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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2591T1H-T1-AT

Name: UPA2591T1H-T1-AT
Brand: Renesas
SKU: UPA2591T1H-T1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2591T1H-T1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2591T1H-T1-AT.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

UPA2591T1H-T1-AT from Renesas Electronics is a dual N- and P-channel MOSFET in a single 8-pin VSOF (2429) surface-mount package, designed for synchronous rectification and power switching in portable DC/DC converters. It delivers R_DS(on) of 55 mΩ (N-ch, V_GS = 4.5 V, I_D = 2 A) and 88 mΩ (P-ch, V_GS = −4.5 V, I_D = −2 A), operates down to 2.5 V gate drive, and integrates gate protection diodes for ESD robustness.

For engineers reviewing the UPA2591T1H-T1-AT datasheet, UPA2591T1H-T1-AT pinout, UPA2591T1H-T1-AT application, or UPA2591T1H-T1-AT equivalent, this device supports compact, high-efficiency power management in space-constrained battery-powered systems where low-voltage gate drive and complementary channel pairing are critical.

Technical Context

The UPA2591T1H-T1-AT integrates two discrete enhancement-mode MOSFETs - one N-channel (V_DSS = 30 V, I_D(DC) = ±4.0 A) and one P-channel (V_DSS = −30 V, I_D(DC) = −3.0 A) - sharing thermal coupling on a common leadframe within an 8-pin VSOF package. Its gate threshold voltages are V_GS(off) = 0.5–1.5 V (N-ch) and −0.5 to −1.5 V (P-ch), enabling reliable turn-on with logic-level control.

Switching performance is characterized by t_d(on) = 7 ns / 12 ns (N/P-ch), t_f = 5 ns / 27 ns, and Q_G = 5.4 nC / 5.2 nC, supporting high-frequency operation up to several MHz in buck and boost topologies. The built-in gate-source protection diode mitigates ESD risk but does not replace external transient suppression in harsh environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V (N-ch) / −30 V (P-ch): Supports input rails up to 24 V nominal in DC/DC stages without derating.
R_DS(on) (N-ch)	55 mΩ max @ V_GS = 4.5 V, I_D = 2 A: Enables <110 mW conduction loss per FET at 2 A, critical for thermal budget in portable designs.
R_DS(on) (P-ch)	88 mΩ max @ V_GS = −4.5 V, I_D = −2 A: Allows efficient high-side switching in buck regulators without bootstrap complexity.
Q_G	5.4 nC (N-ch) / 5.2 nC (P-ch): Low gate charge enables fast switching with minimal driver power, reducing dead-time losses.
C_iss	475 pF (N-ch) / 450 pF (P-ch): Predictable input capacitance simplifies gate driver sizing and layout for stable edge rates.
T_ch max	150 °C: Specifies absolute junction temperature limit; requires thermal design to maintain safe operating area under pulsed loads.
P_T1	1.5 W (1 unit, 5 s on FR-4): Defines maximum dissipation for single-FET operation; dual-FET derating to 1.24 W constrains simultaneous full-load use.

Pinout & Package

Package: 8-pin VSOF (2429), 2.4 mm × 2.8 mm × 0.8 mm body, pure Sn lead finish, Pb-free compliant. Surface-mount footprint optimized for thermal relief and high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1	N-channel Source	Common source node for N-FET; electrically tied to exposed drain pads (7,8) via internal substrate connection.
2	N-channel Gate	Control terminal for N-FET; requires 2.5–4.5 V drive relative to Pin 1 for full enhancement.
3	P-channel Source	Common source node for P-FET; isolated from N-FET source; referenced to its own gate (Pin 4).
4	P-channel Gate	Control terminal for P-FET; driven negative relative to Pin 3 (e.g., 0 V gate → −4.5 V source for turn-on).
5, 6	P-channel Drain	High-side output node; connects to input rail in buck topology; shares thermal path with Pins 7–8.
7, 8	N-channel Drain	Low-side output node; ties to ground or inductor node; thermally coupled to Pins 5–6 for balanced heat spreading.

Key Features

Feature	Design Value
2.5 V gate drive capability	Enables direct interface with 2.5 V/3.3 V microcontrollers and PMICs without level-shifting, reducing BOM count.
Complementary N+P pair in one package	Eliminates layout mismatch between channels, improves timing symmetry, and cuts PCB area by ~40% vs. discrete solutions.
Built-in gate protection diode	Provides basic ESD immunity (HBM > 2 kV), reducing need for external TVS on gate lines in consumer-grade applications.
Low C_oss (62/77 pF)	Minimizes switching loss during hard-commutation events and improves light-load efficiency in resonant topologies.
Body diode V_F(S-D)	0.85 V (N-ch, I_F = 4 A) / 0.89 V (P-ch, I_F = −3 A): Enables synchronous rectification with low forward drop during dead time.

Applications

Smartphone Power Management	USB-C PD Portable Charger
Use Scenario: Dual-phase buck converter supplying core voltage to application processor in smartphones. IC Role / Device Role / Timing Role: N-channel handles low-side synchronous rectification; P-channel serves as high-side switch, eliminating bootstrap capacitor. Use Value: 55 mΩ/88 mΩ R_DS(on) reduces conduction loss by >25% vs. older 100 mΩ dual-FETs, extending battery runtime at 1–2 A load.	Use Scenario: Step-down stage in compact 20 W USB-C PD power bank with 3.7 V Li-ion input and 5/9 V output. IC Role / Device Role / Timing Role: Integrated N+P pair implements single-stage buck conversion with minimal external components. Use Value: 2.5 V gate drive allows direct control from low-power MCU GPIOs, enabling ultra-low quiescent current sleep modes.
Wireless Headphone Charging Case	IoT Sensor Node Power Supply
Use Scenario: 3.3 V regulated rail generation from 4.2 V battery in Bluetooth earbud charging case. IC Role / Device Role / Timing Role: P-channel high-side switch + N-channel low-side switch operate in synchronous buck mode at 1.5 MHz. Use Value: Small 2.4 mm × 2.8 mm VSOF package fits tight mechanical constraints while maintaining 1.24 W dual-FET thermal margin.	Use Scenario: Powering ultra-low-power MCU and BLE radio from coin-cell or energy-harvesting source. IC Role / Device Role / Timing Role: N-channel used as load switch; P-channel configured as reverse-polarity protection element. Use Value: Complementary channels allow single-package implementation of both functions, saving >2 mm² PCB area vs. discrete MOSFETs.

Smartphone Power Management

USB-C PD Portable Charger

Use Scenario: Dual-phase buck converter supplying core voltage to application processor in smartphones.

IC Role / Device Role / Timing Role: N-channel handles low-side synchronous rectification; P-channel serves as high-side switch, eliminating bootstrap capacitor.

Use Value: 55 mΩ/88 mΩ R_DS(on) reduces conduction loss by >25% vs. older 100 mΩ dual-FETs, extending battery runtime at 1–2 A load.

Use Scenario: Step-down stage in compact 20 W USB-C PD power bank with 3.7 V Li-ion input and 5/9 V output.

IC Role / Device Role / Timing Role: Integrated N+P pair implements single-stage buck conversion with minimal external components.

Use Value: 2.5 V gate drive allows direct control from low-power MCU GPIOs, enabling ultra-low quiescent current sleep modes.

Wireless Headphone Charging Case

IoT Sensor Node Power Supply

Use Scenario: 3.3 V regulated rail generation from 4.2 V battery in Bluetooth earbud charging case.

IC Role / Device Role / Timing Role: P-channel high-side switch + N-channel low-side switch operate in synchronous buck mode at 1.5 MHz.

Use Value: Small 2.4 mm × 2.8 mm VSOF package fits tight mechanical constraints while maintaining 1.24 W dual-FET thermal margin.

Use Scenario: Powering ultra-low-power MCU and BLE radio from coin-cell or energy-harvesting source.

IC Role / Device Role / Timing Role: N-channel used as load switch; P-channel configured as reverse-polarity protection element.

Use Value: Complementary channels allow single-package implementation of both functions, saving >2 mm² PCB area vs. discrete MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N+P MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3 (Vishay)	Higher R_DS(on): 72 mΩ (N), 110 mΩ (P) @ 4.5 V; larger 3.3 mm × 3.3 mm SO-8 package.	Less suitable for sub-3 mm PCB footprints; higher conduction loss limits use in >1.5 A portable apps.	Preferred when board space permits and legacy SO-8 compatibility is required.
DMC2038LVT-7 (Diodes Inc.)	Lower voltage rating: ±20 V V_DSS; smaller 2 mm × 2 mm X2-DFN package; no integrated gate protection diode.	Restricted to 12 V input systems; requires external ESD protection in handheld environments.	Chosen for cost-sensitive, lower-voltage IoT nodes where size is paramount and ESD risk is controlled.

Compared with Si7157DP-T1-GE3 and DMC2038LVT-7, the UPA2591T1H-T1-AT offers superior 30 V rating and gate protection in the smallest footprint among the three, making it optimal for next-gen portable DC/DC where voltage headroom and reliability coexist with miniaturization.

Availability

UPA2591T1H-T1-AT is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD portable chargers, wireless headphone charging cases, and IoT sensor node power supplies requiring stable component supply across production lifecycles.

Supply support for UPA2591T1H-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, and consumer applications.

The UPA2591T1H-T1-AT belongs to Renesas' μPA family of integrated power MOSFETs, engineered specifically for high-efficiency, space-constrained DC/DC conversion in portable electronics.

FAQ

What is the maximum continuous drain current rating for each channel in the UPA2591T1H-T1-AT?

The UPA2591T1H-T1-AT specifies ±4.0 A for the N-channel and −3.0 A for the P-channel under DC conditions at T_A = 25°C on a standard FR-4 board. These ratings assume proper PCB copper area and thermal vias; actual current must be derated above 25°C ambient per the published thermal resistance curves in the datasheet.

Does the UPA2591T1H-T1-AT require external gate resistors for stable switching?

The UPA2591T1H-T1-AT does not mandate external gate resistors but benefits from them in high-noise environments. The datasheet's switching time test uses R_G = 6 Ω; using 5–10 Ω improves EMI control and prevents ringing without significantly degrading t_d(on)/t_d(off). No resistor is needed for basic 1–2 MHz operation with clean gate drivers.

Can the UPA2591T1H-T1-AT be used in a synchronous buck converter without a bootstrap circuit?

Yes - the P-channel MOSFET in the UPA2591T1H-T1-AT eliminates the need for a bootstrap capacitor in high-side switching. When configured with the P-FET as the upper switch and N-FET as the lower switch, gate drive remains referenced to local source potentials, enabling simple 0–4.5 V control signals without floating bias generation.

Is the UPA2591T1H-T1-AT RoHS-compliant and halogen-free?

Yes, the UPA2591T1H-T1-AT is Pb-free (pure Sn lead plating) and complies with EU RoHS Directive 2011/65/EU. Renesas confirms halogen-free status per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each, as documented in the official material declaration for this part number.

What is the thermal resistance from junction to ambient (R_θJA) for the UPA2591T1H-T1-AT?

The UPA2591T1H-T1-AT does not specify a single R_θJA value because thermal performance depends on PCB layout. The datasheet provides transient thermal impedance curves and derating data: on a 25.4 mm × 25.4 mm × 0.8 mm FR-4 board, total power dissipation drops from 1.5 W (1 unit) to 1.24 W (2 units) over 5 seconds, implying effective R_θJA ≈ 100–120 °C/W under those conditions.

UPA2591T1H-T1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2591T1H-T1-AT FAQ

1.How can I place an order for UPA2591T1H-T1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2591T1H-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2591T1H-T1-AT reliable?

The price and inventory of UPA2591T1H-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2591T1H-T1-AT is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2591T1H-T1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2591T1H-T1-AT?

UPA2591T1H-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2591T1H-T1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2591T1H-T1-AT?

For technical support, including UPA2591T1H-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2591T1H-T1-AT requirements.

6.How does Aetrix verify that UPA2591T1H-T1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2591T1H-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2591T1H-T1-AT meets industry standards.

7.What is the process for return or replacement of UPA2591T1H-T1-AT?

All UPA2591T1H-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2591T1H-T1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2591T1H-T1-AT part is unused and in its original packaging.

Return procedure for UPA2591T1H-T1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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