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Renesas UPA1814GR-9JG-E1-A
- Part No.:
- UPA1814GR-9JG-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
UPA1814GR-9JG-E1-A.pdf
- Description:
- MOSFET P-CH 30V 8-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,773
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Product details
Overview
UPA1814GR-9JG-E1-A from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage DC power switching in portable electronics. It features RDS(on) = 16 mΩ max at VGS = –10 V / ID = –3.5 A, supports direct 4 V gate drive, and integrates a G–S ESD protection diode. It is used as a load switch in battery-powered devices such as PDAs and digital cameras.
For engineers reviewing the UPA1814GR-9JG-E1-A datasheet, UPA1814GR-9JG-E1-A pinout, UPA1814GR-9JG-E1-A application, or UPA1814GR-9JG-E1-A equivalent, key selection criteria include its –30 V VDSS, ±7.0 A ID(DC), 2.0 W power dissipation on ceramic substrate, and compatibility with 4.0–4.5 V logic-level gate drive in compact Power TSSOP8 packaging.
Technical Context
This device operates as a single P-channel silicon MOSFET with a built-in gate–source ESD protection diode. Its threshold voltage range (VGS(off) = –1.0 to –2.5 V) ensures reliable turn-on with low-voltage controllers, while its low input capacitance (Ciss = 2180 pF) and fast switching times (td(on) = 30 ns, tf = 86 ns) support efficient high-frequency PWM control.
The MOSFET's channel temperature rating of 150 °C and derated safe operating area (SOA) up to 100 ms pulses enable robust operation under transient load conditions. Its RDS(on) increases predictably with temperature-e.g., +25% at 125 °C vs. 25 °C under VGS = –4.0 V-supporting thermal-aware design in space-constrained applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V: Maximum drain–source blocking voltage; suitable for 24 V nominal systems with margin. |
| RDS(on) @ VGS = –10 V | 16 mΩ max: Enables <100 mW conduction loss at 3.5 A, reducing thermal load in portable designs. |
| ID(DC) | ±7.0 A: Continuous drain current rating when mounted on 5000 mm² ceramic substrate. |
| QG | 38 nC: Total gate charge determines driver strength requirement for 100 kHz+ switching. |
| VGS(off) | –1.0 to –2.5 V: Gate threshold ensures full enhancement with 3.3 V or 4 V logic outputs. |
| Ciss | 2180 pF: Input capacitance impacts gate drive loop stability and rise time in high-speed switching. |
| Tch max | 150 °C: Maximum channel temperature defines thermal design envelope for PCB layout and heatsinking. |
Pinout & Package
UPA1814GR-9JG-E1-A is housed in a Power TSSOP8 package (6.4 mm × 4.4 mm × 1.0 mm), optimized for surface-mount assembly and thermal performance on ceramic substrates. The exposed drain paddle improves heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | High-current output node; electrically connected to exposed paddle for thermal conduction. |
| 2, 3, 6, 7 | Source | Return path for load current; tied to system ground or negative rail in high-side switch configurations. |
| 4 | Gate | Control input requiring ≤10 µA leakage; driven by 4 V logic with 38 nC total charge for full turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| 4 V gate drive capability | Operates fully enhanced with standard 3.3 V/4 V microcontroller GPIOs-no level shifter required. |
| Built-in G–S ESD protection diode | Provides Class 2 HBM ESD immunity (≥2 kV); reduces need for external TVS in handheld interfaces. |
| Low RDS(on) at low VGS | 24 mΩ max at –4.5 V enables <200 mW loss at 3.5 A-critical for battery runtime in portable gear. |
| Fast switching performance | 140 ns rise time and 86 ns fall time support >500 kHz PWM in DC–DC and LED drivers. |
| Thermally robust SOA | Single-pulse SOA extends to –100 V / –10 A for 1 ms-supports inrush current limiting in hot-swap circuits. |
Applications
| Portable Load Switch | USB Power Delivery Switch |
|---|---|
Use Scenario: Controlling power to auxiliary modules (e.g., GPS, Bluetooth) in handheld medical monitors. IC Role / Device Role / Timing Role: High-side P-channel load switch enabling controlled power-up/down sequencing. Use Value: Low 16 mΩ RDS(on) minimizes voltage drop and self-heating during continuous 3.5 A operation, preserving battery life. | Use Scenario: Enabling/disabling VBUS power paths in USB-C docking stations with legacy 5 V compliance. IC Role / Device Role / Timing Role: Logic-controlled power switch isolating downstream ports during fault conditions. Use Value: 4 V gate drive compatibility allows direct interface with USB PD controller GPIOs without level translation. |
| DC–DC Synchronous Rectifier | Hot-Swap Controller Front-End |
Use Scenario: Secondary-side synchronous rectification in isolated 5 V flyback converters for industrial sensors. IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode in high-efficiency SMPS. Use Value: 0.79 V body diode forward voltage and 24 mΩ RDS(on) at –4.5 V reduce conduction losses by >40% vs. discrete diodes. | Use Scenario: Inrush current limiting and fault isolation in 24 V industrial PLC backplane power rails. IC Role / Device Role / Timing Role: Controlled turn-on switch with SOA-rated pulse handling for surge suppression. Use Value: 28 A pulse rating and 100 ms SOA allow safe absorption of capacitive charging surges without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ –4.5 V; smaller SOT-23 package; lower ID(DC) = 2.6 A. | Suitable only for sub-2 A loads; limited thermal mass for sustained conduction. | Select when board space is critical and current demand is ≤2 A; not recommended for 3.5 A continuous use. |
| AO3401 | RDS(on) = 44 mΩ @ –4.5 V; SO-8 package; higher QG = 12 nC; no integrated G–S diode. | Requires external ESD protection; slower switching due to higher gate charge. | Choose where cost is prioritized over thermal performance and ESD robustness; verify external protection layout. |
Compared with Si2301DDS-T1-GE3 and AO3401, the UPA1814GR-9JG-E1-A delivers superior conduction efficiency at 3.5 A, integrated ESD protection, and faster switching-making it optimal for thermally constrained, medium-power portable switching where reliability and gate-drive simplicity are essential.
Availability
UPA1814GR-9JG-E1-A is available at Aetrix Electronics and suitable for portable load switching, USB power delivery control, DC–DC synchronous rectification, and hot-swap circuitry requiring stable component supply across production lifecycles.
Supply support for UPA1814GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and consumer applications.
The UPA1814GR-9JG-E1-A belongs to Renesas' legacy µPA series of logic-level P-channel MOSFETs, engineered specifically for compact, battery-efficient power switching in portable and space-constrained electronic systems.
FAQ
What is the maximum continuous drain current rating for UPA1814GR-9JG-E1-A?
The UPA1814GR-9JG-E1-A has a rated continuous drain current (ID(DC)) of ±7.0 A when mounted on a 5000 mm² ceramic substrate per the datasheet. This rating assumes proper thermal management; derating is required above 25 °C ambient, with full derating to zero at 100 °C ambient per the derating curve. Actual usable current depends on PCB copper area, airflow, and duty cycle.
Does UPA1814GR-9JG-E1-A require an external gate resistor for typical switching applications?
The UPA1814GR-9JG-E1-A does not mandate an external gate resistor for basic on/off control, but a small series resistor (e.g., 5–22 Ω) is recommended to damp ringing and limit peak gate current during fast transitions. The datasheet specifies switching times (e.g., tr = 140 ns) using RG = 10 Ω, confirming this value provides stable, reproducible performance without oscillation in standard layouts.
Can UPA1814GR-9JG-E1-A be used as a high-side switch with 3.3 V logic control?
Yes, UPA1814GR-9JG-E1-A is explicitly characterized for 4 V gate drive and exhibits RDS(on) = 24 mΩ max at VGS = –4.5 V and ID = –3.5 A. With a 3.3 V logic high referenced to source, VGS ≈ –3.3 V yields usable but higher RDS(on) (~27 mΩ max), making it functional for moderate-current (<2 A) high-side switching where efficiency is secondary to simplicity.
Is the body diode in UPA1814GR-9JG-E1-A suitable for reverse polarity protection?
No-the intrinsic body diode in UPA1814GR-9JG-E1-A conducts from source to drain (S→D), so it cannot block reverse input voltage. For reverse polarity protection, the device must be placed in the high-side position with source connected to input and drain to load; conduction then occurs only when input polarity is correct. The diode's VF(S-D) = 0.79 V at 7.0 A confirms forward conduction capability, but it is not a dedicated protection feature.
What is the quality grade of UPA1814GR-9JG-E1-A per Renesas documentation?
Per Renesas' quality grading policy stated in the datasheet, the UPA1814GR-9JG-E1-A is classified as "Standard" grade unless otherwise specified. This means it is qualified for applications including portable electronics, office equipment, communications devices, and industrial robots-but not for automotive safety-critical, medical life-support, or aerospace systems without explicit requalification and written consent from Renesas Electronics.
UPA1814GR-9JG-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
UPA1814GR-9JG-E1-A FAQ
1.How can I place an order for UPA1814GR-9JG-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1814GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1814GR-9JG-E1-A reliable?
The price and inventory of UPA1814GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1814GR-9JG-E1-A is usually 5 days.
3.What payment methods are accepted for UPA1814GR-9JG-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1814GR-9JG-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1814GR-9JG-E1-A?
UPA1814GR-9JG-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1814GR-9JG-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1814GR-9JG-E1-A?
For technical support, including UPA1814GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1814GR-9JG-E1-A requirements.
6.How does Aetrix verify that UPA1814GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA1814GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1814GR-9JG-E1-A meets industry standards.
7.What is the process for return or replacement of UPA1814GR-9JG-E1-A?
All UPA1814GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1814GR-9JG-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1814GR-9JG-E1-A part is unused and in its original packaging.
Return procedure for UPA1814GR-9JG-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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