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Renesas UPA1809GR-9JG-E1-A
- Part No.:
- UPA1809GR-9JG-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
UPA1809GR-9JG-E1-A.pdf
- Description:
- MOSFET N-CH 30V 8-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,169
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Product details
Overview
UPA1809GR-9JG-E1-A from Renesas Electronics is a dual N-channel MOSFET in Power TSSOP-8 package, designed for high-efficiency DC/DC converter switching and notebook computer power management. It supports 4.0 V gate drive, delivers ≤32 mΩ RDS(on) at VGS = 4.0 V / ID = 4.0 A, and features integrated gate-source ESD protection diodes.
For engineers reviewing the UPA1809GR-9JG-E1-A datasheet, UPA1809GR-9JG-E1-A pinout, UPA1809GR-9JG-E1-A application, or UPA1809GR-9JG-E1-A equivalent, key selection criteria include low-voltage gate drive capability, dual-channel layout for synchronous buck topologies, RDS(on) performance at 4.0–4.5 V, thermal derating on ceramic substrates, and body diode recovery (trr = 24 ns, Qrr = 15 nC).
Technical Context
This device implements two independent N-channel enhancement-mode MOSFETs in a single Power TSSOP-8 package with shared thermal pad. Its gate threshold voltage range (VGS(off) = 1.5–2.5 V) enables reliable turn-on from 4.0 V logic rails, while the low input capacitance (Ciss = 520 pF) and fast switching (td(on) = 11.5 ns, tf = 6.1 ns) support high-frequency PWM operation up to several hundred kHz.
The integrated source-drain body diode exhibits VF(S-D) = 0.85 V at 8.0 A and fast reverse recovery (trr = 24 ns), making it suitable for synchronous rectification where external Schottky replacement is not required. Thermal design must account for 62.5°C/W transient thermal resistance on 5000 mm² ceramic substrate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for DC/DC primary-side switch or synchronous rectifier in ≤12 V input systems. |
| RDS(on) @ VGS=4.0 V | 32 mΩ MAX - Enables efficient operation directly from 4.0 V microcontroller GPIO or PMIC gate drivers without level-shifting. |
| ID(DC) | ±8.0 A - Continuous current rating per channel at TA = 25°C on specified ceramic substrate. |
| QG | 10 nC - Total gate charge determines driver strength requirement and switching loss at target frequency. |
| trr / Qrr | 24 ns / 15 nC - Fast body diode recovery minimizes shoot-through risk and conduction loss in synchronous buck converters. |
| Ciss | 520 pF - Input capacitance impacts gate drive loop stability and required driver peak current. |
Pinout & Package
UPA1809GR-9JG-E1-A uses the Power TSSOP-8 package (6.4 mm × 4.4 mm × 1.0 mm max height) with exposed thermal pad. Pin 1 is Drain1; pins 2–3 are Source1; pin 4 is Gate1; pin 5 is Gate2; pins 6–7 are Source2; pin 8 is Drain2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain1 | High-side switch output node in half-bridge or synchronous buck high-side position. |
| 2,3 | Source1 | Return path for Channel 1; electrically tied to thermal pad for enhanced heat dissipation. |
| 4 | Gate1 | Control input for first N-channel MOSFET; requires 4.0–10 V drive for full enhancement. |
| 5 | Gate2 | Independent control input for second N-channel MOSFET; enables dual-switch or synchronous rectifier configuration. |
| 6,7 | Source2 | Return path for Channel 2; isolated from Source1 to support floating low-side gate drive in half-bridge. |
| 8 | Drain2 | Low-side switch output node; used as synchronous rectifier in buck converters or second switch in load switches. |
Key Features
| Feature | Design Value |
|---|---|
| 4.0 V gate drive compatibility | Operates fully enhanced from standard 4.0 V logic or battery-backed PMIC outputs-no level shifter needed. |
| Dual independent N-channel topology | Enables compact synchronous buck converter designs with single-package high- and low-side switching. |
| Built-in G-S ESD protection diode | Provides Class 2 HBM ESD robustness (per datasheet note); reduces need for external gate protection components. |
| Low RDS(on) at low VGS | 32 mΩ max at 4.0 V ensures <1 W conduction loss at 4 A-critical for thermally constrained notebook PCBs. |
Applications
| DC/DC Synchronous Buck Converter | Notebook Computer Power Management |
|---|---|
Use Scenario: Step-down conversion from 12 V or 19 V adapter input to core CPU voltage (e.g., 1.0–1.5 V) at up to 25 A. IC Role / Device Role / Timing Role: Dual-channel power switch implementing high-side and low-side FETs in single-phase buck regulator. Use Value: Eliminates external Schottky diode and reduces component count; 32 mΩ RDS(on) at 4.0 V enables direct drive from embedded PMIC, lowering BOM cost and layout area. | Use Scenario: Dynamic voltage scaling and multi-rail power sequencing for CPU, GPU, and chipset in ultra-thin laptops. IC Role / Device Role / Timing Role: Primary switching element in VR12/VR13-compliant multiphase controllers' power stages. Use Value: Fast 6.1 ns fall time and 24 ns body diode recovery minimize dead-time losses and improve light-load efficiency over discrete solutions. |
| USB-C PD Power Path Switch | Industrial DC Power Distribution |
Use Scenario: Bidirectional 20 V/3 A power path control in USB-C PD sink applications with reverse-current blocking. IC Role / Device Role / Timing Role: Low-side switch with body diode oriented for forward conduction during normal operation and reverse blocking during fault conditions. Use Value: Integrated 0.85 V body diode forward drop and 30 V VDSS meet USB-C PD 3.0 20 V profile while reducing thermal stress vs. external diode + MOSFET combos. | Use Scenario: Remote-controlled 24 V DC load switching in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Solid-state relay replacement for 8 A resistive/inductive loads with galvanically isolated gate drive. Use Value: ±20 V gate rating and 150°C channel temperature limit allow operation in harsh industrial ambient (−40°C to +85°C) with minimal heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | Single N-channel, SO-8, RDS(on) = 12 mΩ @ 10 V; no 4.0 V drive spec; higher Ciss (1100 pF) | Requires external level shift or 10 V gate drive; unsuitable for direct 4.0 V logic interface | Select only if system uses dedicated 10 V gate driver and needs lower RDS(on) at higher VGS. |
| DMN3022LSD-13 | Dual N-channel, SO-8, RDS(on) = 29 mΩ @ 4.5 V; no 4.0 V RDS(on) spec; trr = 35 ns (slower) | Marginally compatible for 4.5 V drive systems; higher body diode loss in synchronous rectification | Acceptable for cost-sensitive designs where 4.0 V drive is not required and 35 ns trr is acceptable. |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, UPA1809GR-9JG-E1-A uniquely guarantees full enhancement and 32 mΩ RDS(on) at exactly 4.0 V gate voltage-enabling direct interface with low-voltage microcontrollers and simplifying gate drive design in space-constrained portable power systems.
Availability
UPA1809GR-9JG-E1-A is available at Aetrix Electronics and suitable for DC/DC converter design, notebook computer power management, and industrial DC load switching requiring stable component supply and long-term lifecycle support.
Supply support for UPA1809GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for automotive, industrial, and consumer applications.
The µPA1809 product line targets high-efficiency, low-voltage power switching in portable computing and embedded DC/DC systems-designed specifically for 4.0 V logic-compatible operation and compact dual-FET integration.
FAQ
What is the maximum continuous drain current rating for UPA1809GR-9JG-E1-A?
The UPA1809GR-9JG-E1-A has a rated continuous drain current (ID(DC)) of ±8.0 A per channel at TA = 25°C when mounted on a 5000 mm² ceramic substrate. Derating applies above 25°C ambient; at 75°C, usable current drops to approximately 5.5 A per channel based on the published derating curve.
Does UPA1809GR-9JG-E1-A support true 4.0 V gate drive with guaranteed RDS(on)?
Yes. The UPA1809GR-9JG-E1-A datasheet specifies RDS(on)3 = 32 mΩ MAX at VGS = 4.0 V and ID = 4.0 A. This is a production-tested maximum value-not a typical or conditional spec-making UPA1809GR-9JG-E1-A suitable for direct drive from 4.0 V logic or PMIC outputs without level shifting.
What is the purpose of the built-in gate-source protection diode in UPA1809GR-9JG-E1-A?
The built-in gate-source diode in UPA1809GR-9JG-E1-A provides electrostatic discharge (ESD) protection per human-body model (HBM). It clamps transient gate voltage spikes to prevent oxide breakdown. However, the datasheet explicitly states that an external protection circuit remains necessary if operating voltages may exceed ±20 V gate-source rating.
Can UPA1809GR-9JG-E1-A be used in synchronous rectifier configurations?
Yes. UPA1809GR-9JG-E1-A includes a body diode with VF(S-D) = 0.85 V at 8.0 A and trr = 24 ns, enabling use as a synchronous rectifier in buck converters. Its dual-channel structure allows one channel to serve as high-side switch and the other as low-side synchronous rectifier, reducing conduction loss versus Schottky diodes.
What thermal substrate is required to achieve the 2.0 W total power dissipation rating for UPA1809GR-9JG-E1-A?
The 2.0 W total power dissipation (PT) rating for UPA1809GR-9JG-E1-A assumes mounting on a ceramic substrate measuring 5000 mm² × 1.1 mm thickness. On standard FR-4 PCBs (2500 mm² × 1.6 mm), PT derates to ~1.2 W at 25°C ambient-requiring careful thermal design and potentially heatsinking for sustained 8 A operation.
UPA1809GR-9JG-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 520 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
UPA1809GR-9JG-E1-A FAQ
1.How can I place an order for UPA1809GR-9JG-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1809GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1809GR-9JG-E1-A reliable?
The price and inventory of UPA1809GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1809GR-9JG-E1-A is usually 5 days.
3.What payment methods are accepted for UPA1809GR-9JG-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1809GR-9JG-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1809GR-9JG-E1-A?
UPA1809GR-9JG-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1809GR-9JG-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1809GR-9JG-E1-A?
For technical support, including UPA1809GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1809GR-9JG-E1-A requirements.
6.How does Aetrix verify that UPA1809GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA1809GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1809GR-9JG-E1-A meets industry standards.
7.What is the process for return or replacement of UPA1809GR-9JG-E1-A?
All UPA1809GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1809GR-9JG-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1809GR-9JG-E1-A part is unused and in its original packaging.
Return procedure for UPA1809GR-9JG-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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