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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2450TL-E1-A

Name: UPA2450TL-E1-A
Brand: Renesas
SKU: UPA2450TL-E1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2450TL-E1-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2450TL-E1-A.pdf

Description:: SMALL SIGNAL N-CHANNEL MOSFET

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Product details

Overview

UPA2450TL-E1-A from Renesas Electronics is a dual N-channel MOSFET for low-voltage switching applications, featuring 2.5 V gate drive capability, R_DS(on) as low as 17.5 mΩ at V_GS = 4.5 V / I_D = 4.0 A, ±8.6 A DC drain current, and integrated gate-source ESD protection diodes. It is used in power switches for portable electronics such as battery-powered motor drivers and load management circuits.

For engineers reviewing the UPA2450TL-E1-A datasheet, UPA2450TL-E1-A pinout, UPA2450TL-E1-A application, or UPA2450TL-E1-A equivalent, key selection criteria include low-threshold 2.5 V drive compatibility, dual-channel thermal sharing in a 6-pin HWSON package, and verified R_DS(on) performance across V_GS = 2.5–4.5 V for battery-powered system design.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs in a single 6-pin HWSON (4.5 × 2.1 mm) package with shared thermal path. Each channel exhibits gate threshold voltage (V_GS(off)) between 0.5 V and 1.5 V, enabling reliable turn-on from 2.5 V logic rails.

Switching performance is characterized by t_d(on) = 40 ns, t_r = 160 ns, t_d(off) = 190 ns, and t_f = 200 ns under V_DD = 10 V, I_D = 4.0 A, and R_G = 6 Ω conditions; total gate charge Q_G is 9.0 nC at V_DD = 16 V, supporting efficient PWM control in portable DC-DC and load-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - supports input rails up to 18 V nominal with margin for transients in portable systems
R_DS(on) max	27.5 mΩ at V_GS = 2.5 V / I_D = 4.0 A - enables direct interface with 2.5 V microcontrollers without level-shifting
I_D(DC)	±8.6 A - allows dual-channel parallel operation for higher-current loads (e.g., dual-motor drivers)
Q_G	9.0 nC - determines gate driver strength requirement for <200 ns switching transitions at 1 MHz PWM
C_iss	540 pF - impacts high-frequency gate drive losses and EMI filtering requirements
T_ch max	150 °C - defines maximum junction temperature for thermal derating on FR4 or ceramic PCBs

Pinout & Package

The UPA2450TL-E1-A uses a 6-pin HWSON (4.5 × 2.1 mm, 0.5 mm pitch) surface-mount package with exposed thermal pad. Pin 1 and Pin 2 are Source 1 and Gate 1; Pin 4 and Pin 5 are Gate 2 and Source 2; Pin 3 and Pin 6 are shared Drain terminals (Drain 1 and Drain 2).

Pin/Terminal	Circuit Role	Design Meaning
1	Source 1	Return path for Channel 1; electrically isolated from Source 2 but thermally coupled via substrate
2	Gate 1	Control terminal for Channel 1; protected by internal G-S diode against ±12 V ESD events
3	Drain 1	High-side switch output for Channel 1; shares thermal mass with Drain 2 (Pin 6)
4	Gate 2	Independent control terminal for Channel 2; identical drive characteristics to Gate 1
5	Source 2	Return path for Channel 2; not internally connected to Source 1 - requires separate PCB routing
6	Drain 2	High-side switch output for Channel 2; co-packaged with Drain 1 for compact dual-load switching

Key Features

Feature	Design Value
2.5 V gate drive compatibility	Enables direct control from low-voltage MCUs and baseband processors without external level shifters
Dual independent N-channel channels	Supports synchronous rectification, H-bridge half-bridge, or redundant load switching in one footprint
Built-in gate-source ESD protection diodes	Provides Class 2 HBM ESD robustness (per datasheet note), reducing need for external TVS on gate traces
Low R_DS(on) at 2.5–4.5 V V_GS	Minimizes conduction loss in battery-operated devices where supply voltage drops below 3.3 V

Applications

Portable Motor Control	USB-C Power Delivery Load Switch
Use Scenario: Driving small DC motors in handheld medical instruments or robotic end-effectors powered by single-cell Li-ion batteries (2.8–4.2 V). IC Role / Device Role / Timing Role: Dual-channel N-MOSFET used as half-bridge driver with external bootstrap or as independent load switches for bidirectional motor control. Use Value: 2.5 V gate threshold ensures full enhancement even at battery EOD (end-of-discharge), maintaining torque and efficiency down to 2.8 V.	Use Scenario: Enabling/disabling 5 V/20 V power paths in USB-C PD sink devices with strict inrush and fault isolation requirements. IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switches for reverse-current blocking and hot-swap sequencing. Use Value: Matched R_DS(on) and thermal coupling enable balanced current sharing and coordinated fault shutdown during overcurrent events.
Smartphone Camera Actuator Driver	Wearable Health Sensor Power Gating
Use Scenario: Driving voice-coil motors (VCM) or shape-memory alloy (SMA) actuators in ultra-thin smartphone camera modules. IC Role / Device Role / Timing Role: Precision low-noise load switch controlling actuator bias current with minimal gate charge-induced jitter. Use Value: Low Q_G (9.0 nC) and fast t_r/t_f support sub-millisecond actuation timing critical for OIS/EIS stabilization loops.	Use Scenario: Power gating discrete analog front-ends (e.g., ECG/PPG signal chains) in battery-constrained wearables to extend runtime between charges. IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 10 µA) dual switch isolating sensor subsystems during sleep mode. Use Value: Ultra-low standby current and 2.5 V compatibility allow direct control from wearable SoC GPIOs, eliminating auxiliary LDOs.

Portable Motor Control

USB-C Power Delivery Load Switch

Use Scenario: Driving small DC motors in handheld medical instruments or robotic end-effectors powered by single-cell Li-ion batteries (2.8–4.2 V).

IC Role / Device Role / Timing Role: Dual-channel N-MOSFET used as half-bridge driver with external bootstrap or as independent load switches for bidirectional motor control.

Use Value: 2.5 V gate threshold ensures full enhancement even at battery EOD (end-of-discharge), maintaining torque and efficiency down to 2.8 V.

Use Scenario: Enabling/disabling 5 V/20 V power paths in USB-C PD sink devices with strict inrush and fault isolation requirements.

IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switches for reverse-current blocking and hot-swap sequencing.

Use Value: Matched R_DS(on) and thermal coupling enable balanced current sharing and coordinated fault shutdown during overcurrent events.

Smartphone Camera Actuator Driver

Wearable Health Sensor Power Gating

Use Scenario: Driving voice-coil motors (VCM) or shape-memory alloy (SMA) actuators in ultra-thin smartphone camera modules.

IC Role / Device Role / Timing Role: Precision low-noise load switch controlling actuator bias current with minimal gate charge-induced jitter.

Use Value: Low Q_G (9.0 nC) and fast t_r/t_f support sub-millisecond actuation timing critical for OIS/EIS stabilization loops.

Use Scenario: Power gating discrete analog front-ends (e.g., ECG/PPG signal chains) in battery-constrained wearables to extend runtime between charges.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 10 µA) dual switch isolating sensor subsystems during sleep mode.

Use Value: Ultra-low standby current and 2.5 V compatibility allow direct control from wearable SoC GPIOs, eliminating auxiliary LDOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA915DJ-T1-GE3	Single-channel 20 V N-MOSFET in 6-pin TSOP-6; R_DS(on) = 22 mΩ @ V_GS = 4.5 V; no built-in G-S diode	Requires two devices for dual-channel function; lacks integrated ESD protection	Choose when board space permits discrete layout and external ESD protection is already implemented
DMN2053LSD-13	Dual N-MOSFET in 8-pin SO-8; R_DS(on) = 28 mΩ @ V_GS = 2.5 V; higher thermal resistance (R_θJA ≈ 60 °C/W)	Larger footprint and lower power density than UPA2450TL-E1-A's HWSON package	Prefer for legacy SO-8 designs requiring drop-in replacement with proven reliability in industrial ambient

Compared with SiA915DJ-T1-GE3 and DMN2053LSD-13, the UPA2450TL-E1-A delivers superior power density (4.5 × 2.1 mm), guaranteed 2.5 V drive, and integrated ESD protection - making it optimal for space-constrained, battery-powered consumer electronics where gate drive simplicity and layout efficiency are critical.

Availability

UPA2450TL-E1-A is available at Aetrix Electronics and suitable for portable motor control, USB-C power delivery load switching, smartphone camera actuator driving, and wearable health sensor power gating requiring stable component supply and long-term production continuity.

Supply support for UPA2450TL-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.

The UPA2450TL-E1-A belongs to Renesas' legacy µPA series of low-voltage logic-level MOSFETs, designed specifically for compact, battery-efficient switching in portable electronics where 2.5 V–3.3 V logic compatibility and thermal co-location of dual channels are essential.

FAQ

What is the maximum continuous drain current rating for the UPA2450TL-E1-A?

The UPA2450TL-E1-A supports ±8.6 A DC drain current per channel at T_A = 25°C on a ceramic board. Derating applies per the Safe Operating Area (SOA) curve: at 75°C ambient, max DC current drops to ~5.5 A per channel. The dual-channel configuration shares thermal mass, so simultaneous full-load operation requires careful PCB copper area and airflow planning.

Does the UPA2450TL-E1-A have built-in ESD protection, and what is its rating?

Yes, the UPA2450TL-E1-A integrates gate-source protection diodes per the datasheet remark. While exact HBM/CDM ratings aren't specified in the provided document, the structure provides basic ESD robustness typical of Renesas' µPA series. For mission-critical applications, external TVS protection is still recommended if gate traces are exposed to handling or connector interfaces.

Can the UPA2450TL-E1-A be driven directly by a 2.5 V microcontroller GPIO?

Yes - the UPA2450TL-E1-A is explicitly characterized for 2.5 V gate drive, with R_DS(on) = 27.5 mΩ max at V_GS = 2.5 V / I_D = 4.0 A. Its V_GS(off) range (0.5–1.5 V) ensures strong enhancement well below 2.5 V, making it compatible with 2.5 V logic families without level-shifting circuitry.

What is the thermal resistance (R_θJA) of the UPA2450TL-E1-A on standard FR4 PCB?

Per the datasheet notes, total power dissipation is 0.7 W on FR4 (25°C ambient). Using P = (T_j − T_A) / R_θJA, and assuming T_j(max) = 150°C, R_θJA ≈ 171°C/W. This value aligns with typical HWSON packages and confirms the need for thermal vias and copper pour under the exposed pad for sustained >1 W operation.

Are the two MOSFET channels in the UPA2450TL-E1-A electrically isolated or internally connected?

The two N-channel MOSFETs in the UPA2450TL-E1-A are fully independent: Sources (Pins 1 and 5), Gates (Pins 2 and 4), and Drains (Pins 3 and 6) are separate terminals with no internal connection. However, they share a common silicon die and thermal substrate - meaning channel temperatures track closely, but electrical isolation between channels is maintained for differential or floating load configurations.

UPA2450TL-E1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2450TL-E1-A FAQ

1.How can I place an order for UPA2450TL-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2450TL-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2450TL-E1-A reliable?

The price and inventory of UPA2450TL-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2450TL-E1-A is usually 5 days.

3.What payment methods are accepted for UPA2450TL-E1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2450TL-E1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2450TL-E1-A?

UPA2450TL-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2450TL-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2450TL-E1-A?

For technical support, including UPA2450TL-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2450TL-E1-A requirements.

6.How does Aetrix verify that UPA2450TL-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA2450TL-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2450TL-E1-A meets industry standards.

7.What is the process for return or replacement of UPA2450TL-E1-A?

All UPA2450TL-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2450TL-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2450TL-E1-A part is unused and in its original packaging.

Return procedure for UPA2450TL-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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