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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2600T1R-E2-AX

Name: UPA2600T1R-E2-AX
Brand: Renesas
SKU: UPA2600T1R-E2-AX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2600T1R-E2-AX

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 6-WFDFN Exposed Pad

Datasheet:: UPA2600T1R-E2-AX.pdf

Description:: MOSFET N-CH 20V 7A 6HUSON

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Product details

Overview

UPA2600T1R-E2-AX from Renesas Electronics is an N-channel MOSFET designed for low-voltage switching applications in portable electronics. It delivers 7.0 A DC drain current, 20 V drain-to-source voltage rating, and ultra-low on-resistance of 13.8 mΩ at V_GS = 4.5 V, enabling high-efficiency power switching in compact battery-powered systems.

For engineers reviewing the UPA2600T1R-E2-AX datasheet, UPA2600T1R-E2-AX pinout, UPA2600T1R-E2-AX application, or UPA2600T1R-E2-AX equivalent, this device is selected for its 2.5 V gate drive capability, built-in gate protection diode, lead-free 6-pin HUSON2020 package, and optimized switching performance in space-constrained DC-DC and load-switch designs.

Technical Context

This MOSFET operates as a single N-channel enhancement-mode switch with a threshold voltage range of 0.5–1.5 V and supports logic-level gate drive down to 2.5 V. Its forward transfer admittance (|y_fs|) of 6.5 S at V_DS = 5 V confirms strong transconductance for fast switching transitions.

Thermal design is constrained by a channel temperature limit of 150°C and a transient thermal resistance of 113.6°C/W (ch-to-ambient, mounted on 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board), with safe operating area defined up to 28 A pulsed current under strict duty cycle conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage before avalanche; suitable for 12 V and lower input rail switching
R_DS(on)1	13.8 mΩ max @ V_GS = 4.5 V, I_D = 3.5 A - Enables <100 mW conduction loss at 3.5 A, critical for thermal management in handheld devices
I_D(DC)	±7.0 A - Continuous drain current rating at T_C = 25°C; defines steady-state load capacity in power path control
Q_G	7.9 nC - Total gate charge determines driver strength requirement and switching speed in PWM circuits
C_iss	870 pF - Input capacitance impacts gate drive loop stability and EMI filtering needs in high-frequency switching
V_F(S–D)	1.5 V @ I_F = 7.0 A - Body diode forward voltage affects reverse recovery losses in synchronous rectifier or H-bridge freewheeling
t_d(off)	42 ns - Turn-off delay time defines minimum dead-time setting in half-bridge configurations to prevent shoot-through

Pinout & Package

UPA2600T1R-E2-AX is housed in a 6-pin HUSON2020 surface-mount package (Renesas code PWSN0006JD-B), measuring 2.0 mm × 2.0 mm × 0.75 mm max height, with exposed drain pads for enhanced thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain	Common high-current output node; electrically tied internally and thermally connected to exposed pad for heat sinking
3	Gate	Control terminal requiring ≤±12 V gate-source voltage; protected by integrated ESD diode to source
4	Source	Reference node for gate drive and current return path; body diode anode connection

Key Features

Feature	Design Value
2.5 V logic-level gate drive	Enables direct interface with 2.5 V/3.3 V microcontrollers without level-shifting circuitry
Built-in gate protection diode	Provides ESD immunity per JESD22-A114 (≥2 kV HBM); reduces need for external gate clamping components
Low R_DS(on) at 4.5 V	Minimizes I²R conduction loss in battery-powered systems where efficiency directly impacts runtime
Lead-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; supports environmentally regulated end markets
Optimized switching timing	42 ns turn-off delay and 9 ns fall time enable >1 MHz operation in high-frequency DC-DC converters

Applications

Power Bank Load Switch	USB-C PD Ingress Protection
Use Scenario: Controls main power path between USB-C input and internal Li-ion battery during hot-plug events. IC Role / Device Role / Timing Role: High-side load switch with fast turn-off to isolate fault currents within microseconds. Use Value: 13.8 mΩ R_DS(on) limits voltage drop to <50 mV at 3.5 A, preserving charging efficiency while 42 ns t_d(off) enables rapid fault response.	Use Scenario: Blocks reverse current and clamps overvoltage transients on USB-C power delivery lines. IC Role / Device Role / Timing Role: Bidirectional protection switch leveraging body diode conduction and low V_F(S–D). Use Value: 1.5 V body diode forward voltage ensures minimal forward drop during reverse current flow, reducing heat generation during fault conditions.
Wireless Headphone DC-DC Converter	Smartwatch Display Backlight Driver
Use Scenario: Synchronous rectifier in buck converter supplying 3.3 V to Bluetooth SoC and audio codec. IC Role / Device Role / Timing Role: Low-side synchronous FET with optimized Q_G/C_iss ratio for high-frequency (>2 MHz) operation. Use Value: 7.9 nC total gate charge and 870 pF C_iss allow efficient drive with minimal gate driver power loss at 2 MHz switching.	Use Scenario: PWM-controlled current sink for white LED backlight in always-on display mode. IC Role / Device Role / Timing Role: Constant-current switch modulated at 1–5 kHz to regulate brightness without audible noise. Use Value: 2.5 V gate threshold enables direct PWM control from low-voltage MCU GPIO, eliminating level-shifters and saving PCB area.

Power Bank Load Switch

USB-C PD Ingress Protection

Use Scenario: Controls main power path between USB-C input and internal Li-ion battery during hot-plug events.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off to isolate fault currents within microseconds.

Use Value: 13.8 mΩ R_DS(on) limits voltage drop to <50 mV at 3.5 A, preserving charging efficiency while 42 ns t_d(off) enables rapid fault response.

Use Scenario: Blocks reverse current and clamps overvoltage transients on USB-C power delivery lines.

IC Role / Device Role / Timing Role: Bidirectional protection switch leveraging body diode conduction and low V_F(S–D).

Use Value: 1.5 V body diode forward voltage ensures minimal forward drop during reverse current flow, reducing heat generation during fault conditions.

Wireless Headphone DC-DC Converter

Smartwatch Display Backlight Driver

Use Scenario: Synchronous rectifier in buck converter supplying 3.3 V to Bluetooth SoC and audio codec.

IC Role / Device Role / Timing Role: Low-side synchronous FET with optimized Q_G/C_iss ratio for high-frequency (>2 MHz) operation.

Use Value: 7.9 nC total gate charge and 870 pF C_iss allow efficient drive with minimal gate driver power loss at 2 MHz switching.

Use Scenario: PWM-controlled current sink for white LED backlight in always-on display mode.

IC Role / Device Role / Timing Role: Constant-current switch modulated at 1–5 kHz to regulate brightness without audible noise.

Use Value: 2.5 V gate threshold enables direct PWM control from low-voltage MCU GPIO, eliminating level-shifters and saving PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AO3400A	R_DS(on) = 28 mΩ @ V_GS = 4.5 V; higher conduction loss; SOT-23 package	Lower current rating (5.7 A) and larger R_DS(on) limit use in high-efficiency, high-current paths	Select when cost sensitivity outweighs efficiency requirements and board space allows larger thermal footprint
SI2302DS-T1-GE3	R_DS(on) = 48 mΩ @ V_GS = 4.5 V; SOT-23-3L; no integrated gate protection diode	Lacks built-in ESD protection; requires external gate clamp; unsuitable for unbuffered MCU GPIO drive	Choose only with added external gate protection and when lower current (<2.5 A) suffices

Compared with AO3400A and SI2302DS-T1-GE3, UPA2600T1R-E2-AX provides superior conduction efficiency, integrated gate protection, and a thermally enhanced HUSON2020 package-making it optimal for space- and efficiency-critical portable power switches where 7 A continuous current and 2.5 V drive are required.

Availability

UPA2600T1R-E2-AX is available at Aetrix Electronics and suitable for portable power management, USB-C protection circuits, and wearable DC-DC conversion requiring stable component supply across production volumes.

Supply support for UPA2600T1R-E2-AX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for automotive, industrial, and consumer applications.

The UPA2600T1R-E2-AX belongs to Renesas' μPA series of small-signal and power MOSFETs engineered for high-efficiency, low-voltage switching in space-constrained portable electronics.

FAQ

What is the maximum continuous drain current rating for UPA2600T1R-E2-AX?

The UPA2600T1R-E2-AX has a maximum continuous drain current (I_D(DC)) of ±7.0 A at T_C = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management-specifically mounting on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board-and derates linearly above 25°C ambient per the published derating curve. The UPA2600T1R-E2-AX must not exceed this current under sustained DC conditions without thermal throttling.

Does UPA2600T1R-E2-AX include integrated ESD protection?

Yes, the UPA2600T1R-E2-AX integrates a gate-to-source protection diode explicitly described in the Equivalent Circuit diagram and noted in the datasheet's "Remark" section. This diode provides ESD robustness per JESD22-A114 (HBM ≥2 kV), but Renesas cautions that external protection remains necessary if voltages exceeding the ±12 V gate-source rating may occur. The UPA2600T1R-E2-AX relies on this internal diode for basic handling-level ESD, not system-level surge immunity.

Can UPA2600T1R-E2-AX be driven directly by a 2.5 V GPIO?

Yes, the UPA2600T1R-E2-AX is rated for 2.5 V drive capability, with R_DS(on)2 = 19.1 mΩ max at V_GS = 2.5 V and I_D = 3.5 A. Its gate threshold voltage (V_GS(off)) ranges from 0.5 V to 1.5 V, ensuring full enhancement well below 2.5 V. This allows direct interface with 2.5 V or 3.3 V microcontroller GPIOs without level-shifting circuitry-confirmed by both the Features list and Electrical Characteristics table in the UPA2600T1R-E2-AX datasheet.

What is the thermal resistance (R_th(ch–A)) of UPA2600T1R-E2-AX under standard mounting conditions?

The transient thermal resistance from channel to ambient (R_th(ch–A)) for UPA2600T1R-E2-AX is 113.6°C/W under the defined test condition: mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board with 5-second pulse power. This value appears in the Transient Thermal Resistance vs. Pulse Width graph on page 3 of the datasheet and is used to calculate junction temperature rise under pulsed loads. Steady-state thermal performance will differ and must be validated via layout-specific simulation or measurement.

Is UPA2600T1R-E2-AX compliant with RoHS and halogen-free standards?

Yes, UPA2600T1R-E2-AX is explicitly designated as lead-free and halogen-free in the Features section and Ordering Information note of the datasheet. It complies with the EU RoHS Directive 2011/65/EU and meets JEDEC JS709B requirements for halogen content. The "-E2-AX" suffix denotes Pb-free plating and halogen-free molding compound, making the UPA2600T1R-E2-AX suitable for environmentally regulated consumer and medical portable equipment.

UPA2600T1R-E2-AX Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 6-WFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 19.1mOhm @ 3.5A, 2.5V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 7.9 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-HUSON (2x2)

UPA2600T1R-E2-AX FAQ

1.How can I place an order for UPA2600T1R-E2-AX through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2600T1R-E2-AX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2600T1R-E2-AX reliable?

The price and inventory of UPA2600T1R-E2-AX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2600T1R-E2-AX is usually 5 days.

3.What payment methods are accepted for UPA2600T1R-E2-AX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2600T1R-E2-AX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2600T1R-E2-AX?

UPA2600T1R-E2-AX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2600T1R-E2-AX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2600T1R-E2-AX?

For technical support, including UPA2600T1R-E2-AX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2600T1R-E2-AX requirements.

6.How does Aetrix verify that UPA2600T1R-E2-AX is sourced from the original manufacturer or authorized distributors?

All UPA2600T1R-E2-AX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2600T1R-E2-AX meets industry standards.

7.What is the process for return or replacement of UPA2600T1R-E2-AX?

All UPA2600T1R-E2-AX units undergo pre-shipment inspection (PSI). If there is an issue with UPA2600T1R-E2-AX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2600T1R-E2-AX part is unused and in its original packaging.

Return procedure for UPA2600T1R-E2-AX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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