Renesas UPA2701TP-E2-AZ

Overview

UPA2701TP-E2-AZ from Renesas Electronics is an N-channel power MOSFET in Power HSOP8 package, designed for high-efficiency DC/DC converters and notebook computer power management. It delivers R_DS(on) = 7.5 mΩ max at V_GS = 10 V / I_D = 7.0 A, supports ±80 A pulsed drain current, and features integrated source-drain body diode with t_rr = 32 ns.

For engineers reviewing the UPA2701TP-E2-AZ datasheet, UPA2701TP-E2-AZ pinout, UPA2701TP-E2-AZ application, or UPA2701TP-E2-AZ equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, avalanche energy rating (E_AS = 32.4 mJ), thermal resistance (R_th(ch–C) = 4.46 °C/W), and Power HSOP8 surface-mount compatibility with heat spreader.

Technical Context

This device operates as a synchronous rectifier or high-side/low-side switch in buck converter topologies. Its low C_iss (1200 pF typ.) and fast switching (t_d(on) = 10 ns, t_f = 11 ns) reduce gate drive loss and improve efficiency at high frequencies up to 1 MHz. The integrated ESD protection diode between gate and source requires external overvoltage clamping in systems with transient risk.

The MOSFET exhibits positive temperature coefficient for R_DS(on), enabling inherent current sharing in parallel configurations. Channel temperature derating follows a linear 0.2 W/°C reduction above 25°C case temperature, with maximum T_ch = 150°C and safe operating area limited by R_DS(on) conduction and pulse-width-dependent power dissipation.

Key Specifications

Pinout & Package

Package: Power HSOP8 (Heat Spreader SOP-8), 6.0 mm × 4.4 mm × 1.44 mm, exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with Si2300DS-T1-E3 and IRLML6344TRPBF, UPA2701TP-E2-AZ provides superior avalanche ruggedness, lower on-resistance at logic-level drive, and optimized thermal performance in thermally constrained spaces - making it the preferred choice for high-reliability notebook and embedded DC/DC applications.

Availability

UPA2701TP-E2-AZ is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, notebook computer power management, and industrial hot-swap load switching requiring stable component supply and long-term lifecycle support.

Supply support for UPA2701TP-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The UPA2701TP-E2-AZ belongs to Renesas' legacy µPA series of power MOSFETs, engineered specifically for high-density, high-efficiency power conversion in portable computing and embedded systems.

FAQ

What is the maximum continuous drain current for UPA2701TP-E2-AZ at 25°C case temperature?

The UPA2701TP-E2-AZ supports ±35 A DC drain current when case temperature (T_C) is maintained at 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper thermal management via the exposed drain pad and is limited to 16 A at 25°C ambient (T_A) due to lower thermal resistance to ambient (R_th(ch–A) = 89.3 °C/W).

Does UPA2701TP-E2-AZ require external gate protection, and why?

Yes, UPA2701TP-E2-AZ requires external gate protection despite its internal gate-source ESD diode. The datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." This is because the internal diode only protects against human-body-model ESD events, not system-level transients like inductive kickback or hot-swap surges - which can exceed ±20 V gate rating.

Can UPA2701TP-E2-AZ be used in synchronous rectification mode, and what design considerations apply?

Yes, UPA2701TP-E2-AZ is suitable for synchronous rectification due to its low R_DS(on) and fast body diode (t_rr = 32 ns). Designers must ensure precise gate timing to avoid shoot-through, account for V_F(S–D) = 0.8–1.2 V in dead-time calculations, and verify that the controller supports gate drive down to 4.5 V to leverage its 11.6 mΩ R_DS(on)2 specification.

What is the thermal resistance from channel to case (R_th(ch–C)) for UPA2701TP-E2-AZ, and how does it impact layout?

The UPA2701TP-E2-AZ has R_th(ch–C) = 4.46 °C/W, measured with TC = 25°C. This low value relies on soldering the exposed drain pad (pins 5–9) to a ≥100 mm² copper pour with ≥4 thermal vias to inner ground planes. Inadequate pad connection raises effective R_th by >2×, risking thermal runaway at >15 A continuous current.

Is UPA2701TP-E2-AZ compliant with RoHS and lead-free assembly requirements?

Yes, UPA2701TP-E2-AZ is RoHS-compliant and qualified for lead-free reflow soldering. The "-E2-AZ" suffix denotes lead-free plating and RoHS compliance per EU Directive 2011/65/EU. Its Power HSOP8 package uses matte tin termination and withstands JEDEC J-STD-020D peak reflow temperatures up to 260°C for 30 seconds.