Renesas UPA2593T1H-T1-AT

Overview

UPA2593T1H-T1-AT from Renesas Electronics is a dual N- and P-channel MOSFET in a single 8-pin VSOF (2429) surface-mount package, designed for synchronous buck converters and portable power management systems. It delivers R_DS(on) of 58 mΩ (N-ch, V_GS = 10 V) and 140 mΩ (P-ch, V_GS = −10 V), supports 4.5 V gate drive, and integrates gate protection diodes for ESD robustness in space-constrained DC/DC applications.

For engineers reviewing the UPA2593T1H-T1-AT datasheet, UPA2593T1H-T1-AT pinout, UPA2593T1H-T1-AT application, or UPA2593T1H-T1-AT equivalent, key selection criteria include dual-channel complementary conduction capability, low-voltage gate compatibility, thermal derating on FR-4 boards, and discrete body diode performance in high-frequency switching topologies.

Technical Context

The UPA2593T1H-T1-AT integrates matched N- and P-channel enhancement-mode MOSFETs with independent source, gate, and drain terminals per channel. Its gate threshold voltages are V_GS(off) = 1.0–2.5 V (N-ch) and −1.0 to −2.5 V (P-ch), enabling logic-level control at 4.5 V while maintaining safe margin against spurious turn-on. The device uses silicon process technology optimized for low R_DS(on) × Q_G trade-off, with total gate charge of 7 nC (N-ch) and 8 nC (P-ch) at ±10 V drive.

Thermal design is constrained by its 8-pin VSOF (2429) package: total power dissipation is rated at 1.5 W for one FET active and 1.24 W for both simultaneously on an FR-4 board (25.4 mm × 25.4 mm × 0.8 mm). Transient thermal resistance curves confirm pulse handling up to 5 s, supporting intermittent load conditions in battery-powered systems.

Key Specifications

Pinout & Package

UPA2593T1H-T1-AT uses an 8-pin Very Small Outline Flat (VSOF) package with 0.65 mm pitch, measuring 2.8 mm × 2.4 mm × 0.8 mm. Thermal pad is not present; power dissipation relies on copper area under drain pads (pins 5,6,7,8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel MOSFET applications.

Compared with Si7157DP-T1-GE3 and DMC2038LSD-13, the UPA2593T1H-T1-AT offers the smallest footprint and integrated gate protection-critical for miniaturized portable electronics-while trading off some thermal headroom and requiring tighter gate drive timing control due to lower Q_G and faster transitions.

Availability

UPA2593T1H-T1-AT is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD sink regulation, and wearable sensor hub applications requiring stable component supply across high-mix, low-volume production runs.

Supply support for UPA2593T1H-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and consumer markets.

The μPA2593 product line targets portable equipment power conversion, delivering tightly matched complementary MOSFET pairs in ultra-compact packages to minimize PCB area and system-level BOM count.

FAQ

What is the maximum continuous drain current rating for each channel of the UPA2593T1H-T1-AT?

The UPA2593T1H-T1-AT specifies ±4.5 A DC for the N-channel and −3.5 A DC for the P-channel under standard test conditions (T_A = 25°C, mounted on FR-4). Derating applies above 25°C ambient; at 75°C, N-ch ID(DC) drops to ~2.8 A and P-ch to ~2.2 A based on the 1.5 W and 1.24 W power limits respectively. These values assume proper PCB copper area and airflow per the datasheet's thermal test board specification.

Does the UPA2593T1H-T1-AT require external gate resistors for stable operation?

Yes, the UPA2593T1H-T1-AT requires external gate resistors to control switching speed and suppress ringing. The datasheet specifies RG = 6 Ω for switching time measurements (e.g., t_d(on), t_f). Lower values increase dV/dt stress and EMI risk; higher values slow transitions and raise switching losses. For 500 kHz–1 MHz buck converters, 5–10 Ω is typical. The built-in gate protection diode does not eliminate need for series gate resistance.

Can the UPA2593T1H-T1-AT be used in a synchronous boost configuration?

No, the UPA2593T1H-T1-AT is not suitable for synchronous boost. Its P-channel device is rated for −40 V V_DSS and −3.5 A ID(DC), but boost topologies require the high-side switch to block output voltage plus input swing-often exceeding −40 V in 12 V or 24 V systems. Additionally, the P-FET's gate drive must track the switching node, which this part's fixed pinout and lack of floating supply support do not accommodate. It is designed explicitly for buck/half-bridge configurations.

Is the UPA2593T1H-T1-AT RoHS-compliant and lead-free?

Yes, the UPA2593T1H-T1-AT is Pb-free and RoHS-compliant. Per the ordering information, it features pure Sn (tin) lead plating and contains no lead in external electrodes or internal construction. The "-AT" suffix denotes the lead-free variant, and the marking "2593" on the package confirms compliance. It meets EU RoHS Directive 2011/65/EU and related regional environmental regulations.

How is thermal performance affected when both N- and P-channel FETs operate simultaneously?

When both channels conduct simultaneously, total power dissipation is limited to 1.24 W (vs. 1.5 W for single-channel use), per the "Total Power Dissipation (2 unit, 5 s)" rating. This reflects increased junction-to-ambient thermal resistance due to shared package heating. On the standard FR-4 test board (25.4 mm × 25.4 mm × 0.8 mm), simultaneous operation reduces allowable ambient temperature by ~15°C before reaching T_ch = 150°C. Layout with dedicated thermal vias under drain pads improves this margin.