Renesas UPA1816GR-9JG-E1-A

Overview

UPA1816GR-9JG-E1-A from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage switching in power management circuits. It supports 1.8 V gate drive, delivers ≤15 mΩ R_DS(on) at −4.5 V_GS, handles −9.0 A DC drain current, and features integrated gate-source ESD protection diode. It is used in notebook computer power rails and load-switching applications.

For engineers reviewing the UPA1816GR-9JG-E1-A datasheet, UPA1816GR-9JG-E1-A pinout, UPA1816GR-9JG-E1-A application, or UPA1816GR-9JG-E1-A equivalent, key selection criteria include 1.8 V logic compatibility, low R_DS(on) at sub-2.5 V_GS, pulse-rated 36 A capability, thermal performance on ceramic substrate, and Power TSSOP8 package constraints.

Technical Context

This device operates as a single P-channel MOSFET with depletion-free enhancement-mode behavior, requiring negative gate-to-source voltage for conduction. Its gate threshold (V_GS(off)) ranges from −0.45 V to −1.5 V, enabling reliable turn-on with low-voltage controllers. The built-in G-S protection diode provides ESD immunity but does not replace external overvoltage clamping.

Switching performance is characterized by 16 ns turn-on delay, 132 ns rise time, and 223 ns turn-off delay under −10 V_DD/−4.5 A conditions with 10 Ω gate resistance. Total gate charge is 15 nC, with Q_GD = 4.5 nC, indicating moderate Miller effect and suitability for medium-frequency DC-DC and load-switching topologies.

Key Specifications

Pinout & Package

UPA1816GR-9JG-E1-A is housed in Power TSSOP8 (JEDEC MO-153 variant), thermally enhanced with exposed drain paddle. Package dimensions: 6.4 mm × 4.4 mm × 1.2 mm max, 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with UPA1816GR-9JG-E1-A, Si2301DDS-T1-GE3 trades off current capacity and thermal performance for miniaturization, while AO3401 offers broader vendor availability but sacrifices low-voltage drive capability and ESD hardening-making UPA1816GR-9JG-E1-A optimal for compact, 1.8–2.5 V logic-driven power switches demanding reliability and integration.

Availability

UPA1816GR-9JG-E1-A is available at Aetrix Electronics and suitable for notebook power management, USB port protection, and industrial digital output modules requiring stable component supply and long-term obsolescence planning.

Supply support for UPA1816GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The µPA1816 product line targets low-voltage, high-efficiency power switching in portable computing and peripheral interfaces, emphasizing 1.8 V logic compatibility and integrated protection for simplified system design.

FAQ

What is the maximum continuous drain current rating for UPA1816GR-9JG-E1-A?

The UPA1816GR-9JG-E1-A has a DC drain current rating of −9.0 A at T_A = 25°C when mounted on a 5000 mm² ceramic substrate. This rating decreases with rising ambient temperature per the derating curve in the datasheet; at 75°C ambient, the usable DC current drops to approximately −6.5 A. The UPA1816GR-9JG-E1-A must be used within these thermal limits to avoid exceeding 150°C channel temperature.

Does UPA1816GR-9JG-E1-A require an external gate resistor?

Yes, a gate resistor is recommended for UPA1816GR-9JG-E1-A to suppress ringing and control switching speed. The datasheet specifies switching times measured with R_G = 10 Ω. Using no gate resistor may cause oscillation due to PCB trace inductance interacting with C_iss and C_rss. For EMI-sensitive applications, a 10–47 Ω surface-mount resistor placed adjacent to the UPA1816GR-9JG-E1-A gate pin is standard practice.

Can UPA1816GR-9JG-E1-A operate reliably with a 1.8 V gate drive?

Yes, UPA1816GR-9JG-E1-A is explicitly characterized for 1.8 V gate drive: R_DS(on)4 = 41.5 mΩ MAX at V_GS = −1.8 V and I_D = −2.5 A. Its gate threshold range (−0.45 V to −1.5 V) ensures strong enhancement even with marginal gate drive. However, conduction loss increases significantly below −2.5 V_GS, so UPA1816GR-9JG-E1-A is best applied where 1.8 V represents the minimum, not typical, drive level.

Is the drain pad of UPA1816GR-9JG-E1-A electrically isolated from the package leads?

No, the exposed drain paddle of UPA1816GR-9JG-E1-A is electrically connected to pins 5, 6, 7, and 8 (all drain terminals). It must be soldered to a PCB copper pour tied to the drain net for both electrical conduction and thermal dissipation. Floating or grounding the paddle violates the device's internal construction and compromises safe operating area and power handling.

What is the role of the built-in gate-source protection diode in UPA1816GR-9JG-E1-A?

The built-in gate-source diode in UPA1816GR-9JG-E1-A provides electrostatic discharge (ESD) protection rated to ≥2 kV HBM. It clamps transient positive voltage spikes on the gate relative to source, preventing oxide breakdown. However, it does not protect against sustained overvoltage or negative transients beyond −8.0 V_GSS, nor does it replace external TVS or RC snubbers in noisy environments. The UPA1816GR-9JG-E1-A remains susceptible to latch-up if gate voltage exceeds absolute maximum ratings.