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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2630T1R-E2-AX

Name: UPA2630T1R-E2-AX
Brand: Renesas
SKU: UPA2630T1R-E2-AX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2630T1R-E2-AX

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 6-WFDFN Exposed Pad

Datasheet:: UPA2630T1R-E2-AX.pdf

Description:: MOSFET P-CH 12V 7A 6HUSON

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Product details

Overview

UPA2630T1R-E2-AX from Renesas Electronics is a P-channel MOSFET designed for low-voltage power switching in portable electronics. It delivers –7.0 A DC drain current, 28 mΩ R_DS(on) at V_GS = –4.5 V, and –12 V V_DSS, with built-in gate protection diode and lead-free/halogen-free construction.

For engineers reviewing the UPA2630T1R-E2-AX datasheet, UPA2630T1R-E2-AX pinout, UPA2630T1R-E2-AX application, or UPA2630T1R-E2-AX equivalent, key selection criteria include low-threshold drive capability (–1.8 V), fast switching (t_d(off) = 76 ns), thermal performance on standard PCBs, and compatibility with compact 6-pin HUSON2020 packaging.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with integrated gate protection diode. Its channel temperature rating of 150°C and transient thermal resistance of 113.6°C/W (ch-to-ambient) support reliable operation under pulsed loads up to –28 A with ≤1% duty cycle.

The MOSFET exhibits strong gate drive flexibility: R_DS(on) remains 59 mΩ even at V_GS = –1.8 V, enabling direct interface with low-voltage logic controllers. Input capacitance (C_iss = 1260 pF) and gate charge (Q_G = 11.3 nC) are optimized for efficient high-frequency switching in battery-powered systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–12 V: Maximum blocking voltage for use in 3.3 V or 5 V rail switching applications.
I_D(DC)	–7.0 A: Continuous load current capacity on standard 25.4 mm × 25.4 mm glass epoxy board.
R_DS(on) @ V_GS = –4.5 V	28 mΩ max: Enables <196 mW conduction loss at 3.5 A, reducing thermal stress in portable designs.
t_d(off)	76 ns: Supports >1 MHz switching in synchronous buck or load-switch topologies.
C_iss	1260 pF: Matches typical gate driver output capability without requiring external buffering.
Q_G	11.3 nC: Determines gate drive energy requirement; compatible with low-power microcontroller GPIOs via series resistor.
V_GS(off)	–0.4 to –1.1 V: Confirms enhancement-mode behavior and ensures full turn-off at 0 V gate bias.

Pinout & Package

Package: 6-pin HUSON2020 (RENESAS code PWSN0006JD-B), 2.0 mm × 2.0 mm × 0.75 mm profile, exposed drain pad for thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain	Common high-side switch node; electrically and thermally connected to exposed pad for PCB heat sinking.
3	Gate	Control input; protected by internal ESD diode to source; requires no external gate resistor for basic logic-level drive.
4	Source	Reference node for gate drive; connects to system ground or positive rail depending on high-side/low-side configuration.

Key Features

Feature	Design Value
–1.8 V gate drive compatibility	Enables direct control from 1.8 V I/O domains without level-shifting circuitry.
Built-in gate protection diode	Provides ESD immunity per JESD22-A114 (±2 kV HBM); reduces need for external TVS on gate line.
Low R_DS(on) at low V_GS	35 mΩ max at –2.5 V allows robust operation in brown-out or battery sag conditions.
Lead-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B for green manufacturing.
Fast switching with low Q_GD/Q_G	Q_GD = 2.8 nC / Q_G = 11.3 nC ratio (25%) minimizes Miller-induced shoot-through risk in bridge configurations.

Applications

Smartphone Power Management	USB-C Load Switch
Use Scenario: Controlling power delivery to USB peripherals or camera modules in smartphones during sleep/wake transitions. IC Role / Device Role / Timing Role: High-side load switch managing 3.3 V or 5 V bus isolation with <100 ns response time. Use Value: Low 28 mΩ R_DS(on) limits voltage drop and self-heating during sustained 3.5 A loads, preserving battery runtime.	Use Scenario: Enabling/disabling VBUS path in USB-C receptacles with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: Reverse-polarity protected P-channel switch placed between source and load with body diode oriented for forward conduction. Use Value: Built-in gate protection diode and –1.8 V threshold allow integration with USB PD controller GPIOs without discrete protection components.
Wearable Battery Protection	Industrial Sensor Node Power Gating
Use Scenario: Isolating backup coin-cell or LiPo battery from system during charging or fault conditions in fitness trackers. IC Role / Device Role / Timing Role: Low-quiescent-current power switch controlled by fuel-gauge IC or microcontroller. Use Value: Gate leakage <10 μA at –8 V ensures minimal standby current draw, extending shelf life of sealed devices.	Use Scenario: Powering down environmental sensors (e.g., temperature, humidity) between measurement cycles in wireless IoT nodes. IC Role / Device Role / Timing Role: Duty-cycled high-side switch synchronizing with MCU deep-sleep mode to minimize average system current. Use Value: Fast 76 ns turn-off delay enables precise timing control, reducing sensor active time by >30% versus slower alternatives.

Smartphone Power Management

USB-C Load Switch

Use Scenario: Controlling power delivery to USB peripherals or camera modules in smartphones during sleep/wake transitions.

IC Role / Device Role / Timing Role: High-side load switch managing 3.3 V or 5 V bus isolation with <100 ns response time.

Use Value: Low 28 mΩ R_DS(on) limits voltage drop and self-heating during sustained 3.5 A loads, preserving battery runtime.

Use Scenario: Enabling/disabling VBUS path in USB-C receptacles with overcurrent and reverse-polarity protection.

IC Role / Device Role / Timing Role: Reverse-polarity protected P-channel switch placed between source and load with body diode oriented for forward conduction.

Use Value: Built-in gate protection diode and –1.8 V threshold allow integration with USB PD controller GPIOs without discrete protection components.

Wearable Battery Protection

Industrial Sensor Node Power Gating

Use Scenario: Isolating backup coin-cell or LiPo battery from system during charging or fault conditions in fitness trackers.

IC Role / Device Role / Timing Role: Low-quiescent-current power switch controlled by fuel-gauge IC or microcontroller.

Use Value: Gate leakage <10 μA at –8 V ensures minimal standby current draw, extending shelf life of sealed devices.

Use Scenario: Powering down environmental sensors (e.g., temperature, humidity) between measurement cycles in wireless IoT nodes.

IC Role / Device Role / Timing Role: Duty-cycled high-side switch synchronizing with MCU deep-sleep mode to minimize average system current.

Use Value: Fast 76 ns turn-off delay enables precise timing control, reducing sensor active time by >30% versus slower alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ –4.5 V; smaller SOT-23 package; no integrated gate protection diode.	Higher conduction loss limits use to <1 A loads; requires external ESD protection in handheld designs.	Choose for space-constrained layouts where thermal budget permits higher R_DS(on).
AO3401A	R_DS(on) = 44 mΩ @ –4.5 V; TO-236 package; higher C_iss (1000 pF) but no gate protection diode.	Slower switching due to higher Q_G (12 nC); suitable for <500 kHz applications only.	Prefer when cost sensitivity outweighs need for ultra-low R_DS(on) and integrated protection.

Compared with Si2301DDS-T1-GE3 and AO3401A, the UPA2630T1R-E2-AX provides superior low-V_GS drive capability, lower conduction loss, and built-in gate protection-making it optimal for high-reliability, compact portable power switches where layout area and component count are critical.

Availability

UPA2630T1R-E2-AX is available at Aetrix Electronics and suitable for smartphone power management, USB-C load switching, and wearable battery protection requiring stable component supply across production ramps.

Supply support for UPA2630T1R-E2-AX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The μPA2630T1R belongs to Renesas' ultra-compact power MOSFET family targeting portable electronics; it was engineered to replace larger SOT-23/SOP-8 devices in space- and efficiency-critical battery-powered applications.

FAQ

What is the maximum continuous drain current rating for UPA2630T1R-E2-AX?

The UPA2630T1R-E2-AX has a rated DC drain current (I_D(DC)) of –7.0 A when mounted on a standard 25.4 mm × 25.4 mm glass epoxy board. This rating assumes ambient temperature ≤25°C and accounts for thermal derating above that point per the published PT vs. T_A curve. At elevated temperatures, the usable current decreases linearly to zero at 150°C channel temperature.

Does UPA2630T1R-E2-AX require an external gate resistor for logic-level drive?

No, the UPA2630T1R-E2-AX does not require an external gate resistor when driven directly from 1.8 V or 3.3 V GPIOs, thanks to its low gate charge (Q_G = 11.3 nC) and integrated gate protection diode. However, a small series resistor (e.g., 10 Ω) is recommended in high-noise environments to dampen ringing and reduce EMI during fast switching transitions of the UPA2630T1R-E2-AX.

Can UPA2630T1R-E2-AX be used in high-side switch configurations?

Yes, the UPA2630T1R-E2-AX is specifically suited for high-side switching due to its P-channel architecture and –12 V V_DSS rating. When used in high-side mode, the source connects to the positive rail and the drain to the load. The UPA2630T1R-E2-AX's low R_DS(on) at –4.5 V ensures minimal voltage drop and power loss even under full –7.0 A load conditions.

What is the thermal resistance from channel to ambient for UPA2630T1R-E2-AX?

The transient thermal resistance (R_th(ch–A)) of the UPA2630T1R-E2-AX is 113.6°C/W when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. This value applies to short-duration pulses (≤5 s); steady-state thermal performance depends on PCB copper area and layer stack-up. For continuous operation, design must ensure channel temperature stays below 150°C using this R_th value and actual power dissipation of the UPA2630T1R-E2-AX.

Is UPA2630T1R-E2-AX compliant with RoHS and halogen-free standards?

Yes, the UPA2630T1R-E2-AX is explicitly certified as lead-free and halogen-free per the manufacturer's datasheet (R07DS0990EJ0100). It complies with EU RoHS Directive 2011/65/EU and meets JEDEC JS709B requirements for green packaging. The "E2-AX" suffix denotes Pb-free plating and halogen-free molding compound, confirmed in Renesas' official ordering information for the UPA2630T1R-E2-AX.

UPA2630T1R-E2-AX Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 6-WFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 59mOhm @ 3.5A, 1.8V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 11.3 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-HUSON (2x2)

UPA2630T1R-E2-AX FAQ

1.How can I place an order for UPA2630T1R-E2-AX through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2630T1R-E2-AX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2630T1R-E2-AX reliable?

The price and inventory of UPA2630T1R-E2-AX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2630T1R-E2-AX is usually 5 days.

3.What payment methods are accepted for UPA2630T1R-E2-AX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2630T1R-E2-AX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2630T1R-E2-AX?

UPA2630T1R-E2-AX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2630T1R-E2-AX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2630T1R-E2-AX?

For technical support, including UPA2630T1R-E2-AX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2630T1R-E2-AX requirements.

6.How does Aetrix verify that UPA2630T1R-E2-AX is sourced from the original manufacturer or authorized distributors?

All UPA2630T1R-E2-AX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2630T1R-E2-AX meets industry standards.

7.What is the process for return or replacement of UPA2630T1R-E2-AX?

All UPA2630T1R-E2-AX units undergo pre-shipment inspection (PSI). If there is an issue with UPA2630T1R-E2-AX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2630T1R-E2-AX part is unused and in its original packaging.

Return procedure for UPA2630T1R-E2-AX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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