Renesas UPA1815GR-9JG-E1-A
- Part No.:
- UPA1815GR-9JG-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
UPA1815GR-9JG-E1-A.pdf
- Description:
- MOSFET P-CH 20V 8-TSSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
UPA1815GR-9JG-E1-A from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring RDS(on) = 15 mΩ max at VGS = –4.5 V and ID = –3.5 A, ±20 V drain-source voltage rating, and Power TSSOP8 package. It is optimized for power switches in portable electronics requiring direct 2.5-V gate drive compatibility.
For engineers reviewing the UPA1815GR-9JG-E1-A datasheet, UPA1815GR-9JG-E1-A pinout, UPA1815GR-9JG-E1-A application, or UPA1815GR-9JG-E1-A equivalent, key selection criteria include low-threshold gate drive capability (–2.5 V operational), body diode recovery performance (trr = 60 ns), and thermal derating on ceramic substrate - critical for compact DC-DC load switches and battery protection circuits.
Technical Context
This device operates as a single P-channel silicon MOSFET with integrated gate-source ESD protection diode. Its threshold voltage range (VGS(off) = –0.5 to –1.5 V) enables reliable turn-on with logic-level gate signals down to 2.5 V, while its 2.0 W total power dissipation (on 5000 mm² ceramic substrate) supports pulsed operation up to ±26 A (10 µs, 1% duty).
The device exhibits strong transconductance (|yfs| = 9–19 S), fast switching (td(on) = 45 ns, tf = 160 ns), and controlled capacitive behavior (Ciss = 3000 pF, Coss = 790 pF), making it suitable for synchronous rectification and high-side load switching where gate charge (QG = 25 nC) and reverse recovery (Qrr = 45 nC) directly impact efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum blocking voltage for use in ≤20-V rail systems like USB PD, Li-ion battery packs, and 12-V industrial I/O. |
| RDS(on) @ VGS = –4.5 V | 15 mΩ max: Enables <100 mW conduction loss at 3.5 A, supporting thermally constrained portable PCB layouts. |
| ID(DC) | ±7 A: Continuous current rating defining safe steady-state operation with appropriate heatsinking. |
| trr | 60 ns: Body diode reverse recovery time enabling use in discontinuous-conduction-mode (DCM) flyback or buck converters without excessive ringing. |
| QG | 25 nC: Total gate charge determining required driver strength and switching loss in high-frequency (>100 kHz) applications. |
| Tch max | 150 °C: Maximum channel temperature limiting junction-to-ambient thermal design margin under sustained load. |
| Ciss | 3000 pF: Input capacitance influencing gate drive loop stability and Miller effect during high dv/dt transitions. |
Pinout & Package
UPA1815GR-9JG-E1-A is housed in Power TSSOP8 (8-pin thin shrink small outline package) with exposed drain pad for thermal enhancement. Pin 1, 5, and 8 are internally connected to drain; pins 2, 3, and 6 connect to source; pin 4 is gate. The package supports surface-mount assembly and requires careful layout of the drain thermal pad per Renesas' mounting guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | High-current output node; electrically and thermally tied to exposed pad - must be soldered to large copper area for thermal management. |
| 2, 3, 6 | Source | Reference node for gate drive and current return path; multiple pins reduce source inductance in high-di/dt switching. |
| 4 | Gate | Control input requiring low-impedance drive; internal ESD diode to source protects against ±12 V transients but external clamping recommended. |
| 7 | Source | Additional source connection - used to minimize common-source inductance in high-frequency switching paths. |
Key Features
| Feature | Design Value |
|---|---|
| 2.5-V logic-compatible gate drive | Operates fully enhanced at VGS = –2.5 V (RDS(on) ≤ 23 mΩ), eliminating need for level shifters in 3.3-V/2.5-V microcontroller interfaces. |
| Low RDS(on) with scalable VGS | RDS(on) drops from 23 mΩ at –2.5 V to 15 mΩ at –4.5 V, allowing system-level trade-off between gate drive voltage and conduction loss. |
| Fast body diode recovery | trr = 60 ns and Qrr = 45 nC enable efficient freewheeling in synchronous buck topologies without external Schottky supplementation. |
| ESD-protected gate structure | Integrated gate-source diode provides Class 2 HBM ESD robustness (per datasheet note), reducing need for external TVS in board-level protection schemes. |
| Thermally optimized Power TSSOP8 | Exposed drain pad and multi-pin source/drain configuration lower thermal resistance (rth(ch–A) = 62.5 °C/W single-pulse), supporting higher power density than standard SO-8. |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs for smartphones and wearables. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated by protection IC's gate control signal. Use Value: Low RDS(on) minimizes voltage drop across switch during normal operation, preserving battery runtime; 2.5-V compatibility allows direct interface with low-voltage protection ASICs. | Use Scenario: VBUS path switching in USB-C receptacles supporting 5–20 V bidirectional power negotiation. IC Role / Device Role / Timing Role: Bidirectional high-side switch enabling source/sink role reversal; driven by USB PD controller GPIO. Use Value: –20 V VDSS safely handles 20 V PD profiles; fast tf/tr ensures clean transition during role swap without bus glitching. |
| Industrial I/O Module Load Switch | Portable DC-DC Converter High-Side Switch |
Use Scenario: Controlled power-up sequencing of field sensors and actuators in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Programmable load switch isolating downstream 12-V or 24-V loads from main supply rail. Use Value: ±7 A ID(DC) supports typical sensor/valve loads; thermal derating curve enables stable operation at 70 °C ambient without forced air. | Use Scenario: High-side synchronous rectifier in 3.3-V or 5-V buck converters powering FPGA or SoC cores in handheld test equipment. IC Role / Device Role / Timing Role: Active rectification element replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: Qrr = 45 nC and trr = 60 ns reduce switching losses and EMI vs. discrete diodes; low Coss maintains stable regulation under dynamic load steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ –2.5 V (higher conduction loss); SOT-23 package (lower power handling). | Targeted at ultra-low-power always-on circuits (<500 mA), not high-current load switching. | Select only for space-constrained, sub-1-A applications where thermal budget permits higher RDS(on). |
| AO3401 | RDS(on) = 55 mΩ @ –2.5 V; SO-8 package; no specified trr or Qrr in datasheet. | Suitable for general-purpose load switching but lacks documented fast-recovery body diode for synchronous rectification. | Prefer for cost-sensitive, non-synchronous designs where diode recovery is not critical. |
Compared with Si2301DDS-T1-GE3 and AO3401, UPA1815GR-9JG-E1-A delivers superior conduction efficiency at 3.5 A and verified fast body diode performance - essential for high-density, thermally limited portable power architectures requiring both low loss and clean switching transitions.
Availability
UPA1815GR-9JG-E1-A is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, and industrial I/O module load switching requiring stable component supply and long-term manufacturability.
Supply support for UPA1815GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and consumer markets.
The µPA1815 product line targets low-voltage, high-efficiency power switching in portable and space-constrained electronics, emphasizing logic-level gate drive, thermal performance in small packages, and robust body diode characteristics.
FAQ
What is the maximum continuous drain current rating for UPA1815GR-9JG-E1-A?
The UPA1815GR-9JG-E1-A has a rated continuous drain current (ID(DC)) of ±7 A at TA = 25 °C when mounted on a 5000 mm² ceramic substrate. This rating decreases with rising ambient temperature per the derating curve in the datasheet, reaching zero at approximately 125 °C ambient. Actual usable current depends on PCB layout, copper area, and airflow - the UPA1815GR-9JG-E1-A must be thermally anchored via its exposed drain pad to sustain rated current.
Does UPA1815GR-9JG-E1-A support direct 2.5-V gate drive?
Yes, UPA1815GR-9JG-E1-A is explicitly characterized for 2.5-V operation: RDS(on) is guaranteed ≤23 mΩ at VGS = –2.5 V and ID = –3.5 A. Its gate threshold range (VGS(off) = –0.5 to –1.5 V) ensures full enhancement well below –2.5 V, enabling reliable switching with 2.5-V or 3.3-V logic outputs without external level shifting - a core design feature confirmed in the "FEATURES" section of the D13805EJ3V0DS datasheet.
What is the body diode reverse recovery time (trr) of UPA1815GR-9JG-E1-A?
The body diode reverse recovery time trr of UPA1815GR-9JG-E1-A is 60 ns, measured at IF = 7 A, VGS = 0 V, and di/dt = 100 A/µs. This value is specified in the "ELECTRICAL CHARACTERISTICS" table and supports use in high-frequency DC-DC converters where fast freewheeling is required. The associated Qrr is 45 nC, confirming low stored charge that reduces switching loss and voltage overshoot during commutation.
Is UPA1815GR-9JG-E1-A pin-compatible with other Power TSSOP8 P-channel MOSFETs?
No documented pin-to-pin compatibility exists between UPA1815GR-9JG-E1-A and other Power TSSOP8 P-channel MOSFETs. While the package footprint matches standard Power TSSOP8 (8-pin, 0.65-mm pitch), internal pin assignments - particularly the multi-pin drain/source configuration (pins 1/5/8 = drain; 2/3/6/7 = source) - are specific to this Renesas device. Substitution requires verification of both pin mapping and electrical parameters; UPA1815GR-9JG-E1-A must not be assumed interchangeable without schematic and layout review.
What quality grade applies to UPA1815GR-9JG-E1-A per Renesas documentation?
UPA1815GR-9JG-E1-A is classified as "Standard" quality grade per Renesas' official documentation (D13805EJ3V0DS, page 7). This designation confirms suitability for applications including portable electronics, office equipment, communications devices, and industrial robots - but excludes safety-critical, automotive, medical life-support, or aerospace uses unless explicitly requalified and approved in writing by Renesas Electronics.
UPA1815GR-9JG-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 4 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
UPA1815GR-9JG-E1-A FAQ
1.How can I place an order for UPA1815GR-9JG-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1815GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1815GR-9JG-E1-A reliable?
The price and inventory of UPA1815GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1815GR-9JG-E1-A is usually 5 days.
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5.How can I obtain technical support or documentation for UPA1815GR-9JG-E1-A?
For technical support, including UPA1815GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1815GR-9JG-E1-A requirements.
6.How does Aetrix verify that UPA1815GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA1815GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1815GR-9JG-E1-A meets industry standards.
7.What is the process for return or replacement of UPA1815GR-9JG-E1-A?
All UPA1815GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1815GR-9JG-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1815GR-9JG-E1-A part is unused and in its original packaging.
Return procedure for UPA1815GR-9JG-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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