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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2701GR-E1-AT

Name: UPA2701GR-E1-AT
Brand: Renesas
SKU: UPA2701GR-E1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2701GR-E1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.173", 4.40mm Width)

Datasheet:: UPA2701GR-E1-AT.pdf

Description:: MOSFET N-CH 30V 14A 8PSOP

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Product details

Overview

UPA2701GR-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for synchronous rectification and high-efficiency DC/DC conversion in notebook computer power management systems. It features R_DS(on)1 = 7.5 mΩ max at V_GS = 10 V / I_D = 7.0 A, R_DS(on)2 = 11.6 mΩ max at V_GS = 4.5 V / I_D = 7.0 A, C_iss = 1200 pF typ, V_DSS = 30 V, and operates in Power HSOP8 package with integrated heat spreader.

For engineers reviewing the UPA2701GR-E1-AT datasheet, UPA2701GR-E1-AT pinout, UPA2701GR-E1-AT application, or UPA2701GR-E1-AT equivalent, key selection criteria include low-voltage gate drive capability (4.5 V logic-level compatible), avalanche ruggedness (E_AS = 32.4 mJ), thermal performance (R_th(ch–C) = 4.46 °C/W), and surface-mount suitability for compact laptop VRM layouts.

Technical Context

This device implements a trench-gate, silicon-based N-channel enhancement-mode MOSFET architecture optimized for high-frequency switching in buck converter output stages. Its low Q_G (12 nC) and fast switching times (t_d(on) = 10 ns, t_f = 11 ns) support operation above 500 kHz while minimizing conduction and switching losses.

The integrated body diode exhibits V_F(S–D) = 0.8–1.2 V at I_F = 14 A and t_rr = 32 ns, enabling efficient synchronous rectification without external Schottky diodes. The Power HSOP8 package provides enhanced thermal dissipation via exposed drain paddle and standardized 1.27 mm pitch leadframe.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 24 V nominal with 25% margin for transient spikes in notebook adapter and battery-fed DC/DC stages.
R_DS(on)1	7.5 mΩ max @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 14 A continuous drain current in high-side switch position.
R_DS(on)2	11.6 mΩ max @ V_GS = 4.5 V - Ensures full enhancement with standard 5 V or 4.5 V controller gate drivers, eliminating need for charge pumps.
C_iss	1200 pF typ @ V_DS = 10 V - Limits gate drive power requirement to <1.5 mW at 1 MHz switching, easing driver IC selection.
E_AS	32.4 mJ - Withstands single-pulse inductive energy events (e.g., load dump, phase error) without failure under controlled test conditions.
T_ch max	150 °C - Allows sustained operation at junction temperatures typical of thermally constrained notebook chassis environments.
Q_G	12 nC - Reduces required gate drive current to ~12 mA average at 1 MHz, supporting integration with low-power PWM controllers.

Pinout & Package

UPA2701GR-E1-AT is housed in Power HSOP8 (Heat Spreader SOP-8), an 8-pin surface-mount package with exposed drain paddle for thermal conduction to PCB copper. Pin 1–3 and Pin 5–9 are internally connected as source and drain terminals respectively; Pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal parallel die; connects directly to power ground plane for minimal loop inductance in high-di/dt paths.
4	Gate	Single-point gate input; requires <12 nC charge for full turn-on; sensitive to ESD-external TVS recommended per Renesas note.
5, 6, 7, 8, 9	Drain	Multi-terminal drain connection to exposed paddle; enables low-inductance, high-current routing to input capacitor and inductor node.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤11.6 mΩ at V_GS = 4.5 V supports direct interface with 5 V or 4.5 V PWM controllers without level-shifting circuitry.
Low input capacitance	C_iss = 1200 pF minimizes gate drive power and propagation delay, critical for maintaining tight duty-cycle control in high-frequency VRMs.
Avalanche-rated construction	Rated for single-pulse E_AS = 32.4 mJ ensures robustness against inductive kickback during abnormal switching transitions in synchronous buck topologies.
Thermally enhanced package	Power HSOP8's R_th(ch–C) = 4.46 °C/W allows 28 W power dissipation at T_C = 25 °C-enabling higher current density than standard SO-8 in space-constrained designs.
Integrated ESD protection diode	Internal gate-source Zener (±20 V rating) provides baseline ESD immunity; external RC snubber still required per Renesas design note for system-level reliability.

Applications

High-Efficiency Notebook CPU VRM	Synchronous Buck Converter for GPU Core Supply
Use Scenario: Primary high-side switch in 1–2 phase 1.0–1.3 V / 30–60 A CPU voltage regulator modules on ultra-thin notebooks. IC Role / Device Role / Timing Role: High-frequency (≥500 kHz) power switch operating in hard-switched synchronous buck topology with dedicated PWM controller. Use Value: Low R_DS(on) and Q_G reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% versus comparable 30 V MOSFETs in same footprint.	Use Scenario: Dual-phase synchronous rectifier in discrete GPU core supply delivering 0.8–1.2 V / 40–80 A in gaming laptops. IC Role / Device Role / Timing Role: Low-side switch paired with complementary high-side FET; leverages fast body diode recovery (t_rr = 32 ns) for seamless dead-time conduction. Use Value: Integrated body diode eliminates need for external Schottky, reducing BOM count and PCB area while maintaining <0.5% voltage droop during transient load steps.
USB-C PD Fast-Charge DC/DC Stage	Industrial 24 V Input Step-Down Module
Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapter DC/DC stage converting 9–20 V input to 5 V/9 V/15 V/20 V outputs. IC Role / Device Role / Timing Role: Output rectifier operating in continuous conduction mode (CCM) with adaptive gate timing driven by dedicated SR controller. Use Value: 4.5 V gate threshold enables reliable turn-on across full input voltage range, sustaining >94% peak efficiency even at 10% load due to low R_DS(on) and C_iss.	Use Scenario: Main switching element in DIN-rail mounted 24 V to 5/12 V industrial DC/DC module for PLC I/O and sensor power. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in isolated flyback or non-isolated buck converter operating at 250–400 kHz. Use Value: Avalanche rating (IAS = 18 A) and 150 °C channel temperature rating ensure field reliability under 24 V bus transients and ambient temperatures up to 70 °C.

High-Efficiency Notebook CPU VRM

Synchronous Buck Converter for GPU Core Supply

Use Scenario: Primary high-side switch in 1–2 phase 1.0–1.3 V / 30–60 A CPU voltage regulator modules on ultra-thin notebooks.

IC Role / Device Role / Timing Role: High-frequency (≥500 kHz) power switch operating in hard-switched synchronous buck topology with dedicated PWM controller.

Use Value: Low R_DS(on) and Q_G reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% versus comparable 30 V MOSFETs in same footprint.

Use Scenario: Dual-phase synchronous rectifier in discrete GPU core supply delivering 0.8–1.2 V / 40–80 A in gaming laptops.

IC Role / Device Role / Timing Role: Low-side switch paired with complementary high-side FET; leverages fast body diode recovery (t_rr = 32 ns) for seamless dead-time conduction.

Use Value: Integrated body diode eliminates need for external Schottky, reducing BOM count and PCB area while maintaining <0.5% voltage droop during transient load steps.

USB-C PD Fast-Charge DC/DC Stage

Industrial 24 V Input Step-Down Module

Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapter DC/DC stage converting 9–20 V input to 5 V/9 V/15 V/20 V outputs.

IC Role / Device Role / Timing Role: Output rectifier operating in continuous conduction mode (CCM) with adaptive gate timing driven by dedicated SR controller.

Use Value: 4.5 V gate threshold enables reliable turn-on across full input voltage range, sustaining >94% peak efficiency even at 10% load due to low R_DS(on) and C_iss.

Use Scenario: Main switching element in DIN-rail mounted 24 V to 5/12 V industrial DC/DC module for PLC I/O and sensor power.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in isolated flyback or non-isolated buck converter operating at 250–400 kHz.

Use Value: Avalanche rating (IAS = 18 A) and 150 °C channel temperature rating ensure field reliability under 24 V bus transients and ambient temperatures up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3 (Vishay)	V_DSS = 30 V, R_DS(on) = 6.8 mΩ @ 10 V, but Q_G = 22 nC - higher gate drive demand and slower switching.	Larger C_iss (1800 pF) limits usable frequency to ≤300 kHz; less suitable for >500 kHz notebook VRMs.	Preferred where lower R_DS(on) outweighs switching speed; verify gate driver capability before substitution.
IRF7470PBF (Infineon)	V_DSS = 30 V, R_DS(on) = 8.5 mΩ @ 10 V, C_iss = 1100 pF, but no specified E_AS rating - unverified avalanche ruggedness.	Not characterized for single-pulse avalanche energy; unsuitable for inductive load applications requiring E_AS >15 mJ.	Acceptable for non-avalanche-critical applications; avoid in high-reliability or high-di/dt synchronous rectifier roles.

Compared with Si7850DP-T1-GE3 and IRF7470PBF, UPA2701GR-E1-AT delivers optimal balance of low gate charge (12 nC), verified avalanche energy (32.4 mJ), and 4.5 V logic-level compatibility-making it uniquely suited for high-frequency, high-reliability synchronous buck converters in thermally constrained portable electronics.

Availability

UPA2701GR-E1-AT is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, notebook CPU/GPU VRMs, and USB-C PD fast-charge adapters requiring stable component supply and long-term lifecycle continuity.

Supply support for UPA2701GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The UPA2701GR-E1-AT belongs to Renesas' legacy µPA series of power MOSFETs engineered specifically for high-density, high-efficiency power conversion in portable computing platforms-prioritizing low R_DS(on), fast switching, and thermal robustness in compact packages.

FAQ

What is the maximum continuous drain current rating for UPA2701GR-E1-AT at 25°C case temperature?

The UPA2701GR-E1-AT supports I_D(DC)1 = ±35 A at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes mounting on a heatsink or thermally enhanced PCB capable of maintaining case temperature at 25°C; derating applies above this temperature per the published thermal curves in the datasheet. Actual design current must consider layout, airflow, and adjacent component heating.

Does UPA2701GR-E1-AT support 4.5 V gate drive for full enhancement in synchronous rectifier applications?

Yes, UPA2701GR-E1-AT is fully characterized for R_DS(on)2 = 11.6 mΩ max at V_GS = 4.5 V and I_D = 7.0 A, confirming reliable enhancement with standard 4.5 V logic-level gate drivers. This enables direct use in synchronous buck low-side switches without gate boosting, simplifying controller selection and reducing bill-of-materials cost in UPA2701GR-E1-AT-based designs.

What is the thermal resistance from channel to case (R_th(ch–C)) for UPA2701GR-E1-AT?

The UPA2701GR-E1-AT has R_th(ch–C) = 4.46 °C/W, measured under TC = 25°C conditions. This value reflects the intrinsic thermal path from silicon channel to the exposed drain paddle in the Power HSOP8 package. Effective thermal design requires soldering the paddle to a minimum 1-inch² copper pour with ≥4 thermal vias to internal ground planes to realize this performance in actual UPA2701GR-E1-AT implementations.

Is UPA2701GR-E1-AT rated for avalanche energy, and what is its single-pulse specification?

Yes, UPA2701GR-E1-AT is avalanche-rated with E_AS = 32.4 mJ and I_AS = 18 A under defined test conditions (T_ch = 25°C, V_DD = 15 V, R_G = 25 Ω, L = 100 µH). This rating validates its ability to absorb inductive switching energy without failure in properly designed synchronous buck circuits, a key differentiator for UPA2701GR-E1-AT over non-avalanche-rated alternatives.

What package type does UPA2701GR-E1-AT use, and how does it differ from standard SO-8?

UPA2701GR-E1-AT uses the Power HSOP8 package-a thermally enhanced variant of SO-8 featuring an exposed drain paddle for direct thermal conduction to the PCB. Unlike standard SO-8, Power HSOP8 reduces R_th(ch–C) from >60 °C/W to 4.46 °C/W and increases power dissipation capability from ~2.5 W to 28 W at T_C = 25°C, making it suitable for high-current UPA2701GR-E1-AT deployments in space-limited applications.

UPA2701GR-E1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.173", 4.40mm Width)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PSOP

UPA2701GR-E1-AT FAQ

1.How can I place an order for UPA2701GR-E1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2701GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2701GR-E1-AT reliable?

The price and inventory of UPA2701GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2701GR-E1-AT is usually 5 days.

3.What payment methods are accepted for UPA2701GR-E1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2701GR-E1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2701GR-E1-AT?

UPA2701GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2701GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2701GR-E1-AT?

For technical support, including UPA2701GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2701GR-E1-AT requirements.

6.How does Aetrix verify that UPA2701GR-E1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2701GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2701GR-E1-AT meets industry standards.

7.What is the process for return or replacement of UPA2701GR-E1-AT?

All UPA2701GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2701GR-E1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2701GR-E1-AT part is unused and in its original packaging.

Return procedure for UPA2701GR-E1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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