Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas UPA1820GR-9JG-E1-A

Part No.:
UPA1820GR-9JG-E1-A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixUPA1820GR-9JG-E1-A.pdf
Description:
MOSFET N-CH 20V 12A 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:21,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

UPA1820GR-9JG-E1-A from Renesas Electronics is a dual N-channel MOSFET in Power TSSOP-8 package, rated for 20 V VDSS, ±12 A DC drain current, and featuring RDS(on) as low as 6.8 mΩ at VGS = 4.5 V. It supports direct 2.5 V gate drive and integrates gate-source ESD protection diodes. It is designed for high-efficiency synchronous rectification and power switching in notebook computer DC/DC converters.

For engineers reviewing the UPA1820GR-9JG-E1-A datasheet, UPA1820GR-9JG-E1-A pinout, UPA1820GR-9JG-E1-A application, or UPA1820GR-9JG-E1-A equivalent, key selection criteria include its dual-channel layout, 2.5 V logic-level drivability, low RDS(on) at sub-4.5 V gate bias, integrated G-S ESD diode, and thermal performance on ceramic substrates.

Technical Context

The UPA1820GR-9JG-E1-A integrates two independent N-channel enhancement-mode MOSFETs in a single Power TSSOP-8 package with shared source terminals per channel (pins 2–3 = Source1, pins 6–7 = Source2). Its gate threshold voltage VGS(off) ranges from 0.5 V to 1.5 V, enabling reliable turn-on with 2.5 V logic. The device exhibits fast switching with td(on) = 18 ns and tf = 52 ns under specified test conditions.

It features a built-in gate-source protection diode per channel but requires external overvoltage protection when subjected to transients exceeding ±12 V VGSS. Its safe operating area (SOA) is defined up to 100 ms pulse width at TA = 25°C on ceramic substrate, with RDS(on) limited conduction boundary dominating at high VDS.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - Maximum blocking voltage before avalanche; sets upper limit for input/output rail in buck converter top/bottom switches.
RDS(on) @ VGS = 4.5 V6.8 mΩ (typ), 8.6 mΩ (max) - Enables <100 mW conduction loss at 6 A DC, critical for thermally constrained notebook power stages.
ID(DC)±12 A - Continuous current rating per channel; defines maximum steady-state load handling without derating on ceramic substrate.
QG27 nC - Total gate charge determines driver strength requirement; compatible with standard PWM controller gate drivers.
tr/tf56 ns / 52 ns - Fast edge rates reduce switching losses in high-frequency (≥300 kHz) DC/DC designs.
VGS(th)0.5–1.5 V - Low threshold enables full enhancement with 2.5 V logic supply, eliminating level-shifting in compact systems.
Ciss2020 pF - Input capacitance impacts gate drive loop stability and Miller effect during hard switching.

Pinout & Package

UPA1820GR-9JG-E1-A is housed in a Power TSSOP-8 package (6.4 mm × 4.4 mm × 1.0 mm max height) with exposed drain pads for thermal enhancement. Pin 1 and Pin 8 are Drain1 and Drain2 respectively; pins 2–3 form Source1, pins 6–7 form Source2; pins 4 and 5 are Gate1 and Gate2.

Pin/TerminalCircuit RoleDesign Meaning
1Drain1Main current path for Channel 1; electrically connected to exposed pad for thermal conduction to PCB.
2, 3Source1Reference node for Channel 1; tied to local ground or low-side switch node in synchronous buck configuration.
4Gate1Control terminal for Channel 1; requires ≤12 V drive; protected by internal G-S diode.
5Gate2Independent control terminal for Channel 2; enables dual-switching or parallel operation without cross-talk.
6, 7Source2Reference node for Channel 2; may be tied to Source1 for paralleling or kept separate for isolated half-bridge use.
8Drain2Main current path for Channel 2; symmetric layout to Pin 1 for balanced thermal distribution.

Key Features

FeatureDesign Value
2.5 V logic-compatible gate driveGuarantees full enhancement at VGS = 2.5 V (RDS(on) ≤ 12 mΩ), enabling direct interface with low-voltage microcontrollers and PMICs.
Dual N-channel topology in single packageReduces board space and layout complexity in synchronous rectifier or dual-phase DC/DC applications versus discrete solutions.
Built-in gate-source ESD protection diodesProvides Class 2 HBM ESD robustness (per datasheet note), reducing need for external TVS in non-harsh environments.
Low QGD/QG ratio (13 nC / 27 nC)Minimizes Miller-induced shoot-through risk during hard switching, improving reliability in high-dV/dt applications.
Thermally optimized Power TSSOP-8Exposed drain pads allow >1.5 W dissipation on 5000 mm² ceramic substrate, supporting compact high-power density designs.

Applications

High-Efficiency Notebook DC/DC ConverterSynchronous Buck Regulator for CPU Core Supply

Use Scenario: Step-down conversion from 12 V or 5 V input to 1.0–1.8 V output delivering up to 25 A to mobile CPU cores.

IC Role / Device Role / Timing Role: Dual N-channel MOSFET used as synchronous rectifier (low-side) and active switch (high-side) in single-phase buck stage.

Use Value: RDS(on) ≤ 8.8 mΩ at 4.0 V gate drive reduces conduction loss by >30% vs. older 12 V gate-driven MOSFETs, extending battery runtime.

Use Scenario: High-current, high-switching-frequency (500 kHz–1 MHz) point-of-load regulator on ultrabook motherboard.

IC Role / Device Role / Timing Role: Configured as dual low-side switches in multiphase interleaved architecture or as redundant channel for fault-tolerant design.

Use Value: Matched RDS(on) and QG between channels ensures balanced current sharing and eliminates phase-skew-induced ripple.

USB-C PD Power Path SwitchIndustrial 24 V DC/DC Intermediate Bus Converter

Use Scenario: Bidirectional 20 V/3 A power path management between USB-C port and system battery in portable devices.

IC Role / Device Role / Timing Role: Used as back-to-back configured N-MOSFET pair to block reverse current and support USB PD 3.0 programmable power supply negotiation.

Use Value: 20 V VDSS and 2.5 V drive compatibility enable direct integration with USB PD controller GPIOs without level shifters.

Use Scenario: 24 V input to 5 V/12 V intermediate bus conversion in factory automation I/O modules with space constraints.

IC Role / Device Role / Timing Role: Employed as primary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: Low Ciss (2020 pF) and fast tf (52 ns) minimize switching losses at 300–400 kHz, improving efficiency above 92% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7852DP-T1-GE330 V VDSS, RDS(on) = 9.5 mΩ @ 4.5 V, SO-8 package, no integrated G-S diode.Higher voltage rating suits 24 V industrial rails; lacks on-chip ESD protection requiring external diodes.Select when higher blocking voltage or SO-8 footprint compatibility is required; verify external ESD protection.
DMN3022LSD-1330 V VDSS, RDS(on) = 12.5 mΩ @ 4.5 V, dual N-channel in SO-8, no G-S diode, QG = 11 nC.Lower gate charge reduces driver loading but higher RDS(on) increases conduction loss at >5 A.Prefer for lower-power, high-frequency applications where gate drive strength is limited; not suitable for 12 A DC loads.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, the UPA1820GR-9JG-E1-A offers superior 2.5 V drive capability and integrated ESD protection-critical for space-constrained, low-voltage notebook power stages-while trading off voltage rating and gate charge for lower on-resistance at mid-range gate voltages.

Availability

UPA1820GR-9JG-E1-A is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, notebook power management systems, and USB-C PD power path switching requiring stable component supply and long-lifecycle support.

Supply support for UPA1820GR-9JG-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for automotive, industrial, and consumer applications.

The UPA1820GR-9JG-E1-A belongs to Renesas' legacy µPA series of logic-level power MOSFETs, engineered specifically for high-density, low-voltage power conversion in portable computing and battery-powered systems.

FAQ

What is the maximum continuous drain current rating for UPA1820GR-9JG-E1-A?

The UPA1820GR-9JG-E1-A is rated for ±12 A DC drain current per channel at TA = 25°C when mounted on a 5000 mm² ceramic substrate. This rating assumes proper thermal management; derating is required above 25°C ambient or on FR-4 boards. The device's RDS(on) and SOA curves must be consulted to confirm safe operation under actual board-level thermal conditions for UPA1820GR-9JG-E1-A.

Does UPA1820GR-9JG-E1-A support true 2.5 V gate drive across its full current range?

Yes - the UPA1820GR-9JG-E1-A guarantees RDS(on) ≤ 12 mΩ at VGS = 2.5 V and ID = 6.0 A, confirming full enhancement at 2.5 V logic levels. Its VGS(off) range (0.5–1.5 V) ensures robust turn-on margin. This makes UPA1820GR-9JG-E1-A suitable for direct drive from 2.5 V GPIOs or low-voltage PMIC outputs without level shifting.

What is the purpose of the internal gate-source protection diode in UPA1820GR-9JG-E1-A?

The internal gate-source diode in UPA1820GR-9JG-E1-A provides electrostatic discharge (ESD) protection per the datasheet's Class 2 HBM specification. It clamps transient gate overvoltage but does not replace external protection when sustained overvoltage (>±12 V) or fast transients are expected. Designers must still implement external TVS or RC networks for robust system-level ESD immunity in UPA1820GR-9JG-E1-A applications.

Can UPA1820GR-9JG-E1-A be used in synchronous rectifier configurations?

Yes - UPA1820GR-9JG-E1-A is explicitly designed for synchronous rectification in DC/DC converters. Its low RDS(on), fast switching (tf = 52 ns), and matched dual-channel structure allow efficient replacement of Schottky diodes in buck, boost, and flyback topologies. The body diode VF(S-D) = 0.81 V at 12 A further supports low-loss freewheeling in UPA1820GR-9JG-E1-A-based synchronous rectifiers.

Is UPA1820GR-9JG-E1-A qualified for automotive applications?

No - UPA1820GR-9JG-E1-A is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics. It is not AEC-Q101 qualified and lacks automotive-specific stress testing, failure rate data, or extended temperature support. For automotive use, designers must select Renesas' "High Quality" or AEC-Q101-certified alternatives instead of UPA1820GR-9JG-E1-A.

UPA1820GR-9JG-E1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 4 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
2020 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

UPA1820GR-9JG-E1-A FAQ

1.How can I place an order for UPA1820GR-9JG-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA1820GR-9JG-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA1820GR-9JG-E1-A reliable?

The price and inventory of UPA1820GR-9JG-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1820GR-9JG-E1-A is usually 5 days.

3.What payment methods are accepted for UPA1820GR-9JG-E1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1820GR-9JG-E1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA1820GR-9JG-E1-A?

UPA1820GR-9JG-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA1820GR-9JG-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA1820GR-9JG-E1-A?

For technical support, including UPA1820GR-9JG-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1820GR-9JG-E1-A requirements.

6.How does Aetrix verify that UPA1820GR-9JG-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA1820GR-9JG-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1820GR-9JG-E1-A meets industry standards.

7.What is the process for return or replacement of UPA1820GR-9JG-E1-A?

All UPA1820GR-9JG-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA1820GR-9JG-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA1820GR-9JG-E1-A part is unused and in its original packaging.

Return procedure for UPA1820GR-9JG-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPA1820GR-9JG-E1-A Tags

  • UPA1820GR-9JG-E1-A
  • UPA1820GR-9JG-E1-A PDF
  • UPA1820GR-9JG-E1-A Datasheet
  • UPA1820GR-9JG-E1-A Specifications
  • UPA1820GR-9JG-E1-A Images
  • Renesas
  • Renesas UPA1820GR-9JG-E1-A
  • Buy UPA1820GR-9JG-E1-A
  • UPA1820GR-9JG-E1-A Price
  • UPA1820GR-9JG-E1-A Distributor
  • UPA1820GR-9JG-E1-A Supplier
  • UPA1820GR-9JG-E1-A Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER