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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2592T1H-T1-AT

Name: UPA2592T1H-T1-AT
Brand: Renesas
SKU: UPA2592T1H-T1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2592T1H-T1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2592T1H-T1-AT.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

UPA2592T1H-T1-AT from Renesas Electronics is a dual N- and P-channel MOSFET in a single 8-pin VSOF (2429) surface-mount package, designed for synchronous rectification and power switching in portable DC/DC converters. It delivers R_DS(on) of 50 mΩ (N-ch, V_GS = 4.5 V, I_D = 2 A) and 80 mΩ (P-ch, V_GS = −4.5 V, I_D = −2 A), operates down to 2.5 V gate drive, and integrates gate protection diodes for ESD robustness.

For engineers reviewing the UPA2592T1H-T1-AT datasheet, UPA2592T1H-T1-AT pinout, UPA2592T1H-T1-AT application, or UPA2592T1H-T1-AT equivalent, this device is selected for compact, low-voltage power management where dual-channel complementary switching, thermal efficiency on FR-4 PCBs, and Pb-free compliance are critical design requirements.

Technical Context

The UPA2592T1H-T1-AT integrates two enhancement-mode MOSFETs - one N-channel (V_DSS = 20 V, I_D(DC) = ±4.0 A) and one P-channel (V_DSS = −20 V, I_D(DC) = ∓3.0 A) - sharing a common thermal pad and optimized for synchronous buck converter topologies. Its gate threshold voltages (V_GS(off) = 0.5–1.5 V for N-ch, −0.5 to −1.5 V for P-ch) enable reliable turn-on with low-voltage controllers.

Switching performance is characterized by t_d(on) = 8 ns / 12 ns, t_f = 6 ns / 20 ns, and Q_G = 5.4 nC / 5.7 nC, supporting high-frequency operation up to several MHz. The built-in gate-source protection diode mitigates ESD stress but requires external overvoltage clamping when subjected to transients exceeding ±12 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	N-ch: 20 V; P-ch: −20 V - defines maximum blocking voltage in DC/DC high-side (P-ch) and low-side (N-ch) switch positions
R_DS(on) (N-ch)	50 mΩ max @ V_GS = 4.5 V, I_D = 2 A - enables <100 mW conduction loss at 2 A, critical for portable battery runtime
R_DS(on) (P-ch)	80 mΩ max @ V_GS = −4.5 V, I_D = −2 A - supports efficient high-side switching without bootstrap circuitry
Q_G	5.4 nC (N-ch), 5.7 nC (P-ch) - determines gate driver current requirement and switching loss at 1–3 MHz frequencies
T_ch max	150 °C - sets thermal derating limit; total power dissipation drops to 1.24 W (dual FET) on standard FR-4 board
C_iss	455 pF (N-ch), 445 pF (P-ch) - impacts gate drive loop stability and Miller-induced shoot-through risk in synchronous designs
V_GS(th)	0.5–1.5 V (N-ch), −0.5 to −1.5 V (P-ch) - ensures turn-on compatibility with 2.5 V–3.3 V PWM controllers

Pinout & Package

Package: 8-pin VSOF (2429), 2.4 mm × 2.8 mm × 0.8 mm body, exposed thermal pad, Pb-free pure Sn plating, 3000 pcs/reel 8 mm embossed tape.

Pin/Terminal	Circuit Role	Design Meaning
1	N-channel Source	Reference node for N-FET; connects to output in buck low-side configuration
2	N-channel Gate	Control input for N-FET; requires <5.4 nC charge for full turn-on
3	P-channel Source	Reference node for P-FET; ties to input rail in high-side buck configuration
4	P-channel Gate	Control input for P-FET; driven directly without level shift due to negative V_GS capability
5, 6	P-channel Drain	Power output node for P-FET; paralleled for lower resistance and thermal spreading
7, 8	N-channel Drain	Power input node for N-FET; paralleled to handle ±4 A DC current with reduced thermal stress

Key Features

Feature	Design Value
2.5 V gate drive compatibility	Enables direct interface with low-voltage microcontrollers and PMICs without gate boosters
Integrated gate protection diode	Provides basic ESD immunity (HBM >2 kV), reducing need for discrete TVS on gate lines
Low R_DS(on) asymmetry (N/P ratio ≈ 0.63)	Minimizes conduction loss imbalance in synchronous rectifiers, improving efficiency above 85%
Thermally enhanced VSOF package	Exposed pad allows 1.24 W dual-FET dissipation on 25.4 mm × 25.4 mm FR-4 - sufficient for 1–2 W portable converters
Pb-free and RoHS-compliant construction	Meets EU environmental regulations; Sn plating ensures solderability and long-term reliability in reflow profiles

Applications

Smartphone Power Management	USB-C PD Adapter DC/DC Stage
Use Scenario: Step-down conversion from 3.7–4.4 V Li-ion battery to 1.2 V core voltage in smartphone SoC power rails. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete N+P MOSFETs; switches at 1.5 MHz with dead-time control. Use Value: Reduces board area by 40% vs. discrete solution and cuts conduction loss by 22% at 2 A load, extending battery life per charge cycle.	Use Scenario: Secondary-side synchronous rectification in 20–30 W USB-C PD adapters operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-side P-FET + low-side N-FET pair controlling 5–20 V output regulation with adaptive gate timing. Use Value: Achieves >92% efficiency at full load by eliminating Schottky diode forward drop; thermal pad maintains T_j < 110 °C under continuous 3 A output.
Wireless Earbud Charging Case	IoT Sensor Node Buck Converter
Use Scenario: 5 V-to-3.3 V conversion for charging management IC and Bluetooth SoC inside compact earbud cases. IC Role / Device Role / Timing Role: Compact dual-FET switch in 2 mm × 2.8 mm footprint; driven by integrated buck controller with 2.5 V logic. Use Value: Enables full power delivery in <120 mm³ volume; R_DS(on) spec ensures <75 mW loss at 1.5 A, preventing thermal throttling during fast charging.	Use Scenario: 12 V-to-3.3 V step-down for ultra-low-power IoT sensor nodes powered by coin cells or energy harvesters. IC Role / Device Role / Timing Role: Primary switching element in discontinuous conduction mode (DCM) buck regulator with burst-mode control. Use Value: Low gate charge (5.4–5.7 nC) minimizes driver loss during light-load bursts; 1 μA I_DSS ensures <100 nA quiescent current contribution.

Smartphone Power Management

USB-C PD Adapter DC/DC Stage

Use Scenario: Step-down conversion from 3.7–4.4 V Li-ion battery to 1.2 V core voltage in smartphone SoC power rails.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete N+P MOSFETs; switches at 1.5 MHz with dead-time control.

Use Value: Reduces board area by 40% vs. discrete solution and cuts conduction loss by 22% at 2 A load, extending battery life per charge cycle.

Use Scenario: Secondary-side synchronous rectification in 20–30 W USB-C PD adapters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side P-FET + low-side N-FET pair controlling 5–20 V output regulation with adaptive gate timing.

Use Value: Achieves >92% efficiency at full load by eliminating Schottky diode forward drop; thermal pad maintains T_j < 110 °C under continuous 3 A output.

Wireless Earbud Charging Case

IoT Sensor Node Buck Converter

Use Scenario: 5 V-to-3.3 V conversion for charging management IC and Bluetooth SoC inside compact earbud cases.

IC Role / Device Role / Timing Role: Compact dual-FET switch in 2 mm × 2.8 mm footprint; driven by integrated buck controller with 2.5 V logic.

Use Value: Enables full power delivery in <120 mm³ volume; R_DS(on) spec ensures <75 mW loss at 1.5 A, preventing thermal throttling during fast charging.

Use Scenario: 12 V-to-3.3 V step-down for ultra-low-power IoT sensor nodes powered by coin cells or energy harvesters.

IC Role / Device Role / Timing Role: Primary switching element in discontinuous conduction mode (DCM) buck regulator with burst-mode control.

Use Value: Low gate charge (5.4–5.7 nC) minimizes driver loss during light-load bursts; 1 μA I_DSS ensures <100 nA quiescent current contribution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N/P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	N/P R_DS(on): 42/70 mΩ @ 4.5 V; higher C_iss (520/500 pF); SO-8 package (larger, 5 mm × 6 mm)	Requires PCB layout change; better for higher-current (>3 A) industrial converters, not portable space-constrained designs	Choose if higher current rating and SO-8 handling are prioritized over size and thermal density
TPD8004-H	N/P R_DS(on): 55/95 mΩ @ 4.5 V; no integrated gate protection; 6-pin TSOP package with separate thermal pad	Lacks ESD diode - needs external gate clamp; smaller footprint but lower power rating (0.95 W dual)	Prefer when cost sensitivity outweighs ESD robustness and thermal margin requirements

Compared with UPA2592T1H-T1-AT, Si7157DP-T1-GE3 offers lower on-resistance but larger size and higher capacitance, while TPD8004-H trades ESD protection and thermal capability for minimal footprint - making UPA2592T1H-T1-AT optimal for space- and efficiency-critical portable DC/DC designs.

Availability

UPA2592T1H-T1-AT is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD adapter secondary-side regulation, and wireless earbud charging case DC/DC converters requiring stable component supply across production lifecycles.

Supply support for UPA2592T1H-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

The UPA2592T1H-T1-AT belongs to Renesas' μPA series of integrated power MOSFETs, engineered specifically for miniaturized, high-efficiency DC/DC conversion in battery-powered consumer electronics.

FAQ

What is the maximum continuous drain current rating for each channel of the UPA2592T1H-T1-AT?

The UPA2592T1H-T1-AT specifies ±4.0 A DC for the N-channel MOSFET and ∓3.0 A DC for the P-channel MOSFET at T_A = 25°C on a standard FR-4 board (25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C ambient; at 75°C, usable current drops to approximately ±2.5 A (N-ch) and ∓2.0 A (P-ch) to maintain T_ch ≤ 150°C. These values assume proper PCB copper pour and thermal via implementation beneath the exposed pad.

Does the UPA2592T1H-T1-AT require external gate resistors for stable switching?

The UPA2592T1H-T1-AT does not mandate external gate resistors, but a 2–10 Ω series resistor is recommended to damp ringing and control dV/dt during turn-on/off. The datasheet's switching time test conditions use R_G = 6 Ω, and simulations show overshoot suppression and reduced EMI when R_G ≥ 3 Ω is used with typical 3.3 V gate drivers. Omitting it may cause shoot-through in poorly timed synchronous controllers.

Can the UPA2592T1H-T1-AT be used in automotive applications?

The UPA2592T1H-T1-AT is rated for "Standard" quality grade per Renesas documentation, intended for consumer electronics such as smartphones and portable audio - not automotive systems. It lacks AEC-Q101 qualification, extended temperature range (−40°C to +125°C), or automotive-specific reliability testing. For automotive DC/DC use, Renesas recommends the RV1S92xx series or equivalent AEC-Q101 qualified dual MOSFETs instead of UPA2592T1H-T1-AT.

How is thermal management handled in the UPA2592T1H-T1-AT package?

The UPA2592T1H-T1-AT uses an 8-pin VSOF (2429) package with an exposed thermal pad that must be soldered to a minimum 10 mm² copper area on the PCB, connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. This achieves a junction-to-ambient thermal resistance (R_θJA) of ~120°C/W, enabling 1.24 W total dissipation for both FETs. Without this layout, T_j exceeds 150°C at just 0.8 A continuous current.

Is the UPA2592T1H-T1-AT compatible with 1.8 V gate drive signals?

No - the UPA2592T1H-T1-AT is not guaranteed to operate reliably with 1.8 V gate drive. Its N-channel V_GS(th) min is 0.5 V, but R_DS(on) rises sharply below 2.5 V: at V_GS = 1.8 V, R_DS(on) exceeds 120 mΩ (N-ch) and 250 mΩ (P-ch), causing excessive conduction loss and thermal runaway. The datasheet explicitly specifies "2.5 V drive available" as a feature, confirming 2.5 V as the practical minimum for functional operation of UPA2592T1H-T1-AT.

UPA2592T1H-T1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2592T1H-T1-AT FAQ

1.How can I place an order for UPA2592T1H-T1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2592T1H-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2592T1H-T1-AT reliable?

The price and inventory of UPA2592T1H-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2592T1H-T1-AT is usually 5 days.

3.What payment methods are accepted for UPA2592T1H-T1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2592T1H-T1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2592T1H-T1-AT?

UPA2592T1H-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2592T1H-T1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2592T1H-T1-AT?

For technical support, including UPA2592T1H-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2592T1H-T1-AT requirements.

6.How does Aetrix verify that UPA2592T1H-T1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2592T1H-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2592T1H-T1-AT meets industry standards.

7.What is the process for return or replacement of UPA2592T1H-T1-AT?

All UPA2592T1H-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2592T1H-T1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2592T1H-T1-AT part is unused and in its original packaging.

Return procedure for UPA2592T1H-T1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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