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Renesas UPA2631T1R-E2-AX
- Part No.:
- UPA2631T1R-E2-AX
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 6-WFDFN Exposed Pad
- Datasheet:
-
UPA2631T1R-E2-AX.pdf
- Description:
- MOSFET P-CH 20V 6A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,757
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Product details
Overview
UPA2631T1R-E2-AX from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency power switching in portable electronics. It delivers –6.0 A DC drain current, –20 V drain-to-source voltage rating, and 32 mΩ maximum RDS(on) at VGS = –4.5 V, enabling compact battery-powered load switching with minimal conduction loss.
For engineers reviewing the UPA2631T1R-E2-AX datasheet, UPA2631T1R-E2-AX pinout, UPA2631T1R-E2-AX application, or UPA2631T1R-E2-AX equivalent, key selection criteria include gate-threshold compatibility with 1.8 V logic, built-in gate protection diode, lead-free 6-pin HUSON2020 package, and verified safe operating area under pulsed conditions up to –24 A.
Technical Context
This device operates as a single P-channel switch with gate-controlled depletion of the channel under negative VGS. Its –1.1 V typical gate threshold (VGS(off)) and –1.8 V logic-level drive capability enable direct interfacing with low-voltage microcontrollers without level-shifting circuitry.
Thermal performance is defined for mounting on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board, with 113.6 °C/W transient thermal resistance and 2.5 W total power dissipation limit at TA = 25 °C - supporting thermally constrained PCB layouts in space-limited applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum blocking voltage for battery-input circuits up to 12 V nominal systems with margin. |
| ID(DC) | –6.0 A: Continuous load current handling for USB-powered peripherals or display backlight drivers. |
| RDS(on)1 | 32 mΩ max @ VGS = –4.5 V, ID = –3.0 A: Low conduction loss enabling <100 mW dissipation at 3 A. |
| QG | 12.5 nC: Gate charge optimized for fast turn-on/turn-off with standard 6 Ω gate resistor and 4 V drive. |
| Ciss | 1240 pF: Input capacitance compatible with low-power driver ICs and stable against ringing in compact layouts. |
| VF(S–D) | 1.5 V @ IF = 6.0 A: Body diode forward voltage suitable for synchronous rectification or reverse-polarity protection. |
| td(off) | 89 ns: Turn-off delay enabling >1 MHz switching in DC-DC converter high-side control or PWM dimming. |
Pinout & Package
Package: 6-pin HUSON2020 (2.0 mm × 2.0 mm, 0.75 mm max height), lead-free and halogen-free, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | Common high-current output node; internally connected to exposed thermal pad for PCB heat sinking. |
| 3 | Gate | Control input requiring negative voltage relative to source; protected by integrated ESD diode to source. |
| 4 | Source | Reference node for gate drive and load return path; tied to system ground or battery negative in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| –1.8 V logic-level gate drive | Enables direct interface with 1.8 V/2.5 V microcontroller GPIOs without external level shifters. |
| Built-in gate protection diode | ESD protection between gate and source reduces need for external TVS in handheld product designs. |
| Low RDS(on) at low VGS | 62 mΩ max at VGS = –1.8 V supports efficient operation even under weak gate drive conditions. |
| Optimized switching timing | 9.5 ns td(on) and 76 ns tf support clean edge transitions in high-frequency load switching. |
| Lead-free & halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements. |
Applications
| USB Power Switching | Portable Display Backlight Control |
|---|---|
|
Use Scenario: Selective power gating of USB peripheral ports in smartphones and tablets to meet USB On-The-Go (OTG) power budget limits. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS delivery with fast enable/disable response. Use Value: 32 mΩ RDS(on) minimizes voltage drop and self-heating during 500 mA–1 A charging loads. |
Use Scenario: PWM-controlled current regulation for white LED strings in OLED/LCD displays of wearables and ultra-thin notebooks. IC Role / Device Role / Timing Role: Low-side or high-side current sink/source switch synchronized to display frame timing. Use Value: 89 ns td(off) ensures precise duty-cycle fidelity at 1–5 kHz dimming frequencies. |
| Battery Protection Circuit | Reverse-Polarity Input Protection |
|
Use Scenario: Overcurrent and short-circuit shutdown in single-cell Li-ion battery packs using external sense resistor and comparator feedback. IC Role / Device Role / Timing Role: Fast-acting power FET in series with battery anode, triggered by protection IC fault signal. Use Value: –24 A pulsed ID rating accommodates brief inrush currents while maintaining SOA integrity. |
Use Scenario: Polarity-reversal safeguard for 3.3 V/5 V input rails in field-deployable sensors and medical monitors. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with body diode conducting only during reverse connection. Use Value: 1.5 V VF(S–D) limits forward conduction loss while ensuring robust reverse-blocking at –20 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DS-T1-E3 | RDS(on) = 115 mΩ @ VGS = –2.5 V; smaller SOT-23 package; no integrated gate protection diode. | Higher conduction loss limits use to ≤500 mA loads; requires external ESD protection in handheld designs. | Preferred where board space is critical and gate drive is ≥–4.5 V; not recommended for 1.8 V logic interfaces. |
| AO3401A | RDS(on) = 44 mΩ @ VGS = –4.5 V; TO-236 package; higher Ciss (1000 pF); no gate protection diode. | Slower switching due to higher gate charge (17 nC); larger footprint than HUSON2020 reduces layout density. | Suitable for cost-sensitive industrial controls where thermal margin exceeds 2.5 W; avoid in portable battery systems. |
Compared with Si2301DS-T1-E3 and AO3401A, the UPA2631T1R-E2-AX provides superior 1.8 V drive capability, integrated gate protection, and 2.0 mm × 2.0 mm footprint - making it uniquely suited for space-constrained, low-voltage portable power switches requiring robust ESD immunity and fast switching.
Availability
UPA2631T1R-E2-AX is available at Aetrix Electronics and suitable for USB power management, portable display backlight control, battery protection circuits, and reverse-polarity input protection requiring stable component supply across production lifecycles.
Supply support for UPA2631T1R-E2-AX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.
The UPA2631T1R-E2-AX belongs to Renesas' μPA ultra-compact power MOSFET family, engineered specifically for high-density portable electronics requiring logic-level drive, low RDS(on), and robust ESD tolerance.
FAQ
What is the maximum continuous drain current rating for the UPA2631T1R-E2-AX?
The UPA2631T1R-E2-AX has a rated continuous drain current (ID(DC)) of –6.0 A at TA = 25 °C when mounted on a specified 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Derating applies above 25 °C ambient, with zero power at 150 °C channel temperature. This rating ensures reliable operation in handheld devices with active thermal management.
Does the UPA2631T1R-E2-AX support 1.8 V logic-level gate drive?
Yes, the UPA2631T1R-E2-AX is explicitly characterized for –1.8 V gate drive, with RDS(on)3 = 62 mΩ maximum at VGS = –1.8 V and ID = –3.0 A. Its –1.1 V typical gate threshold enables full enhancement under 1.8 V logic swing, eliminating the need for external level shifters in modern low-voltage microcontroller interfaces.
What is the purpose of the built-in gate protection diode in the UPA2631T1R-E2-AX?
The built-in gate-to-source protection diode in the UPA2631T1R-E2-AX safeguards the gate oxide against electrostatic discharge (ESD) events during handling and assembly. While this diode provides Class 2 HBM ESD protection per JEDEC standards, Renesas specifies that external overvoltage protection remains necessary if gate voltage may exceed ±8 V in end-use applications.
Can the UPA2631T1R-E2-AX be used in reverse-polarity protection circuits?
Yes, the UPA2631T1R-E2-AX is commonly deployed in reverse-polarity protection due to its P-channel topology and 1.5 V body diode forward voltage (VF(S–D)) at 6.0 A. When placed in series with the positive rail, it blocks reverse input while allowing normal forward conduction - provided gate is biased correctly relative to source during fault conditions.
What package type does the UPA2631T1R-E2-AX use, and how does it aid thermal performance?
The UPA2631T1R-E2-AX uses the 6-pin HUSON2020 package (2.0 mm × 2.0 mm, 0.75 mm max height), featuring an exposed drain pad that serves as the primary thermal path. With a transient thermal resistance (Rth(ch–A)) of 113.6 °C/W on a 25.4 mm × 25.4 mm board, this package enables effective heat dissipation in ultra-thin portable enclosures where airflow is limited.
UPA2631T1R-E2-AX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 6-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 3A, 1.8V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 12.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1240 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
UPA2631T1R-E2-AX FAQ
1.How can I place an order for UPA2631T1R-E2-AX through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2631T1R-E2-AX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2631T1R-E2-AX reliable?
The price and inventory of UPA2631T1R-E2-AX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2631T1R-E2-AX is usually 5 days.
3.What payment methods are accepted for UPA2631T1R-E2-AX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2631T1R-E2-AX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2631T1R-E2-AX?
UPA2631T1R-E2-AX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2631T1R-E2-AX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2631T1R-E2-AX?
For technical support, including UPA2631T1R-E2-AX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2631T1R-E2-AX requirements.
6.How does Aetrix verify that UPA2631T1R-E2-AX is sourced from the original manufacturer or authorized distributors?
All UPA2631T1R-E2-AX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2631T1R-E2-AX meets industry standards.
7.What is the process for return or replacement of UPA2631T1R-E2-AX?
All UPA2631T1R-E2-AX units undergo pre-shipment inspection (PSI). If there is an issue with UPA2631T1R-E2-AX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2631T1R-E2-AX part is unused and in its original packaging.
Return procedure for UPA2631T1R-E2-AX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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