Renesas UPA1911ATE-T1-A

Overview

UPA1911ATE-T1-A from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring R_DS(on) = 115 mΩ max at V_GS = –4.5 V / I_D = –1.5 A, –20 V V_DSS, and direct 2.5 V gate drive capability. It is used as a load switch in portable electronics power rails.

For engineers reviewing the UPA1911ATE-T1-A datasheet, UPA1911ATE-T1-A pinout, UPA1911ATE-T1-A application, or UPA1911ATE-T1-A equivalent, key selection criteria include guaranteed 2.5 V logic-level turn-on, integrated ESD protection diode, SC-95 package thermal performance on FR-4, and body diode reverse recovery time of 14 ns for synchronous or flyback configurations.

Technical Context

This device operates as a single P-channel silicon MOSFET with depletion-mode gate structure requiring negative gate-to-source bias for conduction. Its channel temperature rating of 150°C and derated DC power dissipation (2 W on FR-4, 0.2 W free-air) define thermal boundary conditions for PCB layout.

Switching behavior is characterized by 130 ns turn-on delay, 230 ns rise time, and 470 ns turn-off delay under V_DD = –10 V, I_D = –1.5 A, and R_G = 10 Ω test conditions; total gate charge is 2.3 nC, with Q_GS and Q_GD each at 1.0 nC - indicating balanced Miller and input charge distribution for predictable gate driver sizing.

Key Specifications

Pinout & Package

UPA1911ATE-T1-A is housed in an SC-95 (Mini Mold Thin Type) surface-mount package with exposed drain pads for thermal conduction. The package measures 2.9 mm × 1.9 mm × 0.95 mm and features six terminals arranged in a single row.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with Si2301DDS-T1-GE3 and AO3401, the UPA1911ATE-T1-A uniquely combines guaranteed 2.5 V drive, integrated gate protection, and SC-95 thermal performance - making it optimal for compact, battery-powered designs where gate drive voltage headroom and layout density are critical.

Availability

UPA1911ATE-T1-A is available at Aetrix Electronics and suitable for smartphone power management, USB-C port switching, wireless headset battery protection, and industrial sensor node power gating requiring stable component supply across long-lifecycle consumer and industrial programs.

Supply support for UPA1911ATE-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.

The UPA1911ATE-T1-A belongs to Renesas' legacy µPA series of logic-level P-channel MOSFETs, engineered specifically for space-constrained, battery-operated portable equipment requiring direct low-voltage gate drive and fast switching.

FAQ

What is the maximum continuous drain current rating for UPA1911ATE-T1-A under standard PCB mounting conditions?

The UPA1911ATE-T1-A supports a continuous drain current of –2.5 A when mounted on a standard 50 mm × 50 mm × 1.6 mm FR-4 board with copper pad connection to the drain terminals. This rating assumes ambient temperature of 25°C and accounts for the device's 2 W total power dissipation limit under those conditions. Derating is required above 25°C ambient per the published derating curve in the datasheet.

Does UPA1911ATE-T1-A include built-in ESD protection, and if so, what is its implementation?

Yes, the UPA1911ATE-T1-A integrates a gate-to-source protection diode as part of its internal structure, as confirmed in the Equivalent Circuit diagram and noted in the datasheet remarks. This diode provides basic electrostatic discharge protection, but Renesas explicitly states that an external protection circuit remains mandatory if voltages exceeding the ±12 V gate rating may occur in the application. The UPA1911ATE-T1-A itself is not rated for standalone ESD immunity beyond this internal element.

Can UPA1911ATE-T1-A be used with a 2.5 V microcontroller GPIO without additional level-shifting circuitry?

Yes, the UPA1911ATE-T1-A is explicitly specified to operate with a –2.5 V gate-to-source voltage, delivering R_DS(on) ≤ 190 mΩ at –1.0 A drain current. This makes it compatible with 2.5 V logic systems without level shifters. However, designers must ensure the driving GPIO can sink sufficient current to charge the 370 pF input capacitance within required switching times, especially given the device's 2.3 nC total gate charge.

What is the body diode forward voltage and reverse recovery performance of UPA1911ATE-T1-A?

The UPA1911ATE-T1-A body diode exhibits a forward voltage of 0.84 V at 2.5 A and V_GS = 0 V, and demonstrates fast recovery with t_rr = 14 ns and Q_rr = 1.4 nC under IF = 2.5 A and di/dt = 10 A/µs. These values are measured with the gate grounded, confirming suitability for freewheeling paths in high-frequency DC-DC converters where low recovery loss is essential.

Is UPA1911ATE-T1-A qualified for automotive applications, and what quality grade does it carry?

No, the UPA1911ATE-T1-A is classified as a "Standard" quality grade device per Renesas' documentation, intended for applications including portable electronics, office equipment, and communications gear. It is not qualified for automotive use - which requires "High Quality" grade parts with extended temperature range, AEC-Q101 qualification, and enhanced reliability testing. The datasheet confirms no explicit automotive qualification or extended temperature rating beyond –55°C to +150°C storage.