My Inquiry
My Account
Renesas UPA1804GR-9JG-E1-A
- Part No.:
- UPA1804GR-9JG-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
UPA1804GR-9JG-E1-A.pdf
- Description:
- MOSFET N-CH 30V 8-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,357
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPA1804GR-9JG-E1-A from Renesas Electronics is an N-channel MOSFET designed for low-voltage power switching in portable electronics. It features RDS(on) ≤ 23 mΩ at VGS = 10 V / ID = 4.0 A, supports direct 4.5 V gate drive, and integrates a G-S ESD protection diode. It is used as a main power switch in battery-powered DC-DC converter outputs and load management circuits.
For engineers reviewing the UPA1804GR-9JG-E1-A datasheet, UPA1804GR-9JG-E1-A pinout, UPA1804GR-9JG-E1-A application, or UPA1804GR-9JG-E1-A equivalent, key selection criteria include its 30 V VDSS, ±8.0 A DC drain current rating, 2.0 W power dissipation on ceramic substrate, and Power TSSOP8 package with drain-source thermal layout optimization.
Technical Context
The UPA1804GR-9JG-E1-A employs a trench-gate vertical DMOS structure optimized for fast switching and low conduction loss at logic-level gate drive. Its gate threshold voltage (VGS(off)) ranges from 1.0 V to 2.5 V, enabling reliable turn-on with 4.5 V supply while maintaining low leakage (IDSS ≤ 10 µA at VDS = 30 V).
Switching performance is characterized by td(on) = 24 ns, tr = 83 ns, td(off) = 46 ns, and tf = 29 ns under standard test conditions (VDD = 15 V, RG = 10 Ω), supported by QG = 13.5 nC and QGD = 3.7 nC - indicating moderate gate drive strength requirements for high-frequency operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage for 5 V–12 V system rail switching |
| RDS(on)1 | 23 mΩ max @ VGS = 10 V, ID = 4.0 A - enables <100 mW conduction loss at 4 A load |
| RDS(on)2 | 32 mΩ max @ VGS = 4.5 V, ID = 4.0 A - ensures full enhancement with single Li-ion battery input |
| ID(DC) | ±8.0 A - continuous current capability with derating above 25°C ambient |
| QG | 13.5 nC - determines gate driver current requirement for <100 ns switching transitions |
| Tch max | 150°C - defines maximum junction temperature for thermal design margin |
| Ciss | 761 pF - impacts gate drive loop stability and Miller effect in high-side configurations |
Pinout & Package
UPA1804GR-9JG-E1-A is housed in a Power TSSOP8 package (6.4 mm × 4.4 mm × 1.0 mm), featuring exposed drain pads on pins 1, 5, and 8 for enhanced thermal conduction to PCB copper. The package uses gull-wing leads with 0.65 mm pitch and is rated for mounting on ceramic substrates (5000 mm² × 1.1 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | High-current output node; electrically and thermally connected to exposed pad - must be routed to large copper pour |
| 2, 3, 6, 7 | Source | Power return path; tied to ground plane; forms body diode cathode for reverse recovery handling |
| 4 | Gate | Control input; requires external series resistor (e.g., 10 Ω) to damp ringing per test circuit |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = 4.5 V - eliminates need for gate boosters in single-cell battery systems |
| Integrated G-S ESD protection diode | Provides Class 2 HBM ESD robustness without external components - reduces BOM count in space-constrained layouts |
| Low gate charge (QG = 13.5 nC) | Enables efficient 500 kHz–1 MHz switching with standard microcontroller GPIO or low-power drivers |
| Fast switching (tf = 29 ns) | Minimizes transition losses in high-frequency DC-DC converters - critical for >90% efficiency at light loads |
| Thermally optimized Power TSSOP8 | Exposed drain pads allow 62.5°C/W transient thermal resistance - supports 2.0 W dissipation with proper PCB layout |
Applications
| Portable DC-DC Converter Output Switch | Battery-Powered Load Switch |
|---|---|
Use Scenario: High-efficiency synchronous buck converter output stage in handheld medical monitors and PDAs. IC Role / Device Role / Timing Role: Main N-channel power switch controlling energy transfer to output capacitor and load. Use Value: RDS(on) ≤ 23 mΩ at 10 V gate drive minimizes conduction loss, while 29 ns fall time reduces switching loss at 1 MHz operation. | Use Scenario: Controlled power delivery to USB peripherals or display backlight in tablet PCs. IC Role / Device Role / Timing Role: Low-side load switch enabling ON/OFF control and inrush current limiting via gate slew rate. Use Value: 4.5 V gate threshold allows direct MCU GPIO control; built-in G-S diode suppresses ESD events during hot-plug insertion. |
| USB Power Delivery Path Switch | Industrial Sensor Node Power Gate |
Use Scenario: Bidirectional 5 V power path management between host and peripheral in USB-C accessories. IC Role / Device Role / Timing Role: Reverse-blocking power switch isolating VBUS domains during fault conditions. Use Value: 30 V VDSS provides 2× margin over 5 V USB spec; ±32 A pulse rating handles short-circuit transients. | Use Scenario: Power gating of wireless transceiver modules in battery-operated IIoT edge nodes. IC Role / Device Role / Timing Role: High-reliability load disconnect switch activated by microcontroller wake-up signal. Use Value: Standard-grade qualification supports industrial temperature range (−55°C to +150°C channel temp); low IDSS ≤ 10 µA preserves battery life during sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ3E080BN | RDS(on) = 8.0 mΩ @ VGS = 4.5 V; smaller TSMT8 package (3.0 × 3.0 mm) | Higher current density but lower thermal mass - requires tighter layout control for 8 A DC | Preferred when board space is constrained and gate drive ≥4.5 V is guaranteed |
| Vishay SI2308DS | RDS(on) = 32 mΩ @ VGS = 4.5 V; SOT-23 package with 3.2 A ID(DC) rating | Lower power handling and no exposed drain pad - limited to <1.5 W dissipation | Suitable for sub-3 A loads where cost and footprint outweigh thermal performance needs |
Compared with RQ3E080BN and SI2308DS, the UPA1804GR-9JG-E1-A offers balanced trade-offs: higher RDS(on) than RQ3E080BN but superior thermal performance via Power TSSOP8, and significantly higher current/power capability than SI2308DS - making it optimal for 4–8 A portable power switches requiring robust thermal management.
Availability
UPA1804GR-9JG-E1-A is available at Aetrix Electronics and suitable for portable medical devices, battery-powered instrumentation, and industrial sensor nodes requiring stable component supply across extended production lifecycles.
Supply support for UPA1804GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA1804GR-9JG-E1-A belongs to Renesas' legacy µPA series of logic-level power MOSFETs, engineered specifically for compact, high-efficiency DC power switching in battery-operated consumer and industrial equipment.
FAQ
What is the maximum continuous drain current rating for UPA1804GR-9JG-E1-A?
The UPA1804GR-9JG-E1-A has a rated continuous drain current (ID(DC)) of ±8.0 A at TA = 25°C when mounted on a 5000 mm² ceramic substrate. Derating applies above 25°C ambient - e.g., ~5.5 A at 70°C ambient per the derating curve in the datasheet. This rating assumes proper PCB copper area and thermal vias under the exposed drain pads.
Does UPA1804GR-9JG-E1-A require an external gate resistor?
Yes, the UPA1804GR-9JG-E1-A benefits from an external gate series resistor (typically 5–10 Ω) to control dV/dt and suppress ringing, especially in high-speed switching applications. The datasheet's Test Circuit 1 specifies RG = 10 Ω for switching time measurements, confirming this practice improves reliability and EMI performance.
Is UPA1804GR-9JG-E1-A suitable for automotive applications?
No - the UPA1804GR-9JG-E1-A is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and portable electronics. It is not qualified to AEC-Q101 or rated for automotive temperature ranges (−40°C to +125°C ambient), and lacks automotive-specific reliability testing or PPAP support.
What is the purpose of the built-in gate-to-source protection diode in UPA1804GR-9JG-E1-A?
The built-in gate-to-source diode in the UPA1804GR-9JG-E1-A provides electrostatic discharge (ESD) protection per human-body model (HBM), helping prevent gate oxide damage during handling and assembly. However, Renesas explicitly states that external protection remains necessary if voltages exceeding ±20 V are expected - the internal diode alone does not replace full-system ESD safeguards.
Can UPA1804GR-9JG-E1-A be used in synchronous rectification topologies?
Yes - the UPA1804GR-9JG-E1-A supports synchronous rectification due to its low RDS(on) (23 mΩ max), fast switching (tf = 29 ns), and integrated body diode with trr = 27 ns and Qrr = 16 nC. Its gate threshold and capacitance profile enable clean commutation in secondary-side FET roles of isolated DC-DC converters operating up to 1 MHz.
UPA1804GR-9JG-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.5 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 761 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
UPA1804GR-9JG-E1-A FAQ
1.How can I place an order for UPA1804GR-9JG-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1804GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1804GR-9JG-E1-A reliable?
The price and inventory of UPA1804GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1804GR-9JG-E1-A is usually 5 days.
3.What payment methods are accepted for UPA1804GR-9JG-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1804GR-9JG-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1804GR-9JG-E1-A?
UPA1804GR-9JG-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1804GR-9JG-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1804GR-9JG-E1-A?
For technical support, including UPA1804GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1804GR-9JG-E1-A requirements.
6.How does Aetrix verify that UPA1804GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA1804GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1804GR-9JG-E1-A meets industry standards.
7.What is the process for return or replacement of UPA1804GR-9JG-E1-A?
All UPA1804GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1804GR-9JG-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1804GR-9JG-E1-A part is unused and in its original packaging.
Return procedure for UPA1804GR-9JG-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPA1804GR-9JG-E1-A Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
