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Renesas UPA1930TE-T1-AT
- Part No.:
- UPA1930TE-T1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-95-6
- Datasheet:
-
UPA1930TE-T1-AT.pdf
- Description:
- MOSFET P-CH 30V SC-95
- Quantity:
- Payment:
- Shipping:
Inventory:3,357
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Product details
Overview
UPA1930TE-T1-AT from Renesas Electronics is a P-channel MOSFET optimized for low-voltage power switching in portable electronics, featuring −30 V VDSS, 77 mΩ RDS(on) at VGS = −10 V / ID = −2.5 A, and −4.5 V gate drive capability. It operates in SC-95 (Mini Mold Thin) package with drain-connected pins 1/2/5/6, gate on pin 3, and source on pin 4.
For engineers reviewing the UPA1930TE-T1-AT datasheet, UPA1930TE-T1-AT pinout, UPA1930TE-T1-AT application, or UPA1930TE-T1-AT equivalent, key selection criteria include its −4.5 V logic-level compatibility, pulsed drain current rating of −18 A, thermal derating on FR-4 boards, ESD sensitivity (±150 V), and suitability for battery-powered load switching where compact size and low gate charge (7.5 nC) matter.
Technical Context
This device implements a single P-channel enhancement-mode silicon MOSFET structure with integrated body diode and gate protection diode. Its channel temperature limit is 150°C, and it exhibits typical forward transfer admittance |yfs| = 1 S at VDS = −10 V / ID = −2.5 A.
Switching performance is characterized by 8.5 ns turn-on delay, 3.5 ns rise time, 33 ns turn-off delay, and 19.5 ns fall time under VDD = −15 V, ID = −2.5 A, and RG = 6 Ω test conditions. Input capacitance Ciss is 325 pF at VDS = −10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Maximum blocking voltage before avalanche conduction; defines upper limit for battery supply rails in portable systems. |
| RDS(on)1 | 77 mΩ MAX at VGS = −10 V / ID = −2.5 A - Low conduction loss enabling efficient 3.3 V or 5 V load switching. |
| RDS(on)2 | 100 mΩ MAX at VGS = −4.5 V / ID = −2.5 A - Confirmed logic-level operation compatible with standard microcontroller GPIO outputs. |
| ID(DC) | −4.5 A - Continuous DC current rating on FR-4 board (2500 mm² × 1.6 mm); sets maximum steady-state load capacity. |
| QG | 7.5 nC - Total gate charge determining driver strength requirement and switching speed trade-offs. |
| VGS(off) | −1.0 to −2.5 V - Gate threshold range defining minimum negative gate voltage needed to ensure full turn-on. |
| VF(S-D) | 0.93 V at IF = 4.5 A - Forward voltage of intrinsic body diode; impacts reverse-current path losses in H-bridge or buck converter freewheeling. |
Pinout & Package
UPA1930TE-T1-AT uses the SC-95 (Mini Mold Thin) surface-mount package, measuring 2.9 ± 0.2 mm × 1.9 mm × 0.95 mm, with exposed drain pads on pins 1, 2, 5, and 6 for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | Common high-side switching node; electrically and thermally connected to internal die backside; requires PCB copper pour for heat dissipation. |
| 3 | Gate | Control input for MOSFET channel; sensitive to ESD (VESD ±150 V); must be driven with clean, low-impedance −4.5 V to −10 V signal. |
| 4 | Source | Reference terminal for gate drive; tied to system ground or floating rail; body diode anode connects here. |
Key Features
| Feature | Design Value |
|---|---|
| −4.5 V gate drive support | Enables direct interface with 3.3 V or 5 V logic without level-shifting circuitry, reducing BOM count and layout complexity. |
| Low RDS(on) at low VGS | 100 mΩ max at −4.5 V ensures <100 mW conduction loss at 1 A, critical for extended battery life in handheld devices. |
| Integrated gate protection diode | Provides basic ESD immunity (±150 V HBM), though external clamping remains mandatory for robust system-level protection. |
| SC-95 thin-profile package | 0.95 mm height enables use in space-constrained portable designs such as smartphones, wearables, and Bluetooth headsets. |
| Pb-free construction | Complies with RoHS Directive; "-A" suffix confirms lead-free external electrodes and mold compound per Renesas specification. |
Applications
| Portable Power Management | USB OTG Power Switching |
|---|---|
Use Scenario: Controlling power delivery to peripheral modules (e.g., camera, SD card) in smartphones and tablets based on system activity. IC Role / Device Role / Timing Role: High-side load switch managing 3.3 V or 5 V rail activation/deactivation with fast turn-on (<12 ns) and minimal quiescent current. Use Value: Reduces standby power by cutting off unused subsystems; RDS(on) ≤ 100 mΩ limits voltage drop to <100 mV at 1 A, preserving regulation margin. | Use Scenario: Enabling/disabling VBUS power path during USB On-The-Go role negotiation between host and peripheral devices. IC Role / Device Role / Timing Role: Bidirectional power switch isolating VBUS lines while supporting fast role swap timing requirements (≤ 100 ms). Use Value: Gate drive compatibility with 3.3 V USB PHY logic eliminates need for discrete level shifters; low QG supports rapid switching transitions. |
| Li-ion Battery Protection | LED Backlight Dimming |
Use Scenario: Implementing secondary overcurrent cutoff in battery packs where primary protection IC triggers shutdown. IC Role / Device Role / Timing Role: Secondary discharge FET placed between cell stack and load terminal; activated only upon fault detection. Use Value: −30 V VDSS accommodates up to 8-cell Li-ion stacks (29.6 V); pulsed ID(pulse) = −18 A handles short-circuit transients without latch-up. | Use Scenario: PWM-controlled current sink for white LED backlight arrays in LCD displays of portable media players. IC Role / Device Role / Timing Role: Low-side or high-side current regulator modulated at 1–20 kHz to control brightness without visible flicker. Use Value: Fast switching (tf = 19.5 ns) minimizes dead-time distortion; low RDS(on) reduces thermal stress during sustained 200–500 mA operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | VDSS = −20 V, RDS(on) = 115 mΩ @ −4.5 V, SC-70 package | Limited to ≤20 V systems; smaller footprint but lower power handling (PT = 0.54 W) | Choose for ultra-compact 20 V designs where UPA1930TE-T1-AT's −30 V rating is unnecessary. |
| AO3401 | VDSS = −30 V, RDS(on) = 85 mΩ @ −4.5 V, SOT-23 package, higher Ciss (420 pF) | Same voltage rating but slower switching due to higher input capacitance; less suitable for >1 MHz PWM. | Prefer when cost is prioritized over switching speed and gate drive efficiency in non-high-frequency load switches. |
Compared with Si2301DDS-T1-GE3 and AO3401, the UPA1930TE-T1-AT delivers superior gate charge efficiency (7.5 nC vs. ≥10 nC), tighter RDS(on) tolerance at −4.5 V, and SC-95 thermal performance-making it optimal for 3.3 V–5 V portable systems demanding both compactness and low-loss switching.
Availability
UPA1930TE-T1-AT is available at Aetrix Electronics and suitable for portable power management, USB OTG switching, Li-ion battery protection, and LED backlight dimming requiring stable component supply across production lifecycles.
Supply support for UPA1930TE-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The μPA1930 series was developed specifically for low-voltage, high-efficiency power switching in battery-operated portable equipment, emphasizing logic-level drivability and thermal performance in ultra-thin packages.
FAQ
What is the maximum continuous drain current rating for UPA1930TE-T1-AT under standard PCB conditions?
The UPA1930TE-T1-AT has a maximum continuous drain current (ID(DC)) of −4.5 A when mounted on an FR-4 board measuring 2500 mm² × 1.6 mm thickness. This rating assumes ambient temperature ≤25°C and accounts for thermal resistance limitations; derating is required above 25°C per the published derating curve in the datasheet. The UPA1930TE-T1-AT must not exceed this current in DC operation to avoid thermal runaway or permanent damage.
Does UPA1930TE-T1-AT support true logic-level gate drive at 3.3 V systems?
Yes, the UPA1930TE-T1-AT is explicitly characterized for −4.5 V gate drive, with RDS(on)2 = 100 mΩ MAX at VGS = −4.5 V and ID = −2.5 A. While 3.3 V systems typically generate −3.3 V gate-source differential in high-side configurations, actual performance depends on driver topology. For guaranteed conduction, a −4.5 V or lower gate drive is recommended; the UPA1930TE-T1-AT will still conduct at −3.3 V but with elevated RDS(on).
What is the thermal resistance profile of UPA1930TE-T1-AT, and how does it affect PCB layout?
The UPA1930TE-T1-AT relies on its drain-connected pins (1/2/5/6) for heat dissipation. With no heatsink, its transient thermal resistance rth(ch–A) drops from ~100°C/W at 100 μs to ~25°C/W at 10 ms pulse width on FR-4. For continuous operation, PCB layout must include ≥2500 mm² of 1 oz copper connected to all drain pins. The UPA1930TE-T1-AT's SC-95 package lacks an exposed thermal pad, so thermal vias under drain lands are strongly advised to improve steady-state junction-to-ambient conduction.
Can UPA1930TE-T1-AT be used in automotive applications?
No-the UPA1930TE-T1-AT is rated for Standard quality grade per Renesas documentation, intended for computers, office equipment, audio/video gear, and portable electronics-not transportation or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature range support (−40°C to +125°C), or enhanced ESD robustness required for automotive environments. Using the UPA1930TE-T1-AT in automotive applications violates Renesas' defined usage scope and voids liability coverage.
Is the body diode in UPA1930TE-T1-AT suitable for synchronous rectification?
No-the intrinsic body diode of the UPA1930TE-T1-AT has a forward voltage VF(S-D) = 0.93 V at 4.5 A and exhibits relatively slow reverse recovery (not specified in datasheet). It is not optimized for synchronous rectification, where low VF and fast trr are essential. The UPA1930TE-T1-AT is designed for unidirectional high-side switching; for synchronous buck topologies, a dedicated low-VF, fast-recovery Schottky or MOSFET-based solution is required instead of relying on the UPA1930TE-T1-AT's body diode.
UPA1930TE-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-95-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 325 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-95-6, Mini Mold Thin
UPA1930TE-T1-AT FAQ
1.How can I place an order for UPA1930TE-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA1930TE-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA1930TE-T1-AT reliable?
The price and inventory of UPA1930TE-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA1930TE-T1-AT is usually 5 days.
3.What payment methods are accepted for UPA1930TE-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA1930TE-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA1930TE-T1-AT?
UPA1930TE-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA1930TE-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA1930TE-T1-AT?
For technical support, including UPA1930TE-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA1930TE-T1-AT requirements.
6.How does Aetrix verify that UPA1930TE-T1-AT is sourced from the original manufacturer or authorized distributors?
All UPA1930TE-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA1930TE-T1-AT meets industry standards.
7.What is the process for return or replacement of UPA1930TE-T1-AT?
All UPA1930TE-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA1930TE-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA1930TE-T1-AT part is unused and in its original packaging.
Return procedure for UPA1930TE-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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