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Renesas UPA1919TE-T1-AT
- Part No.:
- UPA1919TE-T1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-95-6
- Datasheet:
-
UPA1919TE-T1-AT.pdf
- Description:
- MOSFET P-CH 20V SC-95
- Quantity:
- Payment:
- Shipping:
Inventory:8,639
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Product details
Overview
UPA1919TE-T1-AT from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage switching applications, featuring 2.5 V gate drive capability, RDS(on) ≤ 58 mΩ at VGS = −4.5 V / ID = −3.0 A, and SC-95 (Mini Mold Thin) package with six terminals. It serves as a compact power switch in portable electronics battery management and load switching circuits.
For engineers reviewing the UPA1919TE-T1-AT datasheet, UPA1919TE-T1-AT pinout, UPA1919TE-T1-AT application, or UPA1919TE-T1-AT equivalent, key selection criteria include verified 2.5 V logic-level drive compatibility, pulsed drain current rating of −24 A, thermal performance on FR-4 boards, and integrated body diode forward voltage of 0.93 V at 6.0 A - all critical for space-constrained DC-DC and power-path designs.
Technical Context
This device operates as a single P-channel silicon MOSFET with depletion-mode gate protection diode and built-in ESD protection between gate and source. Its channel temperature rating of 150 °C and −20 V VDSS support operation in battery-powered systems where reverse-polarity protection and low quiescent loss are required.
The MOSFET exhibits gate charge parameters QG = 6.0 nC, QGS = 1.5 nC, and QGD = 2.4 nC at VDD = −16 V, enabling fast switching with turn-on delay of 15 ns and fall time of 65 ns under defined test conditions (VDD = −10 V, RG = 10 Ω), suitable for high-efficiency synchronous rectification and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3 V/5 V rail switching and battery disconnect applications. |
| RDS(on) max | 58 mΩ at VGS = −4.5 V / ID = −3.0 A - Low conduction loss enables <175 mW power dissipation at 3 A DC, reducing thermal load on small PCBs. |
| ID(DC) | −6.0 A - Continuous drain current rating at TA = 25 °C; supports sustained load switching in handheld devices and wearables. |
| QG | 6.0 nC - Total gate charge determines driver strength requirement; compatible with low-power GPIO or dedicated gate drivers like TC4427. |
| VGS(off) | −0.5 to −1.5 V - Gate threshold range confirms reliable turn-off at 0 V gate bias and stable operation down to 2.5 V logic levels. |
| Ciss | 680 pF - Input capacitance impacts gate drive timing and EMI; value aligns with sub-10 ns switching performance in compact layouts. |
| VF(S-D) | 0.93 V at IF = 6.0 A - Body diode forward voltage sets reverse-current path loss during freewheeling or back-to-back configuration. |
Pinout & Package
UPA1919TE-T1-AT is housed in the SC-95 (Mini Mold Thin) surface-mount package, measuring 2.9 mm × 1.9 mm × 0.65 mm, optimized for high-density portable PCBs. The package exposes four parallel drain terminals (pins 1, 2, 5, 6), one gate terminal (pin 3), and one source terminal (pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | Common high-side switching node; paralleled for lower inductance and higher current handling in compact layout. |
| 3 | Gate | Control input requiring negative VGS; compatible with 2.5 V–4.5 V logic swing without level shifting. |
| 4 | Source | Reference node for gate drive; connected to system VIN or battery positive in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 2.5 V gate drive capability | Enables direct interface with low-voltage microcontrollers (e.g., ARM Cortex-M0+ GPIO) without external level shifters. |
| Low RDS(on) at −2.5 V VGS | RDS(on) ≤ 84 mΩ ensures usable on-resistance even under weak gate drive, improving efficiency in battery-critical modes. |
| Integrated ESD protection diode | Gate-source diode rated per JEDEC JS-001; reduces need for external TVS in handheld product ESD robustness design. |
| SC-95 thin package | 0.65 mm profile allows stacking under batteries or displays; thermal resistance optimized for 2.0 W dissipation on 2500 mm² FR-4 board. |
| Body diode with low VF | VF(S-D) = 0.93 V at 6 A supports bidirectional current paths in USB-C power delivery or reverse-polarity protection circuits. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Preventing reverse current flow and over-discharge in single-cell Li-ion battery packs used in Bluetooth headsets and smartwatches. IC Role / Device Role / Timing Role: High-side load switch controlling battery connection to system load; activated/deactivated by MCU GPIO. Use Value: 58 mΩ RDS(on) limits voltage drop to <175 mV at 3 A, preserving battery runtime and enabling accurate fuel-gauge sensing. | Use Scenario: Enabling/disabling VBUS path in USB-C receptacles supporting 3 A charging, with automatic polarity detection. IC Role / Device Role / Timing Role: P-channel MOSFET configured in high-side position to isolate downstream ports during hot-plug or fault events. Use Value: 2.5 V gate drive compatibility allows direct control from USB PD controller's logic outputs, eliminating discrete level-shifting components. |
| Portable Display Backlight Control | Industrial Sensor Node Power Gating |
Use Scenario: PWM dimming control of white LED strings in OLED microdisplays embedded in AR glasses. IC Role / Device Role / Timing Role: Low-side or high-side current switch modulating LED current at 1–10 kHz with minimal dead-time distortion. Use Value: 65 ns fall time and 15 ns turn-on delay ensure clean PWM edges, reducing visible flicker and EMI in sensitive optical subsystems. | Use Scenario: Power gating of ultra-low-power environmental sensors (e.g., BME280) in battery-operated IoT nodes with multi-year lifetime targets. IC Role / Device Role / Timing Role: Standby power switch isolating sensor supply rails during sleep mode to reduce system quiescent current. Use Value: −1.0 µA IDSS leakage at −20 V VDS minimizes standby drain, extending battery life beyond 5 years in 10 µA average-current designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −2.5 V VGS; SOT-23 package; higher on-resistance and larger footprint. | Less suitable for 3 A continuous loads due to thermal derating; better fit for <1 A sensor power gating. | Select when cost sensitivity outweighs conduction loss and board area constraints. |
| AO3401A | RDS(on) = 52 mΩ @ −4.5 V but requires ≥3.0 V VGS for full enhancement; SO-23 package. | Not 2.5 V logic-compatible; requires gate driver or pull-up for reliable turn-on in low-VCC systems. | Choose only if system VCC ≥ 3.3 V and layout allows SO-23 thermal relief. |
Compared with Si2301DDS-T1-GE3 and AO3401A, the UPA1919TE-T1-AT uniquely delivers verified 2.5 V drive capability with sub-60 mΩ RDS(on) in a 2.9 mm × 1.9 mm footprint - making it optimal for space- and voltage-constrained portable power switches where gate drive simplicity and thermal efficiency are jointly critical.
Availability
UPA1919TE-T1-AT is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, portable display backlight control, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for UPA1919TE-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA1919TE-T1-AT belongs to Renesas' legacy μPA series of logic-level P-channel MOSFETs, engineered specifically for compact, low-voltage switching in portable consumer electronics where gate drive simplicity and thermal efficiency are prioritized.
FAQ
What is the maximum continuous drain current rating for UPA1919TE-T1-AT at 25°C ambient?
The UPA1919TE-T1-AT has a maximum continuous drain current (ID(DC)) rating of −6.0 A at TA = 25 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management - specifically mounting on an FR-4 board of 2500 mm² × 1.6 mm thickness. At elevated temperatures or reduced copper area, derating applies per the published PT vs. TA curve.
Does UPA1919TE-T1-AT support true 2.5 V logic-level gate drive?
Yes, the UPA1919TE-T1-AT is explicitly characterized for 2.5 V drive: RDS(on) ≤ 84 mΩ is guaranteed at VGS = −2.5 V and ID = −3.0 A. Its gate threshold voltage (VGS(off)) ranges from −0.5 V to −1.5 V, ensuring full enhancement and low on-resistance even with weak gate drive - a key differentiator versus standard −4.5 V–optimized P-MOSFETs.
What is the package type and pin configuration of UPA1919TE-T1-AT?
The UPA1919TE-T1-AT uses the SC-95 (Mini Mold Thin) package - a 6-pin surface-mount outline measuring 2.9 mm × 1.9 mm × 0.65 mm. Pins 1, 2, 5, and 6 are internally connected to the drain; pin 3 is the gate; and pin 4 is the source. This configuration supports high-current density and low-inductance layouts in portable PCBs.
Can UPA1919TE-T1-AT be used in reverse-polarity protection circuits?
Yes, the UPA1919TE-T1-AT is well-suited for reverse-polarity protection due to its P-channel topology, −20 V VDSS, and integrated body diode. When placed in the high-side position with source tied to input and drain to load, it blocks reverse current while conducting forward current with only 58 mΩ on-resistance at −4.5 V gate drive - minimizing voltage drop and power loss.
What is the total gate charge (QG) specification for UPA1919TE-T1-AT and how does it impact driver selection?
The UPA1919TE-T1-AT has a total gate charge (QG) of 6.0 nC at VDD = −16 V, as measured in the Electrical Characteristics table. This value determines the minimum gate driver current needed for fast switching: for 100 ns turn-on, ~60 mA peak drive is required. Compatible drivers include TC4420, MIC4423, or direct GPIO with series resistor if slew rate control is acceptable.
UPA1919TE-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-95-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 4 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-95-6, Mini Mold Thin
UPA1919TE-T1-AT FAQ
1.How can I place an order for UPA1919TE-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1919TE-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1919TE-T1-AT reliable?
The price and inventory of UPA1919TE-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1919TE-T1-AT is usually 5 days.
3.What payment methods are accepted for UPA1919TE-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1919TE-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1919TE-T1-AT?
UPA1919TE-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1919TE-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1919TE-T1-AT?
For technical support, including UPA1919TE-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1919TE-T1-AT requirements.
6.How does Aetrix verify that UPA1919TE-T1-AT is sourced from the original manufacturer or authorized distributors?
All UPA1919TE-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1919TE-T1-AT meets industry standards.
7.What is the process for return or replacement of UPA1919TE-T1-AT?
All UPA1919TE-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA1919TE-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1919TE-T1-AT part is unused and in its original packaging.
Return procedure for UPA1919TE-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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