_G = 36 nC → 24% - reduces Miller effect, enabling clean turn-off even with moderate gate resistance.
Body diode with low V_F and t_rr	V_F(S–D) = 0.78 V, t_rr = 37 ns - supports synchronous rectification and flyback recovery in DC–DC converters.

Applications

Load Switch for Portable Devices	DC–DC Converter High-Side Switch
Use Scenario: Enabling/disabling power to peripherals (e.g., USB ports, displays) in smartphones and tablets using a 3.3 V or 4.5 V system rail. IC Role / Device Role / Timing Role: N-channel high-side load switch controlled by baseband processor GPIO; operates in linear or saturated mode depending on enable timing. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 4 A loads; built-in ESD protection guards against hot-plug transients.	Use Scenario: High-side switching element in buck converter topologies powering core logic (e.g., SoC cores, memory) from 5–12 V input rails. IC Role / Device Role / Timing Role: Main power switch synchronized with low-side FET; driven by dedicated gate driver with 10 Ω series resistance. Use Value: Fast t_f = 47 ns and low Q_GD reduce cross-conduction loss; SOA supports 32 A pulsed current during startup or overload events.
Power Bank Output Stage	Industrial Sensor Node Power Control
Use Scenario: Output switching stage in multi-bank portable chargers delivering regulated 5 V/3 A to connected devices via USB-A ports. IC Role / Device Role / Timing Role: Final pass element after DC–DC regulation; controlled by microcontroller with soft-start sequencing. Use Value: R_DS(on) ≤ 16 mΩ at 4.5 V gate drive ensures <200 mV dropout at full load, preserving output regulation accuracy and efficiency.	Use Scenario: Controlled power gating for wireless sensor modules (e.g., LoRa, BLE) in factory automation nodes powered by 24 V DC supply rails. IC Role / Device Role / Timing Role: Isolation switch between main supply and sensor subsystem; activated only during measurement cycles to extend battery life. Use Value: Low I_DSS = 10 μA and high V_GSS = ±20 V ensure minimal leakage and robust noise immunity in electrically noisy industrial environments.

Load Switch for Portable Devices

DC–DC Converter High-Side Switch

Use Scenario: Enabling/disabling power to peripherals (e.g., USB ports, displays) in smartphones and tablets using a 3.3 V or 4.5 V system rail.

IC Role / Device Role / Timing Role: N-channel high-side load switch controlled by baseband processor GPIO; operates in linear or saturated mode depending on enable timing.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 4 A loads; built-in ESD protection guards against hot-plug transients.

Use Scenario: High-side switching element in buck converter topologies powering core logic (e.g., SoC cores, memory) from 5–12 V input rails.

IC Role / Device Role / Timing Role: Main power switch synchronized with low-side FET; driven by dedicated gate driver with 10 Ω series resistance.

Use Value: Fast t_f = 47 ns and low Q_GD reduce cross-conduction loss; SOA supports 32 A pulsed current during startup or overload events.

Power Bank Output Stage

Industrial Sensor Node Power Control

Use Scenario: Output switching stage in multi-bank portable chargers delivering regulated 5 V/3 A to connected devices via USB-A ports.

IC Role / Device Role / Timing Role: Final pass element after DC–DC regulation; controlled by microcontroller with soft-start sequencing.

Use Value: R_DS(on) ≤ 16 mΩ at 4.5 V gate drive ensures <200 mV dropout at full load, preserving output regulation accuracy and efficiency.

Use Scenario: Controlled power gating for wireless sensor modules (e.g., LoRa, BLE) in factory automation nodes powered by 24 V DC supply rails.

IC Role / Device Role / Timing Role: Isolation switch between main supply and sensor subsystem; activated only during measurement cycles to extend battery life.

Use Value: Low I_DSS = 10 μA and high V_GSS = ±20 V ensure minimal leakage and robust noise immunity in electrically noisy industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3400A	R_DS(on) = 28 mΩ @ V_GS = 4.5 V; SOT-23 package; lower current rating (I_D = 5.7 A).	Not suitable for >5 A continuous loads or high-power DC–DC stages due to thermal limitations in SOT-23.	Select AO3400A only for space-constrained, sub-4 A load-switch applications where PCB area is prioritized over conduction loss.
SI2300DS	R_DS(on) = 29 mΩ @ V_GS = 4.5 V; same SOT-23 footprint; higher gate threshold (V_GS(th) = 1.8–2.8 V).	Less margin for reliable turn-on at 4.5 V under voltage droop or temperature variation; unsuitable for critical power sequencing.	Prefer SI2300DS only when legacy SOT-23 compatibility is mandatory and gate drive voltage remains tightly regulated above 4.8 V.

Compared with AO3400A and SI2300DS, UPA1803GR-9JG-E1-A delivers 44% lower R_DS(on) at 4.5 V and 2× higher continuous current in a thermally superior Power TSSOP8 package - making it the preferred choice for 4–8 A portable power switches requiring efficiency, reliability, and ESD resilience.

Availability

UPA1803GR-9JG-E1-A is available at Aetrix Electronics and suitable for portable power management, DC–DC converter design, and industrial sensor node power control requiring stable component supply and long-term lifecycle support.

Supply support for UPA1803GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The UPA1803GR-9JG-E1-A belongs to Renesas' legacy μPA series of logic-level power MOSFETs, engineered specifically for high-efficiency, low-voltage switching in battery-powered consumer electronics and portable industrial equipment.

FAQ

What is the maximum continuous drain current rating for UPA1803GR-9JG-E1-A?

The UPA1803GR-9JG-E1-A has a maximum continuous drain current (I_D(DC)) rating of ±8.0 A at T_A = 25°C when mounted on a 5000 mm² ceramic substrate. Derating applies above 25°C ambient, with thermal resistance R_th(ch–A) = 62.5 °C/W. At 70°C ambient, usable I_D drops to approximately ±5.5 A to maintain T_ch ≤ 150°C. This rating is confirmed in the Absolute Maximum Ratings table of Renesas Document No. G13803EJ3V0DS00.

Does UPA1803GR-9JG-E1-A require an external gate resistor?

Yes, UPA1803GR-9JG-E1-A benefits from an external gate resistor (typically 10 Ω) to control switching speed and suppress ringing caused by gate-drain Miller capacitance. The datasheet's Test Circuit 1 specifies R_G = 10 Ω for switching time measurements (t_d(on), t_f, etc.), and omitting it risks overshoot, shoot-through in half-bridge configurations, or EMI compliance failure. The device's Q_G = 36 nC and Q_GD = 8.7 nC confirm sensitivity to gate drive impedance.

Can UPA1803GR-9JG-E1-A be used in a high-side configuration with 3.3 V logic control?

No - UPA1803GR-9JG-E1-A is not guaranteed to fully enhance with 3.3 V gate drive. Its R_DS(on)2 specification (16 mΩ max) is defined at V_GS = 4.5 V, and typical V_GS(th) ranges from 1.5–2.5 V. At 3.3 V, R_DS(on) rises significantly (≥40 mΩ), increasing conduction loss and thermal stress. For 3.3 V systems, a gate driver or level shifter is required to deliver ≥4.5 V to the UPA1803GR-9JG-E1-A gate terminal.

What is the purpose of the built-in gate-source protection diode in UPA1803GR-9JG-E1-A?

The built-in gate-source protection diode in UPA1803GR-9JG-E1-A provides electrostatic discharge (ESD) protection rated to ±20 V, meeting JEDEC JS-001 Class 2 HBM requirements. It clamps transient overvoltage between gate and source, preventing oxide breakdown during handling or board insertion. However, Renesas explicitly states that external protection remains necessary if system-level transients exceed ±20 V - the diode is supplemental, not sufficient, for harsh environments.

Is UPA1803GR-9JG-E1-A suitable for automotive applications?

No - UPA1803GR-9JG-E1-A is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and portable electronics. It is not qualified to AEC-Q101, lacks automotive-grade screening (e.g., HTOL, ESD > 8 kV), and its SOA and thermal specs are validated only on ceramic substrates - not automotive-grade PCBs. For automotive use, Renesas recommends its RAJ or RV series MOSFETs instead of the legacy μPA family.

UPA1803GR-9JG-E1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 12mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1880 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

UPA1803GR-9JG-E1-A FAQ

1.How can I place an order for UPA1803GR-9JG-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA1803GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA1803GR-9JG-E1-A reliable?

The price and inventory of UPA1803GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1803GR-9JG-E1-A is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1803GR-9JG-E1-A transactions.

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UPA1803GR-9JG-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA1803GR-9JG-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA1803GR-9JG-E1-A?

For technical support, including UPA1803GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1803GR-9JG-E1-A requirements.

6.How does Aetrix verify that UPA1803GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA1803GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1803GR-9JG-E1-A meets industry standards.

7.What is the process for return or replacement of UPA1803GR-9JG-E1-A?

All UPA1803GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1803GR-9JG-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA1803GR-9JG-E1-A part is unused and in its original packaging.

Return procedure for UPA1803GR-9JG-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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