Renesas UPA2451TL-E1-A

Overview

UPA2451TL-E1-A from Renesas Electronics is a dual N-channel MOSFET in a 6-pin HWSON (4.5 × 2.1 mm) package, designed for low-voltage switching applications. It supports direct 2.5 V gate drive, delivers ≤20 mΩ R_DS(on) at V_GS = 4.5 V / I_D = 4.0 A, and integrates gate-source ESD protection diodes. It is used in portable device power switches, load switching, and battery protection circuits.

For engineers reviewing the UPA2451TL-E1-A datasheet, UPA2451TL-E1-A pinout, UPA2451TL-E1-A application, or UPA2451TL-E1-A equivalent, key selection criteria include 2.5 V logic-level drivability, dual-channel thermal coupling on FR4, R_DS(on) performance across 2.5–4.5 V gate voltages, and built-in G-S ESD protection-critical for space-constrained DC-DC and power management designs.

Technical Context

The UPA2451TL-E1-A integrates two independent N-channel enhancement-mode MOSFETs sharing a common drain terminal in a thermally optimized HWSON package. Its gate threshold voltage (V_GS(off)) ranges from 0.5 V to 1.5 V, enabling reliable turn-on with low-voltage controllers. The device exhibits strong transconductance (|y_fs| = 5.0 S typical) and low gate charge (Q_G = 9.0 nC), supporting fast switching with minimal driver loss.

It features separate source terminals (S1, S2) and gate terminals (G1, G2), allowing independent control of each channel. The body diodes are rated for 8.2 A forward current with V_F(S-D) = 0.84 V and t_rr = 160 ns, making it suitable for synchronous rectification and bidirectional load control where reverse recovery behavior matters.

Key Specifications

Pinout & Package

UPA2451TL-E1-A uses a 6-pin HWSON (4.5 × 2.1 mm, 0.5 mm pitch) surface-mount package with exposed thermal pad. Pin 1–6 correspond to Source1, Gate1, Drain, Drain, Gate2, Source2 - with pins 3 and 4 internally shorted to form a shared drain node.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.

Compared with SiA913EDJ-T1-GE3 and DMN3028LSD-13, the UPA2451TL-E1-A uniquely combines 2.5 V drive capability, dual-channel integration with shared drain, and on-die ESD protection in a 4.5 × 2.1 mm HWSON package-making it optimal for space- and voltage-constrained portable power switches where gate drive headroom is limited.

Availability

UPA2451TL-E1-A is available at Aetrix Electronics and suitable for portable power switching, battery protection, synchronous buck conversion, and industrial load switching requiring stable component supply and long-term manufacturability.

Supply support for UPA2451TL-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT markets.

The µPA2451 product line targets low-voltage, high-efficiency power switching in portable electronics-designed to replace discrete MOSFETs with integrated dual-channel, logic-level, thermally optimized packages.

FAQ

What is the maximum continuous drain current rating for UPA2451TL-E1-A on a standard FR4 PCB?

The UPA2451TL-E1-A supports ±8.2 A continuous drain current per channel at T_A = 25°C when mounted on an FR4 board, limited by its 0.7 W total power dissipation rating (PT2). This assumes adequate copper pour and thermal vias under the exposed pad. Derating is required above 25°C ambient-e.g., ~6.5 A at 60°C ambient per channel.

Does UPA2451TL-E1-A require external gate resistors for stable switching in a 500 kHz buck converter?

The UPA2451TL-E1-A has low gate charge (Q_G = 9.0 nC) and fast switching times (t_d(off) = 360 ns), but external gate resistors (typically 1–10 Ω) are recommended to dampen ringing, control dV/dt, and prevent shoot-through in synchronous topologies. The device's low C_iss (540 pF) makes it responsive to small gate drive variations, so resistor tuning is essential for EMI compliance.

Can UPA2451TL-E1-A be used in a back-to-back configuration for AC load switching?

No-UPA2451TL-E1-A is a dual N-channel MOSFET with a common drain and no intrinsic body diode orientation for bidirectional blocking. It is not suitable for AC switching. For AC solid-state relay functions, a complementary P+N or N+N configuration with external diodes or dedicated AC switches is required. The UPA2451TL-E1-A is intended for DC load switching only.

Is the ESD protection diode in UPA2451TL-E1-A sufficient for IEC 61000-4-2 Level 4 compliance?

The built-in gate-source ESD diode provides basic HBM (Human Body Model) protection up to ±12 V, meeting JEDEC JS-001 Class 2 (2 kV). However, it does not satisfy IEC 61000-4-2 Level 4 (±8 kV contact / ±15 kV air) requirements. External TVS diodes or series current-limiting resistors must be added for full system-level ESD immunity in end equipment.

What is the thermal resistance from junction-to-ambient (R_θJA) for UPA2451TL-E1-A on a 2-layer FR4 board?

Renesas specifies a transient thermal resistance r_th(ch-A) of 178.6°C/W for single-pulse conditions on a 50 mm × 1.0 mm FR4 board with the exposed pad soldered. Steady-state R_θJA is not published, but typical 2-layer FR4 implementations with 1 in² copper pour achieve ~120–150°C/W. For accurate thermal design, use the provided transient curves and apply appropriate duty-cycle derating.